FR2617645B1 - Dispositif en materiau supraconducteur et procede de realisation - Google Patents

Dispositif en materiau supraconducteur et procede de realisation

Info

Publication number
FR2617645B1
FR2617645B1 FR8709463A FR8709463A FR2617645B1 FR 2617645 B1 FR2617645 B1 FR 2617645B1 FR 8709463 A FR8709463 A FR 8709463A FR 8709463 A FR8709463 A FR 8709463A FR 2617645 B1 FR2617645 B1 FR 2617645B1
Authority
FR
France
Prior art keywords
producing
same
superconducting material
superconducting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8709463A
Other languages
English (en)
Other versions
FR2617645A1 (fr
Inventor
Dominique Dieumegard
Louis-Michel Mercandalli
Guy Garry
Didier Pribat
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR8709463A priority Critical patent/FR2617645B1/fr
Priority to JP63505524A priority patent/JPH02504259A/ja
Priority to PCT/FR1988/000337 priority patent/WO1989000343A1/fr
Priority to EP88905886A priority patent/EP0323501A1/fr
Publication of FR2617645A1 publication Critical patent/FR2617645A1/fr
Application granted granted Critical
Publication of FR2617645B1 publication Critical patent/FR2617645B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0661—Processes performed after copper oxide formation, e.g. patterning

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
FR8709463A 1987-07-03 1987-07-03 Dispositif en materiau supraconducteur et procede de realisation Expired FR2617645B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR8709463A FR2617645B1 (fr) 1987-07-03 1987-07-03 Dispositif en materiau supraconducteur et procede de realisation
JP63505524A JPH02504259A (ja) 1987-07-03 1988-06-24 超伝導体装置とその製造方法
PCT/FR1988/000337 WO1989000343A1 (fr) 1987-07-03 1988-06-24 Dispositif en materiau supraconducteur et procede de realisation
EP88905886A EP0323501A1 (fr) 1987-07-03 1988-06-24 Dispositif en materiau supraconducteur et procede de realisation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8709463A FR2617645B1 (fr) 1987-07-03 1987-07-03 Dispositif en materiau supraconducteur et procede de realisation

Publications (2)

Publication Number Publication Date
FR2617645A1 FR2617645A1 (fr) 1989-01-06
FR2617645B1 true FR2617645B1 (fr) 1989-10-20

Family

ID=9352852

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8709463A Expired FR2617645B1 (fr) 1987-07-03 1987-07-03 Dispositif en materiau supraconducteur et procede de realisation

Country Status (4)

Country Link
EP (1) EP0323501A1 (fr)
JP (1) JPH02504259A (fr)
FR (1) FR2617645B1 (fr)
WO (1) WO1989000343A1 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0298866B1 (fr) * 1987-07-06 1996-05-01 Sumitomo Electric Industries Limited Couche mince supraconductrice et procédé pour sa fabrication
DE3889989T2 (de) * 1987-07-17 1994-12-01 Sumitomo Electric Industries Supraleitende Dünnschicht und Verfahren zu deren Herstellung.
KR910007382B1 (ko) * 1987-08-07 1991-09-25 가부시기가이샤 히다찌세이사꾸쇼 초전도 재료 및 초전도 박막의 제조방법
DE3736301A1 (de) * 1987-10-27 1989-05-11 Basf Ag Verfahren zum einstellen der sprungtemperatur von keramischen supraleitern
FR2626409B1 (fr) * 1988-01-22 1991-09-06 Thomson Csf Dispositif en materiau supraconducteur et procede de realisation
FR2641530B2 (fr) * 1988-01-29 1993-05-28 Centre Nat Rech Scient Nouveau materiau composite, procede de fabrication et application
JPH07106882B2 (ja) * 1988-09-14 1995-11-15 帝人株式会社 導電性酸化物の製造方法
US5358925A (en) * 1990-04-18 1994-10-25 Board Of Trustees Of The Leland Stanford Junior University Silicon substrate having YSZ epitaxial barrier layer and an epitaxial superconducting layer
RU2567021C2 (ru) * 2009-10-02 2015-10-27 АМБАЧЕР Эл.Эл.Си. Пленки с чрезвычайно низким сопротивлением и способы их модифицирования или создания

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2529384B1 (fr) * 1982-06-25 1986-04-11 Thomson Csf Procede de reduction de compose en couche sur un substrat et son application a la fabrication de structure semi-conductrice a effet de champ
FR2542500B1 (fr) * 1983-03-11 1986-08-29 Thomson Csf Procede de fabrication d'un dispositif semiconducteur du type comprenant au moins une couche de silicium deposee sur un substrat isolant

Also Published As

Publication number Publication date
EP0323501A1 (fr) 1989-07-12
FR2617645A1 (fr) 1989-01-06
WO1989000343A1 (fr) 1989-01-12
JPH02504259A (ja) 1990-12-06

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Legal Events

Date Code Title Description
ST Notification of lapse