JP2017057487A - Ion beam sputtering device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an ion beam sputtering device that is mounted with two ion sources to achieve film production by either of two-dimensional sputtering and ion beam assist sputtering, and can have an angle of incidence of assist ions optionally set without any decrease in film production speed in the ion beam assist sputtering.SOLUTION: An ion beam sputtering device 10 has two ion sources 1, 1 pivoted rotatably by a rotary introduction machine 13 respectively to have irradiation directions of ion beams changed, and can perform sputtering by irradiating a sputter target Twith an ion beam IBwith the ion source 1 held horizontally and also irradiate a substrate W with an ion beam IBfor assist at desired angles θ, θwith the ion source inclined without tilting the substrate W.SELECTED DRAWING: Figure 3

Description

  The present invention relates to an ion beam sputtering apparatus equipped with a plurality of ion sources, and more particularly to an apparatus for forming a film using an ion beam assist method.

The ion beam sputtering method, which is one of the physical vapor deposition (PVD) methods, irradiates a sputter target (sputter source), which is a film material, scatters the sputtered particles and deposits them on the workpiece to form a film. To do. Although the ion beam sputtering method has a low film forming speed, it is widely used in the manufacture of semiconductor devices and the like as a film forming method capable of adjusting the film thickness at the level of one to several atomic films, and in particular, a Co / Pd multilayer film or a CrPt film. ₃ is suitable for formation of a magnetic film such as ordered alloy film. Furthermore, by using an ion beam sputtering apparatus equipped with two or more ion sources (ion guns), two or more types of sputtering targets are simultaneously irradiated with an ion beam (multi-source sputtering), and the composition of the sputtering target material It is possible to form an alloy film having a desired composition regardless of the above (for example, Patent Documents 1 and 2). Also, the ordered alloy film and the like can be efficiently formed by irradiating ion beams alternately with two ion sources. As such a film forming apparatus, for example, an ion beam sputtering apparatus 100 shown in FIG. 6 includes two ion sources 101 and 101, a substrate stage 31 that holds a substrate W that is an object to be processed, and a plate-like sputtering target T _6. , T ₇ are respectively provided with target holders 41, 41 and the like. In FIG. 6 and FIG. 7 to be described later, only the center of the ion beam (ion beam bundle) is indicated by a broken line.

In the ion beam sputtering apparatus 100, two ion sources 101, 101 are directed to a processing chamber (vacuum processing chamber, vacuum chamber) with the ion beam take-out ports facing the sputtering targets T ₆ , T ₇ mounted on the target holders 41, 41. It is installed through a hole (window) formed in the (chamber) 102. In addition, the substrate rotation mechanism 103 includes a rotation unit 132 such as a motor and a rectilinear rotation introduction unit 133 that transmits the rotation motion of the rotation unit 132 to the substrate stage 31. With such a configuration, the sputtered particles adhere to the surface of the substrate W while rotating (spinning) in the plane of the film formation surface (surface), so that a film is uniformly formed in the surface. Further, the substrate rotation mechanism 103 can adjust the distance between the sputtering targets T ₆ and T ₇ and the substrate W by the substrate stage 31 being moved up and down by the rotating means 132 and the rectilinear rotation introduction machine 133. In addition, a base 142 to which the target holder 41 is fixed is installed in the processing chamber 102 by a rotation introducing device 143 so as to be rotatable about a rotation axis (represented by a cross in the drawing) perpendicular to the paper surface, and sputter targets T ₆ , T _7. Can be arbitrarily set to the incident angles θ _T6 and θ _T7 of the ion beam. With such a configuration, the ion beam sputtering apparatus 100 allows the ion sources 101 and 101 to emit the ion beams IB ₆ and IB _{7 according} to the individual ion species (gas species), the acceleration voltage, the incident angle, and the like as the sputtering targets T ₆ and T _7. The alloy film having a desired composition can be formed on the surface of the substrate W. It is also possible to increase the film forming speed by attaching sputter targets made of the same material to the two target holders 41 and 41 and simultaneously irradiating each target with an ion beam.

Alternatively, when ion beam sputtering is performed with one or a plurality of ion sources, another ion source forms a film while irradiating the substrate with an ion beam directly at a low output, thereby achieving desired characteristics. A film can be formed on the substrate surface (ion beam assist method, for example, Patent Documents 3 and 4). As shown in FIG. 7, an ion beam sputtering apparatus 100A capable of the ion beam assist method includes two ion sources 101 and 101A, and one ion source 101 faces the sputtering target T ₈ and the other ion source. 101A is installed to irradiate ion beams IB ₈ and IB _a toward the substrate stage 31, respectively. In the ion beam assist method, in addition to the ion species (gas species) of the ion beam (assist ion beam) IB _a irradiating the substrate W and the acceleration voltage, the incident angle θ _a to the substrate W affects the film characteristics. To do. Therefore, the substrate rotation mechanism 103A is not only to rotate the substrate stage 31 (substrate W), it is possible to arbitrarily set the incident angle theta _a of the ion beam IB _a of the substrate W is inclined at a desired angle . In addition, a target holder unit 104A in which the target holder 41 is fixed to each of the four side surfaces of the base 142A of a regular square pole so that a maximum of four sputter targets T can be mounted is A central axis of 142A is set as a rotation axis (represented by a cross in the figure) and is rotatably installed in the processing chamber 102A. With such a structure, the ion beam sputtering apparatus 100A switches the sputtering target T irradiated with the ion beam by rotating the base 142A in 90 ° increments without opening the processing chamber 102A, and forms films of different materials. Can be stacked.

Japanese Patent Publication No. 7-74440 Japanese Patent No. 2713481 Japanese Patent No. 2744409 JP 2001-237136 A JP 2011-168828 A

In general, in an ion beam sputtering apparatus, it is preferable to form a film by scattering the sputtered particles from below with the surface of the substrate W facing downward as shown in FIG. This is because sputtered particles adhere to the wall surface of the processing chamber 102, the substrate stage 31 and the like during film formation, and thus the flakes (metal flakes) deposited and peeled off and dropped to contaminate the substrate W. It is for preventing. However, in the ion beam sputtering apparatus 100A corresponding to an ion beam assist method, as shown in FIG. 7, it is necessary to incline the surface of the substrate W in order to set the incident angle theta _a of the ion beam IB _a. As a result, depending on the inclination angle of the substrate W, the substrate W may be contaminated with flakes. Further, in the ion beam sputtering apparatus 100A, in order to rotate the substrate stage 31 in an inclined state, the direction of the vertical rotation shaft of the rotation introducing machine 133A is rotated within the processing chamber 102A by a rotation transmission means such as a bevel gear (gear). (Not shown). Flakes adhering to the rotation transmitting means of the substrate rotation mechanism 103A is easily especially peeled off when driving (when setting the incident angle theta _a), since the rotation transmitting means is provided on the upper side further vicinity of the substrate W, the substrate W may be contaminated.

In the ion beam sputtering method, the direction in which the amount of sputtered particles scattered from the sputter target T is large depending on the incident angle θ _T (θ _T6 , θ _T7 ) of the ion beam to the sputter target T (T ₆ , T ₇ ). It is preferable that the normal line of the surface of the substrate W is closer in this direction. For example, in the ion beam sputtering apparatus 100A, as shown in FIG. 7, the ion source 101 incidents the ion beam IB ₈ horizontally (0 °) on the sputtering target T ₈ inclined obliquely upward 45 °, and the incident angle θ _{T8 is set} to 45 °, and the sputtered particles are mainly scattered right above. However, depending on the incident angle theta _a of the assist ion beam for tilting the the substrate W, the deposition rate can occur the influence of such a decrease. In the ion beam sputtering apparatus 100, it is difficult to form an alloy film having a desired composition depending on the incident angles θ _T6 and θ _T7 of the respective ion beams to the two sputtering targets T ₆ and T ₇ .

  Further, the ion beam sputtering apparatus 100 is limited to multi-element (binary) sputtering, and the ion beam sputtering apparatus 100A is limited to ion beam-assisted sputtering. In other words, in order to enable both binary sputtering and ion beam assisted sputtering with a single ion beam sputtering apparatus, both have two ion sources operating simultaneously. It is necessary to mount an ion source that is higher than a stand, resulting in an expensive film forming apparatus.

  Further, the rotary (drum-type) target holder unit 104A capable of switching the sputter target T has sputter particles formed by setting the angle of the ion beam irradiation surface (surface) of the adjacent sputter targets T and T to 270 ° or more. Is prevented from adhering to and contaminating the sputter target T not irradiated with the ion beam. Therefore, the target holder unit 104A (base 142A) is formed in a regular quadrangular prism, a regular triangular prism, or a cylinder, and a maximum of four sputtering targets T (three in the case of a regular triangular prism) can be mounted. However, for example, in the manufacture of MRAM (Magneto-resistive Random Access Memory), two or more magnetic films having different magnetic characteristics and a non-magnetic intermediate layer and protective film are mounted. In order to form these films continuously, the number of sputter targets mounted (the type of film material) is insufficient.

  Alternatively, the target holder unit is formed into a regular polygonal column, a regular polygonal frustum, or a dish having a regular polygonal frustum inside, and a sputter target is mounted on each side surface to cover the sputter target that is not irradiated with an ion beam. It can also be set as the structure provided with a shielding board (sputter particle adhesion board) (for example, patent document 5). However, as the number of sputter targets to be installed increases, the diameter of the target holder unit increases. In particular, in multi-source sputtering, in order to mount a plurality of such target holder units, it is necessary to form a large processing chamber. Larger equipment.

  The present invention has been made in view of the above-mentioned problems, and is capable of preventing ion film degradation and contamination of a target object while arbitrarily setting an incident angle of an ion beam to a sputtering target or target object. It is an object to provide a beam sputtering apparatus. Furthermore, an object of the present invention is to provide an ion beam sputtering apparatus capable of forming both binary sputtering and ion beam assisted sputtering as long as at least two ion sources are mounted. Another object of the present invention is to provide an ion beam sputtering apparatus capable of mounting a large number of sputter targets that can be switched while suppressing expansion of the processing chamber.

  That is, an ion beam sputtering apparatus according to the present invention includes a work stage that holds a target object on which a film is formed, and a plurality of ions that irradiate the target object or a sputtering target that is a film material with an ion beam. And a plurality of target holders on which the sputter target is mounted, wherein at least one of the plurality of ion sources has an incident angle with respect to at least one of the object to be processed and the sputter target. It is characterized by being supported by a rotation mechanism so that the ion beam can be irradiated while being changed. Furthermore, it is preferable that the rotation mechanism supports the ion source so that an ion beam can be applied to both the object to be processed and the sputter target.

  With this configuration, the ion beam sputtering apparatus can set the incident angle of the assist ion beam without changing the direction of the object to be processed, and can irradiate each ion beam for sputtering and assist with the same ion source.

  The ion beam sputtering apparatus according to the present invention may include a target holder unit including a plurality of target holders arranged in a linear direction for each ion source, and shields the sputter target mounted on the target holder from scattered sputtered particles. A guide that includes both of the sputtered particle prevention plates, and the target holder unit is reciprocally movable along the linear direction so that any one of the plurality of sputter targets that are mounted is disposed on the ray of the ion beam. Means are provided.

  With this configuration, the ion beam sputtering apparatus can be equipped with a large number of sputtering targets.

  The ion beam sputtering apparatus according to the present invention can set the incident angle of each ion beam to a plurality of sputter targets, or to the sputter target and the object to be processed, to a desired value. With the source, both film formation methods of binary sputtering and ion beam assisted sputtering are possible. In addition, the ion beam sputtering apparatus according to the present invention includes a target holder unit that moves linearly, so that expansion of the processing chamber can be limited to a limited number while mounting a large number of sputtering targets.

It is a side view of the ion beam sputtering apparatus which concerns on 1st Embodiment of this invention, and is a schematic diagram explaining binary sputtering. It is an external view of the principal part of the ion beam sputtering apparatus shown in FIG. 1, and is a schematic diagram illustrating the arrangement of the ion source and the structure of the target holder unit. FIG. 2 is a side view of the ion beam sputtering apparatus shown in FIG. 1 and is a schematic diagram for explaining ion beam assisted sputtering. It is a side view of the ion beam sputtering apparatus which concerns on 2nd Embodiment of this invention, and is a schematic diagram explaining binary sputtering. It is a side view of the ion beam sputtering apparatus which concerns on 3rd Embodiment of this invention, and is a schematic diagram explaining ion beam assist sputtering. It is a side view of the conventional ion beam sputtering apparatus which performs binary sputtering. It is a side view of the conventional ion beam sputtering apparatus which performs ion beam assist sputtering.

[First Embodiment: Ion Beam Sputtering Apparatus]
The ion beam sputtering apparatus according to the first embodiment of the present invention will be described in detail with reference to FIGS.
As shown in FIG. 1, an ion beam sputtering apparatus 10 according to the first embodiment includes a processing chamber (vacuum processing chamber, chamber) 2, two ion sources 1 and 1 that irradiate an ion beam, and a substrate (covered). A plurality of targets on which a substrate rotation mechanism 3 including a substrate stage (work stage) 31 for holding the processing body W and a sputtering target T (one sputter target T ₁ and T ₂ are shown in FIG. 1) are mounted. Two target trains (target holder units) 4, 4 provided with a holder 41 (see FIG. 2), a sputtered particle deposition plate 44 covering the target trains 4, 4, and the processing chamber 2 are in a vacuum (depressurized) state. Between the exhaust system 5 for exhausting, the spare chamber (not shown) connected to the processing chamber 2 and the target storage chambers 21a and 21b (see FIG. 2), and the substrate chamber 31 in the processing chamber 2 and the spare chamber. Comprising conveying system for loading and unloading the plate W with (not shown), a cooling mechanism for supplying refrigerant (cooling water) for cooling the ion source 1, 1 and a sputter target T and (not shown), a. Accordingly, the ion beam sputtering apparatus 10 includes two ion sources 1 and two target trains 4 and has a substantially symmetrical structure in a side view as shown in FIG. Further, the ion beam sputtering apparatus 10 includes a power source (PS) 11 for extracting an ion beam from an ion species (gas) for each ion source 1, and a mass flow controller (MFC) that supplies Ar gas or the like as an ion species to the ion source 1. 12 and a rotation introduction machine (rotation mechanism) 13 and a support member 14 for fixing the ion source 1 to the rotation introduction machine 13.

(Processing room)
The processing chamber 2 has the same structure as that applied to a vacuum processing apparatus such as a known ion beam sputtering apparatus (see FIGS. 6 and 7), and includes a vacuum pump 52 and an automatic pressure controller (APC). ) The pressure is controlled to a desired pressure (vacuum state) by the exhaust system 5 including 51 and the like, and is maintained. In addition, a spare chamber is connected to the processing chamber 2 with an openable / closable shutter (not shown) in order to suppress changes in the vacuum state and atmosphere of the processing chamber 2 when the substrate W is taken in and out. The pressure of the chamber is controlled by an exhaust system different from the exhaust system 5. Further, target storage chambers 21 a and 21 b for moving the target trains 4 and 4 from the processing chamber 2 are connected to the processing chamber 2 so as to protrude to both sides in the width direction (x direction) of the ion beam sputtering apparatus 10. (See FIG. 2). The processing chamber 2 has an outer shape (excluding the target storage chambers 21a and 21b and the spare chamber) shown in FIG. 1 as a rectangular parallelepiped or a cylinder in a side view, but is not limited thereto, and is formed in a dome (hemisphere) shape, for example. May be.

(Ion source)
The ion source 1 irradiates the ion beam IB ₁ , IB ₂ (collectively, ion beam IB) toward the sputtering target T or the substrate W. The ion source 1 is an ion source mounted on a known ion beam sputtering apparatus, and can apply a Kaufman type (filament), a hollow cathode type, an RF type, a bucket type, a duoplasmatron type, and the like (output ( Acceleration voltage), beam diameter, etc. can be set for both ion beam sputtering and assist ion beam. The ion source 1 is entirely housed in a casing and has a cylindrical shape or prism as shown in FIG. 2, and irradiates an ion beam IB along the axial direction of the column from one bottom surface (front surface). . In this specification, the axial direction of this column, that is, the ray direction of the ion beam is represented as the direction of the ion source. For example, the two ion sources 1 and 1 shown in FIG. 1 are in a horizontal state. In FIG. 2, the lower ion source 1 is in a horizontal state, and the upper ion source 1 is inclined at an elevation angle. In FIG. 1 and FIGS. 3, 4, and 5 to be described later, only the center of the ion beam IB (ion beam bundle) is represented by a broken line.

The ion source 1 is installed in the processing chamber 2 with the front surface facing the center in the y direction, and supplies current, gas, cooling water, and the like to the bottom surface (rear surface) facing the side wall of the other processing chamber 2. A flexible tube is connected. 1-3, the two pipe | tubes 11a and 12a (refer FIG. 2) connected to the power supply 11 and the massflow controller 12 for every ion source 1 are shown, and others are abbreviate | omitted. These pipes 11a and 12a are connected to a power source 11 provided outside (atmosphere side) of the processing chamber 2 via current introduction terminals and gas introduction terminals that pass through the flanges 2f ₁ and 2f ₂ (see FIG. 1). It connects to the mass flow controller 12, a cooling mechanism, etc. Various introduction terminals are components generally used in vacuum processing apparatuses, and are fixed to holes (windows) formed in the side wall of the processing chamber 2 by flanges 2f ₁ and 2f ₂ . The mass flow controller 12 switches the rare gas such as Ar, Kr, Xe, etc. according to the material of the sputtering target T to which the ion source 1 irradiates the ion beam or according to the specification of the assist ion beam to the substrate W. Supply to source 1. The power supply 11 also sets the output (acceleration voltage) according to the material of the sputtering target T and the specification of the assist ion beam to the substrate W.

Further, the ion source 1 is pivotally supported by the processing chamber 2 so that its direction can be changed vertically (rotated) by a rotation introducing device 13 and a support member 14 so that the irradiation direction of the ion beam can be changed. . As shown in FIG. 2, the rotation introducing machine 13 processes the rotational movement on the yz plane having the x direction as the rotation axis through the flanges 2 f ₄ and 2 f ₅ fixed to the side wall (not shown) of the processing chamber 2. It is transmitted from outside the chamber 2. The support member 14 includes an annular clasp (clamp) that grips the body (housing) of the ion source 1 at the rear, and an L-shaped arm that is connected to the shaft (rotary shaft) of the rotation introducing machine 13. Consists of. The arm of the support member 14 extends from the shaft of the rotation introducing device 13 in the width direction (x direction) of the ion beam sputtering apparatus 10, bends 90 ° above the ion source 1, and connects to the clasp. The rotation introducing machine 13 is generally used in a vacuum processing apparatus and may be anything that can transmit the rotational motion of the rotating shaft along the transmission direction. Further, the rotation motion transmitted by the rotation introducing machine 13 may be either automatic or manual. A rotating means (not shown) such as a motor or a handle is provided outside the processing chamber 2 and connected to the rotation introducing machine 13. To do.

In the ion beam sputtering apparatus 10 according to the present embodiment, the rotation introducing machine 13 includes the ion beam IB at the center of the surface of the sputtering target T when the ion source 1 is horizontal (irradiates the ion beam IB horizontally (0 °)). There is set at a position that can be entered, and the ion source 1 is inclined incident angle theta _a to the substrate W with the desired range. Here, by arranging the rotation axis closer to the rear part of the ion source 1 by the support member 14, the ion beam IB _a can be sputtered by the sputter target T (target train) even if the elevation angle (90 ° −θ _a ) of the ion source 1 is small. can be incident on the substrate W without being blocked by the 4), whereas, by placing above the ion source 1, the substrate W without too deflection rays of the ion beam IB _a is upward when a larger elevation angle (See FIG. 3). Further, it is preferable that the support member 14 and the rotation introducing machine 13 are not disposed above the substrate W (substrate stage 31) so that the accumulated flakes do not contaminate the substrate W. Here, the ion source 1 is supported by the processing chamber 2 at only one position of the rotary introducer 13 via one arm of the L-shaped support member 14, but the shape of the support member 14 and the ion The part to be attached to the source 1 is designed according to the position of the rotating shaft (arrangement of the rotation introducing machine 13), the weight of the ion source 1, and the like. For example, the arm of the support member 14 is formed in a T shape extending to both sides in the x direction, one is connected to the rotation introducing machine 13, and the other is rotatably supported by a column provided in the processing chamber 2. It is good (not shown).

(Substrate rotation mechanism)
The substrate rotation mechanism 3 is mounted on a known ion beam sputtering apparatus, and can have a configuration similar to that which can set the height (z direction) position of the substrate W in particular. That is, the substrate rotation mechanism 3 includes a substrate stage 31 that holds the substrate W, a rotation means 32 such as a motor, and a linear rotation introduction machine (straight advance mechanism) 33 that transmits the rotation motion of the rotation means 32 to the substrate stage 31. The substrate stage 31 has a structure capable of holding the substrate W on the surface (the surface on which the substrate W is installed, the lower surface), and has a heater built in the vicinity of the surface to heat the substrate W to a desired temperature, water cooling or liquid nitrogen. For example, the substrate W may be cooled. The rectilinear rotation introduction machine 33 is generally applied to a vacuum processing apparatus similarly to the rotation introduction machine 13 of the ion source 1, and performs rotational movement and linear movement in the rotation axis direction from the outside of the processing chamber 2 to the inside. It is transmitted through a flange 2f ₃ fixed to the wall surface (ceiling) of the processing chamber 2. The range of raising and lowering of the substrate stage 31 by the rectilinear rotation introduction machine 33 can be set to a desired distance from the sputtering targets T ₁ and T ₂ (target train 4) to the substrate W. It is only necessary that the substrate W can be disposed on the ray of the ion beam IB _a set at the incident angle θ _a (see FIG. 3). With such a configuration, the substrate rotation mechanism 3 arranges the substrate W at a desired height position, and rotates the substrate W within the plane of the film formation surface (surface) during film formation (rotation) as necessary. ). Therefore, the substrate W is irradiated with the ion beam IB _a regardless of the incident angle θ _a, and sputtered particles adhere while rotating, so that a film is uniformly formed on the surface.

(Target train)
The target train 4 is formed by fixing the same number of target holders 41 to a base 42 in order to mount a plurality of sputter targets T. The base 42 is formed in a substantially triangular prism having a right isosceles triangle in a side view (see FIG. 1) in the ion beam sputtering apparatus 10, and the axis of the column body is horizontal and perpendicular to the ion beam, that is, the ion beam sputtering apparatus 10. Extending in the width direction (x direction, direction perpendicular to the paper surface of FIG. 1). Then, the target holder 41 is fixed on the slope of the base 42 so that the sputter target T is mounted with the surface inclined obliquely upward 45 °, and a plurality of them are arranged in a line along the extending direction. . In FIG. 2, the target train 4 comprises four target holders 41 for the sake of simplicity. Further, the sputtering target T is not attached to the leftmost target holder 41 in the target train 4. The interval between the target holders 41 and 41 (sputter targets T and T) adjacent to each other on the base 42 is such that the sputter target T is not irradiated with the ion beam IB, and the sputtered particle deposition plate 44 that covers the sputter target T is provided. It is assumed that the sputtered particles are scattered from the gaps so as not to adhere. Further, the target train 4 (base 42) may extend from the processing chamber 2 and extend long depending on the number of sputter targets T to be mounted.

The target holder 41 can have the same configuration as that mounted on a known ion beam sputtering apparatus (see, for example, FIGS. 6 and 7). That is, the target holder 41 is made of stainless steel or the like in a plate shape slightly larger than the sputter target T, and the sputter target T is fixed to the surface with screws or the like (not shown), and cooled by circulating water inside. . Further, a flow path of cooling water is also provided on the base 42 and the flow paths of the four target holders 41 are connected. Alternatively, the target train 4 may be integrally formed with a base 42 and a plurality of target holders 41 fixed to the base 42. In the ion beam sputtering apparatus 10, the two target trains 4, 4 are provided with the vertical surfaces of the respective bases 42 facing and close to each other, so that the ion sources 1, 1 are the target trains 4, 4. It faces the sputter target T (T ₁ , T ₂ ) mounted on each.

Further, the ion beam sputtering apparatus 10 has two rails (guide means) 42r on the lower surface so that the target train 4 can be reciprocated in the extending direction (x direction) of the base 42. 42r, and is fitted into a groove formed on the upper surface of the guide portion 43 fixed to the floor surface of the processing chamber 2. In the ion beam sputtering apparatus 10, the guide unit 43 is shared by the two target trains 4 and 4. With such a structure, the two target trains 4 and 4 are individually moved so that the desired sputter target T (T ₁ , T ₂ ) is switched to face each ion source 1.

(Spatter particle prevention plate)
The sputtered particle deposition preventing plate 44 is provided so as to cover the sputter target T on the target train 4 that does not face the ion source 1 in the processing chamber 2. The sputtered particle prevention plate 44 is a flat plate inclined by 45 ° according to the sputter target T, and a hole is formed in accordance with the shape of the sputter target T facing the ion source 1 so as not to contact the sputter target T. Further, even if sputter particles enter, a gap is provided so as not to reach the coated sputter target T, and is fixed to the guide portion 43 or the processing chamber 2. In FIG. 2, the sputtered particle deposition plate 44 has holes formed so as to open the entire surface of the sputter target T facing the ion source 1, but covers the sputter target T other than this and covers the ion beam IB and sputter. The present invention is not limited to this as long as the sputtered particles scattered from the target T are not blocked. Here, the sputtered particle preventing plate 44 is formed of a single plate bent at 90 ° in a mountain shape so as to be shared by the two target trains 4 and 4. As described above, since the two sputter targets T ₁ and T ₂ facing the ion sources 1 and 1 are mounted adjacent to each other at an angle of 270 ° by the target trains 4 and 4, even if the positions are close to each other. The sputter target T that is not easily contaminated by the sputter particles and is not facing the ion source 1 is also prevented from adhering by the sputter particle deposition plate 44.

  In the ion beam sputtering apparatus 10, if the target train 4 does not fit in the processing chamber 2 when the sputtering targets T and T mounted on both ends of the target train 4 are opposed to the ion source 1, The target storage chambers 21a and 21b in which the protruding portions are stored project on both sides of the processing chamber 2 and are connected. Therefore, the guide part 43 is extended over the entire target storage chambers 21a and 21b with the processing chamber 2 interposed therebetween. By adopting such a configuration, the ion beam sputtering apparatus 10 can mount a large number of sputtering targets T and make them all face the ion source 1 one by one without expanding the processing chamber 2 as a whole. . The moving means of the target train 4 is not particularly defined. For example, a rack along the moving (extending) direction is provided on the lower surface of the base 42, and the pinion provided in the guide portion 43 is connected to the processing chamber 2 via the rotation introducing machine. It can be moved by rotating means such as a motor and a handle provided outside (not shown). Furthermore, one of the target storage chambers 21a and 21b is provided with a length capable of storing the entire target train 4, and includes a shutter that can be opened and closed between the processing chamber 2 and the spare chamber of the substrate W, An exhaust system different from the exhaust system 5 may be provided. By setting it as such a structure, the sputtering target T with which the target train 4 is mounted | worn can be replaced | exchanged easily.

(Dual sputtering)
An example of a procedure for forming an alloy film having a desired composition by binary sputtering using the ion beam sputtering apparatus 10 according to the first embodiment will be described with reference to FIG. In the ion beam sputtering apparatus 10, the orientation is set so that the ion sources 1 and 1 are horizontal. Further, the target trains 4 and 4 are moved so that the sputtering targets T ₁ and T ₂ made of different metals as the material of the alloy film are arranged on the rays of the ion beams IB ₁ and IB ₂ . Here, the incident angles θ _T1 and θ _T2 of the ion beam to the sputtering targets T ₁ and T ₂ are set to 45 °, respectively. On the other hand, when the substrate W is transported from the preliminary chamber to the processing chamber 2 and is held by the substrate stage 31, the rotating means 32 is driven to raise and lower the substrate stage 31 (position of the substrate W and the sputtering targets T ₁ and T ₂ ). Set the distance. In this specification, the incident angle of the ion beam refers to an angle with the normal line of the ion beam irradiation surface (front surface) of the sputtering target T or the substrate W.

Then, an operating gas such as Ar or Kr is introduced into each of the ion sources 1 and 1 by the mass flow controller 12, and the processing chamber 2 is adjusted to a pressure reduced to about 10 ⁻⁴ Torr by the exhaust system 5. The rotation means 32 is driven to rotate the substrate stage 31, and the gas supplied from the mass flow controllers 12, 12 is switched as necessary, the power supplies 11, 11 are turned on, and the ion beam IB ₁ , IB ₂ is irradiated to the center of the surface of the sputtering targets T ₁ and T ₂ . Since the ion beams IB ₁ and IB ₂ are horizontal, the ion beam bundle is inclined at 45 ° with respect to the surface of the sputter target T ₁ or T ₂ , and the ions collide with each other, so that the sputter target T ₁ or T ₂ is Scattered from the surface in the form of particles (sputtered particles) (sputtering). The sputtered particles tend to mainly scatter in a symmetric direction with respect to the ion beams IB ₁ and IB _{2 with} respect to the normal line of the sputtering targets T ₁ and T _2. An alloy film made of each metal of the sputter targets T ₁ and T ₂ is formed on the surface of the substrate W rotating by the mechanism 3. At this time, the composition of the alloy film can be changed by setting the ion species and acceleration voltage of the ion beam irradiated to each of the sputtering targets T ₁ and T ₂ to be different. Alternatively, the sputter targets T made of the same material can be mounted on the target trains 4 and 4, and each can be irradiated with the ion beam IB at the same time to increase the film forming speed.

When a film having a desired thickness is formed, irradiation with the ion beams IB ₁ and IB ₂ is stopped. Then, the rotation of the substrate stage 31 is stopped, moved to the original height position, and the substrate W is carried out. Or when laminating | stacking the film | membrane of a different material, the target trains 4 and 4 are moved, respectively, the desired sputtering target T is made to oppose the ion source 1, and the same process is performed.

Further, by irradiating the ion beams IB ₁ and IB ₂ alternately from the two ion sources 1 and 1 for a predetermined time, 1 to several atoms of two kinds of metals that are the materials of the sputtering targets T ₁ and T _2. A multilayer film or an ordered alloy film in which films are alternately stacked can be formed. The ordered alloy film or the like can be formed by one ion source 101 while switching the sputtering target T by, for example, an ion beam sputtering apparatus 100A (see FIG. 7) having a rotary target holder unit 104A. In addition, it is difficult to frequently switch the gas type of the ion source 101 according to the material of the sputtering target T.

(Ion beam assisted sputtering)
An example of a procedure for forming a film by the ion beam assist method using the ion beam sputtering apparatus 10 will be described with reference to FIG. In the ion beam sputtering apparatus 10, one (left side) of the ion sources 1, 1 is rotated horizontally (0 °) and the other (right side) is rotated so as to have an incident angle θ _a (θ _a1 , θ _a2 ) with respect to the substrate W. At the same time, the angle of inclination is inclined by (90 ° −θ _a ), and the respective directions are set. Further, the left target train 4 is moved so that the desired sputter target T ₃ faces the ion source 1. Then, after the substrate W is transported from the preliminary chamber to the processing chamber 2 and held by the substrate stage 31, the rotating means 32 is driven to raise and lower the substrate stage 31, and the position of the substrate W is irradiated from the ion source 1 on the right side. set on a ray of that ion beam IB _a. As shown in FIG. 3, the height position of the ion beam IB _a reaching the substrate W differs depending on the incident angles θ _a1 and θ _{a2 to} the substrate W.

Similar to the binary sputtering, the processing chamber 2 is adjusted to an operating gas atmosphere, and the substrate stage 31 is rotated. Then, the ion beam IB _a is irradiated from the right ion source 1 to the substrate W, and the ion beam IB ₃ is irradiated from the left ion source 1 to the sputtering target T ₃ . When a film having a desired thickness is formed, irradiation of the ion beams IB ₃ and IB _a is stopped. Then, the rotation of the substrate stage 31 is stopped, moved to the original height position, and the substrate W is carried out.

The ion beam sputtering apparatus 10 can also irradiate the substrate W with the ion beam IB _a by changing the direction of the left ion source 1. The ion source 1 on the side facing the target train 4 on which the sputter target T of the desired material is mounted may irradiate the ion beam IB for sputtering. In addition, the ion beam sputtering apparatus 10 can operate only one ion source 1 to form a film by normal ion beam sputtering (single unit sputtering).

(Modification)
The sputtered particle prevention plate 44 is not limited to a plate parallel to the sputter target T, and for example, a wall protruding vertically (yz direction) is provided between the target holders 41 and 41 on the slope of the base 42. (Not shown). The wall is designed to a height that prevents the scattering of sputtered particles on the adjacent sputter target T. In the case of such a configuration, the target storage chambers 21 a and 21 b are formed to have a size that can be stored including the wall fixed to the base 42.

  In the ion beam sputtering apparatus according to the present embodiment, the number of types of sputtering targets to be mounted is small, and if it is about 7 or 8 or less per ion source 1, a dish-shaped rotary type is used instead of each of the target trains 4 and 4. A target holder may be provided. Further, when the number of sputter targets to be mounted is small and four or less may be used in total, for example, one drum-type target holder unit 104A shown in FIG. Further, the ion beam sputtering apparatus according to the present invention may be used exclusively for sputtering by fixing one of the two ion sources horizontally (the ion source 101 on the left side in FIG. 7).

  As described above, the ion beam sputtering apparatus according to the first embodiment of the present invention is equipped with two ion sources by providing an extremely simple rotation mechanism, and performs two-way sputtering and ion beam-assisted sputtering. The film can be formed by both, and the cost of the apparatus can be reduced. In addition, the incident angle of the assist ion beam can be set arbitrarily with the surface of the substrate facing directly below (horizontal), the substrate is hardly contaminated, and the angle with respect to the sputter target does not change, so the film forming speed is high. It does not decline. Furthermore, by providing a target train which is a linear movement type target holder unit, it is possible to continuously form and stack various types of films on the substrate.

[Second Embodiment: Ion Beam Sputtering Apparatus]
The ion beam sputtering apparatus according to the present invention can irradiate a sputtering target with an ion beam at a desired incident angle. Here, as shown in FIG. 3, in the ion beam sputtering apparatus 10 according to the first embodiment, the ion source 1 is small by disposing the rotation shaft (rotational introducer 13) near the rear part of the ion source 1. The ion beam is configured to deviate from the sputtering target T even if it is inclined at an angle. On the other hand, since the ion beam IB in the non-horizontal irradiation direction is incident on the sputtering target T, the following configuration is adopted. Hereinafter, an ion beam sputtering apparatus according to the second embodiment will be described with reference to FIG. The same elements as those in the first embodiment (see FIGS. 1 to 3) are denoted by the same reference numerals, and description thereof is omitted.

  As shown in FIG. 4, an ion beam sputtering apparatus 10A according to the second embodiment includes a processing chamber 2A, two ion sources 1 and 1, a substrate rotation mechanism 3, two target trains 4 and 4A, and sputter particle prevention. A deposition plate 44, an exhaust system 5, and a power source 11 and a mass flow controller 12 for each ion source 1 are further connected to the processing chamber 2A in the same manner as the ion beam sputtering apparatus 10 (see FIG. 1) according to the first embodiment. In addition, a preliminary chamber (not shown), target storage chambers 21a and 21b (see FIG. 2), a transfer system (not shown), and a cooling mechanism (not shown) are provided. The ion beam sputtering apparatus 10A further includes rotation introduction machines (rotation mechanisms) 13 and 13A, and support members 14 and 14A for fixing the ion sources 1 and 1 respectively. That is, in the ion beam sputtering apparatus 10A according to the present embodiment, one of the two ion sources 1 and 1 is attached to the processing chamber 2A with a support member 14A and a rotation introducing machine 13A different from the other, and the ion source 1 The configuration is the same as that of the ion beam sputtering apparatus 10 (see FIGS. 1 to 3) according to the first embodiment, except that the target train 4A is provided opposite to the substrate and the processing chamber 2A is widely formed below. .

Therefore, in the ion beam sputtering apparatus 10A, the ion source 1 (on the right side in FIG. 4) fixed by the support member 14 and the rotation introducer 13 operates in the same manner as in the first embodiment. That is, as shown in FIG. 4, the ion source 1 irradiates the ion beam IB ₂ to the sputter target T ₂ with the incident angle θ _T2 fixed at 45 °, or a desired incident angle within a predetermined range. The substrate W is irradiated with an ion beam IB _a with θ _a (see FIG. 3). The ion source 1 is appropriately referred to as an assist / ion source 1 for distinction. On the other hand, the other ion source 1 (on the left side in FIG. 4) is dedicated to sputtering, and is appropriately referred to as a sputtering-dedicated ion source 1 and differs from the sputtering target T (T ₄ , T ₅ ) as will be described later. The ion beam IB (IB ₄ , IB ₅ ) can be irradiated at incident angles θ _T4 and θ _T5 . Further, since this sputtering-dedicated ion source 1 is rotated with respect to when it is horizontally disposed and moves largely in the vertical direction, the processing chamber 2A is widely formed below. Below, the rotation introduction machine 13A which rotates the ion source 1 only for sputtering, and the support member 14A which supports the ion source 1 only for sputtering are demonstrated.

(Rotary introducer and support member)
The rotation introducing machine 13A has the same structure as the rotation introducing machine 13, and the mounting position on the side wall of the processing chamber 2A is different from that of the first embodiment. Specifically, in order to irradiate the sputter target T with the ion beam IB even when the ion source 1 is rotated, a rotating shaft is provided in the vicinity of the sputter target T in front of the ion source 1 as shown in FIG. Thus, the rotation introducing machine 13A is attached. In the present embodiment, the rotation introducing machine 13A is attached at a position near the target train 4A between the ion source 1 and the target train 4A in a side view so as not to hinder the installation and movement of the target train 4A. . The support member 14A for fixing the ion source 1 to the rotation introducing machine 13A is connected to an annular clasp that holds the body of the ion source 1 at the center and a shaft (rotating shaft) of the rotation introducing machine 13A. It consists of an L-shaped arm. The arm of the support member 14A protrudes in the width direction (x direction, see FIG. 2) of the ion beam sputtering apparatus 10A from the clasp toward the side wall of the processing chamber 2A to which the rotation introducing machine 13A is attached. Bend, extend along the side wall, and connect to the shaft of the rotation introducer 13A. As described above, the support member 14A has a portion of the arm disposed on the front side of the ion source 1 disposed near the side wall of the processing chamber 2A, and is spaced from the sputter target T irradiated with the ion beam IB. Therefore, adhesion of sputtered particles is suppressed, and contamination of the sputter target T with flakes is prevented.

(Target train)
Further, the ion beam sputtering apparatus 10A tilts the sputtering target T at an angle corresponding to the direction of the ion source 1 dedicated to sputtering (irradiation direction of the ion beam IB) in order to keep the direction in which the sputtered particles scatter vertically upward. It is preferable to wear it. For this purpose, the ion beam sputtering apparatus 10A according to the present embodiment includes a target train 4A having the following structure.

The target train 4A has the same structure as the target train 4 shown in FIG. 2 except for the shape of the slope of the base 42 (the surface on which the target holder 41 is fixed). In the target train 4A, there are steps on the inclined surface so that the inclined angles differ for each of the mounted sputtering targets T (T ₄ , T ₅ ). In FIG. 4, the sputtering target T _{4 that} is inclined closer to the front in the vertical direction and the sputtering target T _{5 that} has an inclination angle closer to the back in the horizontal direction are arranged in the vertical direction (x direction) on the paper surface and mounted on the target train 4A. ing.

As for the inclination angle of the sputtering target T, for example, the ion beam incident angle θ _T2 is set to 45 ° as in the case of the ion beam IB ₂ from the assist / ion source 1 on the right side of FIG. When doing so, as described in the first embodiment, the inclination angle of the sputtering target T ₂ is 45 °. The irradiation direction of the ion beam IB ₂ is 0 °. On the other hand, when the incident angle θ _T5 of the ion beam is smaller than 45 °, for example, set to 30 °, the inclination angle of the sputter target T ₅ is 30 °. At this time, the irradiation direction of the ion beam IB ₅ is 30 ° (−30 °) downward with respect to the horizontal. On the contrary, when the incident angle θ _T4 of the ion beam is larger than 45 °, for example, set to 65 °, the inclination angle of the sputtering target T ₄ is 65 °, and the irradiation direction of the ion beam IB ₄ is + 40 °. Thus, the inclination angle of the sputter target T may be set to the same angle as the incident angle θ _T of the ion beam. Therefore, the base 42 of the target train 4 </ b> A is formed at an inclination angle that matches a preset incident angle θ _T for each of the sputter targets T to be mounted, and has a stepped slope. Alternatively, the base 42 is configured so that it is divided into one sputter target T (target holder 41) and combined according to the incident angle θ _T , or each target holder 41 is attached with an inclination angle adjusted. May be.

Here, also in the ion source 1 dedicated to sputtering, the incident angle θ _T of the ion beam is set to 45 ° as a standard, and thus the target train 4A is also configured with the inclination angle of the sputter target T to be mounted as a standard. . Therefore, the sputtered particle prevention plate 44 provided above the target train 4 </ b> A is formed of a plate inclined at 45 °, similarly to the target train 4 side. Therefore, in the target train 4A, since the sputter target T (T ₄ , T ₅ ) whose inclination angle is not 45 ° does not come into contact with the sputtered particle deposition plate 44, the sputter target T whose inclination angle is 45 ° (FIG. 4). The base 42 is formed with a concave surface so that there is no portion protruding upward from the sputter target T ₂ mounted on the target train 4 shown in FIG. As a result, the sputter targets T ₄ and T ₅ mounted on the target train 4A are positioned more centrally than the sputter target T mounted at an inclination angle of 45 °, depending on the dimensions of the sputter target T and the like. May be lower. Since the sputter targets T ₄ and T ₅ have a partly wide gap with the sputtered particle prevention plate 44, the base is provided so that the sputtered particles scattered when the ion beam IB is not irradiated do not enter. Between the target holders 41 and 41 on the inclined surface of 42, a wall having a height that does not contact the sputtered particle prevention plate 44 may be provided vertically (yz direction) (not shown).

Further, the ion beams IB ₄ and IB ₅ having an incident angle θ _T (θ _T4 , θ _T5 ) other than 45 ° reach the approximate center of the surface of the sputtering targets T ₄ and T ₅ mounted on the target train 4A. The position of the rotation introducing machine 13A is designed. In addition, the irradiation direction of the ion beam IB of the ion source 1 dedicated for sputtering is expressed as (2θ _T −90 °) when the horizontal irradiation is 0 °, the upward irradiation is positive (+), and the downward irradiation is negative (−). ). Therefore, the sputtering ion source 1 is rotated by an angle twice as large as the amount of change in the incident angle θ _T of the ion beam, and is rotatable in a range of setting of the incident angle θ _T of the ion beam. 13A is configured.

(Sputtering)
The procedure for forming a film by binary sputtering or ion beam assisted sputtering by the ion beam sputtering apparatus 10A according to the second embodiment is the same as that of the first embodiment. However, in this embodiment, before irradiating the ion beam IB ₄ , IB ₅ from the ion source 1 for sputtering, the ion source 1 for sputtering is rotated as necessary, so that the incident angle θ _T4 , Set the direction corresponding to θ _T5 . In the ion beam assisted sputtering, the assist / ion source 1 irradiates the assist ion beam IB _a (see FIG. 3).

(Modification)
In the ion beam sputtering apparatus 10A, the incident angle θ _T of the ion beam to the sputtering target T has a plurality of preset values (for example, 45 °, 30 °, 65 °). It can also be set as the structure which changes an angle arbitrarily. For example, instead of the target train 4A, a rotatable base 142 shown in FIG. 6 and four target holders 41 fixed to the base 142 may be provided, following the rotation of the sputtering dedicated ion source 1. Thus, the inclination angle of the sputtering target T is arbitrarily changed. Alternatively, the base 42 of the target train 4A may be configured to be rotatable.

  As described above, the ion beam sputtering apparatus according to the second embodiment of the present invention is equipped with two ion sources by providing a simple rotation mechanism, as in the first embodiment, and is binary. The film can be formed by both sputtering and ion beam assisted sputtering, and the incident angle of the assist ion beam can be arbitrarily set while the surface of the substrate is directed right below (horizontal). Furthermore, the ion beam sputtering apparatus according to the second embodiment can change the incident angle of the ion beam to the sputtering target without changing the scattering direction of the sputtered particles, and the film forming property does not deteriorate. Also, sputter targets irradiated with ion beams having different incident angles can be mounted on a target train that is a linearly movable target holder unit.

[Third embodiment: ion beam sputtering apparatus]
The ion beam sputtering apparatus according to the present invention operates an ion source with two rotating shafts so that one ion source of the ion beam irradiates both the substrate and the sputter target with an ion beam at a desired incident angle. can do. Hereinafter, an ion beam sputtering apparatus according to the third embodiment will be described with reference to FIG. The same elements as those in the first and second embodiments (see FIGS. 1 to 4) are denoted by the same reference numerals, and the description thereof is omitted.

  As shown in FIG. 5, the ion beam sputtering apparatus 10B according to the third embodiment includes a processing chamber 2B, two ion sources 1 and 1, a substrate rotation mechanism 3, two target trains 4B and 4B, and a sputter particle prevention. A platen 44, an exhaust system 5, and a power source 11 for each ion source 1, a mass flow controller 12, a rotation introduction machine (rotation mechanism) 13B, a rotation transmission arm 15, a rotation axis conversion member 16, and a support member 14B are provided. Further, in the same manner as the ion beam sputtering apparatus 10 (see FIG. 1) according to the first embodiment, the ion beam sputtering apparatus 10B has a spare chamber (not shown) connected to the processing chamber 2B and target storage chambers 21a and 21b (see FIG. 1). 2), a transport system (not shown), and a cooling mechanism (not shown). That is, the ion beam sputtering apparatus 10B according to the present embodiment includes a mechanism in which the processing chamber 2B is formed broadly below like the second embodiment, and supports and operates each of the two ion sources 1 and 1, and Except for the target trains 4B and 4B, the configuration is the same as that of the ion beam sputtering apparatus 10 (see FIGS. 1 to 3) according to the first embodiment. Further, in FIG. 5, the ion beam sputtering apparatus 10 </ b> B is illustrated at different positions when the ion sources 1 and 1 are operated, but as in the ion beam sputtering apparatus 10 according to the first embodiment, It is a substantially symmetrical structure. Below, the rotation introduction machine 13B which rotates and rotates the ion source 1, the rotation transmission arm 15, the rotating shaft conversion member 16, and the support member 14B which supports the ion source 1 are demonstrated.

(Rotary introducer etc. and support member)
Similar to the rotation introducing machine 13 of the first embodiment, the rotation introducing machine 13B passes through the flange (see flanges 2f ₄ and 2f _{5 in} FIG. 2) fixed to the side wall (not shown) of the processing chamber 2B in the x direction. A rotational motion on the yz plane as a rotation axis is transmitted from outside the processing chamber 2B. The rotation introducing machine 13B in the present embodiment is of a biaxial type, and has an inner shaft and an outer shaft that rotate independently with one common rotating shaft (represented by a cross in FIG. 5). The linear rotation transmission arm 15 is connected to one of the shafts of the rotation introducing machine 13B, here the outer shaft. The rotation transmitting arm 15 extends along this side wall in the vicinity of the side wall of the processing chamber 2B, and swings (pivots) around one end connected to the outer shaft of the rotation introducing machine 13B. Further, the rotation transmission arm 15 receives the rotation of the inner shaft of the rotation introducing machine 13B, and rotates (rotates) about the center line along the longitudinal direction of the rotation transmission arm 15 as an axis. For this purpose, for example, a gear is connected to the inner shaft of the rotation introducing machine 13 </ b> B, and a worm is provided at one end of the rotation transmission arm 15. A rotation axis conversion member 16 is connected to the other end of the rotation transmission arm 15, and the rotation of the rotation transmission arm 15 is rotated on the yz plane with the x direction as the rotation axis (represented by a cross in FIG. 5). Convert to motion. For this purpose, for example, a worm is also provided at the other end of the rotation transmission arm 15 to rotate the rotary shaft conversion member 16 made of a gear. With such a configuration, the rotation axis conversion member 16 rotates (circular movement, revolution) around the rotation introducing machine 13B in a side view (yz plane), and the center of the rotation axis conversion member 16 is pivoted. Further, these two rotational movements are controlled independently of each other via one rotation introducing machine 13B. The rotation transmission means of the rotation transmission arm 15 and the rotation shaft conversion member 16 is not limited to the combination of a worm and a gear, and a known mechanism such as a bevel gear can be applied.

The support member 14 </ b> B that supports the ion source 1 includes an annular clasp that grips the body of the ion source 1 at the front, and an L-shaped arm that is connected to the rotation shaft of the rotation shaft conversion member 16. . Similarly to the support member 14 of the first embodiment, the arm of the support member 14B extends from the rotary shaft conversion member 16 in the width direction (x direction) of the ion beam sputtering apparatus 10B and bends 90 ° above the ion source 1. Connect to the clasp. As described above, the rotation transmission arm 15 and the rotation axis conversion member 16 are arranged in the vicinity of the side wall of the processing chamber 2B, and are spaced from the sputtering target T (T ₄ , T ₅ ) irradiated with the ion beam IB. Therefore, as in the second embodiment, adhesion of sputtered particles is suppressed, and contamination of the sputter target T with flakes is prevented. The shape of the support member 14B is such that the incident angle of the ion source 1 to the substrate W and the sputter target T is changed along with the position of the rotation introducing machine 13B attached to the side wall of the processing chamber 2B and the length of the rotation transmission arm 15. Therefore, it is designed according to the position and orientation when the ion beam is irradiated.

In the ion beam sputtering apparatus 10B according to this embodiment, the sputter targets T ₄ and T ₅ mounted on the target train 4B irradiated with the ion beam IB (IB ₄ , IB ₅ ) are inclined at the center position. Almost no change even if you change. On the other hand, the height of the substrate W (z direction) can be adjusted by the substrate rotation mechanism 3. Therefore, the ion source 1 is rotated about the vicinity of the sputtering target T so that the ion beam IB can be irradiated to the sputtering target T by changing the incident angle θ _T (θ _T4 , θ _T5 ). Configured. Therefore, the rotation introducing machine 13B is a target between the ion source 1 and the target train 4B in a side view so as not to hinder the installation and movement of the target train 4B like the rotation introducing machine 13A of the second embodiment. It is attached at a position near the train 4B. And the length of the rotation transmission arm 15 is designed so that it may become an appropriate distance from the ion source 1 to the sputter target T.

Then, in order for the ion source 1 to irradiate the substrate W with the ion beam IB _a at a desired incident angle θ _a (θ _a1 , θ _a2 ), the ray when the elevation angle is directed to (90 ° −θ _a ) The shape of the support member 14B (the distance between the ion source 1 and the rotation axis conversion member 16 in a side view) is designed so that the support member 14B is disposed at a position that reaches the substrate W moved by the rotation mechanism 3. The ion beam sputtering apparatus 10B designed in this way has a configuration in which the ion beam sputtering apparatuses 10 and 10A according to the first and second embodiments are combined. Specifically, in the ion beam sputtering apparatus 10A (see FIG. 4) according to the second embodiment, a part of the arm of the support member 14A is replaced with the rotation transmission arm 15, and the rotation axis conversion member 16 further ahead is replaced with the first one. It is the structure which connected the support member 14 instead of the rotation introducer 13 of 1 embodiment (refer FIGS. 1-3).

(Target train)
The target train 4B has substantially the same structure as the target train 4A of the second embodiment. The shape of the inclined surface (surface on which the target holder 41 is fixed) of the base 42 is such that the center of the mounted sputter target T is disposed on the ray of the ion beam IB irradiated at each incident angle θ _T. Designed.

(Sputtering)
The procedure for forming a film by binary sputtering or ion beam assisted sputtering by the ion beam sputtering apparatus 10B according to the third embodiment is the same as in the first and second embodiments. In this embodiment, prior to the ion beam IB, IB _a from the ion source 1, if necessary, rotate the shaft with each position of the ion source 1 of the rotation transmitting device 13B and the rotary shaft conversion member 16 And set the orientation. In the present embodiment, since the position and orientation of the ion source 1 can be individually controlled, the distance to the sputter target T is controlled (for example, incident) in the irradiation of the ion beam IB to the sputter target T. to a certain distance, regardless of the angle θ _T) can be. On the other hand, in the illumination of the assist ion beam IB _a to the substrate W, it is possible to narrow the range of movement (fluctuation height position) of the substrate W by the substrate rotation mechanism.

(Modification)
In the ion beam sputtering apparatus 10B, as in the modification of the second embodiment, in order to arbitrarily change the inclination angle of the sputtering target T, a rotatable base shown in FIG. 6 is used instead of the target train 4B. 142 and four target holders 41 fixed to the base 142 may be provided, and only one of the target trains 4B and 4B may be replaced. In addition, the two ion sources 1 and 1 may be different from each other in the mounting position of the rotation introducing machine 13B on the side wall of the processing chamber 2B, the length of the rotation transmission arm 15, and the like. The ion beam sputtering apparatus can be controlled in a wider range by combining the two ion sources 1 and 1 with different ranges and the like. Alternatively, one of the two ion sources 1 and 1 may be rotated by a uniaxial rotation introduction machine as in the first and second embodiments.

  As described above, the ion beam sputtering apparatus according to the third embodiment of the present invention includes two ion sources and is manufactured by both binary sputtering and ion beam assisted sputtering, as in the second embodiment. The incident angle of the ion beam on the substrate and the sputter target can be changed. Further, the operating range of the ion source is widened by a relatively simple rotation mechanism, and the degree of freedom in setting the incident angle and ray position of the ion beam is increased.

  The ion beam sputtering apparatus according to the present invention may include three ion sources. For example, one ion source dedicated to assist ion beams is added to the ion beam sputtering apparatus 10 according to the first embodiment. A film can be formed by binary sputtering using the assist method. In order to form a film by ternary sputtering, the three ion sources 1, 1, 1 are arranged evenly by changing the direction by 120 ° in a plan view so that they face each ion source 1. Three target holders 41 are arranged. In this case, the linearly-movable target train 4 can be provided up to one opposing the ion source 1, and the sputter target T irradiated with the ion beam from the other two ion sources 1 and 1 is fixed. Is done.

  As mentioned above, although embodiment for implementing the ion beam sputtering apparatus which concerns on this invention has been described, this invention is not limited to these embodiment, A various change is possible in the range shown to the claim. It is.

10, 10A, 10B Ion beam sputtering device 1 Ion source 13, 13A, 13B Rotation introducing machine (rotating mechanism)
2, 2A, 2B Processing chamber 3 Substrate rotation mechanism 31 Substrate stage (work stage)
33 Straight rotation introduction machine (straight line mechanism)
4,4A, 4B Target train (target holder unit)
41 target holder 42r rail (guide means)
44 Sputtered particle adhesion plate T, T ₁ , T ₂ , T ₃ , T ₄ , T ₅ Sputter target W substrate (object to be processed)

Claims (6)

A work stage that holds a target object on which a film is formed, a plurality of ion sources that irradiate the target object or a sputtering target that is a film material with an ion beam, and a plurality of ion sources that are equipped with the sputter target. A target holder in the processing chamber,
At least one of the plurality of ion sources is supported by a rotation mechanism so as to be able to irradiate an ion beam while changing an incident angle with respect to at least one of the object to be processed and the sputter target. An ion beam sputtering apparatus.   2. The ion beam according to claim 1, wherein the rotation mechanism supports the ion source so that both the object to be processed and the sputter target can be irradiated with the ion beam. Sputtering device.   3. The ion beam sputtering according to claim 1, wherein the work stage is supported by a rectilinear mechanism that moves the object to be processed in a linear direction to change a distance from the sputtering target. 4. apparatus. A target holder unit including a plurality of the target holders arranged in a linear direction is provided for each ion source, and includes a sputter particle deposition plate that shields a sputter target mounted on the target holder from scattered sputter particles.
The target holder unit includes guide means that can reciprocate along the linear direction so that any one of the plurality of mounted sputtering targets is disposed on the ray of an ion beam. The ion beam sputtering apparatus according to any one of claims 1 to 3.   The sputtered particle deposition plate is formed to cover the sputter target mounted on the target holder unit so as to cover the sputter target area on which the ion beam is incident, and is fixed in the processing chamber. The ion beam sputtering apparatus according to claim 4.   The target holder for mounting a sputter target irradiated with an ion beam by changing an incident angle from the ion source is provided so that the sputter target has an inclination angle corresponding to the incident angle of the ion beam. An ion beam sputtering apparatus according to any one of claims 1 to 5, wherein

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