JPS6462461A - Sputtering device - Google Patents

Sputtering device

Info

Publication number
JPS6462461A
JPS6462461A JP21540287A JP21540287A JPS6462461A JP S6462461 A JPS6462461 A JP S6462461A JP 21540287 A JP21540287 A JP 21540287A JP 21540287 A JP21540287 A JP 21540287A JP S6462461 A JPS6462461 A JP S6462461A
Authority
JP
Japan
Prior art keywords
substrate
film
grain size
voltage
permalloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21540287A
Other languages
Japanese (ja)
Inventor
Shuji Sudo
Katsuya Mitsuoka
Shinji Narushige
Masanobu Hanazono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP21540287A priority Critical patent/JPS6462461A/en
Publication of JPS6462461A publication Critical patent/JPS6462461A/en
Pending legal-status Critical Current

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  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To obtain a sputtering device capable of changing the direction of collision of particles, controlling the growth of a columnar structure and reducing the grain size of a formed film by setting a substrate so that the substrate is vibrated by impressing AC voltage on a piezoelectric plate as a substrate holder. CONSTITUTION:A vacuum treating chamber 1 is filled with an Ar atmosphere under about 2Torr and a target 2 kept at cathode potential is sputtered with a negative high voltage power source 6. A substrate 3 is adhered to the surface of a piezoelectric element 4 placed on an insulator 5 and AC voltage is impressed on the element 4 in the direction of the thickness with an AC power source 7 to vibrate the substrate 3 together with the element 4. For example, when the target 2 is made of 'Permalloy(R)' and AC voltage of 10kHz and 300V is impressed on the element 4, a Permalloy film of 20-50nm grain size is formed on the substrate 3. When the substrate 3 is not vibrated, the grain size of a formed film is 300-1,000nm. Since the grain size of the Permalloy film formed by this invention is reduced, the coercive force of the film is reduced to about 1/3.
JP21540287A 1987-08-31 1987-08-31 Sputtering device Pending JPS6462461A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21540287A JPS6462461A (en) 1987-08-31 1987-08-31 Sputtering device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21540287A JPS6462461A (en) 1987-08-31 1987-08-31 Sputtering device

Publications (1)

Publication Number Publication Date
JPS6462461A true JPS6462461A (en) 1989-03-08

Family

ID=16671731

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21540287A Pending JPS6462461A (en) 1987-08-31 1987-08-31 Sputtering device

Country Status (1)

Country Link
JP (1) JPS6462461A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03162566A (en) * 1989-11-19 1991-07-12 Ken Takahashi Formation of thin film and thin film forming device, element, electro-magnetic device, information recording and reproducing device, signal processor and formation of molten crystal
US5277740A (en) * 1990-08-31 1994-01-11 Mitsubishi Denki Kabushiki Kaisha Apparatus and method for forming a fine pattern
WO1995000676A1 (en) * 1993-06-17 1995-01-05 Materials Research Corporation Ultrasonic enhancement of aluminum step coverage and apparatus

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03162566A (en) * 1989-11-19 1991-07-12 Ken Takahashi Formation of thin film and thin film forming device, element, electro-magnetic device, information recording and reproducing device, signal processor and formation of molten crystal
US5277740A (en) * 1990-08-31 1994-01-11 Mitsubishi Denki Kabushiki Kaisha Apparatus and method for forming a fine pattern
WO1995000676A1 (en) * 1993-06-17 1995-01-05 Materials Research Corporation Ultrasonic enhancement of aluminum step coverage and apparatus
US5520784A (en) * 1993-06-17 1996-05-28 Sony Corporation Ultrasonic enhancement of aluminum step coverage and apparatus

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