JP2000038663A - Magnetron sputtering device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a magnetron sputtering device high in a vapor deposition rate, film-forming a multi-element thin film at a high speed, flexible in the compositional control of the film, easily covering a dense multi-element thin film at a high speed and furthermore easily capable of the maintenance. SOLUTION: As for a target composed of a target electrode 5 provided with a magnet and a target material 7 of the different kind or the same kind, two pieces are used as a pair, a target and a supporting stand 22 placed with a base material 2 are arranged so as to form a plane 11a connecting the space between the crossed line 7c of two pieces of the target surfaces 7a and 7b and the center axis 10 of the supporting stand 22, the faces on the sides of two pieces of the target materials are respectively made gradient for the planar side connecting the space between the supporting stand-the target, and the same is arranged by one set or plural sets. Moreover, the rear of the target is provided with an electromagnet 9, and, furthermore, the space between the target and the base material or between a heater 3 for base material heating and the base material is provided with a shutter 4 capable of cutoff.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to the manufacture of various semiconductor devices, the formation of hard films on cutting tools and wear-resistant parts, the formation of corrosion-resistant films on corrosion-resistant parts, the formation of decorative films on crafts and building materials, and the like. The present invention relates to a thin film forming apparatus for forming a functional film on a lens or a lens, and more particularly to a thin film forming apparatus for forming a denser and more crystalline film at a higher speed than before.

[0002]

2. Description of the Related Art In recent years, in coating a hard coating on a cutting tool, a wear-resistant part or a corrosion-resistant part, it has been desired to develop a technique for coating a large number of parts at a lower cost in order to reduce the processing cost. ing. In addition, when depositing a wear-resistant film or a corrosion-resistant film, a film having higher adhesion, a denser and harder film is required, and a need for a device capable of forming a multi-element film with a highly controlled composition is increasing. ing.

As a method for forming a ceramic-based hard thin film, an electron beam heating vacuum evaporation method and an arc discharge evaporation method are often used, but the former is difficult to deposit a multi-element film.
The latter has a problem that the surface of the film is rough and uneven because coarse particles called macro particles are taken into the film.

[0004] On the other hand, in the sputtering method, ions such as Ar generated by glow discharge are made incident on a target surface, and the target material is repelled by the energy and transferred to the substrate surface. When a reaction product of a target material and an introduced gas is generated on the surface of a substrate, this is called a reactive sputtering method, and is often used as a film forming apparatus in the field of semiconductors. Further, it is suitable for forming a film containing a plurality of metal elements such as TiAlN and TiCrN (hereinafter, referred to as a multi-element film).

[0005] However, the sputtering method has a problem that the deposition rate is slower than the electron beam heating vacuum deposition method and the arc discharge deposition method, so that the processing time is longer and the coating processing cost is higher. Was not widely used. However, efforts have also been made to increase the evaporation rate in the sputtering method, and magnetron sputtering in which a magnet is attached to the back of the target is now generally used. For example, JP-A-10-152774, JP-A-10-8246, JP-A-10-463
No. 30, JP-A-3-79760, and the like, and are used in the manufacturing process of semiconductors and magnetic recording media.

[0006]

However, magnetron sputtering still has the problem that the average energy of sputtered particles is low, so that the adhesion strength of the film to the base material is low and the film density is low.
Further, there is a problem that the deposition rate is still slow as compared with the above two methods. Also, it was difficult to perform advanced composition control and high-speed film formation in multi-element film deposition. Further, there is a problem that the sputtering particles are scattered in the film forming chamber and maintenance is troublesome.

SUMMARY OF THE INVENTION In view of the above-mentioned conventional problems, it is an object of the present invention to increase the deposition rate based on the magnetron sputtering method, to form a multi-element thin film at a high speed, to flexibly control the composition of the film, and to improve the precision. It is an object of the present invention to provide a magnetron sputtering apparatus which can easily coat a multi-element thin film at high speed and is easy to maintain.

[0008]

In order to solve such a problem, the present inventors evaporated a target material by a sputtering method and examined the number of evaporated atoms and the distribution of kinetic energy. In a normal sputtering phenomenon, inert gas ions such as argon are incident on the target surface almost perpendicularly, and as a result, multiple collisions of the incident ions and target atoms occur on the target surface, whereby the target atoms are repelled from the surface. At that time, it is known that particles having higher energy fly out in the direction of flight of the target atom in a diagonal direction than the direction perpendicular to the target surface. As a result of a more detailed investigation, the present inventors have found that as shown in FIG. 1, many particles fly in the angle range between 20 ° and 75 ° and between 110 ° and 165 ° between the substrate to be formed and the target surface. Especially 25 ° to 65 ° and 115 ° to 1
It was found that the film thickness was increased in the range of 55 °, and that the film in this range was dense and had high film hardness. In addition, the present inventors can control the film formation rate, thickness, denseness, and the like of the film by devising the arrangement of the base material and the target surface. It has been found that by arranging them in opposition, the direction of the particles can be concentrated obliquely and controlled stably.

According to this knowledge, in the present invention, in a magnetron sputtering apparatus for evaporating a target material fixed to a target electrode by sputtering to form a film on a substrate surface, two targets each composed of a target electrode and a target material are used. One set is used as the support base by the intersection of the two target surfaces and the center axis of the support base on which the base material is placed.
The target and the support are arranged so that a plane connecting between the targets (hereinafter, referred to as a support-target plane) is formed, and two surfaces of the target material side are inclined with respect to the support and target plane, respectively. By,
The above problem was solved by causing a large amount of particles having high energy to enter the direction of the substrate. That is, since the deposition rate is increased by arranging the target surface obliquely with respect to the base material, and a sputter atom having high energy enters the base material, a denser film can be obtained.

The center axis of the support is the rotation axis when the support on which the base material is placed is rotatable, and when the support is not rotating, the center axis of the apparatus is used. The center of gravity or the position of the center of gravity of the base material to be arranged.

The pair of targets arranged obliquely may be asymmetric with respect to the support base-target plane depending on the characteristics such as the evaporation rate. However, in order to simplify the apparatus configuration, Alternatively, it is desirable to arrange them symmetrically in order to simplify the control (claim 2).

The target placed at an angle can supply a high concentration of particles by setting the angle formed between the support-target plane and the target surface from 25 ° to 65 °.

In the film forming chamber (in the vacuum vessel), the back side and the front side of the base material are formed toward the pair of targets, but in order to minimize the back side, that is, the shaded portion, a plurality of pairs of targets are provided. In claim 4, a set of two targets is provided at two or more locations in a film forming chamber provided with a support base. This enables high-speed vapor deposition even on a large substrate.

Further, by attaching a sputter target material having a different composition to each target, a multi-element thin film can be deposited at a low cost, and the composition can be highly controlled by appropriately controlling the evaporation rate of each target material. The deposition of a hard thin film became possible.
(Claim 5)

The target materials may be made not only to have different compositions from each other but also to have different compositions from each other.
This makes it possible to obtain a film having a more complicated composition with an inexpensive target (claim 6). Further, a multi-element film can be formed easily at low cost.

In the case of a pair of target electrodes, it is possible to more accurately control particles in the direction of the base material by making the arrangement of the magnets at the central portion and the outer peripheral portion the same. Further, the target electrode has a central magnet in which the N or S pole is arranged toward the target surface in the center, and magnetic poles of opposite polarities to the central magnet are arranged on both sides of the central magnet. By providing a metal shield plate at the periphery of the target and a metal shield plate in an electrically floating state or a ground potential, sputtering on the side surface of the target can be suppressed and stable film formation can be performed.

Further, an electric magnet is formed by winding an electric wire along the outer periphery of a set of target material projected on a plane orthogonal to the support base and the target plane, and the electromagnet is formed by connecting the set of target electrodes to the opposite side of the target material. (Claim 8). As a result, the magnetic field distribution in the film forming chamber can be changed, and the ionic current incident on the substrate can be controlled in a wide range.

The present invention is not limited to a pair of targets of the present invention.
In order to secure the adhesion strength of the film, it is very important to control the amount of evaporation at the start of vapor deposition. Therefore, claim 9
In, a heater for heating the substrate is provided at one or more locations in the film formation chamber, and a shutter capable of shutting off between the target and the substrate and the heater for heating the substrate and the substrate is provided.
At the time of heating and activation of the target, the gap between the target and the base material is blocked to prevent the deposition of impurities on the base material. The deposition of the film on the heater can be suppressed. The heater for heating the base material plays an important role in heating the base material, accelerating the degassing in the evaporation container, shortening the evaporation processing cycle, and ensuring the adhesion strength of the film. The shutter is appropriately provided such as an opening / closing shutter having a fixed position, a rotary moving shutter movable between a target and a substrate, and a heater and a substrate.

In the invention of claims 1 to 8 having a set of two targets, the provision of the shutter of claim 9 makes it possible to more effectively form a film having a high adhesion strength. ).

[0020]

Next, a first embodiment of the present invention will be described. FIG. 2 is a plan view illustrating the configuration of the sputtering apparatus, FIG. 3 is a plan view illustrating the arrangement of the base material, the target, and the electromagnet, and FIG. 4 shows the configuration of the electromagnet of the present invention (a).
Is a plan view, (b) is a side view, and FIG. 5 is an electrical wiring diagram.
As shown in FIG. 2, the magnetron sputtering apparatus 20 includes:
Vacuum container 1 into which a substrate to be formed is inserted and forms a film forming chamber
Is provided with a vacuum container door 11, a substrate 2 on which a film is to be formed in the vacuum container, and a support base 22 for mounting the substrate.
The support is rotatable about a central axis 10. The central axis 10 coincides with the central axis of the substrate, and the substrate is rotated around the central axis. Since there are various types of base materials 2, an axis passing through the center of gravity of the center axis 10
It is good to arrange so that it becomes. Alternatively, the rotation center shaft 10 may be provided on the base material 2 itself without being placed on the support base 22. Two substrate heating heaters (hereinafter simply referred to as “heaters”) 3 extending in the circumferential direction around the center axis 10 are arranged at symmetrical positions, and one of the heaters is fixed to the vacuum vessel door 11.

The target electrode 5 and the target material 7 fixed to the target electrode are formed as a set of two inclined sheets.
Symmetrically around the central axis 10
Are arranged. The target is arranged so that the center axis 10 and the intersection line 7c of the pair of target surfaces 7a, 7b form a support-target plane 11a.
The target surfaces 7a and 7b are arranged at an angle α and α ′ with respect to the support-target plane 11a, respectively.

The center axis 1 is the shutter 4 whose plane cross section is arcuate.
It is provided at a symmetrical position with respect to 0, and is rotatable so as to be able to shut off between the target and the base material 2 or between the heater 3 and the base material 2, respectively.

As shown in FIG. 3, the target electrode 5 has a central magnet (permanent magnet) 6a having an N-pole facing the target surfaces 7a and 7b at the center, and opposite polarities to the central magnet at both sides. Outer magnets (permanent magnets) 6b, 6b arranged with their S poles facing the target surface.
Further, a metal shield plate 8 in an electrically floating state or a ground potential is provided around the target. Further, an electromagnet 9 is provided on the back surface of the target electrode 5.

The electromagnet 9 is disposed behind the target electrode 5 with the vacuum vessel wall 1a interposed therebetween as shown in FIG. 4A, and is orthogonal to the support base-target plane 11a as shown in FIG. 4B. An electric wire 9a is wound along an outer periphery 7d of a set of target material projected on a surface to be formed, and a current can be caused to generate a magnetic field along the support-target plane 11a. ing.

As shown in FIG. 5, the heater 3 is connected to an AC power supply 31 so as to increase the degassing speed in the vacuum vessel 1 and to keep the base material at a predetermined temperature by energizing and heating. . Further, a substrate power supply 21 for applying a bias voltage to the substrate 2, a heater power supply 31 for heating the heater, a target power supply 51 for applying a bias voltage to the target, and a current flowing through the electromagnet 9 to generate a magnetic field. An electromagnet power supply 91 is provided for the operation.

[0026]

(Example 1) A TiAlN film was coated by using the magnetron sputtering apparatus 20 described above. In the first embodiment, as shown in FIG.
A pair of a target material of a 5 mm titanium plate and a target material of an aluminum plate of the same dimensions were attached to the target electrode 5 as a set, and the target surfaces 7 a and 7 b
Was installed at an angle of 45 degrees with respect to the support-target plane 11a, and a pair of targets having the same configuration was installed on the opposite side across the base material 2. Base material 2 has a diameter of 10c
A SUS304 cylinder having a length of 25 m, a height of 25 cm and an inner diameter of 9.4 cm was used, and was placed on a base support 22 having a rotating mechanism. At this time, the rotation speed of the substrate was set to 10 rpm.
The electromagnet 9 was not used.

First, the vacuum vessel 1 is set to 1 × 10 ⁻⁶ Torr.
Then, the temperature of the substrate was increased to 300 ° C. by applying a vacuum to the heater 3 and heating the heater 3 simultaneously. At this time, the two shutters 4 are arranged in front of two sets of targets, respectively. Then, add 50 cc of argon gas into the vacuum vessel.
m at a flow rate of m, and remove each of the targets from the target surface 7a, 7b to remove the reaction products.
V, 5A for 10 minutes. Then shutter 4
Was moved from the target surfaces 7a and 7b to the front surface of the heater 3, and a bias of -450 V was applied to the substrate 2 to perform sputter etching for 20 minutes to activate the substrate surface. Thereafter, nitrogen gas was introduced into the vacuum vessel, and the coating treatment was performed for 1 hour with the voltage of the substrate 2 set to -100V. At this time, the amount of nitrogen gas introduced was suppressed for 20 seconds from the start of coating, and only titanium was evaporated to form an adhesive layer of only titanium at the interface between the film and the substrate. After that, the introduction amount of nitrogen gas is 50s
ccm, and the evaporation amount of aluminum is adjusted by adjusting the target current so that the atomic ratio of titanium to aluminum is 1: 1.
Vapor deposition was performed so that

After the deposition process, the film thickness was examined.
Met. Thus, the film growth rate was 5 μm / h, which was higher than that of the conventional sputtering method. In addition, in the evaluation by the scratch test, the critical load at which the acoustic emission appears was 70 N, and the adhesion was sufficiently high for practical use. Further, when the film hardness was measured with a micro Vickers hardness meter, it was 2450 Hv, which was sufficient for a TiAlN film.

For comparison, a TiAlN film was deposited by using a conventional magnetron sputtering apparatus 30 shown in FIG. 8 and using the same substrate 2. At this time, the target material 3 fixed to the target electrode 35
No. 7 is made so that the ratio of Ti to Al is 1: 1.
Two 4 cm × 25 cm × 5 mm plates were symmetrically arranged.
Using this, a TiAlN film was similarly deposited for 1 hour. However, since the film composition cannot be graded in principle with the comparative device, the film is a TiAlN film without gradient. In the measurement after the deposition, the film thickness was 3 μm. Therefore, the deposition rate was 3 μ / h, and the deposition rate was lower than that of the apparatus of the present invention. In the scratch test, the critical load was 50 N, and the adhesive strength was lower than that of the device of the present invention having a gradient composition layer. The film hardness is 210
0 Hv, which was lower than the device of the present invention.

As described above, in the apparatus of the present invention, it was possible to continuously change from the Ti film, which is the adhesive layer, to the TiAlN film, so that a film having high adhesion could be formed. Also, by inclining the target, it was possible to obtain a dense, high-hardness film at high speed.

(Embodiment 2) Next, a second embodiment will be described. In the second embodiment, an aluminum material was coated with a CrN film using the magnetron sputtering apparatus 20 'of the present invention shown in FIG. In Example 1, the substrate was cylindrical, but in Example 2, as shown in FIG. 6, the shape of the substrate 2 was a rectangular parallelepiped, all the target materials 7 were the same, and the mounting angle was α = The only difference is that α ′ = 60 degrees and the use of the electromagnet 9. In FIG. 6, a chrome plate of 7 cm × 25 cm × 5 mm is attached to all of the two sets of targets, and the surfaces 7a and 7b of each target are set so as to be inclined at 60 degrees with respect to the support-target plane 11a. Was placed on the opposite side with the substrate interposed therebetween as shown in FIG. The size of the base material 2 is 25 cm long and 15 cm wide.
cm and a thickness of 5 cm, the substrate was placed on the substrate support 22 as shown in FIG. 6, and the substrate was not rotated. In addition, an electromagnet current was applied to the electromagnet 9 installed outside the target in a direction in which the substrate current increased.

First, the vacuum vessel 1 is evacuated to 1 × 10 ⁻⁶ Torr while the two shutters 4 are arranged in front of two sets of targets, respectively, and the heater 3 is simultaneously heated and heated. The temperature of the material 2 was increased to 200 ° C. In the following, steps before vapor deposition were performed in the same procedure as in Example 1, and steps up to sputter etching were performed. At this time, the electromagnet current was kept constant at 7 A, and the substrate current was about 2 A. After that, nitrogen gas is introduced into the vacuum vessel 1 and the substrate voltage is reduced to-
The coating treatment was performed at 120 V for 2 hours. At this time, the introduction amount of nitrogen gas was suppressed for 20 seconds from the start of coating, and thereafter the introduction amount was gradually increased to a predetermined value of 50 ccm. Thereby, an adhesive layer of only chromium was formed on the interface between the film and the substrate.

After the deposition process, the film thickness was examined.
m. Thus, the film growth rate was 7.5 μm / h. In addition, the evaluation by the scratch test showed that CrN
The critical weight of the film was about 60N, and had a sufficiently high adhesion strength. Further, the film hardness measured by a micro Vickers hardness tester was 2000 Hv, and a dense and hard film having a large amount of CrN component was formed.

For comparison, a CrN film was deposited using the conventional magnetron sputtering apparatus 30 shown in FIG. At this time, 14cm ×
Two 25 cm × 5 mm chromium plates were used. Using this magnetron sputtering apparatus, a CrN film was deposited for 2 hours in the same manner as described above. In the measurement after the deposition, the film thickness was 8 μm. Therefore, the deposition rate was 4 μ / h, and the deposition rate was lower than that of the apparatus of the present invention. The critical load according to the scratch test was 60N. The film hardness is 1
The film had a hardness of 800 Hv and a high content of Cr ₂ N, and had a lower hardness than that of the present invention. It is considered that the hardness of the present invention is higher than that of the tilt target type magnetron sputtering apparatus of the present invention because the plasma intensity near the base material is high and chromium atoms with high energy are incident on the base material.

As described above, it has been found that the apparatus of the present invention can synthesize a CrN film having good film quality at a high speed, and can sufficiently cover a thick CrN film required. In addition, by inclining the target, a dense and high-hardness film could be obtained.

(Embodiment 3) Further, a third embodiment will be described. In the third embodiment, a Ti is produced by using the magnetron sputtering apparatus 20 "of the present invention shown in FIG.
An AlN film was coated. In FIG. 7, 7 cm ×
A target on which a titanium plate of 25 cm × 5 mm is mounted and a target on which an aluminum plate of the same size is mounted are prepared, and the surfaces 7a and 7b of each target are inclined at α = α ′ = 50 degrees with respect to the support-target plane 11a. One set of targets set at different angles was set, and three sets of targets having the same configuration were set as shown in FIG. The support base 22 is a four-axis revolvable one having a diameter of 8 cm and a height of 2 cm.
A 0 cm round bar 2 made of SKD51 was placed. The rotation speed of the support 22 during the coating process was 6 rpm, and each substrate 2 was
Rotated 15 degrees per rotation. The same components as those described above are denoted by the same reference numerals and description thereof will be omitted. However, three shutters 4 are arranged concentrically on different circles, and when shutting off the target and the base material 2, each one moves between the target and the base material and shuts off the heater 3 and the base material. When doing so, the shutters are made to overlap each other so that the target and the base material are not blocked.

As shown in FIG. 7, first, three shutters 4 are placed in front of three sets of targets, and the vacuum vessel 1 is evacuated to 1 × 10 ⁻⁶ Torr, and at the same time, the heater 3 is electrically heated. Then, the temperature of the substrate 2 was raised to 300 ° C. Thereafter, the same procedure as in the first embodiment is applied to TiAlN.
Film deposition was performed. However, at this time, the current of the electromagnet 9 is 7
A was kept constant, and the current of the substrate 2 was adjusted to be 3 A. The vapor deposition treatment was performed for 40 minutes, and the film formation rate, adhesion strength, and film hardness were examined using a SKD51 test piece placed at the same time as the substrate 2 after cooling. As a result, the film growth rate was 7 μm / h, which was sufficiently higher than the conventional sputtering method. Also, the critical load in the adhesion strength, that is, the scratch test is 7
0N, and the adhesion was sufficiently high for practical use. The film hardness was 2400 Hv, which was sufficient for a TiAlN film.

As described above, in the apparatus of the present invention, it was possible to continuously change from the Ti film, which is the adhesive layer, to the TiAlN film, so that a film having high adhesion could be formed. Further, by using three targets, a denser film having higher hardness could be obtained at higher speed.

[0039]

According to the present invention, a target made of a target electrode and a target material of a magnetron sputtering apparatus is formed into a set of two targets, and the surfaces of the two targets are respectively arranged obliquely to the support base-target plane side. A large amount of particles with high energy are incident in the direction of the material, increasing the deposition rate.Also, high-energy sputtered atoms are incident on the base material. The deposition can be easily performed, and a dense film having a high adhesion strength can be deposited at a high speed in a short time.

Further, since a pair of targets arranged at an angle are arranged symmetrically with respect to the support base-target plane, and the structure and control can be simplified, production and control are easy.

Further, by setting the angle between the support base-target plane and the target surface from 25 ° to 65 °, it is possible to supply high-concentration particles, so that the deposition rate is higher and a dense multi-element thin film can be formed. Can be provided.

Further, a set of two targets is provided at two or more places in the film forming chamber provided with the support base, so that high-speed vapor deposition can be performed even on a large base material, Vapor deposition was also possible on the base material, making it suitable for mass production.

Further, a sputter target material having a different composition is attached to each target, or the composition of a pair of target materials is made different from each other, so that an inexpensive material can be used without using an expensive alloy material. The composition of the film can be freely controlled by adjusting the evaporation amount of each target, so that a gradient composition film or a multilayer film having a high adhesion strength can be easily formed. became.

Each pair of target electrodes can more precisely control the particles in the direction of the base material by making the magnet arrangements at the central portion and the outer peripheral portion the same, and the target electrode has an N or S pole at the central portion. A central magnet placed facing the target surface, an outer peripheral magnet of opposite polarity is placed on both sides of the central magnet, and a metal shield plate in an electrically floating state or earth potential is provided around the target. Since the directionality of the particles is stabilized, control becomes easier.

Further, an electromagnet in which an electric wire is wound along the outer periphery of the target material is provided behind the target electrode to change the magnetic field distribution in the film forming chamber and control the ion current incident on the base material in a wide range. The plasma region generated near the magnetron sputter target can be extended in the direction of the substrate, whereby the number of ions incident on the substrate can be controlled, and the film quality and the film formation rate can be improved. Further, the plasma region generated near the target can be extended to the vicinity of the substrate, and thus the control range of the substrate current can be widened, so that the film quality can be easily controlled.

Further, a shutter is provided between the target and the base material so that the target and the base material are shut off during heating and activation of the target, and between the heater and the base material during ion bombardment and vapor deposition. High adhesion strength can be ensured by reducing contamination of the substrate surface when activating the target, and the adhesion of the evaporation substance to the heater during evaporation can be suppressed, so that the maintainability is greatly improved. There is.

As described above, the inclined target type magnetron sputtering apparatus of the present invention has various advantages as compared with the conventional magnetron sputtering apparatus, and is very useful in industry.

[Brief description of the drawings]

FIG. 1 is an angle distribution diagram of evaporated atoms in a sputtering phenomenon, in which (a) is an angle distribution diagram of a flight direction (degree) of sputter particles and a Ti deposition rate (速度 / sec) on a substrate, and (b).
FIG. 4 is an explanatory diagram showing an angle of a flying direction of a sputtered particle from a target surface.

FIG. 2 is a plan view illustrating a configuration of a magnetron sputtering apparatus according to an embodiment of the present invention.

FIG. 3 is a plan view illustrating the arrangement of a base material, a target (a target electrode and a target material), and an electromagnet.

4A and 4B show a configuration of an electromagnet of the present invention, wherein FIG.
(B) is a side view.

FIG. 5 is an electric wiring diagram showing an example of electric wiring of the device shown in FIG. 2;

FIG. 6 is a plan view illustrating a configuration of a magnetron sputtering apparatus used in Embodiment 2 of the present invention.

FIG. 7 is a plan view illustrating a configuration of a magnetron sputtering apparatus used in Embodiment 3 of the present invention.

FIG. 8 is a plan view illustrating a configuration of a conventional magnetron sputtering apparatus.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Vacuum container (film formation chamber) 2 Substrate 3 Heater for substrate heating (heater) 4 Shutter 5 Target electrode 6a Center magnet (permanent magnet) 6b Peripheral magnet (permanent magnet) 7 Target material 7a, 7b Target surface 7c Intersection line of target surface 7d Perimeter of one set of target material 8 Metal shield plate 9 Electromagnet 9a Electric wire 10 Center axis 11a Plane connecting support-target (support-
20, 20 ', 20 "magnetron sputtering device 22 support

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Kenichi Sugai 1-1-1, Fujikoshi Honcho, Toyama City, Toyama Prefecture Fujiuchi Co., Ltd. (72) Inventor Satoshi Sato 1-1-1, Fujikoshi Honcho, Toyama City, Toyama Prefecture Shares Company Fujikoshinai F term (reference) 4K029 BD01 BD11 CA05 CA15 DA08 DA12 DC16 DC40 5F103 AA08 BB22 DD30 RR02 RR03 RR08

Claims (10)

[Claims] In a magnetron sputtering apparatus for evaporating a target material fixed to a target electrode by sputtering to form a film on a substrate surface, a target comprising the target electrode and the target material is formed as a set of two sheets. The target and the support are arranged so that a plane connecting the support and the target is formed by the intersection of the surface of the two targets and the central axis of the support on which the base material is placed,
A magnetron sputtering apparatus, wherein the surfaces of the two target materials are inclined with respect to a plane connecting the support and the target. 2. The magnetron sputtering apparatus according to claim 1, wherein the pair of targets arranged obliquely are arranged symmetrically with respect to a plane connecting the support and the target. apparatus. 3. The target arranged obliquely,
3. The magnetron sputtering apparatus according to claim 1, wherein an angle between a plane connecting the support and the target and a surface of the target is set to 25 to 65 degrees. 4. The magnetron sputtering apparatus according to claim 1, wherein the pair of targets is provided at two or more locations in a film forming chamber provided with the support table. . 5. The magnetron sputtering apparatus according to claim 1, wherein two or more kinds of target materials having different compositions are mounted on the target. 6. The magnetron sputtering apparatus according to claim 5, wherein a composition of the pair of target materials is different from each other. 7. The target electrode has a central magnet arranged in the center with an N or S pole facing the target surface, and magnetic poles of opposite polarity to the central magnet on both sides of the central magnet on the target surface. And a pair of target electrodes, wherein the pair of target electrodes has the same magnet arrangement of the central magnet and the peripheral magnet, and furthermore, is electrically floating around the target. 7. The magnetron sputtering apparatus according to claim 1, wherein a metal shield plate having an earth potential is provided. 8. An electromagnet having an electric wire wound along an outer periphery of the set of target materials projected on a plane orthogonal to a plane connecting the support and the target, the electromagnet being opposite to the set of target electrodes. The magnetron sputtering apparatus according to claim 7, wherein the magnetron sputtering apparatus is provided in a direction toward a target material. 9. A heater for heating a substrate is provided at one or more locations in a film forming chamber, and a shutter capable of shutting off between a target and a substrate and between the heater for heating a substrate and the substrate is provided. It is characterized in that it is possible to shut off between the target and the substrate at the time of heating and activation of the target, and to cut off between the heater for heating the substrate and the target at the time of ion bombardment and vapor deposition. Magnetron sputtering equipment. 10. The magnetron sputtering apparatus according to claim 1, further comprising a shutter that can be shut off provided in the magnetron sputtering apparatus according to claim 9.