JPH03215664A - Thin film forming device - Google Patents

Abstract

PURPOSE:To prevent the temp. rise on a target surface and to allow the formation of a film at a high speed by turning on of a high electric power for sputtering by disposing a ceramics shield near the surface of the cathode target disposed to face an anode mounted with a substrate. CONSTITUTION:The anode 10 mounted with the substrate 11 and the cathode 13 mounted with the target 12 are disposed to face each other in a vacuum chamber 9 and a permanent magnet 14 is disposed below the cathode 13. An atmosphere gas is introduced from an introducing port 16 into this vacuum chamber 9 and the inside of the chamber is evacuated from a discharge port 15. A voltage is impressed between the two electrodes 10 and 13 in this state and the magnetic field orthogonal with the electric field is generated near the cathode target 12 from the above-mentioned magnet 14. Plasma is generated in this way and the target 12 is sputtered by ions therein to deposit the thin film on the substrate 11. The ceramics shield 17 is disposed near the surface of the cathode target 12 of the above-mentioned thin film forming device. The electrons in the plasma are trapped in this way to lower the sheath voltage. The heating of the target 12 by the heat from the plasma is prevented in this way and the throwing of the high electric power for sputtering is permitted.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an improvement in a thin film forming apparatus that can be used in the process of forming thin films in the semiconductor industry and the like.

[Prior Art] In recent years, there has been remarkable progress in thin film forming apparatuses. For example, thin film forming apparatuses are used in various fields as means for manufacturing magnetic tapes, reflective films, etc. using vapor deposition apparatuses and sputtering apparatuses.

Hereinafter, a case where aluminum (A/) is deposited will be described as an example of the above-mentioned thin film forming apparatus with reference to the drawings.

FIG. 2 shows a cross-sectional view of a conventional thin film forming apparatus.

The vacuum chamber 1 has an atmospheric gas inlet 8 and an atmospheric gas exhaust port 7.
has. 6 is a permanent magnet for applying an axial magnetic field within the vacuum chamber, and an anode 2 and a cathode 5 are arranged to generate an axial electric field within the vacuum chamber 1. By sputtering the target 4, the sputtered target molecules are attached to the substrate 3.

The thin film forming apparatus configured as above will be described below.

The vacuum chamber 1 is maintained at a vacuum degree of, for example, about 5.times.10@-3 Torr with argon gas, for example, 208 CCM, flowing through the connected atmospheric gas inlet 8.

When a voltage of, for example, 0.5 KV is applied between the anode 2 and the cathode 5 to the argon gas introduced into the vacuum chamber 1 through the atmospheric gas inlet 8, the effect of the magnetic field from the permanent magnet 6 is also applied to the surface of the target 4. plasma is generated. Positive ions of argon gas generated by this plasma discharge knock out atoms of the target 4 and deposit an aluminum film on the substrate 3.

[Problems to be Solved by the Invention] However, in the above configuration, as the sputtering power is increased, the target surface is heated by the heat generated from the plasma. As a result, if the target was metal, the target would melt, or if the target was insulating, it would crack due to heat shock.

As a result, there was a problem in that sputtering power could not be increased more than necessary.

In order to solve the above problems, the present invention aims to prevent the target surface from being heated even when sputtering power is increased.
The object of the present invention is to provide a thin film forming apparatus with a high film forming rate.

[Means for Solving the Problems] In order to solve the above problems, the present invention includes a cathode target and an anode placed facing each other in a vacuum chamber connected to an exhaust system, and a cathode target and an anode placed opposite each other in a vacuum chamber connected to an exhaust system. A power supply connected between the anodes, and a magnetic field generating means arranged to generate a magnetic field perpendicular to the electric field near the cathode target, and the particles to be sputtered are deposited near the anode facing the cathode target. In a thin film forming apparatus that includes a substrate for generating plasma, an atmospheric gas inlet for introducing gas for generating plasma, and an atmospheric gas exhaust port,
The thin film forming apparatus is characterized in that a ceramic shield is provided near the surface of the cathode target.

[Function] According to the configuration of the present invention described above, the inert gas and nitrogen gas supplied from the atmospheric gas inlet are turned into a plasma state by the voltage applied between the anode and the cathode and the magnetic field of the permanent magnet. Electrons in the plasma have a faster velocity than argon ions in the plasma, so they head toward the cathode target faster than the argon ions.

At this time, since the surface of the cathode target is covered with a ceramic shield, electrons are trapped in that area and the sheath voltage is lowered.

As a result, the distance between the cathode target and the plasma changes,
The cathode target is less likely to be heated by heat from the plasma. Therefore, it becomes possible to input a higher sputtering power than conventionally.

[Example] A thin film forming apparatus according to an example of the present invention will be described below with reference to the drawings.

FIG. 1 shows a cross-sectional view of a thin film forming apparatus in an embodiment of the present invention. The vacuum 9 has an atmospheric gas inlet 16 and an atmospheric gas exhaust port 15 .

14 is a permanent magnet for applying an axial magnetic field within the vacuum chamber, and an anode 1o and a cathode 13 are arranged to generate an axial electric field in the vacuum chamber 9. By sputtering the target 12, the sputtered target molecules are attached to the substrate 11.

The thin film forming apparatus configured as above will be described below with reference to FIG. 1 for depositing aluminum.

The vacuum chamber 9 has a pressure of approximately 2×10 −3 T with argon gas, for example, 20 SCCM flowing through the atmospheric gas inlet 16.
A vacuum of orr is maintained. The supplied argon gas becomes a plasma state due to the effect of the voltage applied between the anode 1o and the cathode 13 and the magnetic field from the permanent magnet.

Argon ions in the atmospheric gas that has become a plasma sputter the aluminum target. At this time, even if a higher sputtering voltage, for example about IOKW, is applied, the ceramic shield 17 traps electrons, so sputtering can be performed without the target surface being heated much. The ceramic shield 17 used in this example had a size that covered about 1/5 of the surface of the cathode target.

Furthermore, when the target is an insulator, it is possible to prevent the target from cracking due to heat shock, and as a result, the sputtering power can be significantly increased.

The ceramic shield material used in the present invention may be any ceramic material. For example, they are alumina-based, silica-based, zirconia-based, titanium-based, or a mixture composition of these.

Although the ceramic shield material covered about 1/5 of the surface of the cathode target in one embodiment of the present invention, the same effect can be obtained by placing it around the cathode target or between the cathode and the target. It was confirmed.

[Effects of the Invention] As described above, according to the present invention, by covering the vicinity of the surface of the cathode target electrode with a ceramic shield, electrons in the plasma are trapped and the sheath voltage is lowered, thereby reducing the distance between the target electrode and the plasma. changes, and as a result, it is possible to input higher sputtering power, and even when sputtering power is increased, the target surface is not heated, and a thin film forming apparatus can be formed that has a high film formation rate. This remarkable effect can be achieved.

[Brief explanation of drawings]

FIG. 1 is a sectional view of a thin film forming apparatus according to an embodiment of the present invention, and FIG. 2 is a sectional view of a conventional thin film forming apparatus. ■...Vacuum chamber, 2...Anode, 3...Substrate, 4...
・Target, 5... Cathode, 6... Permanent magnet, 7.
...Atmosphere gas exhaust port, 8...Atmosphere gas inlet, 9
... Vacuum chamber, 10 ... Anode, 11 ... Substrate, 12
...Target, 13...Cathode, 14...Permanent magnet, 15...Atmosphere gas exhaust port, 16...Atmosphere gas inlet, 17...Ceramic shield. Figure 1 Figure 2

Claims (1)

[Claims] (1) A cathode target and an anode placed facing each other in a vacuum chamber connected to an exhaust system, a power source connected between the cathode target and the anode, and an electric field orthogonal to the electric field near the cathode target. a substrate for depositing particles to be sputtered near an anode facing the cathode target; and an atmosphere for introducing a gas for generating plasma. 1. A thin film forming apparatus including a gas inlet and an atmospheric gas exhaust port, characterized in that a ceramic shield is provided near the surface of the cathode target.