KR920014375A - 역방향 열분해 공정 - Google Patents

역방향 열분해 공정 Download PDF

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Publication number
KR920014375A
KR920014375A KR1019910024114A KR910024114A KR920014375A KR 920014375 A KR920014375 A KR 920014375A KR 1019910024114 A KR1019910024114 A KR 1019910024114A KR 910024114 A KR910024114 A KR 910024114A KR 920014375 A KR920014375 A KR 920014375A
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KR
South Korea
Prior art keywords
coating
temperature
sufficient
ceramicization
flow rate
Prior art date
Application number
KR1019910024114A
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English (en)
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KR100232617B1 (ko
Inventor
존 로보다 마크
Original Assignee
노만 에드워드 루이스
다우 코닝 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 노만 에드워드 루이스, 다우 코닝 코포레이션 filed Critical 노만 에드워드 루이스
Publication of KR920014375A publication Critical patent/KR920014375A/ko
Application granted granted Critical
Publication of KR100232617B1 publication Critical patent/KR100232617B1/ko

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208—Oxides, e.g. ceramics
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1291—Process of deposition of the inorganic material by heating of the substrate

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Formation Of Insulating Films (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)
  • Chemically Coating (AREA)

Abstract

내용 없음

Description

역방향 열분해 공정
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 피복한 박편시료들을 처리하는데 사용하는 튜브회로의 구조를 도시한 것이다, 제2도는 원형적인 역방향 열분해 반응기의 구조를 도시한 것이다.

Claims (3)

  1. 기판에 프리세라믹화합물을 함유하는 피복물을 적용하고, 피복물의 외측면에서 이의 세라믹화를 막기에 충분한 유동 속도및 온도를 갖고 있는 냉각기체를 흘려보내면서 기판을 피복물의 내측표면의 세라믹화를 촉진하기에 충분한 온도까지 가열함으로써 피복물내의 온도 구배를 만들며 피복물 외측면의 세라믹화를 촉진하기에 충분하게 피복물내의 온도 구배를 감소시킴을 포함하여, 기판상에 세라믹 피복물을 형성시키는 방법.
  2. 제1항에 있어서, 기판을 용매와 프리세라믹화합물을 함유하는 용액으로 피복시킨 다음, 용매를 증발시킴을 포함하는 방법으로 피복물이 적용되는 방법.
  3. 제1항에 있어서, 시간에 따라 기체 온도 또는 유동속도를 조정하는 방법, 시간에 따라 열원을 조정하는 방법, 및 피복물의 외측면을 세라믹화하기에 충분한 시간 동안 열원과 기체온도 및 유동속도를 유지시키는 방법으로 이루어진 그룹에서 선택되는 방법으로 온도구배가 감소되는 방법.
    ※ 참고사항 : 최초출원내용에 의하여 공개되는 것임.
KR1019910024114A 1990-12-24 1991-12-24 역방향 열분해 공정에 의한 세라믹 피복물 형성방법 KR100232617B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US7/633,707 1990-12-24
US07/633,707 1990-12-24
US07/633,707 US5380553A (en) 1990-12-24 1990-12-24 Reverse direction pyrolysis processing

Publications (2)

Publication Number Publication Date
KR920014375A true KR920014375A (ko) 1992-07-30
KR100232617B1 KR100232617B1 (ko) 1999-12-01

Family

ID=24540781

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910024114A KR100232617B1 (ko) 1990-12-24 1991-12-24 역방향 열분해 공정에 의한 세라믹 피복물 형성방법

Country Status (8)

Country Link
US (1) US5380553A (ko)
EP (1) EP0492826B1 (ko)
JP (1) JP3044318B2 (ko)
KR (1) KR100232617B1 (ko)
CA (1) CA2057082A1 (ko)
DE (1) DE69112797T2 (ko)
ES (1) ES2079587T3 (ko)
TW (1) TW228510B (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200065784A (ko) 2018-11-30 2020-06-09 한국과학기술연구원 세슘 이온 흡착제, 이의 제조방법 및 이를 이용한 세슘 이온 제거 방법

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JP2739902B2 (ja) * 1993-09-30 1998-04-15 東京応化工業株式会社 酸化ケイ素系被膜形成用塗布液
US6284584B1 (en) 1993-12-17 2001-09-04 Stmicroelectronics, Inc. Method of masking for periphery salicidation of active regions
US6107194A (en) * 1993-12-17 2000-08-22 Stmicroelectronics, Inc. Method of fabricating an integrated circuit
US5439846A (en) * 1993-12-17 1995-08-08 Sgs-Thomson Microelectronics, Inc. Self-aligned method for forming contact with zero offset to gate
JPH0855810A (ja) * 1994-08-16 1996-02-27 Nec Kyushu Ltd 拡散炉
US5508062A (en) 1994-12-02 1996-04-16 Dow Corning Corporation Method for forming an insoluble coating on a substrate
EP0720223B1 (en) * 1994-12-30 2003-03-26 STMicroelectronics S.r.l. Process for the production of a semiconductor device having better interface adhesion between dielectric layers
US6117233A (en) * 1995-02-07 2000-09-12 Max-Planck-Gesellschaft Zur Forderung De Formation of single-crystal thin SiC films
US5786023A (en) * 1996-02-13 1998-07-28 Maxwell; James L. Method and apparatus for the freeform growth of three-dimensional structures using pressurized precursor flows and growth rate control
US5731260A (en) * 1996-02-13 1998-03-24 Aerojet-General Corporation Binding of sorbent in assembling solid sorption compressor cores
US5707683A (en) * 1996-02-22 1998-01-13 Dow Corning Corporation Electronic coating composition method of coating an electronic substrate, composition and article
JP3415741B2 (ja) * 1997-03-31 2003-06-09 東レ・ダウコーニング・シリコーン株式会社 電気絶縁性薄膜形成用組成物および電気絶縁性薄膜の形成方法
JP3354431B2 (ja) * 1997-03-31 2002-12-09 東レ・ダウコーニング・シリコーン株式会社 電気絶縁性薄膜形成用組成物および電気絶縁性薄膜の形成方法
US6350704B1 (en) 1997-10-14 2002-02-26 Micron Technology Inc. Porous silicon oxycarbide integrated circuit insulator
US6633623B2 (en) * 2000-11-29 2003-10-14 General Electric Company Apparatus and methods for protecting a jet pump nozzle assembly and inlet-mixer
KR101032624B1 (ko) * 2009-06-22 2011-05-06 엘지전자 주식회사 태양 전지 및 그 제조 방법

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200065784A (ko) 2018-11-30 2020-06-09 한국과학기술연구원 세슘 이온 흡착제, 이의 제조방법 및 이를 이용한 세슘 이온 제거 방법

Also Published As

Publication number Publication date
JP3044318B2 (ja) 2000-05-22
US5380553A (en) 1995-01-10
CA2057082A1 (en) 1992-06-25
JPH04300678A (ja) 1992-10-23
ES2079587T3 (es) 1996-01-16
DE69112797D1 (de) 1995-10-12
EP0492826A2 (en) 1992-07-01
EP0492826B1 (en) 1995-09-06
TW228510B (ko) 1994-08-21
DE69112797T2 (de) 1996-05-02
KR100232617B1 (ko) 1999-12-01
EP0492826A3 (en) 1993-03-03

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