JP3526342B2 - Sputtering apparatus and sputtering method - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputtering apparatus used for manufacturing a thin film element and a sputtering method using the same, and more particularly to a sputtering apparatus and a sputtering method suitable for mass production of a high magnetic permeability film.

[0002]

2. Description of the Related Art In the sputtering method, discharge plasma of a sputtering gas is generated in the vicinity of a target as a thin film source, and ions in this plasma are accelerated in a cathode fall portion formed in the vicinity of the target to be incident on the target.
This is a technique for ejecting a target material into the gas phase as sputtered particles by this ion bombardment, and depositing the sputtered particles on a substrate arranged at an appropriate position to form a predetermined thin film, which is relatively inexpensive and Various thin films can be formed with a simple device. Therefore, it is widely used for manufacturing thin film functional devices such as semiconductor integrated circuits, thin film display devices, thin film magnetic recording devices, optical recording devices, printer heads, and field emission devices.

The sputtering includes static sputtering in which a substrate is stationary with respect to a target to form a film, and
Although there is moving sputtering that forms a film while moving the substrate, in static sputtering, the substrate installation position is limited to a location where the film thickness and film characteristics are uniform, whereas in moving sputtering the limitation is significantly eased. This is advantageous in production because the substrates can be installed in a large area at once.

In the moving sputtering, as a method of moving the substrate with respect to the target, for example, a method of using a rectangular target, which is used for manufacturing a large-sized thin film display element, and translating the substrate in its minor axis direction is used. ,
For example, there is a method in which a circular target is used to orbit or revolve the substrate around a position eccentric from the target, such as is used in the manufacture of magnetic heads, magnetic disks, and optical disks.

Among these, the revolution or revolution method is advantageous in manufacturing cost because the target size and the sputtering apparatus size can be selected relatively small, and is particularly excellent in manufacturing a large number of small or medium-sized elements at one time. . Further, since it is easy to apply multi-source simultaneous sputtering, it is suitable for manufacturing a thin film of a multi-source element system. In particular, the self-revolving method makes the structure of the substrate holder slightly more complicated than the revolving method, but since a wider area can be used as the substrate installation position than in the case of only the revolving method, it is a very preferable method from the viewpoint of productivity. .

A problem in the case where the substrate holder revolves around the target or revolves around the target is that the incident direction of the sputtered particles on the substrate changes with the rotation, which causes a microscopic structure of the film. Fluctuates in the film growth direction and affects the film characteristics. The influence on the film characteristics is, for example, anisotropy in the film caused by microscopic fluctuation of the film structure, and in the magnetic film, anisotropy of the easy axis of magnetization,
In the ferroelectric film, the anisotropy in the easy polarization direction can be mentioned. From a different point of view, the crystal anisotropy in the case of a crystalline film, the closest atomic arrangement in the case of an amorphous film, etc. Anisotropy etc. can be mentioned.

In particular, since the magnetic anisotropy of a high-permeability film is sensitive to the incident direction of sputtered particles and tends to have anisotropy in that direction when obliquely incident, a conventional magnetic head, particularly a laminated head. It is difficult to revolve or revolve the substrate holder when the magnetic film is formed, and the substrate installation position is limited to just above the erosion part of the target, resulting in a marked loss of productivity.

[0008]

The present invention has been made in view of the above circumstances, and a sputtering apparatus for depositing a predetermined thin film on a substrate while revolving or revolving the substrate holder with respect to the target. And in the sputtering method, the fluctuation of the microscopic structure of the film due to the temporal change of the incident angle to the substrate surface of the sputtered particles, it is possible to compensate for the fluctuation of the film characteristics in the film thickness direction, thereby the film characteristics, In particular, it is an object of the present invention to provide a sputtering device and a sputtering method that can achieve both isotropic property and productivity.

[0009]

In order to solve the above-mentioned problems, the present invention firstly comprises a sputtering chamber provided with a gas supply system and an exhaust system, and a sputtering source installed in the sputtering chamber. A target installed on this sputtering source, a power source for supplying power to the sputtering source to generate plasma in the vicinity of the target, and a substrate for depositing the sputtering particles emitted from the target and supporting the substrate to rotate. A sputtering apparatus comprising a substrate holder capable of revolving, the distance between the revolution axis and the rotation axis of the substrate holder being Ds,
The distance between the center of revolution of the substrate holder and the center of the target in the direction parallel to the target surface is Dt, and the distance between the target surface and the surface of the substrate held by the substrate holder in the direction perpendicular to the target surface is H. , Where D is the distance between the center of the target and the outermost position of the erosion part of the target, and the relationship Ds + Dt ≧ E + 0.1H | Ds−Dt | ≦ E + 0.1H is satisfied. .

Secondly, in the above sputtering apparatus, when the film-forming radius of the substrate from the rotation center of the substrate holder is R, the relation of R ≦ 0.6 (Ds + Dt) is satisfied. Provide a device.

Thirdly, in any one of the above-mentioned sputtering devices, Th / Ts and Ts / Th are non-integer when the revolution period of the substrate holder is Th and the rotation period is Ts. Provide a device.

Fourth, a target is placed in a sputtering source installed in the sputtering chamber to generate plasma in the vicinity of the target, and ions in the plasma are made incident on the target to emit sputtered particles from the target, thereby removing the substrate. A sputtering method for forming a film by depositing sputtered particles on the substrate while revolving around the axis of rotation, wherein the distance between the axis of revolution of the substrate and the axis of revolution is Ds, the center of revolution of the substrate and the center of the target. The distance in the direction parallel to the target surface of Dt, the distance in the direction perpendicular to the target surface between the target surface and the substrate surface held by the substrate holder, and the center of the target and the outermost position of the erosion part of the target. The distance of E,
When the film-forming radius of the substrate from the rotation center of the substrate is R, the relationship of Ds + Dt ≧ E + 0.1H | Ds−Dt | ≦ E + 0.1H R ≦ 0.6 (Ds + Dt) is satisfied. A sputtering method is provided.

Fifth, in the above sputtering method, the film thickness of the film formed by depositing the sputtered particles is T, the film thickness of the film formed in a unit time is t, and the revolution cycle of the substrate is Provided is a sputtering method characterized by satisfying a relationship of T / t ≧ 10Th when Th.

Sixth, in any one of the above sputtering methods, Th / Ts or Ts / Th is a non-integer when the revolution period of the substrate is Th and the rotation period is Ts. I will provide a.

[0015]

[Function] In the conventional rotary sputtering method,
The distance between the revolution axis of the substrate holder (or the substrate) and the rotation axis is Ds, the distance Dt between the revolution center of the substrate holder (or the substrate) and the center of the target in the direction parallel to the target surface, and the erosion of the target center and the target. Distance E from the outermost position of the part, distance H between the target surface and the surface of the substrate held by the substrate holder in the direction perpendicular to the target surface, film formation of the substrate from the rotation center of the substrate holder (or substrate) The radius R, the ratio T / t between the film thickness T of the film formed on the substrate and the film thickness t of the film formed per unit time, the revolution cycle Th of the substrate holder (or the substrate), and the rotation cycle Ts. Since no consideration has been given to the relationship between the parameters, anisotropy occurs in the formed thin film, which may impair good device characteristics. Here, anisotropy is, for example, magnetic anisotropy in the case of a magnetic thin film, polarization anisotropy in the case of a dielectric thin film, and from a different viewpoint, for example, crystal anisotropy in the case of a crystalline thin film. It is anisotropic and is the anisotropy of the atomic arrangement of adjacent atoms in the case of an amorphous thin film. The influence of anisotropy on the thin film element function depends on the type of element, the type of thin film used, or the type of system to which the element is applied. For example, a magnetic thin film used in a laminated magnetic head or a semiconductor integrated circuit. In the case of the ferroelectric thin film used as the gate insulating film, the film having as small anisotropy as possible is desirable in terms of device function, and it has been difficult to obtain such a film by the conventional rotation and revolution sputtering method.

On the other hand, if the relationship between the rotation and revolution parameters is defined according to the present invention, the anisotropy of the formed film is remarkably reduced. It is possible to realize the production of the anisotropic dielectric film by the spin-and-revolution sputtering method with good productivity.

That is, Ds + Dt ≧ E + 0.1H | Ds-Dt | ≦ E + 0.1H If the film is formed under the following conditions, R ≦ 0.6 (Ds + Dt) It becomes possible to form an isotropic film in the region.

Further, the film formation time represented by T / t is T / t ≧ 10Th If it is long enough to satisfy the above condition, an isotropic film will be obtained.

In this case, Th / Ts or Ts / Th
Is an integer, the anisotropy is likely to occur in the film thickness direction because the same position on the substrate returns to the same position with respect to the target after one revolution, but if Th / Ts or Ts / Th is a non-integer. Such anisotropy is alleviated.

[0020]

Embodiments of the present invention will be specifically described below with reference to the accompanying drawings. 1 is a cross-sectional view showing a sputtering apparatus according to an embodiment of the present invention, and FIG. 2 is a bottom view showing a substrate supporting portion used in the apparatus of FIG.

This sputtering apparatus is provided with a sputtering chamber 1, and a substrate supporting portion 2 is provided above the sputtering chamber 1. As shown in FIG. 2, the substrate supporting portion 2 has a horizontally-arranged disk-shaped supporting plate 3, and eight substrate holders 4 for holding a substrate 5 are mounted on the supporting plate 3. It is rotatably supported with its surface horizontal. The support plate 3 is rotatable by a rotary motor 6, and a rotation shaft 7 thereof is provided with a main gear 8 that rotates together with the support plate 3. Further, the rotation shaft 4 a of the substrate holder 4 has a sub gear 9 that rotates together with the substrate holder 4.
Is provided, and the sub gear 9 meshes with the main gear 8. When the support plate 3 is rotated by the motor 6, the substrate holder 4 and the substrate 5 are rotated and revolved.

A sputtering source 10 is provided near the bottom of the sputtering chamber 1 at a position facing the substrate 5. The sputtering power source 1 is used as the sputtering source 10.
3 is connected, and the sputtering target 11 is provided thereon. Further, a magnet 12 is provided inside the sputtering source 10. A shutter 1 that can be opened and closed is provided above the target 11.
4 is provided, and a shielding plate 15 is further provided. The magnet 12 is not essential.

A gas supply system 16 for supplying a sputtering gas into the sputtering chamber 1 and a gas exhaust system 17 for exhausting the inside of the sputtering chamber 1 are connected to the side wall of the sputtering chamber 1.

In the thus constructed sputtering apparatus, the gas supply system 16 supplies the sputtering gas into the sputtering chamber while the exhaust system 17 creates a predetermined vacuum atmosphere in the sputtering chamber 1. Then, while rotating and revolving the substrate 5 held by the substrate holder 4, the power supply 13 supplies power to the sputtering source 10 to generate plasma, and ions of the sputtering gas are made to collide with the target 11 to knock out sputtered particles. , Deposit it on the substrate 5.

Since the present invention defines the relationship between the rotation and revolution parameters in the rotation and revolution sputtering for rotating and revolving such a substrate, each parameter will be described below.

As shown schematically in FIG.
The center position of 1 (short axis center position in the case of a rectangular target) is Ot, the revolution center of the substrate holder 4 is Oh, the rotation center is Os, the Oh-Os distance is Ds, and the target surface between Oh-Ot is parallel. Is the distance between the substrate surface and the target surface in the direction perpendicular to the target surface, and H is the outer radius of the target erosion, that is, the distance from the center position of the target to the outermost circumference of the portion where erosion occurs. Let E be the distance between the center position of the target in the short axis direction and the outermost erosion position in the case of a rectangular target, or the radius of the target when no magnet is used, and let R be the deposition radius from the center of the substrate. When the number of revolutions of the substrate per unit time is ωh and the rotation frequency per unit time is ωs, the revolution period Th and the rotation period Ts are the reciprocals of ωh and ωs, respectively.

In applying the present invention, the target 1
The material of No. 1 is not particularly limited, but a magnetic material is preferable because the effect of the present invention is remarkably exhibited. Examples of the magnetic material used as the target of the present invention include CoCrTa, CoPt, and CoNi, which are raw materials for magnetic recording media.
NiFe, FeAlSi, C which are raw materials for magnetic recording head
Various materials such as oAZrNb, FeTa, FeZr, TbFeCo, MnBi, etc., which are raw materials for magneto-optical recording media can be used. However, the effect of the present invention is obtained when a high magnetic permeability raw material for magnetic recording head is used as a target. Most noticeable. In addition to the magnetic target, a ferroelectric target or the like may be used.

The results of experiments conducted using a high-permeability magnetic material target in which the effects of the present invention are particularly remarkable will be described below. Using the sputtering apparatus having the configuration shown in FIG. 1, using FeAlSi as a sputtering target, first, sputtering was performed with the substrate holder being stationary, and the distribution of the thickness and characteristics of the film formed on the substrate was investigated. Note that here, H = 80 mm and E = 42.
mm.

The results are shown in FIG. In FIG. 4, the horizontal axis represents the substrate position with the origin immediately above the Ot on the substrate surface, the vertical axis represents the film formation rate on the left side, and the internal stress difference in the film surface on the right side.

The film formation rate distribution generally coincides with the distribution that the sputtered particles are emitted from the target surface according to the substantially cosine law. The internal stress difference Δσ is derived from the difference between the radial direction (short-axis direction in the case of a rectangular target) of the target and the warpage amount of the substrate in the direction perpendicular to the target within the film surface. This is a standard for evaluating the physical anisotropy. When Δσ is 0, it is an isotropic film, when it is positive, it has magnetic anisotropy in the direction perpendicular to the target radial direction, and when it is negative, it has magnetic anisotropy in the target radial direction. ing.

As shown in FIG. 4, Δσ is 0 inside the target erosion, positive near the erosion (wider than the erosion region; the spread depends on H), and negative outside the erosion. It is confirmed that the magnetic anisotropy is generated according to the average incident angle on the substrate surface.

Here, although the inclination at the position where the sign of Δσ is inverted or near the position where it is inverted is different depending on E and H, Δσ
The distribution itself is general, and the present invention considers such E and H dependence of the distribution of Δσ as general by experiments and simulations.

Also, when forming a magnetic film other than FeAlSi, a dielectric film, a crystalline film, an amorphous film, or the like, the angle of incidence of the sputtered particles on the substrate surface depends on the magnetic property of the film. , The distribution of FIG. 4 is related to FeAlS
It is not i-specific but general. In other words, a film having an isotropic property is formed inside the erosion where the average incident angle of the sputtered particles is almost perpendicular to the substrate surface, and the average incident angle of the sputtered particles is strongly localized in the direction perpendicular to the radial direction of the target within the film surface. In the vicinity of the erosion immediately above and the erosion outside where the average incident angle of the sputtered particles is localized in the target radial direction within the film plane, it is common to exhibit in-plane anisotropy of opposite signs, respectively. It does not matter at all to develop a general discussion from the relationship of FIG.

Next, Ds, Dt, E, H in the present invention
For the purpose of clarifying the relationship of, the distribution of Δσ when the substrate holder is rotated and revolved using the distribution of FIG. It was investigated by.

5 and 6 are examples of the calculation results,
When E = 42 mm and H = 80 mm, Ds = 0 in FIG.
Δσ when Dt is changed as (rotation / revolution axis match)
FIG. 6 shows a distribution, and FIG. 6 shows a Δσ distribution when Ds is changed with Dt = 0 (the center axis of the target coincides with the revolution axis).

These FIGS. 5 and 6 give critical values within the condition range of the present invention. From these figures, the substrate region R in which isotropic film formation having a circular integration integrated Δσ of 0 is practically possible. In order to have, in FIG. 5, Dt = 50 mm, that is, Ds + Dt = E + 0.1H, | Ds−Dt | = E +
0.1H, and in FIG. 6, Ds = 50 mm, that is, Ds + Dt = E + 0.1H, | Ds−Dt | = E +
It should be 0.1H. And at this time, FIG.
Since R is 30 mm in all of FIG. 6, R = 0.6
(Ds + Dt) is established. That is, Ds = 0 or D
Under the critical condition of t = 0, one point is a condition for obtaining an isotropic film.

As a result of an experiment in which Ds was changed in three ways of 40, 50, and 60 mm under the condition of Dt = 0 to perform experimental verification, the result was almost the same as the calculation result of FIG. It was proven.

Then, the same calculation was carried out for various combinations of Ds, Dt, E, and H, and the condition for having the substrate region R in which the film formation was possible and the integrated integral Δσ was 0 was found. As a result, Ds + Dt ≧ E + 0 .1H (1) | Ds−Dt | ≦ E + 0.1H (2) It was found that an isotropic film can be formed in the region of R ≦ 0.6 (Ds + Dt) (3) by forming a film. It was

FIG. 7 illustrates the calculated points and the scope of the present invention. In FIG. 7, circles and stars are isotropic films, and x is an anisotropic film, and the above formula (1)
It is shown that an isotropic film can be obtained within the range of the formula (2). The conventional film forming conditions are generally Ds + Dt <E.
It is + 0.1H, that is, a region outside the range of the present invention shown by A of FIG. 7, and it can be seen that an isotropic film cannot be obtained.

Further, FIG. 8 shows the distribution of Δσ of the film formed under the conditions shown by the star in FIG. 7 as a typical example, and it is found that an isotropic film is obtained up to R of about 40 mm. It is confirmed.

In FIG. 7, E and H are generally expressed, but in the calculation, E is 30 to 100 mm and H is 50 to 2
It was changed within a range of 00 mm considered practical. Figure 8
Is when E is 42 mm and H is 80 mm.

The above calculation results and some experimental results show that the film formation time (T / t; T is the film thickness, t is the film formation rate) is 1 when Th is 1.
This is an example of 0 times or more, but if the film formation time is too short, it is considered that the isotropic effect due to the circular integration is insufficient, so the time variation of Δσ was simulated under the conditions of FIG. . The result is shown in FIG.

As expected, FIG. 9 shows that when T / t is short, the Δσ modulation in the film thickness direction is not relaxed and oscillates with a wide amplitude with respect to time. As is clear from FIG. 9, if T / t ≧ 10Th (4), Δσ modulation in the film thickness direction is sufficiently relaxed, and the time variation of Δσ can be suppressed within an amplitude that does not substantially cause a problem. Recognize.

The above is the result when the rotation / revolution system in which the ratio of the revolution period to the revolution period is not an integer and is not a whole number is adopted. However, when the ratio of the revolution period to the revolution period is an integer, it is one. Since the same position of the substrate returns to the same position with respect to the target after the revolution, Δσ is less likely to be relaxed in the film thickness direction, and in the case of the present invention in which the Δσ amplitude is shown in FIG. 9 even after T / t ≧ 10 Th. It was about 3 times larger than How much the amplitude of Δσ is suppressed cannot be uniquely determined depending on the film to be formed and the element to which the film is applied, but what kind of element specification is the amplitude of FIG. 9 of the present invention? Is also available. Therefore, it is preferable that Th / Ts and Ts / Th: non-integer (5).

If a magnetic film or a dielectric film is formed under the above conditions, magnetic and dielectric isotropic properties are obtained, and if a crystalline film or an amorphous film is formed under the above conditions, it is crystalline. Although it is possible to obtain isotropic atomic arrangement isotropic, as a result of studying the soft magnetic material film, not only the above isotropic conditions are satisfied, but preferably further additional conditions for soft magnetic expression. Became necessary.

The additional conditions will be described below.
As a result of trying to form a typical soft magnetic film such as a FeAlSi film, a FeZrN film, and a NiFe film under the conditions (1) to (5) described above, a film having magnetic isotropy is obtained. However, a position farther than E + 3 ^1/2 × H from the center of the target on the substrate surface (outside the intersection of the 30 ° line from the outer periphery of the target erosion to the target surface and the substrate surface) is used for a long time period. It was found that the coercive force of the film did not decrease sufficiently when the substrate passed over the entire length, and there was a problem in soft magnetism.

It is empirically known that when the angle of the sputtered particles incident on the substrate is excessively inclined or the film is formed at an excessively low film-forming rate, soft magnetic properties are exhibited. It is derived from the fact that it is difficult.

Therefore, in order to prevent a film from being formed in a portion where the sputtered particles are excessively obliquely incident or a portion where the film forming rate is excessively slow, a substantially circular shape having a radius r centered on the target center is provided between the target and the substrate. As a result of an experiment in which a shield plate having an opening as shown in FIG. 1 was installed parallel to the target surface, when the distance between the shield and the target was h, the radius r of the opening was r ≦ E + 3 ^{1 If} the condition of ^{/ 2} × h (6) is satisfied (that is, the condition that the opening of the shielding plate is within a line of 30 ° from the outer circumference of the target erosion to the target surface is satisfied), the isotropic property and the soft magnetic property are satisfied. It became clear that both are compatible.

When the sputtering method satisfying the condition (6) is adopted, the productivity is slightly reduced as compared with the case where the shielding plate is not provided, but the degree of the reduction is slight, and for example, the existing soft magnetic properties are used. Compared with the method of forming a substrate used for forming an isotropic film by resting it just above the target, the film forming ability of about 3 times can be realized under the condition of (6) equal sign.

The above condition (6) is empirical and useful for forming a soft magnetic film, but it is not necessary to satisfy this with a hard magnetic film, a dielectric film or the like. In addition,
In the above description, when the present invention is applied to the formation of a magnetic film, it is shown that the isotropy of the film is secured and the manufacturability is improved, but one of the main causes of the anisotropy of the film is the substrate. Since it is the incident angle of the sputtered particles on the surface, as described above, the present invention can obtain the same effect not only when forming the magnetic film but also when forming the dielectric film and the like. It is obvious that the same effect can be obtained regardless of whether the film is crystalline or amorphous.

[0051]

According to the present invention, there are provided a sputtering apparatus and a sputtering method capable of forming a thin film having good film characteristics, particularly good isotropy of the film, with high productivity. Therefore, the manufacturability of the thin film element is improved, and the thin film element can be provided at a low price.

[Brief description of drawings]

FIG. 1 is a sectional view showing a sputtering apparatus according to an embodiment of the present invention.

2 is a bottom view showing a substrate supporting portion used in the apparatus of FIG.

FIG. 3 is a diagram schematically showing the sputtering apparatus of the present invention in order to explain the parameters of the present invention.

FIG. 4 is a diagram showing a relationship between a substrate position, a film formation rate, and an internal stress difference in a film surface when sputtering is performed with a substrate holder kept stationary.

FIG. 5 is a Δσ in the case where the substrate holder is rotated and revolved by changing Dt with Ds = 0 using the distribution of FIG. 4;
The figure which shows the result of having carried out the circular integration calculation of the distribution of.

6 is a Δσ in the case where the substrate holder is rotated and revolved by changing Ds with Dt = 0 by using the distribution of FIG. 4;
The figure which shows the result of having performed the circulation integral calculation of the distribution of.

FIG. 7 is a diagram showing a range in which an isotropic film can be obtained, in the coordinates where Dt is plotted on the horizontal axis and Ds is plotted on the vertical axis.

8 is a diagram showing the isotropy of the film when the film is actually formed under the conditions within the range where the isotropic film of FIG. 7 is obtained.

FIG. 9 is a diagram showing a relationship between film formation time and film isotropy.

[Explanation of symbols]

1 ... Sputtering chamber, 2 ... Substrate support part, 3 ... Support plate, 4 ... Substrate holder, 5 ... Substrate, 6 ... Rotation motor, 7 ... Rotation shaft, 8 ... Main gear, 9 ... ... vice gear,
10 ... Sputtering source, 11 ... Sputtering target, 12 ... Magnet, 13 ... Sputtering power supply, 14 ... Shutter, 15 ... Shielding plate, 16 ...
… Gas supply system, 17… Gas exhaust system.

─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Akihiko Ito 6-25-22 Sagamigaoka, Zama City, Kanagawa Prefecture, Sagami Plant, Shibaura Manufacturing Co., Ltd. (56) Reference JP-A-55-50466 (JP, A) 51-121487 (JP, A) JP-A-3-100171 (JP, A) (58) Fields investigated (Int.Cl. ⁷ , DB name) C23C 14 / 00-14 / 58

Claims (7)

(57) [Claims] 1. A sputtering chamber provided with a gas supply system and an exhaust system, a sputtering source provided in the sputtering chamber, a target provided in the sputtering source, and the target by supplying power to the sputtering source. A sputtering apparatus comprising a power source for generating plasma in the vicinity and a substrate holder capable of rotating and revolving while supporting a substrate for depositing sputtered particles emitted from the target, the substrate holder comprising: The distance between the revolution axis and the rotation axis is Ds, the distance between the revolution center of the substrate holder and the center of the target in the direction parallel to the target surface is Dt, and the target surface and the surface of the substrate held by the substrate holder are The distance in the direction perpendicular to the target surface of H, the center of the target and the erosion part In the case where the distance between the outer position and E, Ds + Dt ≧ E + 0.1H | sputtering apparatus characterized by satisfying the relation of ≦ E + 0.1H | Ds-Dt. 2. The sputtering apparatus according to claim 1, wherein a relation of R ≦ 0.6 (Ds + Dt) is satisfied, where R is a film forming radius of the substrate from the rotation center of the substrate holder. 3. The sputtering apparatus according to claim 1, wherein Th / Ts and Ts / Th are non-integers when the revolution period of the substrate holder is Th and the rotation period is Ts. 4. A target between the target and the substrate.
Has a substantially circular opening centered on the center of the
Install a shield plate parallel to the target surface and
When the distance between the plate and the target is h, half of the opening is
The spa according to claim 1, wherein the diameter r satisfies the condition of r ≦ E + 3 ^1/2 × h.
Tattering device. 5. A target is installed in a sputtering source installed in a sputtering chamber, plasma is generated in the vicinity of the target, and ions in the plasma are made incident on the target to emit sputtering particles from the target, and the substrate is rotated around the axis. A sputtering method for depositing sputtered particles on the substrate to form a film while allowing the substrate to have a distance D between the revolution axis and the rotation axis of the substrate.
s, the distance between the center of revolution of the substrate and the center of the target in the direction parallel to the target surface is Dt, and the distance between the target surface and the substrate surface held by the substrate holder in the direction perpendicular to the target surface is H , D is the distance between the center of the target and the outermost position of the erosion part of the target, and R is the film-forming radius of the substrate from the rotation center of the substrate, Ds + Dt ≧ E + 0.1H | Ds−Dt | ≦ E + 0. A sputtering method characterized by satisfying a relationship of 1H R ≦ 0.6 (Ds + Dt). 6. A film thickness of a film formed on a substrate by depositing sputtered particles on the substrate is T, a film thickness of a film formed per unit time is t, and a revolution period of the substrate is Th. The sputtering method according to claim 5, wherein the following relationship is satisfied: T / t ≧ 10Th. 7. The revolution period of the substrate is Th and the rotation period is T.
The sputtering method according to claim 5 , wherein Th / Ts or Ts / Th is a non-integer when s is set.