JP3439993B2 - Magnetron sputtering equipment - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the production of various semiconductor devices, cutting tools, formation of hard films on wear-resistant parts, formation of corrosion-resistant coatings on corrosion-resistant parts, formation of decorative films on crafts and building materials, and plastics. The present invention relates to a thin film forming apparatus for forming a functional film on a lens or a lens, and particularly to a thin film forming apparatus for forming a film which is denser and has better crystallinity than a conventional one at high speed.

[0002]

2. Description of the Related Art In recent years, in coating treatment of hard coatings on cutting tools, wear resistant parts or corrosion resistant parts, it is desired to develop a technique for coating a large number of parts at a lower cost in order to reduce processing cost. ing. Further, when vapor-depositing a wear-resistant coating or a corrosion-resistant coating, a film having higher adhesion, a dense and high hardness is required, and a need for an apparatus capable of forming a highly elementally controlled multi-element film is increasing. ing.

As a method for forming a ceramic hard thin film, an electron beam heating vacuum vapor deposition method or an arc discharge vapor deposition method is often used, but the former is difficult to vapor-deposit a multi-element film,
The latter has a problem that the surface of the film is rough and inhomogeneous because coarse particles called macro particles are taken into the film.

On the other hand, in the sputtering method, ions such as Ar generated by glow discharge are made incident on the target surface, and the target material is repelled by the energy and transferred to the substrate surface. When the reaction product of the target material and the introduced gas is generated on the surface of the base material, it is called a reactive sputtering method and is often used as a film forming apparatus in the field of semiconductors. Further, it is suitable for forming a film containing a plurality of metal elements such as TiAlN and TiCrN (hereinafter referred to as a multi-element film).

However, the sputtering method has a problem that the vapor deposition rate is slower than that of the electron beam heating vacuum vapor deposition method or the arc discharge vapor deposition method, so that the treatment time becomes long and the coating treatment cost becomes high, and it is difficult to form a hard coating film. Was rarely used. However, efforts have also been made to increase the evaporation rate in the sputtering method, and magnetron sputtering in which a magnet is attached to the back surface of the target is currently generally used. For example, JP-A-10-152774, JP-A-10-8246, and JP-A-10-463.
No. 30, JP-A-3-79760, etc., and is used in the manufacturing process of semiconductors and magnetic recording media.

[0006]

However, even with magnetron sputtering, there is still a problem that the average energy of sputtered particles is low, and therefore the adhesion strength of the film to the substrate is low and the film density is low.
Further, there is a problem that the vapor deposition rate is still slower than that of the above two methods. Further, in vapor deposition of a multi-element film, it is difficult to achieve high composition control and high-speed film formation. Further, there is a problem that sputtered particles are scattered in the film forming chamber and maintenance is troublesome.

In view of the above conventional problems, an object of the present invention is to increase the deposition rate based on the magnetron sputtering method, to form a multi-element thin film at high speed, to flexibly control the composition of the film, and Another object of the present invention is to provide a magnetron sputtering apparatus that can easily coat various multi-element thin films at high speed and is easy to maintain.

[0008]

In order to solve such a problem, the inventors of the present invention vaporized a target material by a sputtering method, and examined the number of vaporized atoms and the distribution of kinetic energy. In a normal sputtering phenomenon, an inert gas ion such as argon is incident on the target surface almost vertically, and as a result, multiple collisions between the incident ion and the target atom occur on the target surface, whereby the target atom is repelled from the surface. At that time, it is known that the target atoms fly in a direction in which particles having high energy jump out in a direction oblique to the direction perpendicular to the target surface. As a result of further detailed investigations by the present inventors, as shown in FIG. 1, there are many particles that fly within the angles of 20 ° to 75 ° and 110 ° to 165 ° formed by the substrate to be deposited and the target surface. , Especially 25 ° to 65 ° and 115 ° to 1
It was found that the film thickness becomes thicker in the range of 55 °, and the film in this range is dense and has a high film hardness. Furthermore, the inventors of the present invention can control the film forming rate, thickness, and density of the film by devising the arrangement of the base material and the target surface. It was found that the particles can be stably controlled by arranging them so that they face each other obliquely. Also,
The set of two target electrodes has an N or S pole at the center.
The central magnet that is placed toward the target surface and the central part
Target magnetic poles with opposite polarities to the central magnet on both sides of the magnet.
Peripheral magnets are placed facing the surface and around the target
Of gold in the electrically floating state or ground potential
A metal shield plate is provided, and further, the support base-target plane
Perimeter of a set of target materials projected on a plane orthogonal to the
A wire is wound along the wire to form an electromagnet.
Provide in the direction opposite to the target material side of the target electrode
By doing so, it is possible to change the magnetic field distribution in the deposition chamber.
Control the ion current that is incident on the substrate over a wide range.
I knew that I could do it.

From the above knowledge, in the present invention, in a magnetron sputtering apparatus for evaporating a target material fixed to a target electrode by sputtering to form a film on the surface of a base material, two targets composed of the target electrode and the target material are used. A set of two sets of the target surface intersecting with the target surface and the center axis of the support table on which the base material is placed-
The target and the support are arranged so that a plane connecting the targets (hereinafter referred to as support-target plane) is formed, and the two target material-side surfaces are inclined to the support-target plane, respectively. Then placed in the
Target electrode has N or S pole in the center
A central magnet disposed toward the surface and both of the central magnet
The magnetic pole of the opposite polarity to the center magnet to the target surface.
And a pair of outer peripheral magnets that are placed
The target electrode is a magnet arrangement with a central magnet and an outer magnet
Are the same, and electrically float around the target.
If a metal shield plate that is
Furthermore, it is orthogonal to the plane connecting the support and the target.
On the outer periphery of the set of target materials projected on the surface
The electromagnet with the electric wire wound along the
The above-mentioned problem was solved by providing the gate electrode in the direction opposite to the target material (Claim 1). That is, by arranging the target surface obliquely with respect to the base material, the vapor deposition rate is increased, and sputtered atoms with high energy are incident on the base material, so that a denser film can be obtained.

The central axis of the support base is the rotation axis of the support base on which the base material is placed when the support base is rotatable, and is the geometrical shape of the apparatus when the support base does not rotate. It is the center of gravity or the center of gravity of the placed substrate.

The set of two targets arranged at an angle may be asymmetric with respect to the support-target plane depending on the characteristics such as the evaporation rate of each, but in order to simplify the device configuration, Alternatively, it is desirable to arrange them symmetrically to simplify control (claim 2).

The tilted target can supply a high concentration of particles by setting the angle between the support-target plane and the target surface to be from 25 ° to 65 ° (claim 3).

In the film forming chamber (in the vacuum chamber), the back side and the front side of the substrate are formed toward the pair of targets, and a plurality of pairs of targets are provided in order to reduce the back side, that is, the shaded area as much as possible. Therefore, in claim 4, a set of two targets is provided at two or more places in the film forming chamber where the support is provided. This enables high-speed vapor deposition even on a large substrate.

Further, by attaching a sputter target material having a different composition to each target, a multi-element thin film can be deposited at low cost, and the composition can be highly controlled by appropriately controlling the evaporation rate of each target material. It is also possible to deposit a hard thin film ( Claim 5) .

[0015] Target material not only to vary the composition and of different other sets with one another, may be a composition of two pair of the target material so that different from each other. This makes it possible to obtain a film having a more complicated composition with an inexpensive target (claim 6). Further, the multi-element film can be easily formed at low cost.

[0016]

BEST MODE FOR CARRYING OUT THE INVENTION Next, a first embodiment of the present invention will be described. 2 is a plan view illustrating the structure of the sputtering apparatus, FIG. 3 is a plan view illustrating the arrangement of the base material, the target, and the electromagnet, and FIG. 4 illustrates the structure of the electromagnet of the present invention (a).
Is a plan view, (b) is a side view, and FIG. 5 is an electrical wiring diagram.
As shown in FIG. 2, the magnetron sputtering apparatus 20 is
Vacuum container 1 into which a substrate to be film-formed is inserted to form a film-forming chamber
Is provided with a vacuum container door 11, a base material 2 on which a film is to be formed, and a support base 22 for mounting the base material are provided in the vacuum container,
The support base is rotatable about the central axis 10. The central axis 10 coincides with the central axis of the base material, and the base material is rotated about the central axis. Since there are various base materials 2, when the base material 2 is placed on the support base 22, the axis passing through the center of gravity of the base material 10 is the central axis 10.
It is better to arrange so that Further, the rotation center shaft 10 may be provided on the base material 2 itself without being mounted on the support base 22. Two base material heating heaters (hereinafter, simply referred to as heaters) 3 that spread in the circumferential direction around the central axis 10 are arranged at symmetrical positions, and one heater is fixed to the vacuum container door 11.

[0017] fixed to the target electrode 5 and the target electrode composed of inclined two pair target material 7
Target consisting of 2 symmetrically around the central axis 10
Individually arranged. The target is arranged so that the central axis 10 and the intersection line 7c of the pair of target surfaces 7a and 7b form a support base-target plane 11a.
The target surfaces 7a and 7b are arranged so as to be inclined with respect to the support-target plane 11a at angles α and α ', respectively.

The central axis 1 is the shutter 4 whose plane section is an arc.
It is provided at a symmetrical position with respect to 0, and is rotatably movable so that the target and the base material 2 or the heater 3 and the base material 2 can be isolated from each other.

As shown in FIG . 3, the target electrode 5 has a central magnet (permanent magnet) 6a in which an N pole is oriented toward the target surfaces 7a and 7b in the central portion, and opposite polarities to the central magnets on both sides. Outer peripheral magnets (permanent magnets) 6b, 6b are arranged with their S poles facing toward the target surface.
Further, a metal shield plate 8 in an electrically floating state or a ground potential is provided around the target. Further, an electromagnet 9 is provided on the back surface of the target electrode 5.

As shown in FIG. 4 (a), the electromagnet 9 is arranged behind the target electrode 5 with the vacuum container wall 1a interposed therebetween, and is orthogonal to the support-target plane 11a as shown in FIG. 4 (b). The electric wire 9a is wound around the outer periphery 7d of the set of target materials projected on the surface to be formed, and it is made possible to generate a magnetic field along the support-target plane 11a by passing an electric current. ing.

As shown in FIG . 5, the heater 3 is connected to an AC power supply 31 and is heated by energization to accelerate the degassing rate in the vacuum container 1 and keep the substrate at a predetermined temperature. . Further, a substrate power source 21 for applying a bias voltage to the substrate 2, a heater power source 31 for heating a heater, a target power source 51 for applying a bias voltage to a target, and a current flowing through an electromagnet 9 to generate a magnetic field. A power supply 91 for electromagnets is provided for the purpose.

[0022]

EXAMPLES Reference Example A reference example in which a TiAlN film is coated using the magnetron sputtering apparatus 20 of the present invention.
Show. As shown in FIG. 2, one target material of a titanium plate having a size of 7 cm × 25 cm × 5 mm and one target material of an aluminum plate having the same size were attached to the target electrode 5 as a set, and the target surfaces 7a and 7b were attached. Was set at an angle inclined by 45 degrees with respect to the support base-target plane 11a, and a pair of targets having the same structure was set on the opposite side with the base material 2 interposed therebetween. The substrate 2 has a diameter of 10 cm and a height of 25
A SUS304 cylinder having a diameter of 9.4 cm and an inner diameter of 9.4 cm was used, and the cylinder was placed on the base support 22 having a rotation mechanism. At this time, the rotation speed of the base material was 10 rpm. In addition, this reference
In the example, the electromagnet 9 of the present invention is not used.

The process first the vacuum vessel 1 1 × 10 ^-6 Tor
The temperature of the substrate was raised to 300 ° C. by drawing a vacuum up to r and simultaneously heating the heater 3 electrically. At this time, the two shutters 4 are arranged in front of the two sets of targets, respectively. Then, 50 cc of argon gas is put in the vacuum container.
In order to remove the deposits and reaction products on the target surfaces 7a and 7b by introducing the target at a flow rate of m, each target is -400.
Activated with V, 5A for 10 minutes. After that, shutter 4
Was moved from the target surfaces 7a and 7b to the front surface of the heater 3, and a bias of −450 V was applied to the substrate 2 to perform sputter etching for 20 minutes to activate the substrate surface. Thereafter, nitrogen gas was introduced into the vacuum container, the voltage of the substrate 2 was set to −100 V, and the coating treatment was performed for 1 hour. At this time, the introduction amount of nitrogen gas was suppressed for 20 seconds from the start of coating to evaporate only titanium, thereby forming an adhesive layer of only titanium at the interface between the film and the substrate. After that, the introduction amount of nitrogen gas is 50 s
It gradually increases until it reaches ccm, and the evaporation amount of aluminum is adjusted by adjusting the target current so that the atomic ratio of titanium and aluminum is 1: 1.
Was deposited so that

[0024] After the deposition process, it was examined the film thickness, 5μm
Met. As a result, the film growth rate was 5 μm / h, which was faster than the conventional sputtering method. Further, in the evaluation by the scratch test, the critical load at which acoustic emission appears was 70 N, and the adhesion was sufficiently high in practical use. Furthermore, when the film hardness was measured with a micro Vickers hardness meter, it was 2450 Hv, which was a sufficient hardness as a TiAlN film.

Further, using a magnetron sputtering apparatus 30 of the prior art scheme shown in Figure 8, it was deposited in the TiAlN film with even more also has the same base material 2. At this time, the target material 37 fixed to the target electrode 35 was made to have a ratio of Ti to Al of 1: 1 and 14 cm.
Two x25 cm x 5 mm plates were arranged symmetrically. Using this, a TiAlN film was similarly deposited for 1 hour. However, since the film composition cannot be graded in the comparative device in principle, the film is a TiAlN film without a grade. In the measurement after vapor deposition, the film thickness was 3 μm. Therefore, the deposition rate was 3.mu. m / h, compared deposition rate was slow in the apparatus of the present embodiment. In the scratch test, the critical load is 50.
It was N, and the adhesion strength was lower than that of the device of the present invention having the graded composition layer. In addition, the film hardness is 2100H v
It was.

As described above, in this reference example, it was possible to continuously change from the Ti film, which is the adhesive layer, to the TiAlN film, so that a film having high adhesion could be formed. Moreover, by inclining the target, a dense and high-hardness film could be obtained at high speed.

[0027] The first embodiment (Embodiment 1) of the present invention will now be described. In the first embodiment, an aluminum material was coated with a CrN film using the magnetron sputtering apparatus 20 'of the present invention shown in FIG. In the reference example , the base material was cylindrical, but in the first embodiment, as shown in FIG. 6, the base material 2 has a rectangular parallelepiped shape, the target materials 7 are all the same, and the mounting angle is Is α = α ′ = 6
The only difference is that it is 0 degree and that the electromagnet 9 of the present invention is used. In FIG. 6, 7 cm × 25 cm × 5 m for all two sets of targets
The surface of each target 7a, 7
They were placed so that b was inclined at 60 degrees with respect to the support base-target plane 11a, and they were placed on the opposite side with the base material sandwiched therebetween as shown in FIG. The size of the base material 2 is vertical 2.
The substrate was 5 cm, 15 cm wide, and 5 cm thick, and was placed on the base support 22 as shown in FIG. 6, and the base was not rotated. In addition, the electromagnet current was passed through the electromagnet 9 installed outside the target in the direction in which the base current increased.

The treatment is carried out by first evacuating the vacuum vessel 1 to 1 × 10 ^-6 Torr with the two shutters 4 arranged in front of the two sets of targets, respectively, and simultaneously heating the heater 3 by heating. The temperature of material 2 was raised to 200 ° C. In the following, the steps before vapor deposition were performed in the same procedure as in Example 1, and the steps up to sputter etching were performed. At this time, the electromagnet current was kept constant at 7 A, and the substrate current was about 2 A. Then, nitrogen gas was introduced into the vacuum container 1 to reduce the substrate voltage to −.
The coating treatment was performed at 120 V for 2 hours. At this time, the introduction amount of nitrogen gas was suppressed for 20 seconds from the start of coating, and thereafter, the introduction amount was gradually increased to a predetermined 50 ccm. As a result, an adhesive layer containing only chromium was formed at the interface between the film and the substrate.

[0029] After the deposition process, it was examined the film thickness, 15μ
It was m. From this, the film growth rate was 7.5 μm / h. Also, in the scratch test evaluation, CrN
The critical load of the film was about 60 N, which was a sufficiently high bond strength. Further, the film hardness measured by the micro Vickers hardness meter was 2000 Hv, and a dense and hard film containing a large amount of CrN component was formed.

For comparison, a CrN film was deposited by using the conventional magnetron sputtering apparatus 30 shown in FIG. At this time, the target is 14 cm ×
Two 25 cm × 5 mm chrome plates were used. Using this magnetron sputtering apparatus, a CrN film was vapor-deposited for 2 hours as described above. In the measurement after vapor deposition, the film thickness was 8 μm. Therefore, the deposition rate was 4 [mu] m / h, compared deposition rate was slow in the apparatus of the present invention. The critical load by the scratch test was 60N. Further, the film hardness was 1800 Hv, which was a film containing a large amount of Cr ₂ N component, and the hardness was lower than that of the present invention. In the inclined target type magnetron sputtering apparatus of the present invention, the plasma intensity in the vicinity of the base material is strong, and chromium atoms having high energy are incident on the surface of the base material. Therefore, it is considered that the present invention has higher hardness.

As described above, it was found that the apparatus of the present invention can synthesize a CrN film having a good film quality at a high speed and can sufficiently cover a CrN film which requires a thick film. Further, by inclining the target, it was possible to obtain a dense and high-hardness film.

[0032] (Example 2) In addition, a description is given of a second embodiment. In the second embodiment, Ti is used by using the magnetron sputtering apparatus 20 ″ of the present invention shown in FIG.
An AlN film was coated. In FIG. 7, 7 cm ×
A target to which a titanium plate of 25 cm × 5 mm is attached and a target to which an aluminum plate of the same size is attached are prepared, and the surfaces 7a and 7b of each target are inclined by α = α ′ = 50 degrees with respect to the support-target plane 11a. One set was installed at different angles, and three sets of targets having the same configuration were installed as shown in FIG. The support base 22 is a 4-axis auto-revolution type, and has a diameter of 8 cm and a height of 2 cm.
A 0 cm SKD51 round bar 2 was placed. The rotation speed of the support base 22 during the coating process was 6 rpm, and each base material 2 was supported by
Each rotation was rotated 15 degrees. The same components as those described above are designated by the same reference numerals and the description thereof will be omitted. However, three shutters 4 are arranged concentrically and on different circles, and when the target and the base material 2 are shut off, one shutter moves between the target and the base material and shuts off the heater 3 and the base material. When doing so, the shutters are made to overlap each other so that the target and the substrate are not blocked.

As shown in FIG . 7, first, three shutters 4 are placed in front of three sets of targets, the vacuum container 1 is evacuated to 1 × 10 ^-6 Torr, and at the same time, the heater 3 is electrically heated. Then, the temperature of the substrate 2 was raised to 300 ° C. After that, TiAlN was formed by the same procedure as in Example 1.
Film deposition was performed. However, at this time, the current of the electromagnet 9 is 7
The current of the base material 2 was adjusted to 3 A while keeping A constant. The vapor deposition treatment was performed for 40 minutes, and after cooling, the film formation rate, the adhesion strength, and the film hardness were examined using a test piece made of SKD51 that was put in at the same time as the base material 2. As a result, the film growth rate was 7 μm / h, which was sufficiently higher than that of the conventional sputtering method. Also, the adhesion strength, that is, the critical load in the scratch test is 7
It was 0 N, and the adhesion was sufficiently high in practical use. The film hardness was 2400 Hv, which was a sufficient hardness for the TiAlN film.

As described above, in the apparatus of the present invention, it was possible to continuously change from the Ti film, which is the adhesive layer, to the TiAlN film, and therefore a film having high adhesion could be formed. Further, by using three targets, it was possible to obtain a denser film having a higher hardness at a higher speed.

[0035]

According to the present invention, the target electrode of the magnetron sputtering apparatus and the target composed of the target material are set as a set of two, and the surfaces of the two targets are arranged so as to be inclined with respect to the support-target plane. since the incident particles with high energy in the direction of the wood in a large amount, the deposition rate becomes faster, and because high sputtering atoms energy is incident to the substrate, is composition control, such as the gradient composition film multielement thin Vapor deposition has become easy, and a dense film with high adhesion strength can be vapor deposited at high speed and in a short time. Also, a set of two targets
Electrode with N or S pole facing the target surface in the center
Central magnets placed and central magnets on both sides of the central magnet
Was placed with the magnetic pole of the opposite polarity to the target surface
An outer magnet is used as a magnet to electrically float around the target.
A metal shield plate in a swinging state or ground potential,
In addition, the support-projected onto a plane orthogonal to the target plane.
Wire around the perimeter of a set of target materials
To form an electromagnet, which is used as a counter electrode for a pair of target electrodes.
Since it is installed in the target material side direction,
Ion current that changes the magnetic field distribution in the film chamber and makes it incident on the substrate
The magnetrons can be controlled over a wide range.
The base material is the plasma region generated near the putter target.
Can be spread in the opposite direction, which allows incident ions to enter the substrate.
Control the number of films and improve the film quality and the deposition rate.
You can In addition, the plastic generated near the target
The Zuma area can be extended close to the substrate, thus
Since the adjustment range of the substrate current can be expanded, the film quality
Control is also easier.

Further, the set of two inclined targets are symmetrically arranged with respect to the support-target plane, and the structure and control can be simplified, so that production and control are easy.

Further, since a high concentration of particles can be supplied by setting the angle between the support base-target plane and the target surface to 25 ° to 65 °, the deposition rate is faster and a dense multi-element thin film can be obtained. Can be provided.

[0038] Further, a set of two targets, as provided in two or more places of the support film formation chamber provided, but may be deposited at a high speed even for large substrates, a large amount at a time Deposition is also possible on the base material, making it suitable for mass production.

Further , since the sputter target material having a different composition is attached to each target, or the composition of the target material of one set of two sheets is made different from each other, the target is made of an inexpensive material without using an expensive alloy material. Since the composition of the film can be freely controlled by adjusting the evaporation amount of each target, the composition of the film can be freely controlled, so that a gradient composition film or a multilayer film having high adhesion strength can be easily formed. It was

As described above, the inclined target type magnetron sputtering apparatus of the present invention has various advantages as compared with the conventional magnetron sputtering apparatus, and is very useful in industry.

[Brief description of drawings]

FIG. 1 is an angular distribution diagram of vaporized atoms in a sputtering phenomenon, where (a) is an angular distribution diagram of a flight direction (degrees) of sputtered particles and a Ti deposition rate (Å / sec) on a substrate, (b).
FIG. 4 is an explanatory view showing an angle of a sputtered particle from a target surface in a flight direction.

FIG. 2 is a plan view illustrating the configuration of the magnetron sputtering apparatus showing the embodiment of the present invention.

FIG. 3 is a plan view illustrating the arrangement of a base material, a target (target electrode, target material), and an electromagnet.

FIG. 4A is a plan view showing the configuration of an electromagnet of the present invention,
(B) is a side view.

5 is an electrical wiring diagram showing an example of electrical wiring of the device shown in FIG.

FIG. 6 is a plan view illustrating the configuration of a magnetron sputtering apparatus used in Example 2 of the present invention.

FIG. 7 is a plan view illustrating the configuration of a magnetron sputtering apparatus used in Example 3 of the present invention.

FIG. 8 is a plan view illustrating a configuration of a conventional magnetron sputtering apparatus.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Vacuum container (film forming chamber) 2 Base material 3 Heater (heater) for heating base material 4 Shutter 5 Target electrode 6a Central magnet (permanent magnet) 6b Peripheral magnet (permanent magnet) 7 Target material 7a, 7b Target surface 7c Intersection line 7d of target surface 8 Perimeter of one set of target material 8 Metal shield plate 9 Electromagnet 9a Electric wire 10 Center axis 11a Plane connecting support base and target (support base-target plane) 20, 20 ', 20 "Magnetron sputtering device 22 Support

─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Tsuneki Sato 1-1-1, Fujikoshi Honcho, Toyama City, Toyama Prefecture Fujikoshi Co., Ltd. (56) Reference JP-A-6-17248 (JP, A) JP-A-5 -78831 (JP, A) JP 57-78123 (JP, A) JP 63-61387 (JP, B1) JP 3-2228 (JP, B2) JP 63-25068 (JP, B1) ) (58) Fields investigated (Int.Cl. ⁷ , DB name) C23C 14/34 B23P 15/28 C23C 14/35 H01L 21/203

Claims (6)

(57) [Claims] 1. In a magnetron sputtering apparatus for evaporating a target material fixed to a target electrode by sputtering to form a film on a surface of a base material, two targets each consisting of the target electrode and the target material are set, The target and the support are arranged so that a plane connecting the support and the target is formed by the intersection line of the target surfaces of the sheets and the central axis of the support on which the base material is placed,
The two surfaces of the target material side are respectively arranged to be inclined to the plane side connecting the support base and the target ,
Target electrode has N or S pole in the center
A central magnet disposed toward the surface and both of the central magnet
The magnetic pole of the opposite polarity to the center magnet to the target surface.
And a pair of outer peripheral magnets that are placed
The target electrode is a magnet arrangement with a central magnet and an outer magnet
Are the same, and electrically float around the target.
If a metal shield plate that is
Furthermore, it is orthogonal to the plane connecting the support and the target.
On the outer periphery of the set of target materials projected on the surface
The electromagnet with the electric wire wound along the
Magnetron sputtering apparatus, characterized in that is provided, et al is the counter-target material side direction of the gate electrode. 2. The magnetron sputter according to claim 1, wherein the set of two targets arranged at an angle is symmetrically arranged with respect to a plane connecting the support base and the target. apparatus. 3. The tilted targets are:
3. The magnetron sputtering apparatus according to claim 1, wherein an angle formed by a plane connecting the support base and the target and a surface of the target is 25 [deg.] To 65 [deg.]. 4. The magnetron sputtering apparatus according to claim 1, wherein the pair of targets is provided at two or more places in a film forming chamber where the support is provided. . 5. The magnetron sputtering apparatus according to claim 1, wherein two or more kinds of target materials having different compositions are attached to the target. 6. The magnetron sputtering apparatus according to claim 5, wherein the compositions of the target materials of the pair of two sheets are different from each other.