KR940005520A - 다공성 세라믹 전자기판의 밀봉방법 - Google Patents

다공성 세라믹 전자기판의 밀봉방법 Download PDF

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KR940005520A
KR940005520A KR1019930013532A KR930013532A KR940005520A KR 940005520 A KR940005520 A KR 940005520A KR 1019930013532 A KR1019930013532 A KR 1019930013532A KR 930013532 A KR930013532 A KR 930013532A KR 940005520 A KR940005520 A KR 940005520A
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silicon
ceramic
preceramic material
substrate
containing preceramic
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KR1019930013532A
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찬드라 그리쉬
앤드류 할루스카 로렌
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노만 에드워드 루이스
다우 코닝 코포레이션
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Publication of KR940005520A publication Critical patent/KR940005520A/ko

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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/5053—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials non-oxide ceramics
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/85—Coating or impregnation with inorganic materials
    • C04B41/87—Ceramics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
    • H01L21/4807—Ceramic parts
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/90—Electrical properties
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
    • C04B2235/6567—Treatment time
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/658—Atmosphere during thermal treatment
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Ceramic Products (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

본 발명은 다공성 세라믹 기판을 밀봉하는 신규한 방법에 관한 것이다.
당해 방법은 기판을 규소 함유 물질로 함침시킨 다음, 당해 물질을 세라믹으로 전환시킴을 포함한다. 생성된 기판은 수분 침투에 내성이 있으며, 손상 없이 쉽게 조작할 수 있다.

Description

다공성 세라믹 전자기판의 밀봉방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (10)

  1. 규소 함유 예비 세라믹 물질을 포함하는 조성물을 사용하여 다공성 세라믹 전자 기판을 함침시키고, 함침된 기판을, 규소 함휴 예비 세라믹 물질을 세라믹으로 전환하기에 충분한 온도로 가열함을 포함하는 다공성 세라믹 전자 기판의 밀봉 방법.
  2. 제1하에 있어서, 규소 함유 예비 세라믹 물질을 용매중에서 희석시키는 방법.
  3. 제1항에 있어서, 다공성 전자 기판이 알루미나, 질화알루미늄, 산화베릴륨, 질화규소, 질화붕소, 탄화붕소, 실리카, 다이아몬드형 탄소, 규소 및 탄화규소로부터 선택된 물질로부터 제조되는 방법.
  4. 제1항에 있어서, 규소 함유 예비 세라믹 물질이 규소, 질소, 탄소 및 수소로부터 선택되는 방법.
  5. 제4항에 있어서, 규소 함유 예비 세라믹 물질이 실리카 전구체, 질화규소 전구체 및 카보질화규소 전구체로 부터 선택되는 방법.
  6. 제5항에 있어서, 실리카 전구체가 하이드로젠 실세스퀴옥산 수지 또는 가수분해되거나 부분적으로 가수분해된 RnSi(OR)(4-n)(여기서, R은 탄소수 1 내지 20의 지방족, 지환족 또는 방향족 치환체이고, n은 0 내지 3이다)인 방법.
  7. 제1항에 있어서, 함침된 기판이 약 6시간 이하 동안 50 내지 800℃의 온도 범위에서 가열되는 방법.
  8. 제1항에 있어서, 함침된 기판이 공기, O2, 불화성 가스, 암모니아, 아민, 습기 및 N2O로부터 선택된 분위기중에서 가열되는 방법.
  9. 제1항에 있어서, 규소 함유 예비 세라믹 물질을 포함하는 조성물의 티타늄, 지르코늄, 알루미늄, 탄탈륨, 바나듐, 니오븀, 붕소 및 인으로 이루어진 그룹으로부터 선택된 하나의 원소를 함유하는 화합물을 포함하는 하나 이상의 변성 세라믹 산화물 전구체를 함유하고 상기 화합물이 알콕시 및 아실옥시로 부터 선택된 하나 이상의 가수분해성 치환체를 함유하며, 당해 화합물이, 세라믹 피복물이 변성 세라믹 산화물을 0.1 내지 30중량% 함유하도록 하는 양으로 존재하는 방법.
  10. 제1항에 있어서, 규소 함유 예비 세라믹 물질을 포함하는 조성물이 규소 함유 예비 세라믹 물질의 중량을 기준으로 하여 5 내지 500ppm의 양으로 백금, 로듐 또는 구리 촉매를 함유하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930013532A 1992-07-20 1993-07-19 다공성 세라믹 전자기판의 밀봉방법 KR940005520A (ko)

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US91521592A 1992-07-20 1992-07-20
US7/915,215 1992-07-20

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KR940005520A true KR940005520A (ko) 1994-03-21

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EP (1) EP0580381A1 (ko)
JP (1) JPH06188528A (ko)
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CA (1) CA2100277A1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100811877B1 (ko) * 2006-07-31 2008-03-11 울산대학교 산학협력단 방향족 환을 포함하는 유기물질 흡착용 실리카 겔

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Publication number Priority date Publication date Assignee Title
DE102009000883B4 (de) * 2009-02-16 2010-11-04 Semikron Elektronik Gmbh & Co. Kg Substrat zur Aufnahme mindestens eines Bauelements und Verfahren zur Herstellung eines Substrats

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4230773A (en) * 1978-12-04 1980-10-28 International Business Machines Corporation Decreasing the porosity and surface roughness of ceramic substrates
US4973526A (en) * 1990-02-15 1990-11-27 Dow Corning Corporation Method of forming ceramic coatings and resulting articles
US5262201A (en) * 1990-06-04 1993-11-16 Dow Corning Corporation Low temperature process for converting silica precursor coatings to ceramic silica coatings by exposure to ammonium hydroxide or an environment to which water vapor and ammonia vapor have been added
US5063267A (en) * 1990-11-28 1991-11-05 Dow Corning Corporation Hydrogen silsesquioxane resin fractions and their use as coating materials

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100811877B1 (ko) * 2006-07-31 2008-03-11 울산대학교 산학협력단 방향족 환을 포함하는 유기물질 흡착용 실리카 겔

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EP0580381A1 (en) 1994-01-26
CA2100277A1 (en) 1994-01-21
JPH06188528A (ja) 1994-07-08

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