KR960022871A - 복합 전자 피막 - Google Patents

복합 전자 피막 Download PDF

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Publication number
KR960022871A
KR960022871A KR1019950051789A KR19950051789A KR960022871A KR 960022871 A KR960022871 A KR 960022871A KR 1019950051789 A KR1019950051789 A KR 1019950051789A KR 19950051789 A KR19950051789 A KR 19950051789A KR 960022871 A KR960022871 A KR 960022871A
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South Korea
Prior art keywords
fibers
coating composition
electronic substrate
refractory
coating
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KR1019950051789A
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English (en)
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챨스 캐밀렛티 로버트
앤드류 할루스카 로렌
윈론 마이클 케이트
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노먼 에드워드 루이스
다우 코닝 코포레이션
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Application filed by 노먼 에드워드 루이스, 다우 코닝 코포레이션 filed Critical 노먼 에드워드 루이스
Publication of KR960022871A publication Critical patent/KR960022871A/ko

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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
    • B05D7/24—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials for applying particular liquids or other fluent materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/02—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
    • B05D3/0254—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/4505—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements characterised by the method of application
    • C04B41/455—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements characterised by the method of application the coating or impregnating process including a chemical conversion or reaction
    • C04B41/4554—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements characterised by the method of application the coating or impregnating process including a chemical conversion or reaction the coating or impregnating material being an organic or organo-metallic precursor of an inorganic material
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/5025—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with ceramic materials
    • C04B41/5027—Oxide ceramics in general; Specific oxide ceramics not covered by C04B41/5029 - C04B41/5051
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/85—Coating or impregnation with inorganic materials
    • C04B41/87—Ceramics
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02134—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material comprising hydrogen silsesquioxane, e.g. HSQ
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D2203/00—Other substrates
    • B05D2203/30—Other inorganic substrates, e.g. ceramics, silicon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D2518/00—Other type of polymers
    • B05D2518/10—Silicon-containing polymers
    • B05D2518/12—Ceramic precursors (polysiloxanes, polysilazanes)
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
    • C04B2111/00844—Uses not provided for elsewhere in C04B2111/00 for electronic applications
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Paints Or Removers (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Formation Of Insulating Films (AREA)
  • Silicon Compounds (AREA)

Abstract

본 발명은 전자 기판상에 복합 피막을 형성시키는 방법, 및 이로써 피막이 형성된 기판에 관한 것이다. 본 방법은 수소 실세스퀴옥산 수지 및 내화성 섬유를 포함하는 도료를 전자 기판상에 도포한 다음, 도포된 기판을 수소 실세스퀴옥산 수지가 세라믹으로 전환되기에 충분한 온도에서 가열함을 포함한다.

Description

복합 전자 피막
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (5)

  1. 수소 실세스퀴옥산 수지 및 내화성 섬유를 포함하며 섬유가 90용적% 미만의 양으로 존재하는 도료 조성물을 전자 기관에 도포한 다음, 50℃ 내지 1000℃의 온도범위에서 6시간 이내에 도료 조성물에 세라믹 피막으로 전환되도록 도포된 전자 기판을 충분한 온도에서 가열함을 포함하여, 전자 기판상에 복합 피막을 형성시키는 방법.
  2. 제1항에 있어서, 내화성 섬유가 탄소섬유, 탄화규소 섬유, 질화규소 섬유, 삼화알루미늄 섬유, 유기 섬유 및 아라미드 섬유중에서 선택되는 방법.
  3. 제1항에 있어서, 도료 조성물이 또한 내화성 섬유의 표면을 개질시키는 재료를 함유하는 방법.
  4. 제1항에 있어서, 도료 조성물이 또한 현탁제를 함유하는 방법.
  5. 제1항의 도포방법에 의해 수득될 수 있는 전자 기판.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950051789A 1994-12-19 1995-12-19 복합 전자 피막 KR960022871A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/358,292 US5516596A (en) 1994-12-19 1994-12-19 Method of forming a composite, article and composition
US08/358,292 1994-12-19

Publications (1)

Publication Number Publication Date
KR960022871A true KR960022871A (ko) 1996-07-18

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ID=23409087

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950051789A KR960022871A (ko) 1994-12-19 1995-12-19 복합 전자 피막

Country Status (4)

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US (1) US5516596A (ko)
EP (1) EP0718255A3 (ko)
JP (1) JPH08225382A (ko)
KR (1) KR960022871A (ko)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5814397A (en) * 1995-09-13 1998-09-29 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method for waterproofing ceramic materials
US5693701A (en) * 1995-10-26 1997-12-02 Dow Corning Corporation Tamper-proof electronic coatings
US5753374A (en) * 1995-11-27 1998-05-19 Dow Corning Corporation Protective electronic coating
US5789325A (en) * 1996-04-29 1998-08-04 Dow Corning Corporation Coating electronic substrates with silica derived from polycarbosilane
US5780163A (en) * 1996-06-05 1998-07-14 Dow Corning Corporation Multilayer coating for microelectronic devices
US5730792A (en) * 1996-10-04 1998-03-24 Dow Corning Corporation Opaque ceramic coatings
US5776235A (en) * 1996-10-04 1998-07-07 Dow Corning Corporation Thick opaque ceramic coatings
US6270642B1 (en) * 1999-09-30 2001-08-07 The Penn State Research Foundation Fabrication of zirconia electrolyte films by electrophoretic deposition
JP3604002B2 (ja) * 2000-06-02 2004-12-22 シャープ株式会社 半導体装置
CN106024918A (zh) * 2012-01-06 2016-10-12 日立化成株式会社 带钝化膜的半导体基板及其制造方法、以及太阳能电池元件及其制造方法
WO2013103140A1 (ja) * 2012-01-06 2013-07-11 日立化成株式会社 パッシベーション膜形成用組成物、パッシベーション膜付半導体基板及びその製造方法、並びに太陽電池素子及びその製造方法
JP6285095B2 (ja) * 2012-09-28 2018-02-28 日立化成株式会社 半導体基板パッシベーション膜形成用組成物、パッシベーション膜付半導体基板及びその製造方法、並びに太陽電池素子及びその製造方法
JP6107033B2 (ja) * 2012-09-28 2017-04-05 日立化成株式会社 半導体基板パッシベーション膜形成用組成物、パッシベーション膜付半導体基板及びその製造方法、並びに太陽電池素子及びその製造方法
WO2017142648A1 (en) 2016-02-19 2017-08-24 Dow Corning Corporation Aged polymeric silsesquioxanes
FR3060601B1 (fr) * 2016-12-20 2018-12-07 Commissariat A L'energie Atomique Et Aux Energies Alternatives Composition adhesive et son utilisation dans l'electronique
JP2017195377A (ja) * 2017-05-19 2017-10-26 日立化成株式会社 半導体基板パッシベーション膜形成用組成物、パッシベーション膜付半導体基板及びその製造方法、並びに太陽電池素子及びその製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4756977A (en) * 1986-12-03 1988-07-12 Dow Corning Corporation Multilayer ceramics from hydrogen silsesquioxane
US5387480A (en) * 1993-03-08 1995-02-07 Dow Corning Corporation High dielectric constant coatings

Also Published As

Publication number Publication date
EP0718255A2 (en) 1996-06-26
JPH08225382A (ja) 1996-09-03
EP0718255A3 (en) 1997-04-23
US5516596A (en) 1996-05-14

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