KR890004447A - 초전도 재료 및 초전도박막의 제조방법 - Google Patents

초전도 재료 및 초전도박막의 제조방법 Download PDF

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KR890004447A
KR890004447A KR1019880009830A KR880009830A KR890004447A KR 890004447 A KR890004447 A KR 890004447A KR 1019880009830 A KR1019880009830 A KR 1019880009830A KR 880009830 A KR880009830 A KR 880009830A KR 890004447 A KR890004447 A KR 890004447A
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superconducting
thin film
producing
generated
manufacturing
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KR1019880009830A
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KR910007382B1 (ko
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유끼오 오까모또
도시유끼 아이다
가쯔끼 미야우찌
가즈마사 다까기
도꾸우미 후까자와
신지 다까야마
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미다 가쓰시게
가부시기가이샤 히다찌세이사꾸쇼
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    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/517Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
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    • C23C4/00Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/10Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
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    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10N60/00Superconducting devices
    • H10N60/01Manufacture or treatment
    • H10N60/0268Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296Processes for depositing or forming copper oxide superconductor layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/01Manufacture or treatment
    • H10N60/0268Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0492Processes for depositing or forming copper oxide superconductor layers by thermal spraying, e.g. plasma deposition
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    • H10N60/00Superconducting devices
    • H10N60/01Manufacture or treatment
    • H10N60/0268Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0548Processes for depositing or forming copper oxide superconductor layers by deposition and subsequent treatment, e.g. oxidation of pre-deposited material
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00Superconductor technology: apparatus, material, process
    • Y10S505/725Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73Vacuum treating or coating
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10S505/00Superconductor technology: apparatus, material, process
    • Y10S505/725Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73Vacuum treating or coating
    • Y10S505/732Evaporative coating with superconducting material
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00Superconductor technology: apparatus, material, process
    • Y10S505/786Manufacturing system or apparatus for making high temperature, i.e. tc greater than 30 k superconductor product, device, article or stock, i.e. which system or apparatus does not itself contain a superconducting component

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  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)

Abstract

내용 없음.

Description

초전도 재료 및 초전도박막의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 초전도재료의 제조방법을 설명하기 위한 장치의 개략도.
제3도는 본 발명에 의해서 얻어진 초전도재료의 특성의 일예를 나타낸 도면.
제4도는 본 발명의 다른 실시예를 나타낸 개략도.

Claims (5)

  1. 산화물 초전도체의 제조공정에서 적어도 산소플라즈마를 사용한 것을 특징으로 하는 초전도재료의 제조방법.
  2. 세라믹스계 초전도막의 제조방법에서 차동 배기기구에 의해 고진공화된 증발실에서 발생한 초전도체구성의 금속원소의 증기와 플라즈마 실에서 발생한 이온의 가스를 기판위에서 반응시켜 결정화시키면서 막성장을 행하는 것을 특징으로 하는 초전도박막의 제조방법.
  3. 특허청구의 범위 제2항에 있어서, 전자 사이클로트론 공면 마이크로파 플라즈마 발생장치 또는 고주파 플라즈마 발생장치에설 발생한 이온의 플라즈마를 이용하는 것을 특징으로 하는 초전도 박막의 제조방법.
  4. 특허청구의 범위 제2항에 있어서, 다원소의 금속류가 각각 유량 제어되어 있는 것을 특징으로 하는 초전도 박막의 제조방법.
  5. 세라믹스계 초전도막의 형성법에서 차동 배기기구에 의해 고진공화 된 증기실에서 발생한 초전도체 구성의 금속원소의 증기와 플라즈마 실에서 발생한 이온의가스를 기판위에서 반응시키고, 기판 온도를 400℃이상으로 유지하면서 막성장을 행하는 초전도 박막의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880009830A 1987-08-07 1988-08-01 초전도 재료 및 초전도 박막의 제조방법 KR910007382B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP19618687 1987-08-07
JP62-196186 1987-08-07
JP62-251497 1987-10-07
JP62251497A JP2539458B2 (ja) 1987-10-07 1987-10-07 超電導薄膜の製造方法及び装置

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KR890004447A true KR890004447A (ko) 1989-04-22
KR910007382B1 KR910007382B1 (ko) 1991-09-25

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US (2) US4950642A (ko)
EP (1) EP0302506B1 (ko)
KR (1) KR910007382B1 (ko)
DE (1) DE3852979T2 (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102270772B1 (ko) 2020-06-23 2021-06-28 김의택 근력강화 운동기구
KR102455185B1 (ko) 2021-06-21 2022-10-17 김의택 근력강화 운동기구

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH075435B2 (ja) * 1987-03-31 1995-01-25 住友電気工業株式会社 超電導薄膜の製造方法及び装置
EP0288711B1 (en) * 1987-04-28 1995-02-22 International Business Machines Corporation Rapid, large area coating of high-Tc superconductors
JP2557486B2 (ja) * 1987-08-20 1996-11-27 住友電気工業株式会社 超電導セラミックス長尺体の製造方法および超電導セラミックス長尺体
US5158931A (en) * 1988-03-16 1992-10-27 Kabushiki Kaisha Toshiba Method for manufacturing an oxide superconductor thin film
EP0429536A4 (en) * 1988-08-19 1993-12-15 Regents Of The University Of Minnesota Preparation of superconductive ceramic oxides using ozone
EP0387456B1 (en) * 1989-02-10 1993-09-22 Kabushiki Kaisha Toshiba Method for vapor-phase growth of an oxide thin film
DE3923008A1 (de) * 1989-07-12 1991-01-17 Hoechst Ag Verfahren zur herstellung oxidkeramischer formkoerper durch thermisches spritzen
DE3927168A1 (de) * 1989-08-17 1991-02-21 Hoechst Ag Verfahren zum thermischen spritzen von oxidkeramischen supraleitenden materialien
US4987102A (en) * 1989-12-04 1991-01-22 Motorola, Inc. Process for forming high purity thin films
AU7653391A (en) * 1990-03-16 1991-10-10 Conductus, Inc. High temperature superconducting films on aluminum oxide substrates
EP0456600A1 (de) * 1990-05-11 1991-11-13 Plasma-Invent Ag Verfahren zum Herstellen von dünnen Schichten aus supraleitender Mischkeramik
JPH04219301A (ja) * 1990-07-25 1992-08-10 Semiconductor Energy Lab Co Ltd 酸化物超伝導薄膜の作製方法
WO1992006798A1 (en) * 1990-10-16 1992-04-30 Superconductor Technologies, Inc. In situ growth of superconducting films
US5707692A (en) * 1990-10-23 1998-01-13 Canon Kabushiki Kaisha Apparatus and method for processing a base substance using plasma and a magnetic field
US5779802A (en) * 1990-12-10 1998-07-14 Imec V.Z.W. Thin film deposition chamber with ECR-plasma source
DE4108001C1 (ko) * 1991-03-13 1992-07-09 Forschungszentrum Juelich Gmbh, 5170 Juelich, De
US5633192A (en) * 1991-03-18 1997-05-27 Boston University Method for epitaxially growing gallium nitride layers
US7235819B2 (en) * 1991-03-18 2007-06-26 The Trustees Of Boston University Semiconductor device having group III nitride buffer layer and growth layers
JPH0788578B2 (ja) * 1991-07-10 1995-09-27 財団法人国際超電導産業技術研究センター 酸化物薄膜の製造方法および装置
JPH0570931A (ja) * 1991-09-11 1993-03-23 Canon Inc 真空蒸着装置および防着板
JPH069297A (ja) * 1991-12-09 1994-01-18 Sumitomo Electric Ind Ltd 成膜装置
WO1993013240A1 (en) * 1991-12-23 1993-07-08 Prince John H System for depositing superconducting films
DE59309018D1 (de) * 1992-07-02 1998-11-05 Balzers Hochvakuum Verfahren zur Herstellung einer Metalloxidschicht, Vakuumbehandlungsanlage hierfür sowie mit mindestens einer Metalloxidschicht beschichteter Teil
JP3008970B2 (ja) * 1993-07-27 2000-02-14 財団法人国際超電導産業技術研究センター Y123型結晶構造を有する酸化物結晶膜
FR2695944B1 (fr) * 1992-09-24 1994-11-18 Onera (Off Nat Aerospatiale) Appareil de dépôt chimique en phase vapeur activé par un plasma micro-ondes.
WO1995002709A2 (en) * 1993-07-15 1995-01-26 President And Fellows Of Harvard College EXTENDED NITRIDE MATERIAL COMPRISING β-C3N¿4?
JPH07133192A (ja) * 1993-11-04 1995-05-23 Sumitomo Electric Ind Ltd 成膜装置および成膜方法
US5399388A (en) * 1994-02-28 1995-03-21 The United States Of America As Represented By The Secretary Of The Navy Method of forming thin films on substrates at low temperatures
US6270861B1 (en) * 1994-07-21 2001-08-07 Ut, Battelle Llc Individually controlled environments for pulsed addition and crystallization
US5458686A (en) * 1995-03-03 1995-10-17 Neocera, Inc. Pulsed laser passive filter deposition system
US5637146A (en) * 1995-03-30 1997-06-10 Saturn Cosmos Co., Ltd. Method for the growth of nitride based semiconductors and its apparatus
DE19540543A1 (de) * 1995-10-31 1997-05-07 Leybold Ag Vorrichtung zum Beschichten eines Substrats mit Hilfe des Chemical-Vapor-Deposition-Verfahrens
IL117657A0 (en) * 1996-03-26 1996-07-23 Technion Res & Dev Foundation Ceramic target for thin film deposition
EP0816292B1 (en) * 1996-06-27 2000-01-05 The Honjo Chemical Corporation Process for producing lithium manganese oxide with spinel structure
US5849371A (en) * 1996-07-22 1998-12-15 Beesley; Dwayne Laser and laser-assisted free electron beam deposition apparatus and method
JP2003158308A (ja) * 2001-11-22 2003-05-30 Communication Research Laboratory 超伝導材料の製造方法
FR2840925B1 (fr) * 2002-06-18 2005-04-01 Riber Chambre d'evaporation de materiaux sous vide a pompage differentiel
CN100562700C (zh) * 2004-04-12 2009-11-25 财团法人北九州产业学术推进机构 使用微波的减压干燥方法及其装置
US9343289B2 (en) 2012-07-27 2016-05-17 Applied Materials, Inc. Chemistry compatible coating material for advanced device on-wafer particle performance
US10060048B2 (en) * 2012-10-25 2018-08-28 Wetling Ip Ccg Ltd Method for preparing high quality crystals by directing ionized gas molecules through and/or over a saturated solution comprising a protein

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4268711A (en) * 1979-04-26 1981-05-19 Optical Coating Laboratory, Inc. Method and apparatus for forming films from vapors using a contained plasma source
US4336277A (en) * 1980-09-29 1982-06-22 The Regents Of The University Of California Transparent electrical conducting films by activated reactive evaporation
GB2085482B (en) * 1980-10-06 1985-03-06 Optical Coating Laboratory Inc Forming thin film oxide layers using reactive evaporation techniques
US4483725A (en) * 1982-09-30 1984-11-20 At&T Bell Laboratories Reactive vapor deposition of multiconstituent material
US4514437A (en) * 1984-05-02 1985-04-30 Energy Conversion Devices, Inc. Apparatus for plasma assisted evaporation of thin films and corresponding method of deposition
US4888202A (en) * 1986-07-31 1989-12-19 Nippon Telegraph And Telephone Corporation Method of manufacturing thin compound oxide film and apparatus for manufacturing thin oxide film
US4793908A (en) * 1986-12-29 1988-12-27 Rockwell International Corporation Multiple ion source method and apparatus for fabricating multilayer optical films
JP2711253B2 (ja) * 1987-03-18 1998-02-10 インターナショナル・ビジネス・マシーンズ・コーポレーション 超伝導膜及びその形成方法
US4900716A (en) * 1987-05-18 1990-02-13 Sumitomo Electric Industries, Ltd. Process for producing a compound oxide type superconducting material
DE3886586T2 (de) * 1987-05-26 1994-04-28 Sumitomo Electric Industries Verfahren zur Herstellung einer dünnen Schicht aus supraleitendem Mischoxid.
EP0365533A1 (de) * 1987-06-12 1990-05-02 Siemens Aktiengesellschaft Verfahren zur herstellung von leiterbereichen aus einem oxidkeramischen supraleitermaterial hoher sprungtemperatur
FR2617645B1 (fr) * 1987-07-03 1989-10-20 Thomson Csf Dispositif en materiau supraconducteur et procede de realisation

Cited By (3)

* Cited by examiner, † Cited by third party
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KR102270772B1 (ko) 2020-06-23 2021-06-28 김의택 근력강화 운동기구
KR102455185B1 (ko) 2021-06-21 2022-10-17 김의택 근력강화 운동기구
KR20220169945A (ko) 2021-06-21 2022-12-28 김의택 근력강화 운동기구

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DE3852979D1 (de) 1995-03-23
US4950642A (en) 1990-08-21
EP0302506A3 (en) 1990-05-16
EP0302506B1 (en) 1995-02-08
KR910007382B1 (ko) 1991-09-25
DE3852979T2 (de) 1995-05-24
US5316585A (en) 1994-05-31

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