JPS60114568A - Magnetron sputtering device - Google Patents

Abstract

PURPOSE:To provide a magnetron sputtering device which is so improved as to make the utilizing efficiency of a target nearly 100% by constituting the device in such a way that magnets move in parallel with the target. CONSTITUTION:Utilizing efficiency of a target 2 of the above-described sputtering device is increased by moving laterally elliptical magnets 4, 5 back and forth on the parallel plane of the target 2 so as to sweep on the target 2 in the titled device. The target 2 and a semiconductor substrate is also provided perpendicularly in the actual disposition in the device in order to prevent sticking of dust. Preliminary chambers each having a load locking mechanism are provided on both sides of the sputtering chamber and the inside thereof is evacuated to <=10<-4>Torr. The semiconductor substrate is put into and out of the sputtering chambers through the preliminary chambers. The distance between the target 2 and the semiconductor substrate is maintained at 5-7cm and the voltage at 450-480V and when 6-7kW electric power is applied, about 1min is required to deposit 1mum Al on the substrate.

Description

DETAILED DESCRIPTION OF THE INVENTION (Evening) Technical Field of the Invention The present invention relates to a magnetron sputtering apparatus used for depositing wiring metal films and insulating films in semiconductor devices.

BACKGROUND OF THE INVENTION Currently, the ζ magnetron spuck method is mainly used to deposit wiring metal films and insulating films in semiconductor devices. Figure 1 shows the principle diagram.

In the figure, 1 is the target plate made of copper and has a negative potential applied to it. 2 is trying to adhere +A
It is a single-mouth J with a target consisting of 14 pieces, a 3-piece cooget and a 14-piece support plate, and is made of a composite layer that is compatible with both materials. 4 is the north pole of the magnet, which has a cylindrical shape with a diameter of d, and is placed in the middle of the turntable via a yoke or support plate. 5 is arranged in a ring shape with a diameter around the S and N poles of the magnet 1-. In the figure, the arrow pointing from the N pole to the S pole indicates the lines of magnetic force by 71<. (j is the sputtered crotch.) 1' is treated as a conductor base, and 7 is grounded with the electrode on which the 216 dedicated h (handled) is placed. In this system ~5・1
When argon (^r) is introduced so as to become O-3 Torr and an electric field is applied, 8r changes to i9++ and generates argon ions (^r'').

The constituent materials of target No. 1~ biased toward my-north are struck by Ar+ and are deposited on the semiconductor substrate by protruding /IW. Magnetron sputtering is a diode sputtering method consisting of a 2111 rJ electrode, with a magnetic field of 4 J.
The ion concentration is increased by +r (J<). In the figure, Ar+ is pulled towards the target by the force generated by the electric and magnetic fields (=J), and the density in this area increases. , the couget is locally consumed as shown by the dotted line, and its usage efficiency is extremely low.

Recently, in semiconductor devices, especially dynamic random access memories, where stored information is damaged by alpha rays emitted from a small amount of impurity contained in wiring holes, SW software has been targeted to prevent errors. The wiring material used is expensive because it is purified to a purity of 1/1, and the production line is in-line, so frequent replacement of the target material is not possible. For this reason, effective use of targets has become desirable.

In order to reduce the frequency of target replacement, one effective measure is to increase the plate thickness of the target. Since the film thickness is extremely different, the film thickness distribution on the wafer to be processed gradually changes during use and deviates from the standard midway through use.For this reason, increasing the film thickness is not effective.

(Regarding Prior Art and Problems) In the magnetron sputtering method, there is a method of rotating the magneto eccentrically from the center of the target as a conventional device for increasing the usage efficiency of the target.

In this case, as shown by the dotted line in FIG.
The consumable part is wide (but even this can only be used by about 50%.

(4)0Object of the invention The object of the present invention is to eliminate the above-mentioned drawbacks of the prior art,
An object of the present invention is to provide a magnetron spacing device which is characterized in that the magnetron can be moved on a plane parallel to a target and that the utilization efficiency of tarkent can be nearly 100%.

(5) 1 Structure of the Invention According to the present invention, the above object is achieved by providing a magnetron sputtering apparatus characterized in that the magnetron 1 moves parallel to the target. .

D(6)1 Embodiment of the Invention FIG. 3 shows an embodiment of the invention. The figure is a plan view illustrating the sputtering method according to the present invention, and shows the same object as in FIG. In the figure, the oval Magneno l-4
, 5 move left and right on a plane parallel to the Kuget and sweep over the target, thereby increasing the usage efficiency of the Kugeno 1-.

In actual arrangement within the apparatus, both the target node 1 and the semiconductor substrate are vertically arranged to prevent dust from adhering to the target.

Preliminary chambers with a load-lock mechanism are provided on both sides of the sputtering chamber and are evacuated to below l0=Tor+. The semiconductor substrate enters and exits through this chamber.

Assuming that the distance 1i31I between the turntable 1 and the semiconductor substrate is 5 to 7 cm, the voltage j1 is maintained at 450 to 480 V, and the electric power is set to 6 to 7), it takes about 1 minute to deposit 1 μIn of aluminum. Here, the pressure in the sputtering chamber should be set to 2 to 7.10-"
Make it l'or+, and the humanity of Tarkeno 1- is 8″φ3!Month 1 Inoko.

In the case of a 1m extension, the film is deposited on the semiconductor substrate (
1. The IIA FX distribution of a sputtered film is determined by the cosine of the incident angle at which the '41+'t-r- of a substance ejected from the target part at the position of the magnet is incident on the semiconductor substrate. The components can be integrated and calculated.If the components are swept at a constant speed, the center of the target no. 1 will be thicker and the peripheral portion of the left no. There is a way.

(a) The sweep speed is set to be faster at the center and slower at the V8 side.

(b) The input power is programmed so that it is low when the sweep magneno 1- passes through the center and not high at the periphery.

Method (a) requires mechanical control, which makes the device larger and more complicated; however, method (bl) has the advantage that once the conditions are set, the workability can be easily controlled.

This is because the target is consumed almost flat within the plane, so the distance from the target increases overall between the beginning and the middle of use, so the film thickness distribution on the wafer is not uniform. be.

(yll, Effects of the Invention As explained in Group 11 [1), according to the present invention, the use efficiency of the target can be reduced by 100% every time the magnet moves in the plane parallel to the target 1-4. It is possible to provide a magnetic sputtering apparatus characterized by:

4. Figure 1 is a diagram of a conventional magnetron sputtering device, and Figure 2 is a diagram of a conventional magnetron sputtering device.
FIG. 13 is a cross-sectional view showing how the target wears out over time, and FIG.
o In 1 So I, 1 is the support plate of the target, 2 is the target, J3 is the target and the support plate (111
．． 4 is the N pole of Magneno 1-, 5 is the S pole of Magnet, (
j is the semiconductor substrate, and 7 is the electrode plate made of moon scraps.

Toga 4

Claims (1)

[Claims] A magnetron sputtering device characterized by a magnet moving parallel to a target.