JPS57174459A - Formation of thin film - Google Patents
Formation of thin filmInfo
- Publication number
- JPS57174459A JPS57174459A JP6031681A JP6031681A JPS57174459A JP S57174459 A JPS57174459 A JP S57174459A JP 6031681 A JP6031681 A JP 6031681A JP 6031681 A JP6031681 A JP 6031681A JP S57174459 A JPS57174459 A JP S57174459A
- Authority
- JP
- Japan
- Prior art keywords
- substrates
- ion
- particles
- sputtering
- targets
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/46—Sputtering by ion beam produced by an external ion source
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
PURPOSE:To form thin films of high adhesiveness on the surfaces of substrates by driving ionized particles into the surfaces of the substrates and sputtering targets disposed near the substrates with part of these ion particles at the same time. CONSTITUTION:Target holders 2 mounted with targets 4 and substrate holders 3 mounted with substrates 5 are mounted respectively in proximity with each other within a driving chamber 1 of an ordinary ion implantation device. The ion particles ionized in an ion source are driven out toward the substrates 5 by energy of several tens - several hundreds KeV. Part of the driven-out ion fluxes 6 are brought into collision directly against the surfaces of the substrates 5, whereby the substrate surfaces are strongly activated by sputtering or the like. Part of the ion fluxes 6 are brought into collision against the targets 4 to drive out the particles of the target forming material by sputtering and to stick them on the substrates. As a result, the thin films of high purity and firm adhesiveness are formed on the surfaces of the substrates 5.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6031681A JPS57174459A (en) | 1981-04-21 | 1981-04-21 | Formation of thin film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6031681A JPS57174459A (en) | 1981-04-21 | 1981-04-21 | Formation of thin film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57174459A true JPS57174459A (en) | 1982-10-27 |
Family
ID=13138643
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6031681A Pending JPS57174459A (en) | 1981-04-21 | 1981-04-21 | Formation of thin film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57174459A (en) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5974279A (en) * | 1982-10-21 | 1984-04-26 | Toyota Central Res & Dev Lab Inc | Method and device for coating thin metallic film by vapor deposition |
JPS60131964A (en) * | 1983-12-20 | 1985-07-13 | Nissin Electric Co Ltd | Manufacture of film-coated body |
JPS60141869A (en) * | 1983-12-29 | 1985-07-26 | Nissin Electric Co Ltd | Method and device for forming film |
JPS61124561A (en) * | 1984-11-08 | 1986-06-12 | Science & Tech Agency | Manufacture of compound thin film |
JPS63161168A (en) * | 1986-12-24 | 1988-07-04 | Fujitsu Ltd | Formation of film by ion beam sputtering |
JPS63247367A (en) * | 1987-04-03 | 1988-10-14 | Hitachi Ltd | Ion beam sputtering device |
JPS63282265A (en) * | 1987-05-14 | 1988-11-18 | Toppan Printing Co Ltd | Ion beam sputtering device |
JPS63290262A (en) * | 1987-05-20 | 1988-11-28 | Raimuzu:Kk | Composite type surface treatment device |
US4855026A (en) * | 1988-06-02 | 1989-08-08 | Spire Corporation | Sputter enhanced ion implantation process |
JP2003247066A (en) * | 2002-02-25 | 2003-09-05 | Nagasaki Prefecture | Ion implantation method using sputtering method, and apparatus therefor |
-
1981
- 1981-04-21 JP JP6031681A patent/JPS57174459A/en active Pending
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5974279A (en) * | 1982-10-21 | 1984-04-26 | Toyota Central Res & Dev Lab Inc | Method and device for coating thin metallic film by vapor deposition |
JPS60131964A (en) * | 1983-12-20 | 1985-07-13 | Nissin Electric Co Ltd | Manufacture of film-coated body |
JPS60141869A (en) * | 1983-12-29 | 1985-07-26 | Nissin Electric Co Ltd | Method and device for forming film |
JPS61124561A (en) * | 1984-11-08 | 1986-06-12 | Science & Tech Agency | Manufacture of compound thin film |
JPS6315346B2 (en) * | 1984-11-08 | 1988-04-04 | Kagaku Gijutsucho Chokan Kanbo | |
JPS63161168A (en) * | 1986-12-24 | 1988-07-04 | Fujitsu Ltd | Formation of film by ion beam sputtering |
JPS63247367A (en) * | 1987-04-03 | 1988-10-14 | Hitachi Ltd | Ion beam sputtering device |
JPH0586476B2 (en) * | 1987-04-03 | 1993-12-13 | Hitachi Ltd | |
JPS63282265A (en) * | 1987-05-14 | 1988-11-18 | Toppan Printing Co Ltd | Ion beam sputtering device |
JPS63290262A (en) * | 1987-05-20 | 1988-11-28 | Raimuzu:Kk | Composite type surface treatment device |
JPH032947B2 (en) * | 1987-05-20 | 1991-01-17 | Surface High Performance Res | |
US4855026A (en) * | 1988-06-02 | 1989-08-08 | Spire Corporation | Sputter enhanced ion implantation process |
JP2003247066A (en) * | 2002-02-25 | 2003-09-05 | Nagasaki Prefecture | Ion implantation method using sputtering method, and apparatus therefor |
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