DE69635236D1 - Verbesserungen an Halbleiteranordnungen - Google Patents

Verbesserungen an Halbleiteranordnungen

Info

Publication number
DE69635236D1
DE69635236D1 DE69635236T DE69635236T DE69635236D1 DE 69635236 D1 DE69635236 D1 DE 69635236D1 DE 69635236 T DE69635236 T DE 69635236T DE 69635236 T DE69635236 T DE 69635236T DE 69635236 D1 DE69635236 D1 DE 69635236D1
Authority
DE
Germany
Prior art keywords
semiconductor devices
semiconductor
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69635236T
Other languages
English (en)
Other versions
DE69635236T2 (de
Inventor
Chih-Chen Cho
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of DE69635236D1 publication Critical patent/DE69635236D1/de
Application granted granted Critical
Publication of DE69635236T2 publication Critical patent/DE69635236T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02134—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material comprising hydrogen silsesquioxane, e.g. HSQ
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H01L21/3121—Layers comprising organo-silicon compounds
    • H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
    • H01L21/3124—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds layers comprising hydrogen silsesquioxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Paints Or Removers (AREA)
DE69635236T 1995-02-17 1996-02-16 Verbesserungen an Halbleiteranordnungen Expired - Lifetime DE69635236T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US390181 1995-02-17
US08/390,181 US5656555A (en) 1995-02-17 1995-02-17 Modified hydrogen silsesquioxane spin-on glass

Publications (2)

Publication Number Publication Date
DE69635236D1 true DE69635236D1 (de) 2006-02-16
DE69635236T2 DE69635236T2 (de) 2006-07-13

Family

ID=23541429

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69635236T Expired - Lifetime DE69635236T2 (de) 1995-02-17 1996-02-16 Verbesserungen an Halbleiteranordnungen

Country Status (4)

Country Link
US (2) US5656555A (de)
EP (1) EP0727817B1 (de)
JP (1) JPH08250490A (de)
DE (1) DE69635236T2 (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09143420A (ja) * 1995-09-21 1997-06-03 Asahi Glass Co Ltd 低誘電率樹脂組成物
EP0810648A3 (de) * 1996-05-31 1997-12-29 Texas Instruments Incorporated Verbesserungen in oder in Bezug auf Halbleiteranordnungen
US5981354A (en) * 1997-03-12 1999-11-09 Advanced Micro Devices, Inc. Semiconductor fabrication employing a flowable oxide to enhance planarization in a shallow trench isolation process
US6015457A (en) * 1997-04-21 2000-01-18 Alliedsignal Inc. Stable inorganic polymers
US6492282B1 (en) * 1997-04-30 2002-12-10 Siemens Aktiengesellschaft Integrated circuits and manufacturing methods
JPH1116904A (ja) * 1997-06-26 1999-01-22 Mitsubishi Electric Corp 半導体装置及びその製造方法
US5888911A (en) * 1997-10-23 1999-03-30 Advanced Micro Devices, Inc. HSQ processing for reduced dielectric constant
US6297125B1 (en) * 1998-01-23 2001-10-02 Texas Instruments Incorporated Air-bridge integration scheme for reducing interconnect delay
US6177199B1 (en) 1999-01-07 2001-01-23 Alliedsignal Inc. Dielectric films from organohydridosiloxane resins with low organic content
JP3175691B2 (ja) 1998-05-08 2001-06-11 日本電気株式会社 多層配線半導体装置の製造方法
TW441006B (en) * 1998-05-18 2001-06-16 United Microelectronics Corp Method of forming inter-metal dielectric layer
US7923383B2 (en) * 1998-05-21 2011-04-12 Tokyo Electron Limited Method and apparatus for treating a semi-conductor substrate
US6420278B1 (en) * 1998-06-12 2002-07-16 Advanced Micro Devices, Inc. Method for improving the dielectric constant of silicon-based semiconductor materials
US6140221A (en) * 1998-07-29 2000-10-31 Philips Electronics North America Corp. Method for forming vias through porous dielectric material and devices formed thereby
US6407007B1 (en) * 1998-11-17 2002-06-18 Taiwan Semiconductor Manufacturing Company Method to solve the delamination of a silicon nitride layer from an underlying spin on glass layer
WO2000041231A1 (en) * 1999-01-07 2000-07-13 Alliedsignal, Inc. Dielectric films from organohydridosiloxane resins
US6436850B1 (en) 1999-09-01 2002-08-20 Guarionex Morales Method of degassing low k dielectric for metal deposition
US20050158666A1 (en) * 1999-10-15 2005-07-21 Taiwan Semiconductor Manufacturing Company, Ltd. Lateral etch inhibited multiple etch method for etching material etchable with oxygen containing plasma
DE60204502T2 (de) * 2001-03-27 2006-05-18 Samsung Electronics Co., Ltd., Suwon Polysiloxanharz und Verfahren zur Herstellung einer Zwischenschicht daraus für Wafer
US6667249B1 (en) 2002-03-20 2003-12-23 Taiwan Semiconductor Manufacturing Company Minimizing coating defects in low dielectric constant films
US6737117B2 (en) 2002-04-05 2004-05-18 Dow Corning Corporation Hydrosilsesquioxane resin compositions having improved thin film properties
EP1495066B1 (de) * 2002-04-18 2008-07-16 LG Chem, Ltd. Organisches silicatpolymer und dieses umfassender isolierfilm
US20040132280A1 (en) * 2002-07-26 2004-07-08 Dongbu Electronics Co. Ltd. Method of forming metal wiring in a semiconductor device
US7205248B2 (en) * 2003-02-04 2007-04-17 Micron Technology, Inc. Method of eliminating residual carbon from flowable oxide fill
KR20080017368A (ko) * 2005-06-15 2008-02-26 다우 코닝 코포레이션 수소 실세스퀴옥산의 경화 방법 및 나노미터 크기의트렌치에서의 치밀화 방법
CA2628473C (en) * 2005-11-30 2014-07-22 Lg Chem, Ltd. Microcellular foam of thermoplastic resin prepared with die having improved cooling property and method for preparing the same
US8173077B2 (en) * 2005-12-16 2012-05-08 The Curators Of The University Of Missouri Reusable PCR amplification system and method
US7556972B2 (en) * 2007-01-25 2009-07-07 International Business Machines Corporation Detection and characterization of SiCOH-based dielectric materials during device fabrication
CN106794450B (zh) 2014-08-29 2020-12-25 日东电工株式会社 光催化涂层及其制备方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0751634B2 (ja) * 1986-10-20 1995-06-05 東芝シリコ−ン株式会社 表面処理された真球状ポリメチルシルセスキオキサン粉末
US4756977A (en) * 1986-12-03 1988-07-12 Dow Corning Corporation Multilayer ceramics from hydrogen silsesquioxane
US4847162A (en) * 1987-12-28 1989-07-11 Dow Corning Corporation Multilayer ceramics coatings from the ceramification of hydrogen silsequioxane resin in the presence of ammonia
CA2027031A1 (en) * 1989-10-18 1991-04-19 Loren A. Haluska Hermetic substrate coatings in an inert gas atmosphere
US4973526A (en) * 1990-02-15 1990-11-27 Dow Corning Corporation Method of forming ceramic coatings and resulting articles
JP2928341B2 (ja) * 1990-07-03 1999-08-03 三菱電機株式会社 シリコーンラダー系樹脂塗布液組成物
US5152834A (en) * 1990-09-14 1992-10-06 Ncr Corporation Spin-on glass composition
US5091162A (en) * 1990-10-01 1992-02-25 Dow Corning Corporation Perhydrosiloxane copolymers and their use as coating materials
US5380555A (en) * 1993-02-09 1995-01-10 Dow Corning Toray Silicone Co., Ltd. Methods for the formation of a silicon oxide film
US5387480A (en) * 1993-03-08 1995-02-07 Dow Corning Corporation High dielectric constant coatings
US5320868A (en) * 1993-09-13 1994-06-14 Dow Corning Corporation Method of forming SI-O containing coatings
US5441765A (en) * 1993-09-22 1995-08-15 Dow Corning Corporation Method of forming Si-O containing coatings
JP2751820B2 (ja) * 1994-02-28 1998-05-18 日本電気株式会社 半導体装置の製造方法
US5516867A (en) * 1995-05-12 1996-05-14 Dow Corning Corporation Modified hydrogen silsesquioxane resin

Also Published As

Publication number Publication date
EP0727817A2 (de) 1996-08-21
US5656555A (en) 1997-08-12
EP0727817B1 (de) 2005-10-05
DE69635236T2 (de) 2006-07-13
JPH08250490A (ja) 1996-09-27
EP0727817A3 (de) 1998-05-13
US5665849A (en) 1997-09-09

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