JPH048506B2 - - Google Patents
Info
- Publication number
- JPH048506B2 JPH048506B2 JP58124862A JP12486283A JPH048506B2 JP H048506 B2 JPH048506 B2 JP H048506B2 JP 58124862 A JP58124862 A JP 58124862A JP 12486283 A JP12486283 A JP 12486283A JP H048506 B2 JPH048506 B2 JP H048506B2
- Authority
- JP
- Japan
- Prior art keywords
- target
- thin film
- evaporation source
- substrate
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000001704 evaporation Methods 0.000 claims description 27
- 239000010409 thin film Substances 0.000 claims description 27
- 230000008020 evaporation Effects 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 21
- 239000000126 substance Substances 0.000 claims description 13
- 239000000470 constituent Substances 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 7
- 238000007740 vapor deposition Methods 0.000 description 7
- 239000010408 film Substances 0.000 description 6
- 229910052785 arsenic Inorganic materials 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000007738 vacuum evaporation Methods 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000005478 sputtering type Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は、真空槽内に配置した基板の面上に、
スパツタリング法による薄膜形成と真空蒸着法に
よる薄膜形成とを同時に、もしくは交互に施すこ
とにより、不純物原子を含む薄膜あるいは合金か
ら成る薄膜を、安価に形成させることを可能とし
た薄膜形成装置に関するもので、例えば、半導体
素子の製作に適用される。[Detailed Description of the Invention] [Field of Application of the Invention] The present invention provides the following technology:
This invention relates to a thin film forming device that can form thin films containing impurity atoms or thin films made of alloys at low cost by simultaneously or alternately forming thin films by sputtering and vacuum evaporation. , for example, is applied to the production of semiconductor devices.
近年、発展の著しい半導体素子の製作に、スパ
ツタリング法を用いる場合が急激に増大してい
る。従来、この種のスパツタリング装置は、第１
図に示す構成をしている。真空槽１１内の、陰極
もしくは高周波電極となる電極１２上にターゲツ
ト１３を設置し、ターゲツト１３と電極１２との
周辺部に電極シールド１４が設けてあり、ターゲ
ツト１３の前方に基板支持台１５が置かれてい
る。基板支持台１５上に基板１６を設置した後、
真空槽１１を排気し、Ar等の不活性ガスと、O2
やN2等の活性ガスとを所定量導入し、電極１２
に負電圧もしくは高周波電圧を印加すると、グロ
ー放電が起こり、高エネルギイオンが生成され、
これがターゲツト１３の表面に衝突する。この結
果、ターゲツト構成原子がたたき出され、ターゲ
ツト構成原子を主成分とする薄膜が基板１６上に
形成される。スパツタリング法は、上記原理に基
づくために、ターゲツトの組成と、形成される薄
膜の組成との差異を著しく小さく抑えることがで
きる利点を有する。このために、半導体素子にお
いて多用される薄膜、例えば、数％のSiやCuを
含むAl薄膜、の形成には不可欠な薄膜形成方法
となつている。しかし、半導体素子では、Ｐある
いはAsを含む多結晶Si膜も一般に用いられてい
る。この場合、スパツタリング法によるターゲツ
トを、これらの不純物を多量に添加させて形成す
ることは極めて困難である。この理由は、Ｐある
いはAsの蒸気圧が、Siのそれに比べて極めて高
いためである。このことから、通常の半導体素子
の製作には、気相成長法が用いられている。しか
し、この気相成長法には、高温度処理を必要とし
たり、有害、危険ガスを使用しなければならない
という問題点がある。
In recent years, the use of sputtering methods has rapidly increased in the production of semiconductor devices, which are undergoing rapid development. Conventionally, this type of sputtering equipment has a first
It has the configuration shown in the figure. A target 13 is placed on an electrode 12 that serves as a cathode or a high-frequency electrode in a vacuum chamber 11, an electrode shield 14 is provided around the target 13 and the electrode 12, and a substrate support 15 is placed in front of the target 13. It has been placed. After installing the substrate 16 on the substrate support stand 15,
Vacuum chamber 11 is evacuated and inert gas such as Ar and O 2
A predetermined amount of active gas such as or N 2 is introduced into the electrode 12.
When a negative voltage or high frequency voltage is applied to the
This impinges on the surface of the target 13. As a result, the target constituent atoms are knocked out, and a thin film containing the target constituent atoms as a main component is formed on the substrate 16. Since the sputtering method is based on the above principle, it has the advantage that the difference between the composition of the target and the composition of the formed thin film can be kept extremely small. For this reason, it has become an indispensable thin film forming method for forming thin films often used in semiconductor devices, such as Al thin films containing several percent of Si or Cu. However, polycrystalline Si films containing P or As are also commonly used in semiconductor devices. In this case, it is extremely difficult to form a target using a sputtering method by adding a large amount of these impurities. The reason for this is that the vapor pressure of P or As is extremely high compared to that of Si. For this reason, the vapor phase growth method is commonly used to manufacture semiconductor devices. However, this vapor phase growth method has problems in that it requires high temperature treatment and requires the use of harmful and dangerous gases.
一方、二成分以上から成るターゲツトの形成が
困難な場合の対策として、第２図に示すスパツタ
リング法も開発され、広く用いられている。即
ち、電極を２個２１，２２とし、その上に異なる
性質のターゲツト２３，２４を設置し、グロー放
電を開始して、基板支持台２５上に置いた基板２
６上に薄膜を形成する。この際、電極２１，２２
に投入する電力を制御し、ならびに基板支持台２
５に運動を付与することにより、ターゲツト２３
と２４から成る組成の膜を形成でき、さらに、そ
の組成を制御できることになる。しかしながら、
前述のＰやAsのように極めて蒸気圧の高い物質
から成るターゲツトを作ることは困難であるか、
製作に高価格を要することから、第２図に示す装
置を用いても、ＰやAs等の蒸気圧の高い物質を
多量に含む膜を安価に形成することは難しい。 On the other hand, as a countermeasure for cases where it is difficult to form a target composed of two or more components, a sputtering method shown in FIG. 2 has also been developed and is widely used. That is, two electrodes 21 and 22 are provided, targets 23 and 24 with different properties are placed thereon, glow discharge is started, and the substrate 2 placed on the substrate support 25 is heated.
A thin film is formed on 6. At this time, the electrodes 21, 22
control the power input to the substrate support stand 2.
By imparting motion to 5, the target 23
It is possible to form a film having a composition consisting of and 24, and furthermore, the composition can be controlled. however,
Is it difficult to create targets made of substances with extremely high vapor pressure, such as the aforementioned P and As?
Since manufacturing costs are high, it is difficult to inexpensively form a film containing a large amount of a substance with high vapor pressure, such as P or As, even if the apparatus shown in FIG. 2 is used.
以上述べたように、従来のスパツタリング方法
及び装置においては、性質の著しく異なる物質か
ら成る薄膜を形成することは困難であり、スパツ
タリング法の長所を無視して、他の方法に頼らざ
るを得ないという問題があつた。 As mentioned above, with conventional sputtering methods and equipment, it is difficult to form thin films made of materials with significantly different properties, and the advantages of sputtering methods must be ignored and other methods resorted to. There was a problem.
本発明の目的は、従来方法及び装置における上
述の問題点を解決し、不純物を含む薄膜もしくは
合金から成る薄膜をも安価に得ることのできる薄
膜形成装置を提供することにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a thin film forming apparatus that solves the above-mentioned problems of conventional methods and apparatuses and that can produce thin films containing impurities or thin films made of alloys at low cost.
本発明の特徴は、スパツタリング装置のスパツ
タターゲツトの設置されている真空槽に、このタ
ーゲツト構成素子とは異なる蒸着物質を入れた蒸
発源を、真空槽に対して電気的に浮遊状態（蒸発
源と真空槽とは絶縁されている）にして設置し、
この蒸着物質を加熱蒸発することで、ターゲツト
構成原子と蒸着物質構成原子から成る薄膜を基板
面上に形成する薄膜形成装置とすることにある。
A feature of the present invention is that an evaporation source containing an evaporation material different from that of the target component is placed in an electrically floating state (evaporation source (insulated from the vacuum chamber),
The object of the present invention is to provide a thin film forming apparatus that forms a thin film consisting of target constituent atoms and vapor deposited substance constituent atoms on a substrate surface by heating and evaporating the vapor deposition substance.
第３図は、本発明を実施するための装置構成図
である。第３図において、３１は真空槽、３２は
陰極電極もしくは高周波電極となる電極、３３は
電極シールド、３５は基板支持台、３６はターゲ
ツト、３７は蒸着物質、３８は基板、３９，３
９′はシヤツタである。所定の物質から成るター
ゲツト３６ならびに蒸着物質３７をシヤツタ３９
を介して基板３８に対向させて設置した後、真空
槽３１を一度排気し、Ar等の不活性ガス、O2や
N2の活性ガスを混合したガスを所定量導入し、
電極３２に負電圧もしくは高周波電圧を印加する
と放電が開始される。これと同時に蒸発源３４に
入れた蒸着物質３７を、蒸発源３４に備えた加熱
装置により加熱蒸発させる。上述の工程を経た
後、シヤツタ３９，３９′を取り去ると、基板３
８には、ターゲツト３６構成原子ならびに蒸着物
質３７構成原子から成る薄膜が形成される。
FIG. 3 is a diagram showing the configuration of an apparatus for implementing the present invention. In FIG. 3, 31 is a vacuum chamber, 32 is an electrode serving as a cathode electrode or a high frequency electrode, 33 is an electrode shield, 35 is a substrate support, 36 is a target, 37 is a vapor deposition material, 38 is a substrate, 39,3
9' is a shutter. A target 36 made of a predetermined material and a vapor deposition material 37 are exposed to a shutter 39.
After installing the vacuum chamber 31 facing the substrate 38 via the
A predetermined amount of gas mixed with N2 active gas is introduced,
When a negative voltage or a high frequency voltage is applied to the electrode 32, discharge is started. At the same time, the vapor deposition substance 37 placed in the evaporation source 34 is heated and evaporated by a heating device provided in the evaporation source 34 . When the shutters 39 and 39' are removed after the above steps, the board 3 is removed.
8, a thin film consisting of atoms constituting the target 36 and atoms constituting the vapor deposition substance 37 is formed.
Ｐを多量に含むSi膜を形成する場合を例に採
り、さらに詳細に説明する。ターゲツト３６には
Siターゲツトを用い、蒸着物質３７にはＰの塊を
用い、蒸発源３４には抵抗加熱による加熱装置を
備えた蒸発源を用いる。導入するAr圧力を１×
10-3〜５×10-2Torrの範囲にして、電極３２に
高周波電圧を印加すると、Si原子がターゲツト３
６の表面からたたき出される。一方、蒸発源３４
により蒸着物質３７を、温度200℃以上に加熱す
ると、Ｐの蒸気圧を高めることができる。この状
態でシヤツタ３９，３９′を取り去ると、基板３
８上に、Ｐを多量に含むSi膜が得られる。このＰ
の濃度は、電極３２ならびに蒸発源３４への投入
電力により、主に、制御できる。 A more detailed explanation will be given by taking as an example a case where a Si film containing a large amount of P is formed. To target 36
A Si target is used, a lump of P is used as the vapor deposition substance 37, and an evaporation source equipped with a heating device using resistance heating is used as the evaporation source 34. The introduced Ar pressure is 1×
When a high frequency voltage is applied to the electrode 32 in the range of 10 -3 to 5 × 10 -2 Torr, Si atoms are transferred to the target 3.
Knocked out from the surface of 6. On the other hand, the evaporation source 34
By heating the vapor deposition material 37 to a temperature of 200° C. or higher, the vapor pressure of P can be increased. If the shutters 39, 39' are removed in this state, the board 3
8, a Si film containing a large amount of P is obtained. This P
The concentration of can be controlled mainly by the power input to the electrode 32 and the evaporation source 34.
なお、上記実施例では、蒸発源３４として抵抗
加熱による加熱装置を備えた蒸発源を用いるとし
たが、これに限定されることなく、誘導加熱によ
る加熱装置、あるいは電子線照射による加熱装置
を備えた蒸発源も有効に採用することができる。
さらに、上記実施例では、スパツタリングによる
薄膜形成と真空蒸着による薄膜形成とを同時に行
なうとして説明したが、電極３２及び蒸発源３４
への電力投入を時間的に交互に行ない、それぞれ
の投入電力を時間的に制御することによつて、基
板３８上の薄膜の厚さ方向の組成分布を任意に制
御することができ、また、この制御は、シヤツタ
３９，３９′の開閉を制御することによつても容
易に行なうことができる。 In the above embodiment, an evaporation source equipped with a heating device using resistance heating is used as the evaporation source 34, but the evaporation source is not limited to this, and may include a heating device using induction heating or a heating device using electron beam irradiation. Other evaporation sources can also be effectively employed.
Furthermore, in the above embodiment, thin film formation by sputtering and thin film formation by vacuum evaporation are performed simultaneously, but the electrode 32 and the evaporation source 34
By alternately applying power to the substrate 38 and controlling the respective input power temporally, the composition distribution in the thickness direction of the thin film on the substrate 38 can be arbitrarily controlled. This control can also be easily performed by controlling the opening and closing of the shutters 39, 39'.
本発明は、ターゲツトの製作が困難な物質、例
えばＰ、As、Sb等、と真空蒸着が困難な物質、
例えばTa、Ｗ等、との化合物もしくは混合膜の
製作には特に有効である。即ち、後者の物質をス
パツタリング法により、一方、前者を真空蒸着法
により、製作すればよい。 The present invention uses substances that are difficult to manufacture as targets, such as P, As, and Sb, and substances that are difficult to vacuum evaporate.
For example, it is particularly effective for producing compound or mixed films with Ta, W, etc. That is, the latter material can be manufactured by sputtering, while the former can be manufactured by vacuum evaporation.
さらに、本発明においては、蒸発源が真空槽に
対して電気的に浮遊状態に設けられていること、
すなわち、蒸発源と真空槽とを絶縁された状態に
することにより、種々の特性の薄膜が安定して得
られる。それは、電気的に浮遊状態に無い場合
は、ターゲツトと蒸発源との間にもプラズマが発
生し、蒸発源が破損する危険があるが、電気的に
浮遊状態とすることで上記破損の危険はなくなる
からである。 Furthermore, in the present invention, the evaporation source is provided in an electrically floating state with respect to the vacuum chamber;
That is, by insulating the evaporation source and the vacuum chamber, thin films with various characteristics can be stably obtained. If the target is not in an electrically floating state, plasma will also be generated between the target and the evaporation source, and there is a risk of damaging the evaporation source. Because it will disappear.
一方、本発明における薄膜の形成は、第３図の
基板支持台３５に運動を付与することにより、よ
り均一に行なうことができ、さらに、ターゲツト
や蒸着物質の大きさ、個数、それらの間の相対的
位置関係は、目的に応じ、基板の位置、大きさを
考慮して適宜定めることができる。 On the other hand, the formation of a thin film in the present invention can be performed more uniformly by imparting motion to the substrate support 35 shown in FIG. The relative positional relationship can be determined as appropriate depending on the purpose and taking into consideration the position and size of the substrate.
以上説明したように、本発明によれば、スパツ
タリング法によるターゲツトとして供給すること
が困難な物質を含む薄膜を、安価に、かつ安定に
形成することができる。
As explained above, according to the present invention, a thin film containing a substance that is difficult to supply as a target by a sputtering method can be formed stably at low cost.
第１図及び第２図は従来技術の説明図、第３図
は本発明装置の実施例説明用の構成図である。
符号の説明 １１，３１…真空槽、１２，２
１，２２，３２…電極、１３，２３，２４，３６
…ターゲツト、１４，３３…電極シールド、１
５，２５，３５…基板支持台、１６，２６，３８
…基板、３４…蒸発源、３７…蒸着物質、３９，
３９′…シヤツタ。
1 and 2 are explanatory diagrams of the prior art, and FIG. 3 is a configuration diagram for explaining an embodiment of the apparatus of the present invention. Explanation of symbols 11, 31...Vacuum chamber, 12, 2
1, 22, 32...electrode, 13, 23, 24, 36
...Target, 14, 33...Electrode shield, 1
5, 25, 35...Substrate support stand, 16, 26, 38
...substrate, 34...evaporation source, 37...evaporation substance, 39,
39'...Shutter.
Claims (1)
は高周波電極に設置したターゲツトとを真空槽内
に配置し、前記陰極電極もしくは高周波電極への
電圧印加で生成される高エネルギイオンの衝突に
よりターゲツト表面からターゲツト構成原子をた
たき出し、この原子を前記基板面上に堆積させて
薄膜を形成する薄膜形成装置において、 前記ターゲツト構成原子とは異なる蒸着物質を
入れた蒸発源を、前記ターゲツトを設置した真空
槽内に備え、前記蒸発源が前記真空槽に対して電
気的に浮遊状態に設けられ、前記蒸着物質を加熱
蒸発することで、前記ターゲツト構成原子ならび
に前記蒸着物質構成原子から成る薄膜を前記基板
面上に形成することを特徴とする薄膜形成装置。[Scope of Claims] 1. A substrate placed on a substrate support stand and a target placed on a cathode electrode or a high-frequency electrode are placed in a vacuum chamber, and high-energy ions are generated by applying a voltage to the cathode electrode or high-frequency electrode. In a thin film forming apparatus for forming a thin film by ejecting target constituent atoms from the target surface by collision with the target and depositing these atoms on the substrate surface, an evaporation source containing an evaporation substance different from the target constituent atoms is attached to the target. The evaporation source is provided in a vacuum chamber in which the evaporation source is electrically suspended with respect to the vacuum chamber, and the evaporation source is heated and evaporated to form the target constituent atoms and the evaporation substance constituent atoms. A thin film forming apparatus characterized in that a thin film is formed on the substrate surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12486283A JPS6017070A (en) | 1983-07-11 | 1983-07-11 | Method and device for forming thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12486283A JPS6017070A (en) | 1983-07-11 | 1983-07-11 | Method and device for forming thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6017070A JPS6017070A (en) | 1985-01-28 |
| JPH048506B2 true JPH048506B2 (en) | 1992-02-17 |
Family
ID=14895933
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12486283A Granted JPS6017070A (en) | 1983-07-11 | 1983-07-11 | Method and device for forming thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6017070A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01298153A (en) * | 1988-05-25 | 1989-12-01 | Raimuzu:Kk | Formation of laminated film |
| CH686253A5 (en) * | 1992-08-28 | 1996-02-15 | Balzers Hochvakuum | A method for controlling the degree of reaction and coating plant. |
| KR100483426B1 (en) * | 2002-10-14 | 2005-04-20 | 주식회사 아세아프로텍 | Moving cleaner for vacuum cleaning system |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57188676A (en) * | 1981-05-14 | 1982-11-19 | Toshiba Corp | Forming device for thin film by vacuum |
| JPS58177463A (en) * | 1982-04-12 | 1983-10-18 | Hitachi Ltd | Method and device for formation of thin film |
| JPS59134821A (en) * | 1983-01-21 | 1984-08-02 | Hitachi Ltd | Method and device for manufacturing thin film |
-
1983
- 1983-07-11 JP JP12486283A patent/JPS6017070A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57188676A (en) * | 1981-05-14 | 1982-11-19 | Toshiba Corp | Forming device for thin film by vacuum |
| JPS58177463A (en) * | 1982-04-12 | 1983-10-18 | Hitachi Ltd | Method and device for formation of thin film |
| JPS59134821A (en) * | 1983-01-21 | 1984-08-02 | Hitachi Ltd | Method and device for manufacturing thin film |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6017070A (en) | 1985-01-28 |
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