KR920014375A - 역방향 열분해 공정 - Google Patents
역방향 열분해 공정 Download PDFInfo
- Publication number
- KR920014375A KR920014375A KR1019910024114A KR910024114A KR920014375A KR 920014375 A KR920014375 A KR 920014375A KR 1019910024114 A KR1019910024114 A KR 1019910024114A KR 910024114 A KR910024114 A KR 910024114A KR 920014375 A KR920014375 A KR 920014375A
- Authority
- KR
- South Korea
- Prior art keywords
- coating
- temperature
- sufficient
- ceramicization
- flow rate
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1291—Process of deposition of the inorganic material by heating of the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Formation Of Insulating Films (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
- Chemically Coating (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 피복한 박편시료들을 처리하는데 사용하는 튜브회로의 구조를 도시한 것이다, 제2도는 원형적인 역방향 열분해 반응기의 구조를 도시한 것이다.
Claims (3)
- 기판에 프리세라믹화합물을 함유하는 피복물을 적용하고, 피복물의 외측면에서 이의 세라믹화를 막기에 충분한 유동 속도및 온도를 갖고 있는 냉각기체를 흘려보내면서 기판을 피복물의 내측표면의 세라믹화를 촉진하기에 충분한 온도까지 가열함으로써 피복물내의 온도 구배를 만들며 피복물 외측면의 세라믹화를 촉진하기에 충분하게 피복물내의 온도 구배를 감소시킴을 포함하여, 기판상에 세라믹 피복물을 형성시키는 방법.
- 제1항에 있어서, 기판을 용매와 프리세라믹화합물을 함유하는 용액으로 피복시킨 다음, 용매를 증발시킴을 포함하는 방법으로 피복물이 적용되는 방법.
- 제1항에 있어서, 시간에 따라 기체 온도 또는 유동속도를 조정하는 방법, 시간에 따라 열원을 조정하는 방법, 및 피복물의 외측면을 세라믹화하기에 충분한 시간 동안 열원과 기체온도 및 유동속도를 유지시키는 방법으로 이루어진 그룹에서 선택되는 방법으로 온도구배가 감소되는 방법.※ 참고사항 : 최초출원내용에 의하여 공개되는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/633,707 | 1990-12-24 | ||
US7/633,707 | 1990-12-24 | ||
US07/633,707 US5380553A (en) | 1990-12-24 | 1990-12-24 | Reverse direction pyrolysis processing |
Publications (2)
Publication Number | Publication Date |
---|---|
KR920014375A true KR920014375A (ko) | 1992-07-30 |
KR100232617B1 KR100232617B1 (ko) | 1999-12-01 |
Family
ID=24540781
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019910024114A KR100232617B1 (ko) | 1990-12-24 | 1991-12-24 | 역방향 열분해 공정에 의한 세라믹 피복물 형성방법 |
Country Status (8)
Country | Link |
---|---|
US (1) | US5380553A (ko) |
EP (1) | EP0492826B1 (ko) |
JP (1) | JP3044318B2 (ko) |
KR (1) | KR100232617B1 (ko) |
CA (1) | CA2057082A1 (ko) |
DE (1) | DE69112797T2 (ko) |
ES (1) | ES2079587T3 (ko) |
TW (1) | TW228510B (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20200065784A (ko) | 2018-11-30 | 2020-06-09 | 한국과학기술연구원 | 세슘 이온 흡착제, 이의 제조방법 및 이를 이용한 세슘 이온 제거 방법 |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5387480A (en) * | 1993-03-08 | 1995-02-07 | Dow Corning Corporation | High dielectric constant coatings |
EP0627763B1 (en) * | 1993-05-31 | 2004-12-15 | STMicroelectronics S.r.l. | Process for improving the adhesion between dielectric layers at their interface in semiconductor devices manufacture |
JP2739902B2 (ja) * | 1993-09-30 | 1998-04-15 | 東京応化工業株式会社 | 酸化ケイ素系被膜形成用塗布液 |
US6284584B1 (en) | 1993-12-17 | 2001-09-04 | Stmicroelectronics, Inc. | Method of masking for periphery salicidation of active regions |
US5439846A (en) * | 1993-12-17 | 1995-08-08 | Sgs-Thomson Microelectronics, Inc. | Self-aligned method for forming contact with zero offset to gate |
US6107194A (en) * | 1993-12-17 | 2000-08-22 | Stmicroelectronics, Inc. | Method of fabricating an integrated circuit |
JPH0855810A (ja) * | 1994-08-16 | 1996-02-27 | Nec Kyushu Ltd | 拡散炉 |
US5508062A (en) | 1994-12-02 | 1996-04-16 | Dow Corning Corporation | Method for forming an insoluble coating on a substrate |
EP0720223B1 (en) * | 1994-12-30 | 2003-03-26 | STMicroelectronics S.r.l. | Process for the production of a semiconductor device having better interface adhesion between dielectric layers |
US6117233A (en) * | 1995-02-07 | 2000-09-12 | Max-Planck-Gesellschaft Zur Forderung De | Formation of single-crystal thin SiC films |
US5731260A (en) * | 1996-02-13 | 1998-03-24 | Aerojet-General Corporation | Binding of sorbent in assembling solid sorption compressor cores |
US5786023A (en) * | 1996-02-13 | 1998-07-28 | Maxwell; James L. | Method and apparatus for the freeform growth of three-dimensional structures using pressurized precursor flows and growth rate control |
US5707683A (en) * | 1996-02-22 | 1998-01-13 | Dow Corning Corporation | Electronic coating composition method of coating an electronic substrate, composition and article |
JP3354431B2 (ja) * | 1997-03-31 | 2002-12-09 | 東レ・ダウコーニング・シリコーン株式会社 | 電気絶縁性薄膜形成用組成物および電気絶縁性薄膜の形成方法 |
JP3415741B2 (ja) * | 1997-03-31 | 2003-06-09 | 東レ・ダウコーニング・シリコーン株式会社 | 電気絶縁性薄膜形成用組成物および電気絶縁性薄膜の形成方法 |
US6350704B1 (en) | 1997-10-14 | 2002-02-26 | Micron Technology Inc. | Porous silicon oxycarbide integrated circuit insulator |
US6633623B2 (en) * | 2000-11-29 | 2003-10-14 | General Electric Company | Apparatus and methods for protecting a jet pump nozzle assembly and inlet-mixer |
KR101032624B1 (ko) | 2009-06-22 | 2011-05-06 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3615272A (en) * | 1968-11-04 | 1971-10-26 | Dow Corning | Condensed soluble hydrogensilsesquioxane resin |
US4756977A (en) * | 1986-12-03 | 1988-07-12 | Dow Corning Corporation | Multilayer ceramics from hydrogen silsesquioxane |
US4822697A (en) * | 1986-12-03 | 1989-04-18 | Dow Corning Corporation | Platinum and rhodium catalysis of low temperature formation multilayer ceramics |
US4911992A (en) * | 1986-12-04 | 1990-03-27 | Dow Corning Corporation | Platinum or rhodium catalyzed multilayer ceramic coatings from hydrogen silsesquioxane resin and metal oxides |
US4749631B1 (en) * | 1986-12-04 | 1993-03-23 | Multilayer ceramics from silicate esters | |
DE3707224A1 (de) * | 1987-03-06 | 1988-09-15 | Wacker Chemie Gmbh | Verfahren zur herstellung eines schutzueberzuges auf basis von siliciumcarbid |
JPS6486975A (en) * | 1987-09-29 | 1989-03-31 | Permelec Electrode Ltd | Preparation of calcium phosphate compound coated composite material |
US4847162A (en) * | 1987-12-28 | 1989-07-11 | Dow Corning Corporation | Multilayer ceramics coatings from the ceramification of hydrogen silsequioxane resin in the presence of ammonia |
US4842888A (en) * | 1988-04-07 | 1989-06-27 | Dow Corning Corporation | Ceramic coatings from the pyrolysis in ammonia of mixtures of silicate esters and other metal oxide precursors |
JP2512402B2 (ja) * | 1988-06-22 | 1996-07-03 | 日新製鋼株式会社 | ジルコニア膜の製造方法 |
US4973526A (en) * | 1990-02-15 | 1990-11-27 | Dow Corning Corporation | Method of forming ceramic coatings and resulting articles |
-
1990
- 1990-12-24 US US07/633,707 patent/US5380553A/en not_active Expired - Fee Related
-
1991
- 1991-11-26 TW TW080109280A patent/TW228510B/zh active
- 1991-12-03 EP EP91311212A patent/EP0492826B1/en not_active Expired - Lifetime
- 1991-12-03 ES ES91311212T patent/ES2079587T3/es not_active Expired - Lifetime
- 1991-12-03 DE DE69112797T patent/DE69112797T2/de not_active Expired - Fee Related
- 1991-12-05 CA CA002057082A patent/CA2057082A1/en not_active Abandoned
- 1991-12-24 KR KR1019910024114A patent/KR100232617B1/ko not_active IP Right Cessation
- 1991-12-24 JP JP3340555A patent/JP3044318B2/ja not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20200065784A (ko) | 2018-11-30 | 2020-06-09 | 한국과학기술연구원 | 세슘 이온 흡착제, 이의 제조방법 및 이를 이용한 세슘 이온 제거 방법 |
Also Published As
Publication number | Publication date |
---|---|
EP0492826A2 (en) | 1992-07-01 |
JPH04300678A (ja) | 1992-10-23 |
DE69112797T2 (de) | 1996-05-02 |
EP0492826A3 (en) | 1993-03-03 |
EP0492826B1 (en) | 1995-09-06 |
JP3044318B2 (ja) | 2000-05-22 |
US5380553A (en) | 1995-01-10 |
ES2079587T3 (es) | 1996-01-16 |
CA2057082A1 (en) | 1992-06-25 |
TW228510B (ko) | 1994-08-21 |
KR100232617B1 (ko) | 1999-12-01 |
DE69112797D1 (de) | 1995-10-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR920014375A (ko) | 역방향 열분해 공정 | |
KR920021622A (ko) | 세라믹 또는 고온 초전도체상에 얇은 보호성 폴리이미드층을 생성시키는 방법 | |
KR960022871A (ko) | 복합 전자 피막 | |
KR950019957A (ko) | 감광막의 스트립핑 방법 | |
CA2175041A1 (en) | Chemical vapour infiltration process of a pyrocarbon matrix within a porous substrate with creation of a temperature gradient in the substrate | |
GB2331767A (en) | Densification of a porous structure (I) | |
JPS5474514A (en) | Flexible tube and its manufacturing method | |
KR840000435A (ko) | 코발트 함유의 강자성 산화철의 제조방법 | |
KR900007925A (ko) | 고온 반응 처리 방법 | |
JPS55152161A (en) | Thermal treatment of copper coating | |
ES2093220T3 (es) | Procedimiento para el esmaltado de un substrato de vidrio, y composicion de esmalte utilizada. | |
JPS52121685A (en) | Article coated with fluorine resin | |
JPS5481131A (en) | Process for reducting hydrogen permeating quantity in metal surface | |
JPS5777100A (en) | Crucible for growing single crystal | |
KR920022576A (ko) | 고온 초전도 박막의 제조방법 | |
FR2321949A1 (fr) | Revetement de substrats par poudre dispersee dans du fluide, comportant l'evaporation du fluide avant chauffage de la poudre a temperature filmogene | |
KR890015977A (ko) | 열 분해에 의한 초전도 금속산화물 필름의 제조 | |
KR960007833A (ko) | 액상성장(液相成長)방법 및 장치 | |
JPS6487779A (en) | Formation of metal oxide film | |
KR890013815A (ko) | 큐리 온도가 높은 초전도성 산화물의 박막을 제조하는 방법 | |
JPS55128485A (en) | Preparing method for thermal transfer ink ribbon | |
KR970022373A (ko) | 광학 기재상에 발수성 피막을 제조하기 위한 물질 및 그 피막의 제조방법 | |
Freeman et al. | A note on stellar winds and breezes | |
JPS6487778A (en) | Formation of metal oxide film | |
JPS5635481A (en) | Nitrification of molybdenum |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
LAPS | Lapse due to unpaid annual fee |