KR20220094085A - Ion Beam Sputtering Apparatus for Manufacturing a Wire Grid Polarizer - Google Patents

Abstract

The present invention relates to an ion beam sputtering apparatus for manufacturing a polarization filter, and more specifically, to an ion beam sputtering apparatus for manufacturing a polarization filter which is applied with a linear focused ion beam source and a planar sputtering target mounted on a cylindrical or polygonal column to coat a reflection and absorption film of a large-area polarization filter. The ion beam sputtering apparatus comprises a sputtering target, a focused ion beam source, a shutter, a shutter control unit, a main control unit, a shielding mask, a transfer tray, and a driving unit.

Description

Ion Beam Sputtering Apparatus for Manufacturing a Wire Grid Polarizer

The present invention relates to an ion beam sputtering apparatus for manufacturing a polarizing filter, and more particularly, by applying a linear focus type ion beam source and a planar type sputtering target mounted on a cylindrical or polygonal column for coating the reflection and absorption film of a large area polarizing filter It relates to an ion beam sputtering apparatus for manufacturing a polarizing filter.

In general, a deposition apparatus for forming a thin film includes a deposition apparatus using an electron beam and a sputtering apparatus using plasma ions.

A vapor deposition apparatus using an electron beam irradiates electrons accelerated by a predetermined voltage to a material in a crucible placed in a vacuum container and heats it to evaporate, and the evaporated material is placed in a vacuum container to form a substrate, which is a member to be deposited. It is to form a thin film by making it adhere to the surface.

The deposition apparatus using such an electron beam consumes a very large target raw material, and there is a degree of non-uniformity in which the deposition material is not uniformly coated on the substrate. Accordingly, it is difficult to apply a deposition apparatus using an electron beam to coat the reflection and absorption film of a large-area polarizing filter for mass production.

On the other hand, Korean Patent Laid-Open No. 10-1998-055989 (Ion Beam Sputtering Deposition Apparatus) is configured such that the vapor-deposited object (sputtering target) can be rotated by a rotating means. As the ion beam irradiated from the ion gun is uniformly irradiated to the entire surface of the rotating target sputtering target), the target sputtering target) is uniformly sputtered.

In the prior art, as the outer diameter of the target gradually decreases as the sputtering process progresses, the focal position of the ion beam output to the sputtering target and the angle of incidence of the deposition material incident on the polarization grating after sputtering from the target are also changed. If the incident angle of the deposition material is changed, the quality of transmission and polarization may be changed, which may result in deterioration of the quality of the polarizing filter.

Korean Patent Laid-Open No. 10-2017-0023826 (Wire Grid Polarizer with Double Absorbent Region) Korean Patent Laid-Open No. 10-1998-055989 (Ion Beam Sputtering Deposition Apparatus)

The present invention is to solve the problems of the prior art,

First, it is possible to coat the reflection and absorption film of a large-area polarizing filter by applying a linear focus type ion beam source and a planar sputtering target mounted on a cylindrical or polygonal column,

Second, while lowering the consumption rate of the sputtering target, the deposition material can be uniformly deposited on a plurality of polarization gratings,

Third, it is intended to provide an ion beam sputtering apparatus for manufacturing a polarizing filter that is capable of anisotropic processing in a high vacuum environment and capable of in-line large-area mass production.

The ion beam sputtering apparatus for manufacturing a polarizing filter according to the present invention may include a sputtering target, a focal type ion beam generator, a shutter, a shutter control unit, a main control unit, a shielding mask, a transfer tray, and a driving unit.

The sputtering target is implemented as a flat plate mounted on a cylindrical or polygonal column, and the ion beam collides with the surface to emit the sputtered deposition material. The sputtering target consists of a holder to which the target is attached and a holder support for supporting the holder, and a rotating means for rotating the holder may be provided on the holder support.

The focused ion beam generator generates plasma ions and focuses the generated ions to output them to the sputtering target as a linear focused ion beam, but the incident angle is 60 degrees or more, 85 degrees based on a plane perpendicular to the target surface on which the ion beam is incident The ion beam is output as follows.

The shutter blocks the deposition material emitted from the sputtering target. The shutter control unit inserts or removes the shutter between the sputtering target and the transfer tray. The main controller may transmit a shutter insertion signal or a shutter release signal to the shutter controller.

The transfer tray transfers the substrate on which the polarization grating is formed. The driving unit drives the transport tray in a certain direction.

The transfer tray may be controlled by the main controller so that the substrate on which the polarization grating is formed is transferred at an angle of 10 degrees or more and 20 degrees or less with respect to the horizontal axis.

The shielding mask is disposed between the shutter and the transfer tray, and a slit through which the deposition material passes is formed.

The sputtering target may have a cylindrical shape or a cylindrical or planar shape attached to a polygonal pole having at least 4 sides and not more than 8 sides.

According to the ion beam sputtering apparatus for manufacturing a polarizing filter of the present invention having such a configuration, the reflection and absorption film of the large-area polarizing filter can be coated by applying the focal-type ion beam generator and the flat-type sputtering target mounted on a cylindrical or polygonal column. .

In the focused ion beam generator of the present invention, the ion beam is output so that the angle of incidence is 60 degrees or more and 85 degrees or less based on a plane perpendicular to the target surface on which the ion beam is incident, so that a high sputtering yield can be obtained. . That is, there is an effect of coating a large amount of the target material with the same power.

In addition, according to the ion beam sputtering apparatus for manufacturing a polarizing filter of the present invention, a shielding mask having a slit through which the deposition material passes is disposed between the shutter and the transfer tray, so that impurities are primarily filtered out by the shutter, and impurities are secondarily filtered out by the shielding mask This is filtered so that the sputtering molecular material optimal for thin film properties can be uniformly deposited.

In addition, according to the ion beam sputtering apparatus for manufacturing a polarizing filter of the present invention, the ion beam is output to the sputtering target so that the angle of incidence is 60 degrees or more and 85 degrees or less, and the sputtered deposition material is controlled through a shutter. can be uniformly deposited.

As the outer diameter of the target gradually decreases as the sputtering process progresses, the focal position of the ion beam output to the target and the angle of incidence of the deposition material incident on the polarization grating after being sputtered from the target are also changed. In order to solve this problem, the transfer tray is controlled by the main controller so that the substrate on which the polarization grating is formed is transferred at an angle of 10 degrees or more and 20 degrees or less with respect to the horizontal axis, thereby compensating for the angle of incidence of the coating material with the inclination of the transfer tray. That is, anisotropic processing is possible in a high vacuum environment, and inline large-area mass production is possible.

1 is a first embodiment for explaining the main configuration of an ion beam sputtering apparatus for manufacturing a polarizing filter according to the present invention.
2 is an exemplary view for explaining a polarization grating coated with a deposition material by an ion beam sputtering apparatus for manufacturing a polarizing filter according to the present invention.
3 is a second embodiment for explaining the main configuration of the ion beam sputtering apparatus for manufacturing a polarizing filter according to the present invention.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

1 is a first embodiment for explaining the main configuration of an ion beam sputtering apparatus for manufacturing a polarizing filter according to the present invention.

1, the ion beam sputtering apparatus for manufacturing a polarizing filter according to the present invention includes a sputtering target 110, a focused ion beam generator 120, a shutter 130, a shielding mask 140, and a transfer tray 150. can be configured including

The ion beam sputtering apparatus for manufacturing a polarizing filter according to the present invention is configured in a vacuum chamber forming a sealed space therein. A vacuum pump for controlling the degree of vacuum of the internal space may be coupled to one side of the vacuum chamber. It may be desirable for the vacuum chamber to have a high degree of vacuum to minimize the oxygen content. A non-reactive gas or a reactive gas is injected into the vacuum chamber according to a process. The non-reactive gas includes, for example, Ar, Ne, He, Xe, and the like, and the reactive gas includes N2, O2, CH4, CF4, and the like. In some cases, a mixture of a non-reactive gas and a reactive gas is used.

The sputtering target 110 is implemented as a flat plate mounted on a cylindrical or polygonal column, and the ion beam collides with the surface to emit the sputtered deposition material. Silicon (Si), yttrium (Y), aluminum (Al), copper (Cu), silver (Ag), titanium (Ti), magnesium (Mg), neodium (Nd), tantalum (Ta) as a target or evaporation material ), zirconium (Zr), chromium (Cr), nickel (Ni), iron (Fe), molybdenum (Mo), tungsten (W), cobalt (Co), zinc (Zn), tin (Sn), indium (In) ), gallium (Ga), selenium (Se), and the like can be used. The sputtering target 110 is composed of a holder to which the target is attached and a holder support for supporting the holder, and a rotating means for rotating the holder may be provided on the holder support.

When using a planar target, the target attachment module may have a single planar shape or a polygonal pole shape with four or more sides. One independent planar target material per side can be detached and attached using clamps. In the case of a polygonal pillar shape, targets of the same or different materials are independently mounted on each side and when the targets are replaced, the target can be changed by rotating the polygonal pillars without breaking the vacuum. The back side of the target can be cooled by flowing cooling water. Preferably, the polygonal columnar shape of the target attachment surface may be 4 or more and 8 or less.

The focused ion beam generator 120 generates ions (plasma ions) from neutral gas in a vacuum chamber, focuses the generated ions, and emits them to the sputtering target 110 as a linear focused ion beam. The focal type ion beam generator 120 may use, for example, an end hole ion source. The endhole ion source can form an acceleration loop therein, including poles, electrodes, and the like. When a positive high voltage is applied to the electrode, internal electrons or plasma electrons inside the vacuum chamber move toward the counter electrode in the acceleration loop space of the end hole ion source. At this time, the internal electrons or plasma electrons receive a force by the magnetic field generated between the electrodes and move at high speed along the closed loop. Electrons in the closed loop ionize the neutral gas in the loop, and positive ions among the ionized plasma ions move toward the cathode where the sputtering target 110 is located by the potential difference between the electrode and the sputtering target 110 to the sputtering target 110. They collide at high speed, and as a result, the sample surface atoms can be scraped off.

The focal type ion beam generator 120 outputs the sputtering target 110 as a linear focal type ion beam, but outputs the ion beam so that the angle of incidence is 60 degrees or more and 85 degrees or less based on a plane perpendicular to the target surface on which the ion beam is incident. do. In the focal type ion beam generator 120 of the present invention, the ion beam is output so that the angle of incidence is 60 degrees or more and 85 degrees or less based on a plane perpendicular to the target surface on which the ion beam is incident, so that a relatively high sputtering yield (yield) ) can be obtained, and there is an advantage of coating a large amount of target material with the same power.

When the angle of incidence is 60 degrees or less and the angle of incidence is 85 degrees or more with respect to the plane perpendicular to the target surface on which the ion beam is incident, insufficient energy to rip off the target surface atoms is incident on the target surface, and the sputtering yield is reduced. decreases sharply;

The shutter 130 blocks the deposition material emitted from the sputtering target 110 . The shutter 130 may be configured in the form of a plate. The shutter 130 may be inserted or separated between the sputtering target 110 and the transfer tray 150 by the shutter controller. The shutter controller may include a motor that rotates the shutter 130 . The shutter controller receives a shutter insertion signal or a shutter release signal from the main controller. For example, the main controller may transmit a shutter insertion signal or a shutter release signal to the shutter controller based on the type of material emitted from the sputtering target 110 .

The shielding mask 140 is disposed between the shutter 130 and the transfer tray 150 , and a slit 141 through which the deposition material passes is formed. The shielding mask 140 having a slit 141 through which the deposition material passes is disposed between the shutter 130 and the transfer tray 150 , so that impurities are primarily filtered by the shutter 130 and secondarily, the shielding mask 140 is ), so that only the deposition material can be uniformly deposited (coated) on a plurality of polarization gratings.

The transfer tray 150 transfers the substrate on which the polarization grating is formed. The transfer tray 150 is driven in a predetermined direction by a driving unit.

2 is an exemplary view for explaining a polarization grating coated with a deposition material by an ion beam sputtering apparatus for manufacturing a polarizing filter according to the present invention, and FIG. 3 is an ion beam sputtering apparatus for manufacturing a polarizing filter according to the present invention. This is the second embodiment.

As shown in FIG. 2 , a deposition (coating) material emitted from the sputtering target is deposited on the polarization grating to form a coating film. As the sputtering process progresses, the outer diameter of the sputtering target 110 gradually decreases, and the focal position of the ion beam output to the sputtering target 110 and the deposition (coating) material incident on the polarization grating after sputtering from the sputtering target 110 The angle of incidence also changes. Since the transmission and polarization quality of the polarization grating varies according to the incident angle (φ) of the deposition (coating) material, it is necessary to compensate the deposition (coating) material incidence angle (φ) to compensate for this.

Referring to FIG. 3 , the transfer tray 150 may be controlled by the main controller so that the substrate on which the polarization grating is formed is transferred at an angle of 10 degrees or more and 20 degrees or less with respect to the horizontal axis. Since the incident angle φ of the deposition (coating) material varies in the range of 20 degrees to 40 degrees, it is preferable to compensate the transfer tray 150 with an inclination of 10 degrees or more and 20 degrees or less.

The present invention has been described above based on several embodiments, which are intended to illustrate the present invention. Those skilled in the art will be able to change or modify the above embodiment in other forms while maintaining the technical idea. However, since the scope of the present application is defined by the claims below, such variations or modifications may be construed as being included in the scope of the claims below.

110: sputtering target 120: focal type ion beam generator
130: shutter 140: shielding mask
141: slit 150: transport tray

Claims (4)

a cylindrical sputtering target in which an ion beam collides with a surface to emit a sputtered deposition material;
Plasma ions are generated and the generated ions are focused and outputted to the cylindrical sputtering target as a linear focused ion beam. a focal-type ion beam generator that outputs;
a transfer tray for transferring the substrate on which the polarization grating is formed;
a driving unit for driving the transfer tray; and
and a shielding mask disposed between the focus-type ion beam generator and the transfer tray and having a slit through which the deposition material passes. The method of claim 1,
a shutter blocking the deposition material emitted from the sputtering target;
a shutter control unit for inserting or releasing the shutter; and
The ion beam sputtering apparatus for manufacturing a polarizing filter further comprising a main control unit for transmitting a shutter insertion signal or a shutter departure signal to the shutter control unit. The method of claim 2, wherein the transport tray is
An ion beam sputtering apparatus for manufacturing a polarizing filter, controlled by the main control unit so that the substrate on which the polarization grating is formed with respect to the horizontal axis is transferred at an angle of 10 degrees or more and 20 degrees or less. The method of claim 1,
The sputtering target is
An ion beam sputtering apparatus for manufacturing a polarizing filter, characterized in that it has a cylindrical or flat shape attached to a cylindrical or polygonal column having more than 4 sides and not more than 8 sides.

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