DE69416881T2 - Beschichtung von elektronischen Substraten mit Silika aus Polysilazanen - Google Patents
Beschichtung von elektronischen Substraten mit Silika aus PolysilazanenInfo
- Publication number
- DE69416881T2 DE69416881T2 DE69416881T DE69416881T DE69416881T2 DE 69416881 T2 DE69416881 T2 DE 69416881T2 DE 69416881 T DE69416881 T DE 69416881T DE 69416881 T DE69416881 T DE 69416881T DE 69416881 T2 DE69416881 T2 DE 69416881T2
- Authority
- DE
- Germany
- Prior art keywords
- polysilazanes
- silica
- coating
- electronic substrates
- substrates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title 2
- 239000011248 coating agent Substances 0.000 title 1
- 238000000576 coating method Methods 0.000 title 1
- 229920001709 polysilazane Polymers 0.000 title 1
- 239000000377 silicon dioxide Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
- B05D7/24—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials for applying particular liquids or other fluent materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/02—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
- B05D3/0254—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/16—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
- H01L21/02222—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
- H01L21/02323—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen
- H01L21/02326—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen into a nitride layer, e.g. changing SiN to SiON
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31058—After-treatment of organic layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D2203/00—Other substrates
- B05D2203/30—Other inorganic substrates, e.g. ceramics, silicon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D2518/00—Other type of polymers
- B05D2518/10—Silicon-containing polymers
- B05D2518/12—Ceramic precursors (polysiloxanes, polysilazanes)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Silicon Polymers (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Silicon Compounds (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Paints Or Removers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US1387393A | 1993-02-05 | 1993-02-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69416881D1 DE69416881D1 (de) | 1999-04-15 |
DE69416881T2 true DE69416881T2 (de) | 1999-11-04 |
Family
ID=21762247
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69416881T Expired - Fee Related DE69416881T2 (de) | 1993-02-05 | 1994-01-26 | Beschichtung von elektronischen Substraten mit Silika aus Polysilazanen |
Country Status (6)
Country | Link |
---|---|
US (1) | US5358739A (de) |
EP (1) | EP0611067B1 (de) |
JP (1) | JPH072511A (de) |
KR (1) | KR100313382B1 (de) |
DE (1) | DE69416881T2 (de) |
TW (1) | TW270902B (de) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2790163B2 (ja) * | 1993-07-29 | 1998-08-27 | 富士通株式会社 | シリコン酸化膜の形成方法、半導体装置の製造方法及びフラットディスプレイ装置の製造方法 |
US5837318A (en) * | 1995-04-26 | 1998-11-17 | Mcdonnell Douglas Corporation | Process for production of low dielectric ceramic composites |
DE69622928T2 (de) * | 1995-05-29 | 2002-12-12 | Fuji Photo Film Co Ltd | Verfahren zur Herstellung von Schutzschichten aus Siliziumdioxid |
TW353108B (en) * | 1995-06-16 | 1999-02-21 | Dow Corning | Composite electronic coatings |
US5635240A (en) * | 1995-06-19 | 1997-06-03 | Dow Corning Corporation | Electronic coating materials using mixed polymers |
US5661092A (en) * | 1995-09-01 | 1997-08-26 | The University Of Connecticut | Ultra thin silicon oxide and metal oxide films and a method for the preparation thereof |
JP2825077B2 (ja) * | 1996-01-26 | 1998-11-18 | 日本電気株式会社 | 半導体装置の製造方法および製造装置 |
DE69728999T2 (de) * | 1996-11-11 | 2005-04-28 | Catalysts & Chemicals Industries Co. Ltd., Kawasaki | Substratglättungsverfahren |
US5924005A (en) * | 1997-02-18 | 1999-07-13 | Motorola, Inc. | Process for forming a semiconductor device |
EP0862202A1 (de) * | 1997-02-27 | 1998-09-02 | Nec Corporation | Herstellungsverfahren für eine Halbleitervorrichtung mit einer planarisierenden SOG-Schicht und Gerät für dieses Verfahren |
US5932283A (en) * | 1998-05-01 | 1999-08-03 | Nec Corporation | Method for fabricating SiO2 film |
JP2000012536A (ja) | 1998-06-24 | 2000-01-14 | Tokyo Ohka Kogyo Co Ltd | シリカ被膜形成方法 |
US5935638A (en) * | 1998-08-06 | 1999-08-10 | Dow Corning Corporation | Silicon dioxide containing coating |
US6767775B1 (en) * | 1999-03-30 | 2004-07-27 | Seiko Epson Corporation | Method of manufacturing thin-film transistor |
KR100362834B1 (ko) | 2000-05-02 | 2002-11-29 | 삼성전자 주식회사 | 반도체 장치의 산화막 형성 방법 및 이에 의하여 제조된 반도체 장치 |
US6521544B1 (en) | 2000-08-31 | 2003-02-18 | Micron Technology, Inc. | Method of forming an ultra thin dielectric film |
US6410968B1 (en) * | 2000-08-31 | 2002-06-25 | Micron Technology, Inc. | Semiconductor device with barrier layer |
US6576964B1 (en) * | 2000-08-31 | 2003-06-10 | Micron Technology, Inc. | Dielectric layer for a semiconductor device having less current leakage and increased capacitance |
US6479405B2 (en) | 2000-10-12 | 2002-11-12 | Samsung Electronics Co., Ltd. | Method of forming silicon oxide layer in semiconductor manufacturing process using spin-on glass composition and isolation method using the same method |
US6376431B1 (en) | 2001-03-15 | 2002-04-23 | Honeywell International Inc. | Reduced wear carbon brake material |
US20040070704A1 (en) * | 2001-10-02 | 2004-04-15 | Lazarev Pavel I. | Multilayer plate for the fabrication of a display panel |
US7317499B2 (en) * | 2002-08-22 | 2008-01-08 | Nitto Denko Corporation | Multilayer plate and display panel with anisotropic crystal film and conducting protective layer |
JP2005116546A (ja) * | 2003-10-02 | 2005-04-28 | Toshiba Corp | 半導体装置およびその製造方法 |
JP4501519B2 (ja) * | 2004-04-23 | 2010-07-14 | 凸版印刷株式会社 | Pdp用金属隔壁の製造方法 |
US7439111B2 (en) * | 2004-09-29 | 2008-10-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
DE102006008308A1 (de) * | 2006-02-23 | 2007-08-30 | Clariant International Limited | Polysilazane enthaltende Beschichtungen zur Vermeidung von Zunderbildung und Korrosion |
JP5100077B2 (ja) * | 2006-10-04 | 2012-12-19 | 敏夫 寺中 | シリカ膜の製造方法 |
JP5160189B2 (ja) * | 2007-10-26 | 2013-03-13 | AzエレクトロニックマテリアルズIp株式会社 | 緻密なシリカ質膜を得ることができるポリシラザン化合物含有組成物 |
JP5069582B2 (ja) * | 2008-02-05 | 2012-11-07 | 有限会社コンタミネーション・コントロール・サービス | シリカ膜の形成方法 |
JP5329825B2 (ja) | 2008-02-25 | 2013-10-30 | 株式会社東芝 | 半導体装置の製造方法 |
JP5159680B2 (ja) * | 2009-03-24 | 2013-03-06 | 株式会社東芝 | 塗布型膜の形成方法 |
WO2011158925A1 (ja) * | 2010-06-18 | 2011-12-22 | Jnc株式会社 | 流体分離用複合多孔質膜、その製造方法及びフィルター |
GB201506244D0 (en) * | 2015-04-13 | 2015-05-27 | Pilkington Group Ltd | Coated glazing |
US10654070B2 (en) * | 2016-03-31 | 2020-05-19 | Lg Chem, Ltd. | Method for preparing a barrier film |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0218117A3 (de) * | 1985-10-11 | 1989-11-23 | Allied Corporation | Polycyclosilazanpolymere und ihre Verwendung als dielektrische Filme in integrierten Schaltkreisen |
US4719125A (en) * | 1985-10-11 | 1988-01-12 | Allied Corporation | Cyclosilazane polymers as dielectric films in integrated circuit fabrication technology |
US4746480A (en) * | 1986-08-11 | 1988-05-24 | Hoechst Celanese Corporation | Process for providing a protective oxide coating on ceramic fibers |
US4756977A (en) * | 1986-12-03 | 1988-07-12 | Dow Corning Corporation | Multilayer ceramics from hydrogen silsesquioxane |
US4826733A (en) * | 1986-12-03 | 1989-05-02 | Dow Corning Corporation | Sin-containing coatings for electronic devices |
US4749631B1 (en) * | 1986-12-04 | 1993-03-23 | Multilayer ceramics from silicate esters | |
US5176941A (en) * | 1987-11-07 | 1993-01-05 | Hoechst Aktiengesellschaft | Process of producing a ceramic/fiber composite using a molten polysilazone |
JPH01221466A (ja) * | 1988-03-01 | 1989-09-04 | Toa Nenryo Kogyo Kk | コーティング用組成物及びコーティング方法 |
US5152819A (en) * | 1990-08-16 | 1992-10-06 | Corning Incorporated | Method of making fused silica |
US5086126A (en) * | 1990-12-24 | 1992-02-04 | Dow Corning Corporation | Method for producing functional silazane polymers |
JP2765765B2 (ja) * | 1991-03-14 | 1998-06-18 | 東京応化工業株式会社 | 位相シフタ材料の製造方法 |
JPH04320055A (ja) * | 1991-04-18 | 1992-11-10 | Denki Kagaku Kogyo Kk | リードフレームおよび半導体パッケージ |
JP2661815B2 (ja) * | 1991-06-10 | 1997-10-08 | 東京応化工業株式会社 | 平坦化膜 |
JP3015104B2 (ja) * | 1991-07-16 | 2000-03-06 | 触媒化成工業株式会社 | 半導体装置およびその製造方法 |
-
1994
- 1994-01-26 DE DE69416881T patent/DE69416881T2/de not_active Expired - Fee Related
- 1994-01-26 EP EP94300585A patent/EP0611067B1/de not_active Expired - Lifetime
- 1994-02-04 JP JP6012493A patent/JPH072511A/ja active Pending
- 1994-02-04 KR KR1019940002069A patent/KR100313382B1/ko not_active IP Right Cessation
- 1994-02-05 TW TW083100976A patent/TW270902B/zh active
- 1994-03-10 US US08/209,321 patent/US5358739A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR940019814A (ko) | 1994-09-15 |
EP0611067B1 (de) | 1999-03-10 |
EP0611067A3 (de) | 1995-01-25 |
EP0611067A2 (de) | 1994-08-17 |
TW270902B (de) | 1996-02-21 |
KR100313382B1 (ko) | 2001-12-28 |
DE69416881D1 (de) | 1999-04-15 |
JPH072511A (ja) | 1995-01-06 |
US5358739A (en) | 1994-10-25 |
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