KR890004447A - 초전도 재료 및 초전도박막의 제조방법 - Google Patents
초전도 재료 및 초전도박막의 제조방법 Download PDFInfo
- Publication number
- KR890004447A KR890004447A KR1019880009830A KR880009830A KR890004447A KR 890004447 A KR890004447 A KR 890004447A KR 1019880009830 A KR1019880009830 A KR 1019880009830A KR 880009830 A KR880009830 A KR 880009830A KR 890004447 A KR890004447 A KR 890004447A
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- KR
- South Korea
- Prior art keywords
- superconducting
- thin film
- producing
- generated
- manufacturing
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000000463 material Substances 0.000 title claims description 4
- 239000010409 thin film Substances 0.000 title claims 5
- 239000010408 film Substances 0.000 claims 4
- 150000002500 ions Chemical class 0.000 claims 3
- 239000002184 metal Substances 0.000 claims 3
- 229910052751 metal Inorganic materials 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- 239000000919 ceramic Substances 0.000 claims 2
- 239000007789 gas Substances 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 239000002887 superconductor Substances 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 230000008020 evaporation Effects 0.000 claims 1
- 238000001704 evaporation Methods 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0026—Activation or excitation of reactive gases outside the coating chamber
- C23C14/0031—Bombardment of substrates by reactive ion beams
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/087—Oxides of copper or solid solutions thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/408—Oxides of copper or solid solutions thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
- C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
- C23C4/11—Oxides
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0492—Processes for depositing or forming copper oxide superconductor layers by thermal spraying, e.g. plasma deposition
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0548—Processes for depositing or forming copper oxide superconductor layers by deposition and subsequent treatment, e.g. oxidation of pre-deposited material
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
- Y10S505/73—Vacuum treating or coating
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
- Y10S505/73—Vacuum treating or coating
- Y10S505/732—Evaporative coating with superconducting material
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/786—Manufacturing system or apparatus for making high temperature, i.e. tc greater than 30 k superconductor product, device, article or stock, i.e. which system or apparatus does not itself contain a superconducting component
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Oxygen, Ozone, And Oxides In General (AREA)
Abstract
내용 없음.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 초전도재료의 제조방법을 설명하기 위한 장치의 개략도.
제3도는 본 발명에 의해서 얻어진 초전도재료의 특성의 일예를 나타낸 도면.
제4도는 본 발명의 다른 실시예를 나타낸 개략도.
Claims (5)
- 산화물 초전도체의 제조공정에서 적어도 산소플라즈마를 사용한 것을 특징으로 하는 초전도재료의 제조방법.
- 세라믹스계 초전도막의 제조방법에서 차동 배기기구에 의해 고진공화된 증발실에서 발생한 초전도체구성의 금속원소의 증기와 플라즈마 실에서 발생한 이온의 가스를 기판위에서 반응시켜 결정화시키면서 막성장을 행하는 것을 특징으로 하는 초전도박막의 제조방법.
- 특허청구의 범위 제2항에 있어서, 전자 사이클로트론 공면 마이크로파 플라즈마 발생장치 또는 고주파 플라즈마 발생장치에설 발생한 이온의 플라즈마를 이용하는 것을 특징으로 하는 초전도 박막의 제조방법.
- 특허청구의 범위 제2항에 있어서, 다원소의 금속류가 각각 유량 제어되어 있는 것을 특징으로 하는 초전도 박막의 제조방법.
- 세라믹스계 초전도막의 형성법에서 차동 배기기구에 의해 고진공화 된 증기실에서 발생한 초전도체 구성의 금속원소의 증기와 플라즈마 실에서 발생한 이온의가스를 기판위에서 반응시키고, 기판 온도를 400℃이상으로 유지하면서 막성장을 행하는 초전도 박막의 제조방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19618687 | 1987-08-07 | ||
JP62-196186 | 1987-08-07 | ||
JP62-251497 | 1987-10-07 | ||
JP62251497A JP2539458B2 (ja) | 1987-10-07 | 1987-10-07 | 超電導薄膜の製造方法及び装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR890004447A true KR890004447A (ko) | 1989-04-22 |
KR910007382B1 KR910007382B1 (ko) | 1991-09-25 |
Family
ID=26509600
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019880009830A KR910007382B1 (ko) | 1987-08-07 | 1988-08-01 | 초전도 재료 및 초전도 박막의 제조방법 |
Country Status (4)
Country | Link |
---|---|
US (2) | US4950642A (ko) |
EP (1) | EP0302506B1 (ko) |
KR (1) | KR910007382B1 (ko) |
DE (1) | DE3852979T2 (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102270772B1 (ko) | 2020-06-23 | 2021-06-28 | 김의택 | 근력강화 운동기구 |
KR102455185B1 (ko) | 2021-06-21 | 2022-10-17 | 김의택 | 근력강화 운동기구 |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH075435B2 (ja) * | 1987-03-31 | 1995-01-25 | 住友電気工業株式会社 | 超電導薄膜の製造方法及び装置 |
EP0288711B1 (en) * | 1987-04-28 | 1995-02-22 | International Business Machines Corporation | Rapid, large area coating of high-Tc superconductors |
JP2557486B2 (ja) * | 1987-08-20 | 1996-11-27 | 住友電気工業株式会社 | 超電導セラミックス長尺体の製造方法および超電導セラミックス長尺体 |
US5158931A (en) * | 1988-03-16 | 1992-10-27 | Kabushiki Kaisha Toshiba | Method for manufacturing an oxide superconductor thin film |
EP0429536A4 (en) * | 1988-08-19 | 1993-12-15 | Regents Of The University Of Minnesota | Preparation of superconductive ceramic oxides using ozone |
EP0387456B1 (en) * | 1989-02-10 | 1993-09-22 | Kabushiki Kaisha Toshiba | Method for vapor-phase growth of an oxide thin film |
DE3923008A1 (de) * | 1989-07-12 | 1991-01-17 | Hoechst Ag | Verfahren zur herstellung oxidkeramischer formkoerper durch thermisches spritzen |
DE3927168A1 (de) * | 1989-08-17 | 1991-02-21 | Hoechst Ag | Verfahren zum thermischen spritzen von oxidkeramischen supraleitenden materialien |
US4987102A (en) * | 1989-12-04 | 1991-01-22 | Motorola, Inc. | Process for forming high purity thin films |
AU7653391A (en) * | 1990-03-16 | 1991-10-10 | Conductus, Inc. | High temperature superconducting films on aluminum oxide substrates |
EP0456600A1 (de) * | 1990-05-11 | 1991-11-13 | Plasma-Invent Ag | Verfahren zum Herstellen von dünnen Schichten aus supraleitender Mischkeramik |
JPH04219301A (ja) * | 1990-07-25 | 1992-08-10 | Semiconductor Energy Lab Co Ltd | 酸化物超伝導薄膜の作製方法 |
WO1992006798A1 (en) * | 1990-10-16 | 1992-04-30 | Superconductor Technologies, Inc. | In situ growth of superconducting films |
US5707692A (en) * | 1990-10-23 | 1998-01-13 | Canon Kabushiki Kaisha | Apparatus and method for processing a base substance using plasma and a magnetic field |
US5779802A (en) * | 1990-12-10 | 1998-07-14 | Imec V.Z.W. | Thin film deposition chamber with ECR-plasma source |
DE4108001C1 (ko) * | 1991-03-13 | 1992-07-09 | Forschungszentrum Juelich Gmbh, 5170 Juelich, De | |
US5633192A (en) * | 1991-03-18 | 1997-05-27 | Boston University | Method for epitaxially growing gallium nitride layers |
US7235819B2 (en) * | 1991-03-18 | 2007-06-26 | The Trustees Of Boston University | Semiconductor device having group III nitride buffer layer and growth layers |
JPH0788578B2 (ja) * | 1991-07-10 | 1995-09-27 | 財団法人国際超電導産業技術研究センター | 酸化物薄膜の製造方法および装置 |
JPH0570931A (ja) * | 1991-09-11 | 1993-03-23 | Canon Inc | 真空蒸着装置および防着板 |
JPH069297A (ja) * | 1991-12-09 | 1994-01-18 | Sumitomo Electric Ind Ltd | 成膜装置 |
WO1993013240A1 (en) * | 1991-12-23 | 1993-07-08 | Prince John H | System for depositing superconducting films |
DE59309018D1 (de) * | 1992-07-02 | 1998-11-05 | Balzers Hochvakuum | Verfahren zur Herstellung einer Metalloxidschicht, Vakuumbehandlungsanlage hierfür sowie mit mindestens einer Metalloxidschicht beschichteter Teil |
JP3008970B2 (ja) * | 1993-07-27 | 2000-02-14 | 財団法人国際超電導産業技術研究センター | Y123型結晶構造を有する酸化物結晶膜 |
FR2695944B1 (fr) * | 1992-09-24 | 1994-11-18 | Onera (Off Nat Aerospatiale) | Appareil de dépôt chimique en phase vapeur activé par un plasma micro-ondes. |
WO1995002709A2 (en) * | 1993-07-15 | 1995-01-26 | President And Fellows Of Harvard College | EXTENDED NITRIDE MATERIAL COMPRISING β-C3N¿4? |
JPH07133192A (ja) * | 1993-11-04 | 1995-05-23 | Sumitomo Electric Ind Ltd | 成膜装置および成膜方法 |
US5399388A (en) * | 1994-02-28 | 1995-03-21 | The United States Of America As Represented By The Secretary Of The Navy | Method of forming thin films on substrates at low temperatures |
US6270861B1 (en) * | 1994-07-21 | 2001-08-07 | Ut, Battelle Llc | Individually controlled environments for pulsed addition and crystallization |
US5458686A (en) * | 1995-03-03 | 1995-10-17 | Neocera, Inc. | Pulsed laser passive filter deposition system |
US5637146A (en) * | 1995-03-30 | 1997-06-10 | Saturn Cosmos Co., Ltd. | Method for the growth of nitride based semiconductors and its apparatus |
DE19540543A1 (de) * | 1995-10-31 | 1997-05-07 | Leybold Ag | Vorrichtung zum Beschichten eines Substrats mit Hilfe des Chemical-Vapor-Deposition-Verfahrens |
IL117657A0 (en) * | 1996-03-26 | 1996-07-23 | Technion Res & Dev Foundation | Ceramic target for thin film deposition |
EP0816292B1 (en) * | 1996-06-27 | 2000-01-05 | The Honjo Chemical Corporation | Process for producing lithium manganese oxide with spinel structure |
US5849371A (en) * | 1996-07-22 | 1998-12-15 | Beesley; Dwayne | Laser and laser-assisted free electron beam deposition apparatus and method |
JP2003158308A (ja) * | 2001-11-22 | 2003-05-30 | Communication Research Laboratory | 超伝導材料の製造方法 |
FR2840925B1 (fr) * | 2002-06-18 | 2005-04-01 | Riber | Chambre d'evaporation de materiaux sous vide a pompage differentiel |
CN100562700C (zh) * | 2004-04-12 | 2009-11-25 | 财团法人北九州产业学术推进机构 | 使用微波的减压干燥方法及其装置 |
US9343289B2 (en) | 2012-07-27 | 2016-05-17 | Applied Materials, Inc. | Chemistry compatible coating material for advanced device on-wafer particle performance |
US10060048B2 (en) * | 2012-10-25 | 2018-08-28 | Wetling Ip Ccg Ltd | Method for preparing high quality crystals by directing ionized gas molecules through and/or over a saturated solution comprising a protein |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4268711A (en) * | 1979-04-26 | 1981-05-19 | Optical Coating Laboratory, Inc. | Method and apparatus for forming films from vapors using a contained plasma source |
US4336277A (en) * | 1980-09-29 | 1982-06-22 | The Regents Of The University Of California | Transparent electrical conducting films by activated reactive evaporation |
GB2085482B (en) * | 1980-10-06 | 1985-03-06 | Optical Coating Laboratory Inc | Forming thin film oxide layers using reactive evaporation techniques |
US4483725A (en) * | 1982-09-30 | 1984-11-20 | At&T Bell Laboratories | Reactive vapor deposition of multiconstituent material |
US4514437A (en) * | 1984-05-02 | 1985-04-30 | Energy Conversion Devices, Inc. | Apparatus for plasma assisted evaporation of thin films and corresponding method of deposition |
US4888202A (en) * | 1986-07-31 | 1989-12-19 | Nippon Telegraph And Telephone Corporation | Method of manufacturing thin compound oxide film and apparatus for manufacturing thin oxide film |
US4793908A (en) * | 1986-12-29 | 1988-12-27 | Rockwell International Corporation | Multiple ion source method and apparatus for fabricating multilayer optical films |
JP2711253B2 (ja) * | 1987-03-18 | 1998-02-10 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 超伝導膜及びその形成方法 |
US4900716A (en) * | 1987-05-18 | 1990-02-13 | Sumitomo Electric Industries, Ltd. | Process for producing a compound oxide type superconducting material |
DE3886586T2 (de) * | 1987-05-26 | 1994-04-28 | Sumitomo Electric Industries | Verfahren zur Herstellung einer dünnen Schicht aus supraleitendem Mischoxid. |
EP0365533A1 (de) * | 1987-06-12 | 1990-05-02 | Siemens Aktiengesellschaft | Verfahren zur herstellung von leiterbereichen aus einem oxidkeramischen supraleitermaterial hoher sprungtemperatur |
FR2617645B1 (fr) * | 1987-07-03 | 1989-10-20 | Thomson Csf | Dispositif en materiau supraconducteur et procede de realisation |
-
1988
- 1988-08-01 KR KR1019880009830A patent/KR910007382B1/ko not_active IP Right Cessation
- 1988-08-04 EP EP88112744A patent/EP0302506B1/en not_active Expired - Lifetime
- 1988-08-04 DE DE3852979T patent/DE3852979T2/de not_active Expired - Fee Related
- 1988-08-05 US US07/228,750 patent/US4950642A/en not_active Expired - Fee Related
-
1990
- 1990-07-24 US US07/560,844 patent/US5316585A/en not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102270772B1 (ko) | 2020-06-23 | 2021-06-28 | 김의택 | 근력강화 운동기구 |
KR102455185B1 (ko) | 2021-06-21 | 2022-10-17 | 김의택 | 근력강화 운동기구 |
KR20220169945A (ko) | 2021-06-21 | 2022-12-28 | 김의택 | 근력강화 운동기구 |
Also Published As
Publication number | Publication date |
---|---|
EP0302506A2 (en) | 1989-02-08 |
DE3852979D1 (de) | 1995-03-23 |
US4950642A (en) | 1990-08-21 |
EP0302506A3 (en) | 1990-05-16 |
EP0302506B1 (en) | 1995-02-08 |
KR910007382B1 (ko) | 1991-09-25 |
DE3852979T2 (de) | 1995-05-24 |
US5316585A (en) | 1994-05-31 |
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