JP3038288B2 - Thick film making equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thick film forming apparatus for forming a thick film on a surface of a substrate provided in a vacuum.

[0002]

2. Description of the Related Art A conventional thick film forming apparatus is shown in FIG. 3, in which two electron beam evaporation sources 2 are arranged in parallel in a lower portion in a vacuum chamber 1. A substrate rotating mechanism 4 for mounting and rotating the substrate 3 is provided in the upper portion of the vacuum chamber 1, and a substrate heating mechanism 5 is provided behind the substrate 3. In the drawing, 6 is a shutter, 7 is a film thickness monitor, 8 is a film thickness monitoring shutter, and 9 is a power supply for an electron beam evaporation source.

In such a conventional thick film forming apparatus, at least one of the two electron beam evaporation sources 2 is used to evaporate a raw material metal or the like, and the deposition rate is stabilized by a film thickness monitor 7. Make sure that you do. After that, the shutter 6 is opened, metal or the like is deposited on the surface of the substrate 3, and a thick film is formed thereon. At that time, the film thickness and the composition ratio are adjusted by rotating the substrate 3 by the substrate rotating mechanism 4.

[0004]

As described above, the conventional thick film forming apparatus employs at least one of the two electron beam evaporation sources 2 to evaporate a metal or the like as a raw material. A thick film is formed on the surface of the. However, the adhesion between the substrate 3 and the thick film is poor, the internal stress between the substrate 3 and the thick film is large, and the substrate 3 is easily peeled off.
There have been problems such as that contact resistance easily occurs between the substrate 3 and the thick film.

SUMMARY OF THE INVENTION An object of the present invention is to solve the conventional problems, to provide a good adhesion between a substrate and a thick film, to reduce internal stress and prevent peeling, and to reduce a contact resistance. Is provided.

[0006]

According to the present invention, there is provided a thick film forming apparatus for forming a thick film on a surface of a substrate disposed in a vacuum chamber. An electron beam evaporation source for depositing an electron beam on the surface, a high-vacuum high-speed plasma sputtering source for attaching sputter particles to the surface of the substrate, and a substrate rotation mechanism for mounting and rotating the substrate, While rotating the substrate, the sputter particles from the high-vacuum high-speed plasma sputtering source adhere to the surface of the substrate, and the electron beam evaporation source evaporates the raw materials such as metal to form a thick film on the surface of the substrate. It is characterized by having comprised.

[0007]

According to the present invention, sputter particles from a high-vacuum high-speed plasma sputtering source are attached to the surface of a substrate, and a material such as metal is evaporated by an electron beam evaporation source to form a thick film on the surface of the substrate. . At this time, the substrate is rotated by the substrate rotation mechanism.

[0008]

Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows a thick film forming apparatus according to an embodiment of the present invention.
An electron beam evaporation source 22 and a high-vacuum high-speed plasma sputtering source 23 are arranged in parallel in a lower part of the inside 1. In the electron beam evaporation source 22, a material such as a metal is evaporated by an electron beam. The sputtered particles are made to fly out of the high-vacuum high-speed plasma sputtering source 23. Vacuum chamber 21
A substrate rotating mechanism 25 on which a substrate 24 is placed is disposed in the upper part of the inside, and a substrate heating mechanism 26 is disposed behind the substrate 24. A shutter 27 is provided in front of the high-vacuum high-speed plasma sputtering source 23. In the drawing, reference numeral 22a denotes a power supply for an electron beam evaporation source, 28 denotes a film thickness monitor, and 29 denotes a film thickness monitoring shutter.

FIG. 2 shows a high vacuum high speed plasma sputtering source 23.
In the figure, a cathode 31 is attached to the lower part of the vacuum case 30 and the cathode 3
A target 32 is mounted on 1. A helical coil 33 is provided in the vacuum case 30, and the center axis of the helical coil 33 is orthogonal to the surface of the target 32. A high frequency oscillation source 34 is connected to the helical coil 33. In FIG. 2, 35 is an electromagnet, 36 is a high frequency power supply, and 37 is a permanent magnet.

In such an embodiment, while rotating the substrate 24 heated by the substrate heating mechanism 26 by the substrate rotating mechanism 25,
The helical coil 33 generates high-density plasma in the high-vacuum high-speed plasma sputtering source 23, sputters the target 32 with ions in the high-density plasma, and attaches sputtered particles to the substrate 24. Next, a material such as metal is evaporated by an electron beam from the electron beam evaporation source 22,
A thick film is formed on the surface of the substrate 24.

At the same time that the sputtered particles are attached to the substrate 24, a raw material such as a metal may be evaporated by an electron beam from the electron beam evaporation source 22 to form a thick film on the surface of the substrate 24.

[0012]

According to the present invention, sputter particles from a high-vacuum high-speed plasma sputtering source are attached to the surface of a substrate while the substrate is rotated by a substrate rotating mechanism, and a material such as metal is evaporated by an electron beam evaporation source. Because a thick film is created on the surface of the substrate, the adhesion between the substrate and the thick film is good,
This has the effect of reducing internal stress and preventing peeling, thereby reducing contact resistance.

[Brief description of the drawings]

FIG. 1 is an explanatory diagram of an embodiment of the present invention.

FIG. 2 is an explanatory diagram showing details of a high-vacuum high-speed plasma sputtering source used in an embodiment of the present invention.

FIG. 3 is an explanatory view showing a conventional thick film forming apparatus.

[Explanation of symbols]

 21 Vacuum chamber 22 Electron beam evaporation source 23 High vacuum high-speed plasma sputtering source 24 Substrate 25 ··· Substrate rotating mechanism 26 ···· Substrate heating mechanism 27 ···· Shutter 28 ····· Thickness monitor 29 ······ Thickness monitor shutter 30 Vacuum case 31 Cathode Target 33 Helical coil 34 High-frequency oscillation source 35・ ・ ・ ・ ・ ・ ・ Electromagnet 36 ・ ・ ・ ・ ・ ・ High frequency power supply 37 ・ ・ ・ ・ ・ ・ ・ Permanent magnet

Continuation of front page (56) References JP-A-64-36763 (JP, A) JP-A-61-190070 (JP, A) JP-A-4-350156 (JP, A) (58) Fields investigated (Int) .Cl. ⁷ , DB name) C23C 14/00-14/58

Claims (2)

(57) [Claims] 1. A thick film forming apparatus for forming a thick film on a surface of a substrate disposed in a vacuum chamber, comprising: an electron beam evaporation source for depositing a material such as a metal on the surface of the substrate by an electron beam; A high-vacuum high-speed plasma sputtering source for depositing sputter particles on the substrate, and a substrate rotating mechanism for mounting and rotating the substrate, and rotating the substrate by the substrate rotating mechanism while sputtering from the high-vacuum high-speed plasma sputtering source. A thick film forming apparatus comprising: attaching particles to a surface of a substrate; and evaporating a material such as a metal with an electron beam evaporation source to form a thick film on the surface of the substrate. 2. A high-vacuum high-speed plasma sputtering source includes a helical coil arranged so that a central axis is orthogonal to a surface of a target attached to a cathode, and a high-frequency oscillation source connected to the helical coil. 2. The thick film forming apparatus according to claim 1, wherein the target is configured to sputter a target with ions.