JPS627851A - Sputtering method - Google Patents

Abstract

PURPOSE:To economically form a film on a substrate surface to a uniform film thickness to meet the ruggedness on said surface in the titled method for depositing a material for deposition released from a target on the substrate by forcing either of the target and substrate to make specific motion. CONSTITUTION:For exaple, the target 3 is so constructed that the target 3 can rotate around the central part A on the surface thereof as the center of the axis of rotation to rotate the target 3 as shown by dotted lines. Since spatter particles 5 released from the target 3 are thereby made to arrive at the substrate 1 with an angle of inclination therewith, the effect similar to the effect obtd. by having relatively plural pieces of the targets is obtd. More specifically, the angle between the plane of the substrate 1 and the plane of the target 3 changes; therefore, the film having the uniform thickness to meet the ruggedness on the substrate 1 surface is formed. The performance of the film formed in the above-mentioned manner is satisfied with a piece of the target 3 and since just one set of a power source for driving the target 3 and other ancillary equipment are required, the high economy, reliability, etc. are obtd.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a sputtering method, and particularly to a sputtering method in which a deposited material ejected from a target is deposited on the surface of a substrate to form a thin film.

[Background of the invention]

In recent years, sputtering equipment is one of the most important technologies for thinning films of various materials, and needs are increasing in various fields.

In this sputtering apparatus, a permanent magnet is disposed close to the target and the plasma density is increased by orthogonal electromagnetic fields, thereby increasing the film growth rate on the substrate. This will be explained using figures.

In the figure, reference numeral 3 denotes a target on which a permanent magnet 6 is installed, which generates magnetic pole lines 4 as shown. A substrate support stand 2 on which a substrate 1 is installed is arranged opposite to this target 3. In addition, the above target 3. Although not particularly shown, the substrate support stand 2 is installed in a vacuum container.

Then, when the inside of the vacuum container is evacuated, Ar gas is introduced, so that the target 3 becomes (-) and the substrate support 2 becomes (
+), for example, by applying a high DC voltage, Ar gas is ionized to generate Ar'',
This Ar'' is attracted to the target 3 and collides with the surface,
The sputtered particles 5 thrown out by this collision are deposited on the surface of the substrate 1 to form a thin film.

By the way, when forming a thin film on the substrate 1, the film must be formed with a uniform thickness not only on the flat parts of the surface of the substrate 1, but also on the stepped parts according to the unevenness of the surface. As described in Japanese Patent Application Laid-Open No. 56-156766 (shown in FIG. 6), a plurality of targets 3
A method has been proposed in which the film thickness distribution is made uniform by arranging the films a, 3b, and 3c at different angles with respect to the substrate support 2, and performing sputtering from multiple directions.

However, although this method can be expected to significantly improve film formation performance such as film thickness distribution, since there are multiple targets, the vacuum container becomes large and the targets themselves, power supply, etc. This increases the number of attached devices, which is extremely uneconomical and reduces reliability.

[Purpose of the invention]

The present invention has been made in view of the above-mentioned points, and its purpose is not only to be able to form a film with a uniform thickness even if the substrate surface is uneven, but also to be able to form a film with a uniform thickness even if the substrate surface is uneven. The object of the present invention is to provide a sputtering method that is economical and reliable, and which eliminates the increase in

[Summary of the Invention] The present invention achieves the desired purpose by depositing a target component on a substrate by moving either the target or the substrate so that the incidence of sputtered particles from the target on the substrate is at an angle. It was designed to achieve this goal.

[Embodiments of the invention] The present invention will be described below based on embodiments shown in the drawings.

FIG. 1 shows an embodiment of the present invention.

As shown in the figure, this embodiment has a structure in which the target 3 can be rotated about the central portion A of the surface of the target 3 as the rotation axis, and the target 3 performs the rotational movement as shown by the dotted line. Therefore, the sputtered particles 5 emitted from the target 3 reach the substrate 1 at an oblique angle, so that relatively the same effect as having a plurality of targets can be obtained. That is, since the angle between the surface of the substrate 1 and the surface of the target 3 changes, a film with a uniform thickness can be formed depending on the unevenness of the surface of the substrate 1. Furthermore, it is highly reliable and economical. Further, since only one set of the power supply and other accessory devices for driving the target 3 is required, the device can be excellent in terms of economy, ease of maintenance, and reliability.

FIG. 2 shows another embodiment of the present invention, in which the target 3 is moved in an arc with the central portion B of the surface of the substrate 1 serving as the rotation axis. In this case, since the distance between the substrate 1 and the target 3 can be kept constant, even better effects can be expected.

Still other embodiments of the present invention are shown in FIGS. 3 and 4.

The example shown in FIG. 3 has a structure in which the substrate 1 can be rotated with the center portion A of the surface of the substrate 1 as the rotation axis while the substrate 1 is attached to the substrate support 2. The substrate 1 and the substrate support 2 are Perform rotational motion as shown by the dotted line. Therefore, the sputtered particles 5 emitted from the target 3 reach the substrate 1 at an inclined angle, so that the same effect as in the example of FIG. 1 can be obtained.

Furthermore, in the example shown in FIG. 4, the platform 2 on the surface of the target 3 is moved in an arc, and the distance between the substrate 1 and the target 3 can be kept constant, so the same effect as in the example shown in FIG. 2 can be expected. .

〔Effect of the invention〕

According to the sputtering method of the present invention described above, the target component is deposited on the substrate by moving either the target or the substrate so that the incidence of sputtered particles from the target on the substrate is at an angle. Because it was made by

A film with a uniform thickness can be formed regardless of the irregularities of the substrate surface, and since only one target is required, there is no need to increase the size of the vacuum container or the number of attached devices, making it economical and reliable. It can be an excellent sputtering method.

[Brief explanation of the drawing]

FIG. 1 is a schematic diagram of a sputtering apparatus for explaining one embodiment of the sputtering method of the present invention, FIGS. 2, 3, and 4.
The figures are a schematic diagram of a sputtering apparatus for explaining other embodiments of the sputtering method of the present invention, FIG. 5 is a schematic diagram of a magnetron sputtering apparatus, and FIG. 6 is a schematic diagram of a sputtering apparatus for explaining a conventional sputtering method. FIG. 2 is a schematic diagram of the device. DESCRIPTION OF SYMBOLS 1... Substrate, 2... Substrate support stand, 3... Target, 4... Magnetic pole line, 5... Sputtered particle, 6...
permanent magnet.

Claims (1)

[Claims] 1. A target provided with at least a film-forming material and a substrate, which is a base material on which a film is to be formed, are placed facing each other in a vacuum container, and the components of the target are removed by sputtered particles emitted from the target. In a sputtering method for depositing a target component on a substrate, the target component is deposited on the substrate by moving either the target or the substrate so that the incidence of sputtered particles from the target on the substrate is at an angle. A sputtering method characterized by: 2. The sputtering method according to claim 1, wherein the movement of the target is an arc movement with an axis of rotation approximately at the center of the surface of the substrate. 3. The sputtering method according to claim 1, wherein the movement of the target is a rotational movement about a substantially central portion of the target as a rotation axis. 4. The sputtering method according to claim 1, wherein the motion of the substrate is an arcuate motion with an axis of rotation approximately at the center of the surface of the target. 5. The sputtering method according to claim 1, wherein the movement of the substrate is a rotational movement about a substantially central portion of the substrate as a rotation axis.