JPS61124561A - Manufacture of compound thin film - Google Patents

Manufacture of compound thin film

Info

Publication number
JPS61124561A
JPS61124561A JP23552284A JP23552284A JPS61124561A JP S61124561 A JPS61124561 A JP S61124561A JP 23552284 A JP23552284 A JP 23552284A JP 23552284 A JP23552284 A JP 23552284A JP S61124561 A JPS61124561 A JP S61124561A
Authority
JP
Japan
Prior art keywords
ion beam
substrate
thin film
reactive gas
compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP23552284A
Other languages
Japanese (ja)
Other versions
JPS6315346B2 (en
Inventor
Makoto Kitahata
真 北畠
Kiyotaka Wasa
清孝 和佐
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Science & Tech Agency
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Science & Tech Agency
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Science & Tech Agency, Agency of Industrial Science and Technology filed Critical Science & Tech Agency
Priority to JP23552284A priority Critical patent/JPS61124561A/en
Publication of JPS61124561A publication Critical patent/JPS61124561A/en
Publication of JPS6315346B2 publication Critical patent/JPS6315346B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/46—Sputtering by ion beam produced by an external ion source
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221—Ion beam deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To form a compound thin film with good controllability and safety by placing a substrate in a place where an ion beam is irradiated, when the compound thin film by a reactive gas and a target substance is formed on the substrate by an ion beam spatter device. CONSTITUTION:A thin film of NbN, etc. is formed on the surface of a substrate 4 of a quartz plate, etc., for which oxygen, hydrogen, nitrogen, etc. have been used as a reaction gas, and a target 3 of Nb, etc. has been used, by irradiating an ion beam 2 from an ion source 1. In this case, the substrate 4 is placed so that its surface 5 becomes roughly parallel to the ion beam 2. The ion beam 2 has an expanse to some extent, therefore, a part of its beam is irradiated to the substrate surface 5, a compound by a reactive gas and a target substance is obtained, and since the quantity and energy of the reactive gas can be set optionally, the controllability is excellent, and also since the substrate 4 is placed near the target, vapor-depositing speed of the compound can be increased.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、化合物薄膜を制御性良く安定に得るための製
造方法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a manufacturing method for stably obtaining a compound thin film with good controllability.

従来の技術 化合物薄膜は従来反応性ガスを導入した熱蒸着や反応性
スパッタ法等により形成されている（例えば、「薄膜の
基本技術ｊ金原榮、東京大学出版会（１９７６））。Conventional technology Compound thin films have conventionally been formed by thermal evaporation using reactive gases, reactive sputtering, etc. (for example, ``Basic Technology of Thin Films'' by Ei Kanehara, University of Tokyo Press (1976)).

発明が解決しようとする問題点 これらの方法においては膜の形成物質と反応性ガスとの
反応により化合物薄膜が形成されるが、上記反応が不十
分であったり、反応により膜中にひずみが起こり膜が不
安定となったり等、制御性。Problems to be Solved by the Invention In these methods, a thin compound film is formed by a reaction between a film-forming substance and a reactive gas, but the reaction may be insufficient or strain may occur in the film due to the reaction. Controllability, such as film instability.

安定性に問題があった。There were stability issues.

問題点を解決するための手段 上記問題点を解決するため本発明では、イオンビームス
パッタ装置において、反応性ガスを含むイオンビームを
用い、上記イオンビームが照射される場所に基板を置く
ことにより、ターゲット物質と反応性ガスからなる化合
物薄膜を制御性、安定性良く製造する方法を提供する。Means for Solving the Problems In order to solve the above problems, in the present invention, an ion beam containing a reactive gas is used in an ion beam sputtering apparatus, and a substrate is placed at a location where the ion beam is irradiated. Provided is a method for producing a compound thin film consisting of a target material and a reactive gas with good controllability and stability.

作　　用 イオン化されてエネルギーを与えられてイオンビームと
なった反応性ガスは、気体状態にある場合に比べて反応
性が非常に高いため、ターゲット物質との反応が十分に
進んだ膜が形成される。また、膜中のひずみ等もこのイ
オン化されてエネルギーを与えられた反応性ガスの照射
によって緩和されて、安定な膜が形成できる。これらの
効果は反応性ガスのイオンビームが基板に照射される場
合に起こるが、本発明においては１つの反応性ガスを含
むイオンビームを用いて、このイオンビームがターゲッ
トのスパッタを行うと同時に基板へも反応性ガスのイオ
ンを照射する。複数のイオンビームを使用する場合に比
べて装置が簡単となる。Function The reactive gas that has been ionized and given energy to become an ion beam has much higher reactivity than when it is in a gaseous state, so a film is formed where the reaction with the target material has sufficiently progressed. Ru. In addition, the strain in the film is alleviated by the irradiation of the ionized and energized reactive gas, so that a stable film can be formed. These effects occur when a substrate is irradiated with an ion beam of a reactive gas, but in the present invention, an ion beam containing one reactive gas is used, and the ion beam sputters a target and simultaneously irradiates the substrate. It also irradiates reactive gas ions. The apparatus is simpler than when multiple ion beams are used.

実施例 第１図に本発明の化合物薄膜の製造方法に用いたイオン
ビームスパッタ装置の一実施例を示す。EXAMPLE FIG. 1 shows an example of an ion beam sputtering apparatus used in the method of manufacturing a compound thin film of the present invention.

イオンソース１から反応性ガスを含むイオンビーム２が
照射され、ターゲット３に当たる。基板４は図のように
基板表面５がイオンビームに対してほぼ平行となるよう
に置く。イオンビーム２はある程度の拡がりを持つため
基板表面６にその一部が当たることとなり、反応性ガス
とターゲット物質の化合物が得られる。反応性ガスの量
及びエネルギーは任意に設定できるため制御性に富み、
ターゲット３の近くに基板４を置いているため蒸着レー
トが高くなり、高速蒸着が可能である。An ion beam 2 containing a reactive gas is irradiated from an ion source 1 and hits a target 3. The substrate 4 is placed so that the substrate surface 5 is approximately parallel to the ion beam as shown in the figure. Since the ion beam 2 has a certain degree of spread, a portion of the ion beam 2 hits the substrate surface 6, and a compound of the reactive gas and the target material is obtained. The amount and energy of reactive gas can be set arbitrarily, so it is highly controllable.
Since the substrate 4 is placed near the target 3, the evaporation rate is high and high-speed evaporation is possible.

（実施例１） 反応性ガスとして窒素を用い、イオンビーム２としては
アルゴンと窒素の混合気体を用いる。Ｎｂのターゲット
３をスパッタして溶融石英基板４上に蒸着すると、安定
なＮｂＮ　　膜が得られた。この場合、イオンビーム２
が照射されない位置（例えば第１図の６）に基板を置〈
従来の膜形成によると膜は第３図の写真に示すように荒
れ７が認められた。本発明の製造方法により膜が安定化
されたと考えられ、第２図のような荒れは見られなく、
第３図の写真のように平滑な表面となる。(Example 1) Nitrogen is used as the reactive gas, and a mixed gas of argon and nitrogen is used as the ion beam 2. When a Nb target 3 was sputtered and deposited on a fused silica substrate 4, a stable NbN film was obtained. In this case, ion beam 2
Place the substrate in a position where it will not be irradiated (for example, 6 in Figure 1).
According to conventional film formation, roughness 7 was observed in the film as shown in the photograph of FIG. It is thought that the film was stabilized by the manufacturing method of the present invention, and no roughness was observed as shown in Figure 2.
The surface will be smooth as shown in the photo in Figure 3.

（実施例２） 反応性ガスとして水素を用い、イオンビーム２としては
アルゴンと水素の混合気体を用いる。炭素のターゲット
３をスパッタしてａ　−Ｃ：　Ｈ（水素化アモルファス
炭素膜）を作製すると、ダイヤモンドライクな硬質な高
絶縁の（ｉ−Ｃと呼ばれている）膜が得られた。この場
合、イオンビーム２としてアルゴンのみの気体を用い、
水素をガスとして導入した場合には、水素の反応性が弱
くなり、このようなｉ−Ｃと云える様な高絶縁の膜は得
られなかった。(Example 2) Hydrogen is used as the reactive gas, and a mixed gas of argon and hydrogen is used as the ion beam 2. When a carbon target 3 was sputtered to produce a-C:H (hydrogenated amorphous carbon film), a diamond-like, hard, and highly insulating film (referred to as i-C) was obtained. In this case, only argon gas is used as the ion beam 2,
When hydrogen was introduced as a gas, the reactivity of hydrogen was weakened, and a highly insulating film that could be called i-C could not be obtained.

ここでは窒素と水素についてＮｂと炭素との化合物につ
いてそれぞれ述べたが、他の物質との化合物でも同様の
効果を示し、酸素との化合物でも同様である。また、こ
れ以外の反応性ガスについても有効である。Here, we have described compounds of Nb and carbon with respect to nitrogen and hydrogen, but compounds with other substances also exhibit similar effects, and compounds with oxygen also have the same effect. It is also effective for other reactive gases.

発明の効果 本発明の製造方法は、イオンビームスパッタ装置におい
て、反応性ガスを含むイオンビームを用いることにより
、イオン化されエネルギーを持った反応性ガスを基板に
照射しつつ膜形成を行わせることにより、制御性良く安
定性の良い化合物薄膜を形成可能とするものであり、本
発明の工業的価値は高い。Effects of the Invention The manufacturing method of the present invention uses an ion beam containing a reactive gas in an ion beam sputtering apparatus to form a film while irradiating the substrate with the ionized and energetic reactive gas. , it is possible to form a compound thin film with good controllability and good stability, and the industrial value of the present invention is high.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本発明の製造方法に用いたイオンビームスパッ
タ装置、第２図は本発明の製造方法によるＮｂＮ　薄膜
の表面顕微鏡写真、第３図は従来の製造方法によるＮｂ
Ｎ　薄膜の荒れた表面を示す電子顕微鏡写真である。 １・・・・・・イオンソース、２・・・・・・イオンビ
ーム、３・・・・・・ターゲット、４・・・・・・基板
、６・・・・・基板表面。 代理人の氏名　弁理士　中　尾　敏　男　ほか１名第１
図 第３図 手続補正書（方式） ％式％ １事件の表示　　　　　　　　　　嘴駄昭和６９年特許
願第２３５５２２す ２発明の名称 化合物薄膜の製造方法 ３補正をする者 ４代理人　〒５７１ 住　所　　大阪府門真市大字門真１００６番地松下電器
産業株式会社内 ６補正命令の日刊 ７、補正の内容 （１）明細書第６ページ第２０行目〜第６ページ第３行
目の「第２図は〜である。」を「第２図は本発明の製造
方法によるＮｂＮ薄膜の表面状態を示す図、第３図は従
来の製造方法によるＮｂＮ薄膜の荒れた表面状態を示す
図である。」と補正します。 （２）図面の第２図、第３図を別紙の通り補正します。Figure 1 shows the ion beam sputtering apparatus used in the manufacturing method of the present invention, Figure 2 shows a surface micrograph of the NbN thin film produced by the manufacturing method of the present invention, and Figure 3 shows the NbN film produced by the conventional manufacturing method.
It is an electron micrograph showing the rough surface of the N thin film. 1... Ion source, 2... Ion beam, 3... Target, 4... Substrate, 6... Substrate surface. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure 3 Procedural amendment (method) % formula % 1 Indication of the case Tsuda 1988 Patent Application No. 235522 2 Name of the invention 3 Process for manufacturing compound thin film 3 Person making the amendment 4 Agent 571 Address Osaka Prefecture Matsushita Electric Industrial Co., Ltd., 1006 Oaza Kadoma City, Kadoma City 6th Amendment Order Daily 7, Contents of the Amendment (1) Details of the amendment (1) "Figure 2 is..." on page 6, line 20 to page 6, line 3 of the specification 2 is a diagram showing the surface state of the NbN thin film produced by the manufacturing method of the present invention, and FIG. 3 is a diagram showing the rough surface state of the NbN thin film produced by the conventional manufacturing method." Masu. (2) Correct figures 2 and 3 of the drawings as shown in the attached sheet.

Claims (2)

【特許請求の範囲】[Claims] （１）イオンビームスパッタ装置において反応性ガスを
含む１つのイオンビームを用い、上記イオンビームが照
射される場所に基板を置くことにより、ターゲット物質
と上記反応性ガスからなる化合物薄膜を得ることを特徴
とする化合物薄膜の製造方法。(1) By using one ion beam containing a reactive gas in an ion beam sputtering device and placing a substrate at a location where the ion beam is irradiated, a thin compound film consisting of the target material and the reactive gas can be obtained. A method for producing a characteristic compound thin film. （２）反応性ガスとして酸素、水素又は窒素を用いるこ
とを特徴とする特許請求の範囲第１項記載の化合物薄膜
の製造方法。(2) The method for producing a compound thin film according to claim 1, characterized in that oxygen, hydrogen, or nitrogen is used as the reactive gas.
JP23552284A 1984-11-08 1984-11-08 Manufacture of compound thin film Granted JPS61124561A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23552284A JPS61124561A (en) 1984-11-08 1984-11-08 Manufacture of compound thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23552284A JPS61124561A (en) 1984-11-08 1984-11-08 Manufacture of compound thin film

Publications (2)

Publication Number Publication Date
JPS61124561A true JPS61124561A (en) 1986-06-12
JPS6315346B2 JPS6315346B2 (en) 1988-04-04

Family

ID=16987219

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23552284A Granted JPS61124561A (en) 1984-11-08 1984-11-08 Manufacture of compound thin film

Country Status (1)

Country Link
JP (1) JPS61124561A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61190065A (en) * 1985-02-19 1986-08-23 Matsushita Electric Ind Co Ltd Wear-resistant parts and its production
WO2006040613A1 (en) * 2004-10-13 2006-04-20 Xenocs Method of deposition with reduction of contaminants in an ion assist beam and associated apparatus

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0266745U (en) * 1988-11-02 1990-05-21

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57174459A (en) * 1981-04-21 1982-10-27 Namiki Precision Jewel Co Ltd Formation of thin film

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57174459A (en) * 1981-04-21 1982-10-27 Namiki Precision Jewel Co Ltd Formation of thin film

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61190065A (en) * 1985-02-19 1986-08-23 Matsushita Electric Ind Co Ltd Wear-resistant parts and its production
WO2006040613A1 (en) * 2004-10-13 2006-04-20 Xenocs Method of deposition with reduction of contaminants in an ion assist beam and associated apparatus

Also Published As

Publication number Publication date
JPS6315346B2 (en) 1988-04-04

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