JPH03122266A - Production of thin nitride film - Google Patents
Production of thin nitride filmInfo
- Publication number
- JPH03122266A JPH03122266A JP26239789A JP26239789A JPH03122266A JP H03122266 A JPH03122266 A JP H03122266A JP 26239789 A JP26239789 A JP 26239789A JP 26239789 A JP26239789 A JP 26239789A JP H03122266 A JPH03122266 A JP H03122266A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thin film
- nitride thin
- nitrided
- nitride film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000010409 thin film Substances 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 25
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910001873 dinitrogen Inorganic materials 0.000 claims abstract description 11
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000010941 cobalt Substances 0.000 claims abstract description 4
- 229910017052 cobalt Inorganic materials 0.000 claims abstract description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims abstract description 3
- 238000000151 deposition Methods 0.000 claims abstract description 3
- 229910052742 iron Inorganic materials 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 12
- 239000010408 film Substances 0.000 abstract description 8
- 238000002425 crystallisation Methods 0.000 abstract 1
- 230000008025 crystallization Effects 0.000 abstract 1
- 230000005291 magnetic effect Effects 0.000 description 10
- 239000007789 gas Substances 0.000 description 8
- 238000010894 electron beam technology Methods 0.000 description 5
- 238000010884 ion-beam technique Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 229910001337 iron nitride Inorganic materials 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- -1 cobalt nitride Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 150000002831 nitrogen free-radicals Chemical class 0.000 description 1
- 238000005478 sputtering type Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、半導体、磁気記録媒体、および誘電体などに
幅広く利用される窒化物薄膜の製造方法に関するもので
ある。半導体では、金属配線とシリコン高濃度層との間
の中間層、磁気記録媒体では、磁性層、および誘電体で
は、コンデンサーやＭＯ３型半導体のゲート誘電体層と
して広般な用途がある。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for manufacturing nitride thin films that are widely used in semiconductors, magnetic recording media, dielectrics, and the like. In semiconductors, it is widely used as an intermediate layer between metal wiring and a silicon-rich layer, in magnetic recording media as a magnetic layer, and in dielectrics as a gate dielectric layer for capacitors and MO3 type semiconductors.
従来の技術
以下図面を参照しながら、従来の窒化物薄膜の製造方法
の例について説明する。第２図は一般的な反応性スパッ
タ法に用いるスパシタ装置の断面の模式図である。１は
真空容器、９は窒化したい元素のターゲット、４は基板
、８はガス導入口、１０はスパッタ用電源が主要構成要
素である。ガス導入口８よりアルゴンガスと窒素ガスを
導入しながら、ターゲット９上にグロー放電プラズマを
発生させ、スパッタリングにより、基板４上に窒化物薄
膜を形成する。第３図はイオン照射型の反応性蒸着装置
の断面の模式図である。電子ビーム源３より発生させた
電子ビームをルツボ２の中の窒化したい元素の蒸発源に
照射して加熱蒸発させると同時に窒素イオンビーム発生
器１１より発生させたイオンビームを基板４に照射して
窒化物薄膜を形成する。窒素イオンビーム発生器１１と
しては、熱陰極を使用するカウフマン型イオン源を使用
した例がある。 （例えば、日本応用磁気学会誌１２巻
１９８８年Ｎα２、ｐｐ、３２５〜３２８、栄岩、松本
）発明が解決しようとする課題
しかしながら上記のような例では、反応性スパッタ法の
場合、プラズマのイオン化率が高くなく反応性に乏しく
、イオン照射型の反応性蒸着法の場合、イオンビーム発
生源がを電極である場合、スパッタリングやフィラメン
トの寿命という問題点がある。BACKGROUND OF THE INVENTION An example of a conventional method for manufacturing a nitride thin film will be described below with reference to the drawings. FIG. 2 is a schematic cross-sectional view of a sputtering device used in a general reactive sputtering method. The main components are 1 a vacuum vessel, 9 a target of the element to be nitrided, 4 a substrate, 8 a gas inlet, and 10 a sputtering power source. While introducing argon gas and nitrogen gas through the gas inlet 8, glow discharge plasma is generated on the target 9, and a nitride thin film is formed on the substrate 4 by sputtering. FIG. 3 is a schematic cross-sectional view of an ion irradiation type reactive vapor deposition apparatus. An electron beam generated from the electron beam source 3 is irradiated onto the evaporation source of the element to be nitrided in the crucible 2 to heat and evaporate it, and at the same time, an ion beam generated from the nitrogen ion beam generator 11 is irradiated onto the substrate 4. Form a nitride thin film. As the nitrogen ion beam generator 11, there is an example in which a Kauffman type ion source using a hot cathode is used. (For example, Journal of the Japan Society of Applied Magnetics, Vol. 12, 1988, Nα2, pp. 325-328, Eiwa, Matsumoto) Problems to be Solved by the Invention However, in the above example, in the case of reactive sputtering, plasma ionization In the case of the ion irradiation type reactive vapor deposition method, which has low yield and poor reactivity, there are problems with sputtering and filament life when the ion beam generation source is an electrode.
本発明は上記問題点に鑑み、窒素ガスの電子サイクロト
ロン共鳴プラズマを基板に作用させると同時に、窒化し
たい元素を蒸着させ、基板上に窒化物薄膜を形成するこ
とを特徴とする窒化物薄膜の製造方法を提供するもので
ある。In view of the above-mentioned problems, the present invention produces a nitride thin film by applying an electron cyclotron resonance plasma of nitrogen gas to a substrate and simultaneously depositing an element to be nitrided to form a nitride thin film on the substrate. The present invention provides a method.
課題を解決するための手段
上記課題を解決するために本発明の窒化物薄膜の製造方
法では、窒素ガスの電子サイクロトロン共鳴プラズマを
基板に作用させると同時に、窒化したい元素を蒸着させ
、基板上に窒化物薄膜を形成する。電子サイクロトロン
共鳴プラズマは、磁場中でマイクロ波と、電子とが共鳴
現象をおこして得られる高密度のプラズマである。無電
極放電であり、マイクロ波はマイクロ波透過窓を通じて
プラズマ発生室に導入される。Means for Solving the Problems In order to solve the above problems, in the method for manufacturing a nitride thin film of the present invention, an electron cyclotron resonance plasma of nitrogen gas is applied to a substrate, and at the same time, an element to be nitrided is vapor-deposited on the substrate. Form a nitride thin film. Electron cyclotron resonance plasma is a high-density plasma obtained by a resonance phenomenon between microwaves and electrons in a magnetic field. It is an electrodeless discharge, and microwaves are introduced into the plasma generation chamber through a microwave transmission window.
作用
本発明は上記した方法によって、基板上に窒化物薄膜を
形成する。この結果、従来より、高真空中での成膜や、
無電極での成膜が可能となり、従来では得られなかった
優れた特徴を有する窒化物薄膜を得ることができる。そ
の特徴とは、純度、結晶性および耐久性などの特性が優
れている等である。Operation The present invention forms a nitride thin film on a substrate by the method described above. As a result, film formation in high vacuum,
It becomes possible to form a film without electrodes, and it is possible to obtain a nitride thin film with excellent characteristics not previously available. Its characteristics include excellent properties such as purity, crystallinity, and durability.
実施例
以下本発明の一実施例の窒化物薄膜の製造方法について
、画面を参照しながら説明する。第１図は本発明の一実
施例の窒化物薄膜の製造方法に用いる製造装置の断面の
模式図である。１は真空容器、２はルツボ、３は電子ビ
ーム発生用フィラメント。４は基板、５は磁場発生用コ
イル、６はマイクロ波透過窓、７はマイクロ波発生源、
８はガス導入口である。以下に、窒化鉄膜の製法につい
て詳述する。真空容器ｌ中に、ガス導入口８から窒素ガ
スを導入しＥＣＲプラズマを励起状態にする。そこへ、
ルツボ２内に配置した窒化したい元素の塊状物に電子ビ
ームを照射し蒸発させる。基板上では、活性度の高い窒
素のラジカルや、イオンの効果により効率的に、窒化物
薄膜が形成される。本発明の一実施例の窒化物薄膜の製
造方法では、鉄窒化膜を成膜した。真空容器を１０−’
Ｔ ｏ ｒｒ以下に真空引きした後、窒素ガスを５３Ｃ
ＣＭ導入し、５ Ｘｌ０−’Ｔ ｏ ｒ ｒのガス圧に
設定し、電子サイクロトロン共鳴プラズマを発生させる
。マイクロ波のパワーは、２００Ｗに設定した。基板温
度は約３５°Ｃである。成膜した薄膜はＸ線回折で結晶
系を調べたところ、ＦｅｚＮであった。EXAMPLE Hereinafter, a method for manufacturing a nitride thin film according to an example of the present invention will be described with reference to screens. FIG. 1 is a schematic cross-sectional view of a manufacturing apparatus used in a method for manufacturing a nitride thin film according to an embodiment of the present invention. 1 is a vacuum container, 2 is a crucible, and 3 is a filament for generating an electron beam. 4 is a substrate, 5 is a magnetic field generation coil, 6 is a microwave transmission window, 7 is a microwave generation source,
8 is a gas inlet. The method for manufacturing the iron nitride film will be described in detail below. Nitrogen gas is introduced into the vacuum container l from the gas inlet 8 to excite the ECR plasma. There,
A lump of the element to be nitrided placed in the crucible 2 is irradiated with an electron beam to evaporate it. A nitride thin film is efficiently formed on the substrate by the effects of highly active nitrogen radicals and ions. In a method for manufacturing a nitride thin film according to an embodiment of the present invention, an iron nitride film was formed. 10-' vacuum container
After vacuuming to below T o rr, nitrogen gas was heated to 53C.
CM is introduced, the gas pressure is set to 5 Xl0-'T or r, and electron cyclotron resonance plasma is generated. The power of the microwave was set to 200W. The substrate temperature is approximately 35°C. When the crystal system of the formed thin film was examined by X-ray diffraction, it was found to be FezN.
本発明の第２の一実施例として、コバルトの窒化膜の成
膜について示す。第１の一実施例と同様の装置にて、真
空容器を１０−’Ｔ ｏ ｒ ｒ以下に真空引きした後
、窒素ガスを２．５３ＣＣＭ導入し、１０−’Ｔｏｒｒ
のガス圧に設定し、電子サイクロトロン共鳴プラズマを
発生させる。マイクロ波のパワーは、１５０Ｗに設定し
た。基板温度は約３５°Ｃである。成膜した薄膜はＸ線
回折で結晶系を調べたところ、Ｃｏ、Ｎであった。以上
の実施例に述べたＦｅ、Ｎ、およびＣｏ、Ｎは磁性薄膜
として、磁気記録媒体や、磁気ヘッド用薄膜としての用
途が考えられる。As a second embodiment of the present invention, the formation of a cobalt nitride film will be described. After evacuating the vacuum container to 10-' Torr or less using the same equipment as in the first embodiment, 2.53 CCM of nitrogen gas was introduced and the vacuum was reduced to 10-' Torr.
Set the gas pressure to , and generate electron cyclotron resonance plasma. The power of the microwave was set at 150W. The substrate temperature is approximately 35°C. When the crystal system of the formed thin film was examined by X-ray diffraction, it was found to be Co and N. Fe, N, Co, and N described in the above embodiments can be used as magnetic thin films for magnetic recording media and thin films for magnetic heads.
以上の実施例に述べたように、本発明では、窒素ガスの
電子サイクロトロン共鳴プラズマを基板に作用させると
同時に、窒化したい元素を蒸着させ、基板上に窒化物薄
膜を形成することを特徴とする窒化物薄膜の製造方法を
実現する。窒化させる元素は、上記した実施例の鉄、コ
バルト以外にも、チタン、ジルコニウム、タンタル、ク
ロム、アルミ、シリコン、ボロン、ニオブ、ガリウム、
および、モリブデンなどの窒化物薄膜の形成が可能であ
る。As described in the above embodiments, the present invention is characterized in that electron cyclotron resonance plasma of nitrogen gas is applied to the substrate, and at the same time, the element to be nitrided is vapor-deposited to form a nitride thin film on the substrate. A method for manufacturing nitride thin films is realized. Elements to be nitrided include titanium, zirconium, tantalum, chromium, aluminum, silicon, boron, niobium, gallium, in addition to iron and cobalt in the above examples.
It is also possible to form a thin film of nitride such as molybdenum.
発明の効果
以上のように本発明では、窒素ガスの電子サイクロトロ
ン共鳴プラズマを基板に作用させると同時に、窒化した
い元素を蒸着させ、基板上に窒化物情膜を形成すること
を特徴とする窒化物薄膜の製造方法を実現する。その結
果、高活性な電子サイクロトロン共鳴プラズマの作用で
、容易に、目的とする窒化物薄膜の成膜が可能になると
いう効果を有している。Effects of the Invention As described above, in the present invention, an electron cyclotron resonance plasma of nitrogen gas is applied to a substrate, and at the same time, an element to be nitrided is vapor-deposited to form a nitride film on the substrate. Realize a thin film manufacturing method. As a result, the effect is that the desired nitride thin film can be easily formed by the action of highly active electron cyclotron resonance plasma.
第１図は本発明の一実施例の窒化物薄膜の製造方法に用
いられる薄膜製造装置の断面の模式図、第２図は一般的
な従来例の窒化物薄膜の製造方法に用いられる反応性ス
パッタ型薄膜製造装置の断面の模式図、第３図は一般的
な従来例の窒化物薄膜の製造方法に用いられるイオン照
射型の反応性蒸着装置の断面の模式図である。
１・・・・・・真空容器、２・・・・・・ルツボ、３・
・・・・・電子ビーム発生用フィラメント、４・・・・
・・基板、５・・・・・・磁場発生用コイル、６・・・
・・・マイクロ波透過窓、７・・・・・・マイクロ波発
生器、８・・・・・・ガス導入口、９・・・・・・ター
ゲット、１０・・・・・・プラズマ発生用電源、１１・
・・・・・イオンビーム発生源。Fig. 1 is a schematic cross-sectional view of a thin film manufacturing apparatus used in a method for producing a nitride thin film according to an embodiment of the present invention, and Fig. 2 shows a reactivity diagram used in a general conventional method for producing a nitride thin film. FIG. 3 is a schematic cross-sectional view of a sputtering type thin film production apparatus. FIG. 3 is a schematic cross-sectional view of an ion irradiation type reactive vapor deposition apparatus used in a general conventional method for producing a nitride thin film. 1... Vacuum container, 2... Crucible, 3.
...Filament for electron beam generation, 4...
...Substrate, 5...Magnetic field generation coil, 6...
...Microwave transmission window, 7...Microwave generator, 8...Gas inlet, 9...Target, 10...For plasma generation Power supply, 11.
...Ion beam source.
Claims (3)
板に作用させると同時に、窒化したい元素を蒸着させ、
基板上に窒化物薄膜を形成することを特徴とする窒化物
薄膜の製造方法。(1) Applying electron cyclotron resonance plasma of nitrogen gas to the substrate and simultaneously depositing the element to be nitrided,
A method for producing a nitride thin film, the method comprising forming a nitride thin film on a substrate.
項（１）記載の窒化物薄膜の製造方法。(2) The method for producing a nitride thin film according to claim (1), wherein the element to be nitrided is iron.
る請求項（１）記載の窒化物薄膜の製造方法。(3) The method for producing a nitride thin film according to claim (1), wherein the element to be nitrided is cobalt.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26239789A JPH03122266A (en) | 1989-10-06 | 1989-10-06 | Production of thin nitride film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26239789A JPH03122266A (en) | 1989-10-06 | 1989-10-06 | Production of thin nitride film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03122266A true JPH03122266A (en) | 1991-05-24 |
Family
ID=17375202
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26239789A Pending JPH03122266A (en) | 1989-10-06 | 1989-10-06 | Production of thin nitride film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03122266A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6962873B1 (en) * | 2002-12-10 | 2005-11-08 | Novellus Systems, Inc. | Nitridation of electrolessly deposited cobalt |
| US7338908B1 (en) | 2003-10-20 | 2008-03-04 | Novellus Systems, Inc. | Method for fabrication of semiconductor interconnect structure with reduced capacitance, leakage current, and improved breakdown voltage |
| US7531463B2 (en) | 2003-10-20 | 2009-05-12 | Novellus Systems, Inc. | Fabrication of semiconductor interconnect structure |
| US7605082B1 (en) | 2005-10-13 | 2009-10-20 | Novellus Systems, Inc. | Capping before barrier-removal IC fabrication method |
| US7972970B2 (en) | 2003-10-20 | 2011-07-05 | Novellus Systems, Inc. | Fabrication of semiconductor interconnect structure |
| US8372757B2 (en) | 2003-10-20 | 2013-02-12 | Novellus Systems, Inc. | Wet etching methods for copper removal and planarization in semiconductor processing |
| US9074287B2 (en) | 2009-09-02 | 2015-07-07 | Novellus Systems, Inc. | Reduced isotropic etchant material consumption and waste generation |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5485398A (en) * | 1977-12-20 | 1979-07-06 | Fuji Photo Film Co Ltd | Magnetic recording medium |
| JPS62269305A (en) * | 1986-05-19 | 1987-11-21 | Nippon Telegr & Teleph Corp <Ntt> | Thin film of magnetic material and manufacture thereof |
| JPS6396218A (en) * | 1986-10-11 | 1988-04-27 | Kawasaki Steel Corp | Production of extremely low iron loss grain oriented silicon steel sheet |
| JPH01223632A (en) * | 1987-04-16 | 1989-09-06 | Fuji Photo Film Co Ltd | Method and device for manufacturing magnetic recording medium |
| JPH01104763A (en) * | 1987-10-16 | 1989-04-21 | Canon Inc | Production of thin metal compound film |
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|---|---|---|---|---|
| US6962873B1 (en) * | 2002-12-10 | 2005-11-08 | Novellus Systems, Inc. | Nitridation of electrolessly deposited cobalt |
| US7338908B1 (en) | 2003-10-20 | 2008-03-04 | Novellus Systems, Inc. | Method for fabrication of semiconductor interconnect structure with reduced capacitance, leakage current, and improved breakdown voltage |
| US7531463B2 (en) | 2003-10-20 | 2009-05-12 | Novellus Systems, Inc. | Fabrication of semiconductor interconnect structure |
| US7972970B2 (en) | 2003-10-20 | 2011-07-05 | Novellus Systems, Inc. | Fabrication of semiconductor interconnect structure |
| US8372757B2 (en) | 2003-10-20 | 2013-02-12 | Novellus Systems, Inc. | Wet etching methods for copper removal and planarization in semiconductor processing |
| US9074286B2 (en) | 2003-10-20 | 2015-07-07 | Novellus Systems, Inc. | Wet etching methods for copper removal and planarization in semiconductor processing |
| US9447505B2 (en) | 2005-10-05 | 2016-09-20 | Novellus Systems, Inc. | Wet etching methods for copper removal and planarization in semiconductor processing |
| US7605082B1 (en) | 2005-10-13 | 2009-10-20 | Novellus Systems, Inc. | Capping before barrier-removal IC fabrication method |
| US7811925B1 (en) | 2005-10-13 | 2010-10-12 | Novellus Systems, Inc. | Capping before barrier-removal IC fabrication method |
| US8043958B1 (en) | 2005-10-13 | 2011-10-25 | Novellus Systems, Inc. | Capping before barrier-removal IC fabrication method |
| US9074287B2 (en) | 2009-09-02 | 2015-07-07 | Novellus Systems, Inc. | Reduced isotropic etchant material consumption and waste generation |
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