JPH0229746B2 - FUKUSUNOJOHATSUGENOSONAETAIONPUREETEINGUSOCHI - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an ion plating apparatus equipped with multiple evaporation sources.

When forming an alloy, compound, or mixture film consisting of multiple elements, if these alloys are used as evaporation materials, the vapor pressure of each element will differ, resulting in significant fluctuations in the composition, making it difficult to obtain a film with the desired composition. Have difficulty.

In such a case, a plurality of evaporation sources that evaporate different substances are arranged in parallel to adjust the amount of evaporation of each.

FIG. 1 is a schematic cross-sectional view showing the configuration of a conventional ion plating apparatus equipped with a plurality of evaporation sources. Inside a vacuum chamber 1, an evaporation source A and an evaporation source B are arranged side by side. They are driven by respective drive power sources (not shown), and their potentials are the ground potential. Above the evaporation source, a substrate holder 3 is arranged that holds a plurality of substrates 2 and rotates the substrates 2 so that the relative positions of the individual substrates with respect to the evaporation source are even. A potential is applied.

A thermionic filament 5 driven by a cathode power source 7 and at ground potential, and an anode 6 to which a positive potential is applied by an anode power source 8 are arranged facing each other near the evaporation sources A and B, and evaporated particles and gas are introduced. It constitutes a means for ionizing the gas introduced from the port 9. 10 is an exhaust system.

When using such a device to evaporate two types of evaporated substances from their respective evaporation sources and ionize them using the ionization means, the evaporation sources and ionization space are close to each other, so they interfere with each other, making it impossible to control them completely independently. It was difficult.

In particular, when the melting temperature, vapor pressure, difficulty of ionization, etc. are extremely different between the two evaporated substances, there are disadvantages as described below.

For example, this is the case when titanium is evaporated from one evaporation source and gold is evaporated from the other evaporation source.

Evaporate titanium in a gas atmosphere containing nitrogen,
A method of forming a titanium nitride film by a reactive ion plating method has been put into practical use as a method for manufacturing wear-resistant decorative parts. In this case, attempts have been made to eutectoid gold in order to tone the yellow-brown color of titanium nitride to golden yellow.

When such a eutectoid film is formed using a conventional ion plating device, titanium from one evaporation source forms a film on the surface of the molten gold from the other evaporation source, which causes the gold to undergo a bumping phenomenon. At the same time, the vapor pressure of the gold suddenly fluctuates. Further, there is the disadvantage that if the amount of vapor in one is varied, the ionization rate in the other is also varied as a result of mutual interference of discharge.

Because of this phenomenon, it has been extremely difficult to control the coating composition.

Therefore, an object of the present invention is to eliminate the above-mentioned drawbacks in the prior art, and for this purpose, in the present invention, a plurality of evaporation sources that have large mutual interference are arranged vertically and vertically via a substrate holder.

(Example) FIG. 2 is a schematic cross-sectional view showing the configuration of the ion plating apparatus of the present invention. In FIG. 2, the same numbers as in FIG. 1 indicate the same members.

An upward evaporation source A made of titanium as the evaporation material is arranged below the rotary substrate holder 3, and near it, a thermionic emission filament 51 driven by a cathode power supply 71 and an anode power supply 81 are arranged. An anode 61 to which a positive potential is applied is arranged as an ionizing means.

On the other hand, above the substrate holder 3, a downward evaporation source C made of gold as an evaporation material is arranged, and near it, a thermionic emission filament 52 driven by a cathode power source 72 and a positive potential generated by an anode power source 82 are placed. An anode 62 to which is applied is arranged as an ionizing means.

The means for ionization is not limited to the one shown in the figure, and various methods such as high frequency excitation methods can be adopted, and it is also possible to simply apply a DC voltage between the evaporation source and the substrate with the substrate side at a positive potential. However, it can also be used as a means of ionization.

In the embodiment shown in FIG. 2, two gas inlets are provided, and when forming a eutectoid film of titanium nitride and gold, a gas containing nitrogen is introduced from the lower gas inlet 91. and the upper gas inlet 9
Inert gas is introduced from 2. This promotes the nitriding reaction of titanium vapor and stabilizes the amount of gold evaporated. Here, titanium nitride (TiNx) 95%,
A comparative example between a conventional apparatus and the apparatus of the present invention will be shown, taking as an example the case of forming a 2 micron thick eutectoid film having a composition of 5% gold.

When a eutectoid film is formed at a film formation rate of 2 microns per 0.5 hours using the conventional apparatus shown in Figure 1,
The color of the film was gold with a whitish tinge, and its Vickers thickness was about Hv=1300.

The degree of nitridation determined from the measurement of the lattice constant by X-ray diffraction was x≈0.6.

On the other hand, when the deposition rate was slowed to 2 microns per 1.5 hours, a bright golden color was obtained and the hardness increased.
Hv=2400, degree of nitridation x≒0.9.

In these treatments, bumping of the gold was unavoidable, resulting in a defect rate of approximately 30% in appearance quality.

On the other hand, when the apparatus of the present invention shown in Fig. 2 is used, a bright golden-yellow eutectoid film can be obtained even at a film formation rate of 2 microns per 0.5 hours, and its hardness is
Hv=2300, degree of nitridation x≒0.9.

Furthermore, when the film was formed at a rate of 2 microns per hour, a hardness of Hv=2700 was obtained, and the film was bright golden in color and had a degree of nitridation x≈0.9.

No bumping of gold was observed in these treatments, and the appearance defect rate was 5% or less.

From these results, if the device of the present invention is used,
It was observed that the nitriding reaction was accelerated and a bright golden color and high hardness were obtained even when the film formation rate was relatively high.

3 to 6 are sectional views showing examples of downward evaporation sources that can be employed in the apparatus of the present invention, and show examples in which gold is assumed to be the evaporation substance.

Figure 3 shows a high-frequency induction heating type downward evaporation source C1.
shows. Gold 12 as an evaporative substance is charged inside a donut-shaped ceramic crucible 11, and the lower surface of a ceramic cover 13 is lined with a high melting point metal plate 14 such as tungsten or tantalum. The gold 12 is melted by induction heating by the high frequency coil 15, and its vapor is ejected downward from the nozzle 16. Since the metal plate 14 on the lower surface of the ceramic cover 13 is red-hot to a high temperature by induction heating, evaporated substances are prevented from adhering to this part.

FIG. 4 shows a resistance heating type downward evaporation source C2.

Gold 12 as an evaporative substance is charged into a covered tungsten boat 19 having a nozzle 17 in the center and a molten metal basin 18 around the periphery, and the boat is resistance heated by electricity. Evaporated substance vapor is ejected downward from the nozzle 17.

FIG. 5 shows a downward evaporation source C3 constituted by a magnetron type sputter target.

Inside the water-cooled container made of non-magnetic stainless steel, which consists of an upper plate 20, a side plate 21, and a lower plate 22, many sets of permanent magnets 23 and yokes 24 are arranged as shown in the figure. A gold plate 25 as an evaporative substance is glued. When a sputtering phenomenon is caused in an inert gas using such a target as a cathode, gold vapor is efficiently released from the surface of the gold plate due to the well-known magnetron effect.

Figure 6 shows downward evaporation source C using electron beam heating.
4 is shown.

Filament 2 heated by heating power source 26
7 and a repeller 28 which is placed outside and has the same potential as the filament 27 are disposed facing each other, and a gold wire 30 automatically supplied from a reel 29 hangs down from the center of the cathode. power supply 3
When a positive high voltage is applied to the gold wire 30 via the filament 27, the gold wire 30 is heated by the electron beam emitted from the filament 27, and gold evaporates from its tip 31.

Although the above embodiments are illustrative of the case where a titanium nitride and gold eutectoid film is formed, it goes without saying that the apparatus of the present invention is not limited to the embodiments and can be widely used for forming multi-element films.

Further, the number of evaporation sources is not limited to one each on the upper and lower sides, but a plurality of evaporation sources may be arranged. In this case, the object of the present invention can be achieved by distributing two evaporation sources that have the greatest mutual interference above and below.

As described above, the apparatus of the present invention eliminates mutual interference between a plurality of evaporation sources and enables stable control of film composition, and is highly valued in the field of thin film technology.

[Brief explanation of drawings]

FIG. 1 is a membrane-type sectional view showing the structure of a conventional ion plating apparatus equipped with a plurality of evaporation sources, FIG. 2 is a schematic sectional view showing the structure of the ion plating apparatus of the present invention, and FIG. 6 through 6 are sectional views showing specific examples of downward evaporation sources in embodiments of the present invention. 1... Vacuum chamber, 2... Substrate, 3... Substrate holder, 9... Gas inlet, A, B... Upward evaporation source, C, C1, C2, C3, C4... Downward evaporation source.

Claims (1)

[Claims] 1. A plurality of evaporation sources that evaporate different substances, a substrate holder that holds a plurality of substrates and rotates the substrates so that the relative positions of the individual substrates with respect to the evaporation source are equal, and a gas An ion plating apparatus comprising an inlet and a means for ionizing introduced gas and evaporated substance vapor in a vacuum chamber,
At least one of the evaporation sources is an upward evaporation source disposed below the substrate holder to evaporate the evaporation material upward, and at least one of the remaining evaporation sources is disposed above the substrate holder to direct the evaporation material downward. An ion plating device equipped with a plurality of evaporation sources, characterized in that they are downward evaporation sources. 2. The ion plating apparatus according to claim 1, wherein the evaporation material of the upward evaporation source is titanium, and the evaporation material of the downward evaporation source is gold. 3. The gas inlet opens near the upward evaporation source to introduce nitrogen-containing gas, and the gas inlet opens near the downward evaporation source to introduce inert gas. An ion plating apparatus according to claim 2, characterized in that: