KR890013815A - 큐리 온도가 높은 초전도성 산화물의 박막을 제조하는 방법 - Google Patents

큐리 온도가 높은 초전도성 산화물의 박막을 제조하는 방법 Download PDF

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KR890013815A
KR890013815A KR1019890001756A KR890001756A KR890013815A KR 890013815 A KR890013815 A KR 890013815A KR 1019890001756 A KR1019890001756 A KR 1019890001756A KR 890001756 A KR890001756 A KR 890001756A KR 890013815 A KR890013815 A KR 890013815A
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South Korea
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thin film
superconducting oxide
temperature
support
oxide
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KR1019890001756A
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English (en)
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히데유끼 쿠로사와
토시오 히라이
히사노리 야마네
Original Assignee
토시오 히라이
토시모리 야스시
히사노리 야마네
가부시끼가이샤 리켄
아까바네 노부히사
신기쥬쯔카이하쯔지 교단
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Priority claimed from JP63032594A external-priority patent/JPH01208323A/ja
Priority claimed from JP63049411A external-priority patent/JPH01224219A/ja
Priority claimed from JP63148942A external-priority patent/JPH029716A/ja
Application filed by 토시오 히라이, 토시모리 야스시, 히사노리 야마네, 가부시끼가이샤 리켄, 아까바네 노부히사, 신기쥬쯔카이하쯔지 교단 filed Critical 토시오 히라이
Publication of KR890013815A publication Critical patent/KR890013815A/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/408—Oxides of copper or solid solutions thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/225—Complex oxides based on rare earth copper oxides, e.g. high T-superconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0436—Processes for depositing or forming copper oxide superconductor layers by chemical vapour deposition [CVD]
    • H10N60/0464—Processes for depositing or forming copper oxide superconductor layers by chemical vapour deposition [CVD] by metalloorganic chemical vapour deposition [MOCVD]

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

내용 없음.

Description

큐리 온도가 높은 초전도성 산화물의 박막을 제조하는 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 단면도로 본 발명에 따른 방법을 나태내는데 이용할 수 있는 장치에 대한 개략도이다.
제2도는 지르코니아 지지체에 대한 X-선 분광 도표이다.
제3도는 지르코니아 지지체 위에 증착된 초전도성 산화물막에 대한 X-선 분광 도표이다.

Claims (10)

  1. 적어도 바륨, 이트륨 및 구리를 포함하는 원소용 증발원(여기서, 증발원은 각각 유기 착화합물로 이루어진다)을 1,000℃이하의 온도영역에서 화학증착시켜 세라믹 박막을 지지체 위에 형성시킴을 포함하여, 초전도성 산화물을 구성하는 금속 원소용 증발원과 산소를 함유하는 캐리어 가스를 사용하는 화학증착기술로 큐리온도가 높은 초전도덩 산화물의 박막을 제조하는 방법.
  2. 제1항에 있어서, 초전도성 산화물을 구성하는 금속 원소용 증발원 모두가 β-디케톤 착화합물로서 존재하는 방법.
  3. 제1항에 있어서, 초전도성 산화물로의 원소의 조성비가 캐리어 가스의 유속과 각각의 증발원에 대한 가열온도를 조절함으로써 조정되는 방법.
  4. 제1항에 있어서, 지지체 위에 형성되는 산화물 박막의 열처리가 증착 캠버 속에서 연속적으로 수행되는 방법.
  5. 800℃ 이상의 온도에서 지지체 위에 화학조성이 Ba2YCu3On←Y인 배향된 산화물 박막을 형성시킴을 포함하여, 초전도성 산화물을 구성하는 금속 원소용 증발원과 산소를 함유하는 태리어 가스를 사용하는 화학증착기술로 큐리온도가 높은 초전도성 산화물의 박막을 제조하는 방법.
  6. 제5항에 있어서, 형성되는 박막의 결정 배향이 [0,0,1]의 방향인 방법.
  7. 제5항에 있어서, 지지체가 다결정으로 이루어지는 방법.
  8. 제5항에 있어서, 지지체가 단일결정으로 이루어지는 방법.
  9. 제5항에 또는 제8항에 있어서, 화학 조성이 Ba2YCu3On←Y인 박막이 1,000℃ 이하의 온도와 감압의 화학증착조건하에서 적층식 결정성장 형태로 단일결정의 지지체 위에 형성되는 방법.
  10. 제9항에 있어서, 지지체가 스트론튬 티타네이트의 단일결정으로 이루어지고, 800 내지 950℃의 온도로 가열되는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890001756A 1988-02-17 1989-02-16 큐리 온도가 높은 초전도성 산화물의 박막을 제조하는 방법 KR890013815A (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP63032594A JPH01208323A (ja) 1988-02-17 1988-02-17 薄膜製造法
JP?32594/1988? 1988-02-17
JP?49411/1988? 1988-03-02
JP63049411A JPH01224219A (ja) 1988-03-02 1988-03-02 超電導セラミック薄膜の製造方法
JP?148942/1988? 1988-06-16
JP63148942A JPH029716A (ja) 1988-06-16 1988-06-16 超電導薄膜の製造方法

Publications (1)

Publication Number Publication Date
KR890013815A true KR890013815A (ko) 1989-09-26

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ID=27287772

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KR1019890001756A KR890013815A (ko) 1988-02-17 1989-02-16 큐리 온도가 높은 초전도성 산화물의 박막을 제조하는 방법

Country Status (3)

Country Link
EP (1) EP0329103B2 (ko)
KR (1) KR890013815A (ko)
DE (1) DE68922919T3 (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5173474A (en) * 1990-04-18 1992-12-22 Xerox Corporation Silicon substrate having an epitaxial superconducting layer thereon and method of making same
DE69132972T2 (de) * 1991-01-07 2003-03-13 Ibm Supraleitender Feldeffekttransistor mit inverser MISFET-Struktur und Verfahren zu dessen Herstellung

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3119707A (en) * 1960-03-31 1964-01-28 Space Technology Lab Inc Method for the deposition of thin films by electron deposition
EP0055459A1 (en) * 1980-12-29 1982-07-07 Rikuun Electric co. Process for producing oxides using chemical vapour deposition
FR2626110A1 (fr) * 1988-01-19 1989-07-21 Thomson Csf Procede de realisation par epitaxie d'une couche d'un materiau supraconducteur
CA1338202C (en) * 1988-02-10 1996-04-02 Robert George Charles Chemical vapor deposition of oxide films containing alkaline earth metals from metal-organic sources

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Publication number Publication date
DE68922919T2 (de) 1995-12-07
EP0329103A2 (en) 1989-08-23
EP0329103A3 (en) 1990-10-10
DE68922919D1 (de) 1995-07-13
EP0329103B2 (en) 1999-03-17
DE68922919T3 (de) 1999-09-30
EP0329103B1 (en) 1995-06-07

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