KR950008433A - Si-O 함유 피복물을 형성시키는 방법 - Google Patents

Si-O 함유 피복물을 형성시키는 방법 Download PDF

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KR950008433A
KR950008433A KR1019940023546A KR19940023546A KR950008433A KR 950008433 A KR950008433 A KR 950008433A KR 1019940023546 A KR1019940023546 A KR 1019940023546A KR 19940023546 A KR19940023546 A KR 19940023546A KR 950008433 A KR950008433 A KR 950008433A
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coating
hydrogen silsesquioxane
containing ceramic
silsesquioxane resin
hydrogen
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스티븐 밸런스 데이비드
찰스 카밀렛티 로버트
케이 던 다이아나
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노먼 에드워드 루이스
다우 코닝 코포레이션
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
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    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02134—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material comprising hydrogen silsesquioxane, e.g. HSQ
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane

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  • Formation Of Insulating Films (AREA)
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Abstract

본 발명은 전자 기판위에 개선된 Si-O 함유 피복물을 형성시키는 방법에 관한 것이다. 당해 방법은 수소 실세스퀴옥산 수지로부터 유도된 Si-O 함유 세라믹 피복물을 수소 기체로 처리하는 단계를 포함한다. 생성된 피복물은 안정한 유전상수와 같은 개선된 특성을 갖는다.

Description

Si-O 함유 피복물을 형성시키는 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (10)

  1. 수소 실세스퀴옥산 수지를 포함하는 피복물을 전자 기판위에 적용하는 단계, 피복된 전자 기판을, 수소 실세스퀴옥산 수지가 Si-O 함유 세라믹 피복물로 전환되기에 충분한 온도로 가열하는 단계 및 Si-O 함유 세라믹 피복물을, 이를 어닐링하기에 충분한 시간 및 온도하에 수소 기체를 함유하는 어닐링 대기에 노출시키는 단계를 포함하는, Si-O 함유 피복물을 전자 기판 위에 형성시키는 방법.
  2. 제1항에 있어서, 피복된 기판을 50℃ 내지 1000℃의 온도 범위에서 6시간 미만의 시간 동안 가열함으로써 이를 Si-O 함유 세라믹 피복물을 전환시키는 방법.
  3. 제1항에 있어서, 수소 실세스퀴옥산 수지가 중합체성종으로 분별되어, 이들의 75%이상의 분자량이 1200 내지 100,000으로 되도록 하는 방법.
  4. 제1항에 있어서, 수소 실세스퀴옥산 수지 함유 피복물이 티타늄, 지르코늄, 알루미늄, 탄탈륨, 바나듐, 니오븀, 붕소 및 인 중에서 선택된 원소를 함유하는 화합물(당해 화합물은 알콕시 및 아실옥시 중에서 선택되는 가수분해 가능한 하나 이상의 치환체를 함유하며, 또한 실리카 피복물이 변형성 세라믹 옥사이드를 0.1내지 30중량%를 함유하도록 하는 양으로 존재한다)을 포함하는 변형성 세라믹 옥사이드 전구체를 함유하는 방법.
  5. 제1항에 있어서, 수소 실세스퀴옥산 수지 함유 피복물이 수소 실세스퀴옥산 수지의 중량을 기준으로 하여, 백금, 로듐 또는 구리 함량이 5 내지 500ppm인 백금, 로듐 또는 구리 촉매를 함유하는 방법.
  6. 제1항에 있어서, 피복된 기판을 공기, O2, 산소 플라즈마, 오존, 불활성 기체, 암모니아, 아민, 습기 및 N2O중에서 선택된 대기하에서 가열함으로써 이를 Si-O 함유 세라믹 피복물로 전환시키는 방법.
  7. 제1항에 있어서, 어닐링 대기가 수소 기체를 1 내지 30용량%의 농도 범위로 함유하는 방법.
  8. 수소 실세스퀴옥산 수지로부터 유도된 Si-O 함유 세라믹 피복물을, 이의 유전상수를 안정시키기에 충분한 시간 및 온도하에서 수소 기체 함유 대기에 노출시킴을 포함하여, 수소 실세스퀴옥산 수지로부터 유도된 Si-O 함유 세라믹 피복물의 유전상수를 안정화시키는 방법.
  9. 제8항의 방법에 의해 제조된, 1MHZ에서 유전상수가 3.2 미만인 Si-O 함유 세라믹 물질.
  10. 제9항의 전자 기판을 함유하는 전자 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940023546A 1993-09-22 1994-09-16 Si-o함유 피막을 형성시키는 방법 KR100300801B1 (ko)

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US08/124529 1993-09-22
US08/124,529 US5441765A (en) 1993-09-22 1993-09-22 Method of forming Si-O containing coatings

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KR950008433A true KR950008433A (ko) 1995-04-17
KR100300801B1 KR100300801B1 (ko) 2001-10-22

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US (2) US5441765A (ko)
EP (1) EP0647965B1 (ko)
JP (2) JP3701700B2 (ko)
KR (1) KR100300801B1 (ko)
CA (1) CA2117593A1 (ko)
DE (1) DE69416767T2 (ko)
TW (1) TW297786B (ko)

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US5523163A (en) 1996-06-04
US5441765A (en) 1995-08-15
EP0647965B1 (en) 1999-03-03
DE69416767T2 (de) 1999-11-11
JPH07187640A (ja) 1995-07-25
KR100300801B1 (ko) 2001-10-22
JP3701700B2 (ja) 2005-10-05
TW297786B (ko) 1997-02-11
DE69416767D1 (de) 1999-04-08
CA2117593A1 (en) 1995-03-23
EP0647965A1 (en) 1995-04-12
JP2005320239A (ja) 2005-11-17

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