DE69623000D1 - Elektrolumineszentes bauelement aus porösem silizium - Google Patents

Elektrolumineszentes bauelement aus porösem silizium

Info

Publication number
DE69623000D1
DE69623000D1 DE69623000T DE69623000T DE69623000D1 DE 69623000 D1 DE69623000 D1 DE 69623000D1 DE 69623000 T DE69623000 T DE 69623000T DE 69623000 T DE69623000 T DE 69623000T DE 69623000 D1 DE69623000 D1 DE 69623000D1
Authority
DE
Germany
Prior art keywords
porous silicon
component made
electroluminescent component
electroluminescent
porous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69623000T
Other languages
English (en)
Other versions
DE69623000T2 (de
Inventor
Trevor Canham
Ingram Cox
Armando Loni
John Simons
Simon Blacker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qinetiq Ltd
Original Assignee
Qinetiq Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qinetiq Ltd filed Critical Qinetiq Ltd
Application granted granted Critical
Publication of DE69623000D1 publication Critical patent/DE69623000D1/de
Publication of DE69623000T2 publication Critical patent/DE69623000T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
    • H01L33/346—Materials of the light emitting region containing only elements of Group IV of the Periodic Table containing porous silicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroluminescent Light Sources (AREA)
  • Led Devices (AREA)
DE69623000T 1995-03-20 1996-03-15 Elektrolumineszentes Bauelement, das poröses Silicium enthält Expired - Lifetime DE69623000T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB9505569A GB2299204A (en) 1995-03-20 1995-03-20 Electroluminescent device
PCT/GB1996/000589 WO1996029746A1 (en) 1995-03-20 1996-03-15 Electroluminescent device comprising porous silicon

Publications (2)

Publication Number Publication Date
DE69623000D1 true DE69623000D1 (de) 2002-09-19
DE69623000T2 DE69623000T2 (de) 2003-04-30

Family

ID=10771489

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69623000T Expired - Lifetime DE69623000T2 (de) 1995-03-20 1996-03-15 Elektrolumineszentes Bauelement, das poröses Silicium enthält

Country Status (9)

Country Link
US (4) US6380550B1 (de)
EP (2) EP0815597B1 (de)
JP (1) JP3828933B2 (de)
KR (1) KR19980703224A (de)
CN (1) CN1185234A (de)
CA (1) CA2215708A1 (de)
DE (1) DE69623000T2 (de)
GB (1) GB2299204A (de)
WO (1) WO1996029746A1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19955618A1 (de) * 1999-11-19 2001-05-23 Heidenhain Gmbh Dr Johannes Maßverkörperung und Positionsmeßeinrichtung mit einer derartigen Maßverkörperung
JP2002180294A (ja) * 2000-12-08 2002-06-26 Tokyo Electron Ltd 液処理装置、液処理方法
US7838949B2 (en) * 2001-03-29 2010-11-23 Georgia Tech Research Corporation Porous gas sensors and method of preparation thereof
US7632548B2 (en) * 2002-08-02 2009-12-15 Applied Nanotech Holdings, Inc. Remote identification of explosives and other harmful materials
US7244513B2 (en) * 2003-02-21 2007-07-17 Nano-Proprietary, Inc. Stain-etched silicon powder
US7674628B2 (en) * 2003-08-01 2010-03-09 Applied Nanotech Holdings, Inc. Remote identification of explosives and other harmful materials
US7790574B2 (en) * 2004-12-20 2010-09-07 Georgia Tech Research Corporation Boron diffusion in silicon devices
US7674521B2 (en) * 2005-07-27 2010-03-09 International Business Machines Corporation Materials containing voids with void size controlled on the nanometer scale
US8174025B2 (en) * 2006-06-09 2012-05-08 Philips Lumileds Lighting Company, Llc Semiconductor light emitting device including porous layer
EP2082425A4 (de) * 2006-10-05 2011-07-13 Hitachi Chemical Co Ltd Gut ausgerichtete dichte siliziumnanodrähte mit hohem seitenverhältnis und herstellungsverfahren dafür
KR100839376B1 (ko) * 2007-01-08 2008-06-19 연세대학교 산학협력단 다공성 실리콘 및 이의 제조방법
DE102007012061A1 (de) * 2007-03-13 2008-09-18 Robert Bosch Gmbh Verfahren und Vorrichtung zum Erzeugen einer porösen Schicht auf einem Halbleiterträger
WO2010022321A1 (en) * 2008-08-21 2010-02-25 Georgia Tech Research Corporation Gas sensors, methods of preparation thereof, methods of selecting gas sensor materials, and methods of use of gas sensors
JP5363789B2 (ja) * 2008-11-18 2013-12-11 スタンレー電気株式会社 光半導体装置
CN102460767A (zh) * 2009-05-14 2012-05-16 思研（Sri）国际顾问与咨询公司 有机发光装置的改进的输出效率
US8748908B2 (en) 2012-05-07 2014-06-10 Sufian Abedrabbo Semiconductor optical emission device
CN106847958B (zh) * 2016-12-07 2018-09-11 同方威视技术股份有限公司 光电二极管器件及光电二极管探测器

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8927709D0 (en) * 1989-12-07 1990-02-07 Secretary Of The State For Def Silicon quantum wires
GB9108176D0 (en) * 1991-04-17 1991-06-05 Secr Defence Electroluminescent silicon device
DE4126955C2 (de) * 1991-08-14 1994-05-05 Fraunhofer Ges Forschung Verfahren zum Herstellen von elektrolumineszenten Siliziumstrukturen
US5206523A (en) * 1991-08-29 1993-04-27 Goesele Ulrich M Microporous crystalline silicon of increased band-gap for semiconductor applications
JPH05275743A (ja) * 1992-03-27 1993-10-22 Nippon Steel Corp 多孔質シリコンの発光効率を増加させる方法
EP0563625A3 (en) * 1992-04-03 1994-05-25 Ibm Immersion scanning system for fabricating porous silicon films and devices
US5458732A (en) * 1992-04-14 1995-10-17 Texas Instruments Incorporated Method and system for identifying process conditions
JPH06338631A (ja) * 1993-03-29 1994-12-06 Canon Inc 発光素子及びその製造方法
JPH08148280A (ja) * 1994-04-14 1996-06-07 Toshiba Corp 半導体装置およびその製造方法

Also Published As

Publication number Publication date
JPH11502372A (ja) 1999-02-23
US20070004064A1 (en) 2007-01-04
DE69623000T2 (de) 2003-04-30
US20050087760A1 (en) 2005-04-28
EP1233460A2 (de) 2002-08-21
CA2215708A1 (en) 1996-09-26
GB2299204A (en) 1996-09-25
EP1233460A3 (de) 2009-11-11
WO1996029746A1 (en) 1996-09-26
KR19980703224A (ko) 1998-10-15
EP0815597B1 (de) 2002-08-14
US20020096688A1 (en) 2002-07-25
GB9505569D0 (en) 1995-05-03
CN1185234A (zh) 1998-06-17
EP0815597A1 (de) 1998-01-07
US6380550B1 (en) 2002-04-30
JP3828933B2 (ja) 2006-10-04

Similar Documents

Publication Publication Date Title
DE69624413D1 (de) Verbesserungen bei der Herstellung von Halbleitervorrichtungen
DE69625265D1 (de) Halbleiterstrukturen
NO995852D0 (no) Ny form av S-omeprazol
DE69824647D1 (de) Silicium mit niedriger Fehlerdichte
FI963681A (fi) Optoelektronisten komponenttien kapselointi
DE69623000D1 (de) Elektrolumineszentes bauelement aus porösem silizium
DE69533127D1 (de) Kühlkörper
DE69635236D1 (de) Verbesserungen an Halbleiteranordnungen
DE69626371D1 (de) Halbleiterschaltung
DE59609022D1 (de) Verbindungssubstrat
FI963680A (fi) Optoelektronisten komponenttien läpäisemätön kapselointi
DE69708353D1 (de) Sinterkörper aus Siliziumnitrid
DE69433141D1 (de) Zusammensetzungen aus kohleteerschlamm
DE69621576D1 (de) Integrierte Halbleiterschaltung
DE69628919D1 (de) Halbleiterfunktionsschaltung
NO954922D0 (no) AHUK - Isolerende laget
DE59605696D1 (de) Keramisches Bauteil
DE69622394D1 (de) Halbleiterfunktionsschaltung
DK1230863T3 (da) Poröst element
FI952676A (fi) Kerrosrakenne
KR970025846U (ko) 웨이퍼 운반구
KR970015141U (ko) 세라믹 콘덴서의 제조장치
KR960035641U (ko) 반도체 소자의 구조
KR960026275U (ko) 고집적화용 세라믹기판
DE69637197D1 (de) Schaltungssubstrat aus siliziumnitrid

Legal Events

Date Code Title Description
8364 No opposition during term of opposition