JPH07197240A - Thick film forming device - Google Patents

Abstract

PURPOSE:To improve the adhesion between thick film and a substrate by sputtering a target with the ions from a high vacuum and high speed plasma sputtering source, depositing the sputtered particles on the substrate and vapor- depositing raw material on the surface of the substrate with an electron beam. CONSTITUTION:In this device, the substrate 24 is heated by the substrate heating mechanism 26 and is rotated by the substrate rotation mechanism 25 in the vacuum chamber 21. A high density plasma is generated by using the helical coil 33 of the high-vacuum high-speed plasma sputtering source 23 and the target 32 is subjected to sputtering with the ions in the high density plasma to deposit the sputtered particles on the substrate 24. Then, the raw material such as metal is evaporated by using an electron beam and vapor-deposited on the surface of the substrate 24 to form the objective thick film. Since the thick film is formed after depositing the sputtered particles on the substrate 24, the adhesion is improved to reduce internal stress and to prevent the thick film from being peeled off from the substrate.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thick film forming apparatus for forming a thick film on the surface of a substrate provided in vacuum.

[0002]

2. Description of the Related Art A conventional thick film forming apparatus is shown in FIG. 3, in which two electron beam evaporation sources 2 are arranged in parallel in a lower portion of a vacuum chamber 1. A substrate rotating mechanism 4 for placing and rotating the substrate 3 is provided in the upper part of the vacuum chamber 1, and a substrate heating mechanism 5 is provided behind the substrate 3. In the figure, 6 is a shutter, 7 is a film thickness monitor, 8 is a film thickness monitor shutter, and 9 is an electron beam evaporation source power source.

In such a conventional thick film forming apparatus, at least one of the two electron beam evaporation sources 2 is used to evaporate the raw material metal or the like, and the film thickness monitor 7 stabilizes the vapor deposition rate. Confirm that you have done it. After that, the shutter 6 is opened, metal or the like is vapor-deposited on the surface of the substrate 3, and a thick film is formed there. At that time, the substrate 3 is rotated by the substrate rotating mechanism 4 to adjust the film thickness and the composition ratio.

[0004]

The conventional thick film forming apparatus uses the substrate 3 by evaporating the raw material metal or the like by using at least one of the two electron beam evaporation sources 2 as described above. A thick film is formed on the surface of. However, the adhesion between the substrate 3 and the thick film is poor, the internal stress between the substrate 3 and the thick film is large, and peeling easily occurs.
There was a problem that contact resistance was likely to occur between the substrate 3 and the thick film.

An object of the present invention is to solve the problems of the prior art, to provide good adhesion between the substrate and the thick film, reduce internal stress and prevent peeling, and reduce the contact resistance. Is provided.

[0006]

In order to achieve the above object, the present invention provides a thick film forming apparatus for forming a thick film on the surface of a substrate placed in a vacuum chamber, wherein the thick film is formed on the surface of the substrate. In order to improve the adhesion between the electron beam evaporation source that evaporates a raw material such as a metal with an electron beam and the surface of the substrate and the thick film, a high vacuum high speed that attaches sputtered particles to the surface of the substrate Plasma sputter source,
A substrate rotating mechanism for placing and rotating the substrate is provided.

[0007]

In the present invention, the sputtered particles from the high-vacuum high-speed plasma sputtering source are adhered to the surface of the substrate, and the raw material such as metal is evaporated by the electron beam evaporation source to form a thick film on the surface of the substrate. . At that time, the substrate is rotated by the substrate rotating mechanism.

[0008]

Embodiments of the present invention will be described below with reference to the drawings. A thick film forming apparatus according to an embodiment of the present invention is shown in FIG.
An electron beam evaporation source 22 and a high-vacuum high-speed plasma sputtering source 23 are arranged in parallel in the lower part of the inside of 1. In the electron beam evaporation source 22, a raw material such as metal is evaporated by an electron beam. Sputtered particles are projected from the high-vacuum high-speed plasma sputtering source 23. Vacuum chamber 21
A substrate rotating mechanism 25 on which a substrate 24 is placed is arranged in the upper part of the inside, and a substrate heating mechanism 26 is arranged behind the substrate 24. A shutter 27 is arranged in front of the high-vacuum high-speed plasma sputtering source 23. In the figure, 22a is a power source for an electron beam evaporation source, 28 is a film thickness monitor, and 29 is a film thickness monitor shutter.

FIG. 2 shows a high vacuum high speed plasma sputtering source 23.
In the same figure, the cathode 31 is attached to the lower part of the vacuum case 30, and the cathode 3
A target 32 is placed on the top of the unit 1. A helical coil 33 is arranged in the vacuum case 30, and the central axis of the helical coil 33 is orthogonal to the surface of the target 32. A high frequency oscillation source 34 is connected to the helical coil 33. In FIG. 2, 35 is an electromagnet, 36 is a high frequency power source, and 37 is a permanent magnet.

In such an embodiment, while the substrate 24 heated by the substrate heating mechanism 26 is rotated by the substrate rotating mechanism 25, the high vacuum high speed plasma sputtering source 23 is first used.
The helical coil 33 generates high-density plasma in the high-vacuum high-speed plasma sputtering source 23, and the target 32 is sputtered by the ions in this high-density plasma to attach the sputtered particles to the substrate 24. Next, the electron beam of the electron beam evaporation source 22 is used to evaporate the raw material such as metal,
A thick film is formed on the surface of the substrate 24.

A thick film may be formed on the surface of the substrate 24 by depositing the sputtered particles on the substrate 24 and evaporating a raw material such as a metal with an electron beam of the electron beam evaporation source 22 at the same time.

[0012]

According to the present invention, while rotating the substrate by the substrate rotating mechanism, the sputtered particles from the high-vacuum high-speed plasma sputtering source are attached to the surface of the substrate and the raw material such as metal is evaporated by the electron beam evaporation source. Since a thick film is created on the surface of the substrate, the adhesion between the substrate and the thick film is good,
The internal stress is reduced, peeling does not occur, and the contact resistance is reduced.

[Brief description of drawings]

FIG. 1 is an explanatory diagram of an embodiment of the present invention.

FIG. 2 is an explanatory view showing details of a high vacuum high speed plasma sputtering source used in an embodiment of the present invention.

FIG. 3 is an explanatory view showing a conventional thick film forming apparatus.

[Explanation of symbols] 21 ... Vacuum chamber 22 ... Electron beam evaporation source 23 ... High-vacuum high-speed plasma sputtering source 24 ... Substrate 25 ..... Substrate rotating mechanism 26 ..... Substrate heating mechanism 27 ..... Shutter 28 .... Shutter for film thickness monitor 30 ... Vacuum case 31 ... Cathode 32 ... Target 33 ... Helical coil 34 ...・ High-frequency oscillator 35 ・ ・ ・ ・ Electromagnet 36 ・ ・ ・ ・ ・ ・ ・ High-frequency power source 37 ・ ・ ・ ・ ・ Permanent magnet

Claims (2)

[Claims] 1. A thick film forming apparatus for forming a thick film on the surface of a substrate placed in a vacuum chamber, in which an electron beam is used to deposit a raw material such as a metal to form a thick film on the surface of the substrate. Beam evaporation source, high-vacuum high-speed plasma sputtering source that deposits sputtered particles on the surface of the substrate to improve the adhesion between the surface of the substrate and the thick film, and substrate rotation for placing and rotating the substrate A thick film forming apparatus having a mechanism. 2. A high-vacuum high-speed plasma sputtering source, wherein a helical coil is arranged so that its central axis is orthogonal to the surface of a target attached to a cathode, and a high-frequency oscillation source is connected to the helical coil to discharge plasma. 2. The thick film forming apparatus according to claim 1, wherein the target is sputtered with the ions in FIG.