JPH04116160A - Film forming device - Google Patents

Abstract

PURPOSE:To allow the formation of a large-area film with a small-sized target and the change of the thickness of the film on a substrate by moving the target which is provided to face the substrate and is smaller in area than the substrate relatively to the substrate. CONSTITUTION:The target 15 which faces the substrate 3 and is smaller in the area of the part facing the substrate than the substrate 3 is provided in a vacuum chamber 1. The above-mentioned substrate 3 and the target 15 are moved relatively by using a means 9 for relatively moving the substrate 3 and the target 15 while maintaining the distance between the substrate and the target at a specified distance. A glow discharge is generated between the above-mentioned substrate 3 and the target 15 to form a vapor deposited film on the substrate 3. An arbitrary film thickness distribution is formed on the substrate 3 by controlling the moving speed of the means 9 at this time.

Description

[Detailed Description of the Invention] [Industrial Field of Application] The present invention relates to an apparatus for forming a film by sputtering vapor deposition, and is applicable to electronic components (printed circuit boards, semiconductors, etc.), optical components, sensors,! It can be widely applied to the production of FF recording media, superconducting parts, etc., surface modification, and the creation of new materials.

[Conventional technology]

Sputtering and vacuum deposition are widely used as typical physical vapor deposition methods. Compared to vacuum evaporation, Suba Tsutaring has stronger film quality, it is easier to create thin films with complex compositions such as compounds and alloys, it forms films uniformly even on uneven surfaces, and it is easier to control film thickness. Due to its many advantages, it has recently become the go-to technique for physical dressing.

The principle of this sputtering method will be explained next.

In the sputtering method, a substrate (object to be evaporated) and a target (substance deposited) are opposed to each other at a predetermined distance (usually about 20 to 60 M) in an argon gas atmosphere of 10-2 to 1 O-3 Torr, and a gap between the substrate and the target is formed. Direct current (in the case of a conductive target such as metal) or high frequency (applicable to both conductive and non-conductive targets) is applied to generate a glow discharge between the two. Then, the argon ions (Ar') generated thereby collide with the target. At this time, atomic fine particles of the target are ejected from the target surface by the sputtering action, and these particles collide and deposit on the substrate to form a film.

FIG. 2 is a diagram showing an example of a conventional film forming apparatus using a sputtering method. Inside the vacuum chamber (1), 1
The argon gas partial pressure is maintained at 0-2 to 1 O-3 Torr. A substrate (3) is fixed therein by a substrate support device (6) and cooled by a water cooling jacket (2). A target (5) is fixed by a target support device (7) facing the substrate. Power supply and control equipment (8
) when a direct current or high frequency is applied between the substrate (3) and the target (5), a glow discharge occurs and the substrate (
3) A film (4) is formed on top. Note that when direct current is applied, the substrate (3) is used as an anode and the target (5) is used as a cathode.

In conventional sputtering vapor deposition, in order to form a film on the entire surface of the substrate (3), the target (5) and the substrate (3) have the same dimensions (shape and area of opposing parts). In other words, since the film is formed only on the area on the substrate (3) corresponding to the size of the target (5),
), except when forming a film only on a limited area on the substrate (3) and the target (5), keep the substrate (3) and the target (5) the same size, and make sure that the substrate (3) and the target (5) are not misaligned.
5) were placed exactly opposite each other.

The substrate (3) is bombarded with target particles during deposition.

Deposition increases temperature. Therefore, there is a risk that the film may be deformed due to thermal expansion or that the deposition state may change and the film quality may change. Therefore, it is usually cooled by a water cooling jacket method. The water cooling jacket (2) is designed to be able to accommodate various sizes of substrates for general purposes.

On the other hand, the temperature of the target material (5) also increases due to collisions with argon ions, and there is a risk that it may be deformed or cracked due to thermal expansion. To prevent this, it is necessary to back it up with metal. The target and bank-up metal are usually joined by brazing or the like.

[Problems to be Solved by the Invention] In conventional film forming apparatuses, backup metal is joined to the target by brazing or the like, so the target is expensive, and although it depends on the material, it has a disk shape with a diameter of 50 m + n. First of all, it is expensive at 300,000 to 500,000 yen. Moreover, since the target is a consumable item, sputtering costs more materials than vacuum evaporation.

Furthermore, since it is difficult to manufacture large targets, thin deposition by sputtering limits the substrate size.

Furthermore, the thickness of the coating cannot be varied on the substrate. That is, since it is possible to form only a film with a uniform thickness, it is not suitable for applications where the thickness of the film must be varied on the substrate.

The present invention solves the above-mentioned conventional problems, makes it possible to form a film over a large area with a small target, and allows the thickness of the film to be changed on the substrate, further reducing the cost of the target. The purpose is to provide equipment.

[Means to solve the problem]

In order to achieve the above-mentioned object, the present invention provides a target that is provided opposite to a substrate and has a smaller area of the opposing portion than the substrate; The present invention proposes a film forming apparatus characterized by comprising means for relatively moving the target; and means for causing glow discharge between the substrate and the target.

[Effect]

In the present invention, the dimensions of the target are made smaller than those of the substrate, and the target is moved while the substrate is fixed, the target is fixed and the substrate is moved, or the substrate and target are moved simultaneously. Either method allows for uniform deposition on the substrate by moving the substrate and target relative to each other and generating glow discharge uniformly between the target and the substrate over the entire surface of the substrate (the side to be deposited). Form a film. Further, by controlling the speed and trajectory (direction) of movement, it is possible to create an arbitrary film thickness distribution on the substrate.

〔Example〕

FIG. 1 is a diagram showing an embodiment of the present invention. In this figure, in order to avoid redundancy, the same reference numerals are given to the same parts as those of the conventional device explained with reference to FIG. 2, and detailed explanation thereof will be omitted.

In this example, the target node 05) is the substrate (3).
It is smaller in size and is moved opposite the substrate by a drive device (9). The rest of the structure is the same as the conventional one explained with reference to FIG. 2 above.

In such a device, when a glow discharge is generated between the substrate (3) and the smaller target 09,
A target material is deposited on the substrate (3) in an area facing the target 05). At this time, if the target 0ω is moved while maintaining a constant distance from the substrate (3), the vapor deposition will be performed uniformly over the entire surface of the substrate (3) (the side facing the target) and a film will be formed. . According to this embodiment, since the target θ can be made smaller than in the conventional case, the cost is reduced.

In the above embodiment, the target 05) was moved relative to the fixed substrate (3), but even if the target is fixed and the substrate is moved, the same effect as described above will cause the entire surface of the substrate to be covered. A film is formed.

Further, even if the substrate and target are moved simultaneously, a film is similarly formed over the entire surface of the substrate.

There are various methods for relatively moving the substrate and target, such as parallel movement, rotation, and zigzag movement, but the key to making the thickness of the stem-attached film uniform is to move them evenly without overlapping. Conversely, by controlling the speed and trajectory (direction) of movement, the thickness of the skin IQ formed on the substrate can be adjusted to a predetermined value at a predetermined position on the substrate. .

〔Effect of the invention〕

According to the present invention, the following effects can be obtained.

■ Target cost can be reduced by using a target node that is smaller than the substrate.

■ Capable of forming a film on a large area with a small target.

■ The thickness of the film can be changed on the substrate.

[Brief explanation of drawings]

FIG. 1 is a diagram showing an embodiment of the present invention, and FIG. 2 is a diagram showing an example of a conventional film forming apparatus using a sputtering method. 1 Vacuum chamber 3...Substrate. 5...Target (fixed) 7...Target support device B...Power source and control device 9...Target drive device 15...Target (movable). 2... Water cooling jacket 9 4... Film. 6...Substrate support device (Fig. 1) Agent: Patent attorney Akatsuki Itama (2 others) Fig. 2

Claims (1)

[Claims] a target provided opposite to the substrate, the area of the opposing portion being smaller than the substrate; means for relatively moving the substrate and the target while maintaining a constant distance between the substrate and the target; and the substrate. A film forming apparatus characterized by comprising means for causing glow discharge between the target and the target.