JPS5567526A - Production of zinc oxide thin film - Google Patents
Production of zinc oxide thin filmInfo
- Publication number
- JPS5567526A JPS5567526A JP13772878A JP13772878A JPS5567526A JP S5567526 A JPS5567526 A JP S5567526A JP 13772878 A JP13772878 A JP 13772878A JP 13772878 A JP13772878 A JP 13772878A JP S5567526 A JPS5567526 A JP S5567526A
- Authority
- JP
- Japan
- Prior art keywords
- zinc
- zinc oxide
- oxygen
- thin film
- oxide thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title abstract 11
- 239000011787 zinc oxide Substances 0.000 title abstract 5
- 239000010409 thin film Substances 0.000 title abstract 3
- 239000011701 zinc Substances 0.000 abstract 7
- 229910052725 zinc Inorganic materials 0.000 abstract 7
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 3
- 229910052760 oxygen Inorganic materials 0.000 abstract 3
- 239000001301 oxygen Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 239000004215 Carbon black (E152) Substances 0.000 abstract 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 abstract 2
- 230000005684 electric field Effects 0.000 abstract 2
- 229930195733 hydrocarbon Natural products 0.000 abstract 2
- 150000002430 hydrocarbons Chemical class 0.000 abstract 2
- -1 zinc alkoxide Chemical class 0.000 abstract 2
- 229910002092 carbon dioxide Inorganic materials 0.000 abstract 1
- 239000001569 carbon dioxide Substances 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- VUZPPFZMUPKLLV-UHFFFAOYSA-N methane;hydrate Chemical compound C.O VUZPPFZMUPKLLV-UHFFFAOYSA-N 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Landscapes
- Physical Vapour Deposition (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
PURPOSE: To vaporize zinc at a low temp. and grow a zinc oxide thin film in a short time by thermally decomposing zinc alkoxide and reacting the resulting zinc vapor with oxygen in the atmosphere to form zinc oxide, which is then deposited on a substrate.
CONSTITUTION: Zinc alkoxide is put into crucible 12, heated, vaporized, and decomposed into zinc and hydrocarbon. The zinc vapor reacts with oxygen in the atmosphere to form zinc oxide, and the hydrocarbon is converted into carbon dioxide and water. In order to accelerate the zinc-oxygen reaction, they are pref. ionized or activated. By setting coil-form electrode 13 in the vicinity of a vapor spouting hole and applying a high frequency electric field electrons are emitted to ionize or activate the zinc and the oxygen. It is desirable to facilitate crystal growth of a zinc oxide thin film on a substrate by applying a DC electric field between substrate holder 11 and crucible 12.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13772878A JPS5567526A (en) | 1978-11-08 | 1978-11-08 | Production of zinc oxide thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13772878A JPS5567526A (en) | 1978-11-08 | 1978-11-08 | Production of zinc oxide thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5567526A true JPS5567526A (en) | 1980-05-21 |
Family
ID=15205434
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13772878A Pending JPS5567526A (en) | 1978-11-08 | 1978-11-08 | Production of zinc oxide thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5567526A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60125369A (en) * | 1983-12-12 | 1985-07-04 | Mitsubishi Electric Corp | Vapor deposition device for thin film |
-
1978
- 1978-11-08 JP JP13772878A patent/JPS5567526A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60125369A (en) * | 1983-12-12 | 1985-07-04 | Mitsubishi Electric Corp | Vapor deposition device for thin film |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR890004447A (en) | Superconducting Materials and Manufacturing Method of Superconducting Thin Film | |
| FR2464309B1 (en) | PROCESS FOR PRODUCING GOLD-COLORED COATINGS | |
| JPS5713174A (en) | Reactive sputtering method | |
| KR960034479A (en) | METHOD FOR MANUFACTING OXIDE FILM AND METHOD FOR PRODUCING THE SAME | |
| JPS5567526A (en) | Production of zinc oxide thin film | |
| JPS5773178A (en) | Production of oxide | |
| CA1154177A (en) | Amorphous silicon mis device | |
| EP0244874A3 (en) | Luminescent material, process for producing it and luminescent semiconductor device using it | |
| JPS6459729A (en) | Manufacture of superconducting thin film | |
| JPS5550462A (en) | Preparation of zinc oxide thin film | |
| WO1998059355A3 (en) | Cold cathode and methods for producing the same | |
| JPS53110378A (en) | Plasma carrying device | |
| JPS52151555A (en) | Manufacture of luminous screen | |
| JPS6446936A (en) | Growth method of thin film | |
| JPS5633475A (en) | Manufacture of exterior ornamental parts | |
| JPS568816A (en) | Manufacture of amorphous silicon film | |
| JPS54119400A (en) | Production of nitrogen compound of 3b group element | |
| JPS5527868A (en) | Production of zinc oxide thin film | |
| JPS61124561A (en) | Manufacture of compound thin film | |
| JPH01162757A (en) | Formation of carbon film | |
| JPS61238954A (en) | Formation of thin polycrystalline film | |
| JPS54137973A (en) | Formation method of plasma nitride | |
| JPS5380158A (en) | Vapor phase growth for compound semiconductor | |
| JPS6473778A (en) | Formation of superconductive material of oxide | |
| JPS6417867A (en) | Manufacture of carbon and boron nitride |