JPH05156442A - Vacuum film forming device and sputtering device - Google Patents

Abstract

PURPOSE:To enable high-speed film formation with the vacuum film forming device which forms multilayer films by sputtering different atmosphere gases. CONSTITUTION:A substrate 1 is held and moved in film forming chambers 42, 44 by the transporting system. These two film forming chambers 42, 44 are communicated with each other via a transporting system passage space where the transporting system can pass. These chambers are not completely insulated by a gate valve. The atmosphere gases used for the film formation by sputtering in the film forming chambers 42, 44 vary. A buffer chamber 40 is provided between these film forming chambers 42 and 44 and a local discharge pump 45 is provided. Even if the two film forming chambers 42, 44 are communicated with each other, the atmosphere gases varying from each other in the right and left film forming chambers 42, 44 are prevented from mixing with each other by a local discharge device 45 which sucks the inside of the buffer chamber 40 to a vacuum. Since the chambers are not partitioned by the gate valve, the movement of the transporting system is smoothly executed and the film forming speed is improved.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum film forming apparatus having a plurality of film forming chambers for forming films in different atmospheric gases, and a sputtering apparatus for forming a film by sputtering in the vacuum film forming apparatus.

[0002]

2. Description of the Related Art A magneto-optical disk, which is an information recording medium capable of recording / reproducing / erasing, often has a first protection on a transparent plastic substrate 1 typified by polycarbonate as shown in FIG. The film 2, the magnetic film 3, the second protective film 4, and the reflective film 5 are formed in this order by sputtering, and an ultraviolet curable resin is applied and cured on the reflective film 5 to form a UV resin coating 6. .. Usually, the first protective film 2 and the second protective film 2
The protective film 4 is made of various oxides, nitrides, sulfides or composites thereof, and the magnetic film 3 is made of rare earth-transition metal represented by TbFeCo (tellurium, iron, cobalt). The reflective film 5 is made of Al (aluminum) alloy.

[0003]

FIGS. 7 and 8 show an example of a conventional vacuum film forming apparatus for forming a plurality of films on the transparent substrate 1 like the above-mentioned magneto-optical disk. In this vacuum film forming apparatus 11, for example, a circular pallet 12 holding six substrates 1 is rotated and revolved, and a transfer system 13 sequentially transfers the film forming chambers 14, 15 and 16 to each film forming chamber 1.
4, 15 and 16 have predetermined targets 17a, 17
Films are sequentially formed on the surface of the substrate 1 by b, 18, and 19.
The film forming chambers 14, 15 and 16 are partitioned by the gate valve 10. When film forming in each film forming chamber is completed, atmospheric gas is sucked to make a vacuum, and then the gate valve 10 is opened to open the pallet 12. Transfer to the next processing chamber, then gate valve 1
After closing 0, the atmospheric gas is injected again and discharge is performed to perform sputter film formation. In this way, when mass-producing magneto-optical disks, the sputtering deposition of each layer is continuously performed while transporting the substrate 1.

By the way, when the above-mentioned magneto-optical disk is formed by sputtering, the atmosphere gas (sputtering gas) used is often changed according to the film. That is, for the protective films 2 and 4, for example, when SiN is used, a Si target is formed in an atmosphere gas of Ar—N ₂ , and when a SiO type is used, the Si target is A.
It is deposited in r-O _2. In this way, the so-called reactive sputtering method in which the particles sputtered from the target and the atmospheric gas are reacted to obtain a desired film material is
Compared to the case where a SiN target made of a film material is formed in a simple atmosphere of an inert gas Ar, it has an industrially significant advantage that high-speed film formation becomes possible, and a target made of the same material as the film is manufactured. When it is not easy, it is a very important film forming method because it becomes possible to form a film of a desired material with a target that can be easily manufactured by selecting an atmosphere gas.

On the other hand, it is known that in a magnetic film or the like, a large characteristic change occurs when a gas such as nitrogen is mixed, and the atmosphere gas for forming the film needs to be a pure inert gas (for example, Ar). is there. Therefore, conventionally, in the in-line type sputtering apparatus for continuously forming the protective film and the magnetic film, as described above, the film forming chambers 14, 15, 1 are used.
6 was partitioned by the gate valve 10, and the sputter film formation was performed with the edge completely cut off.

As described above, in the conventional method in which the film forming chambers 14, 15 and 16 are partitioned by the gate valve 10 and the sputtering film formation is performed with the edge completely cut off, the number of times of opening and closing the gate valve is very large. Therefore, it is easy to cause mechanical failure,
Keeping a high shield is not easy. Further, the fine metal powder may be scattered by the friction of the sliding portion and become dust in the film forming chamber, which may deteriorate the film forming quality. Further, there is a problem that it is not easy to carry out high-speed transfer while opening and closing the gate valve, and it is difficult to sufficiently increase the film forming speed.

In the magneto-optical disk, degassing of the substrate is a very important item. It is known that a plastic substrate typified by polycarbonate absorbs water in the atmosphere and causes swelling, but in addition to that, the noise level of the disk and carrier level caused by suction of H ₂ O molecules are increased. It causes a major hindrance to the basic recording / reproducing characteristics, such as a decrease in the. Substrate annealing is important as a process to shorten the vacuum evacuation time as much as possible, but if the time from when the substrate in the atmosphere is stored in the vacuum chamber to the start of sputtering film formation is extremely short, the substrate is removed. This is also a problem because the gas cannot be supplied sufficiently. The above-mentioned conventional method has a problem that the processing speed is lowered if a sufficient exposure time in the vacuum chamber is taken so as not to increase the noise level and the carrier level.

The present invention has been made in view of the above circumstances, and in a vacuum film forming apparatus having a plurality of film forming chambers for forming films in different atmospheric gases, use a gate valve for partitioning the film forming chambers. Instead, by effectively preventing the mixture of different atmospheric gases between the adjacent film forming chambers, the main object of the present invention is to facilitate the transfer of the substrate and realize high-speed film formation.

[0009]

A vacuum film forming apparatus of the present invention which solves the above problems has a plurality of film forming chambers in which atmospheric gases used for film formation are different, and a substrate sequentially forms the plurality of film forming chambers. In a vacuum film forming apparatus in which a film is formed and formed on the surface of a substrate, a local exhaust device is provided between a plurality of film forming chambers.

According to a second aspect of the present invention, in the vacuum film forming apparatus according to the first aspect, a buffer chamber is provided between the plurality of film forming chambers.

According to a third aspect of the present invention, in the vacuum film forming apparatus according to the first aspect, the adjacent film forming chambers are not partitioned by a gate valve, and a transfer system for transferring a substrate to each processing chamber is narrow so as to pass therethrough. It is characterized in that they are communicated with each other through a transportation system passage space.

A fourth aspect of the present invention is a sputtering apparatus in a vacuum film forming apparatus used when manufacturing a magneto-optical disk having a structure in which a first protective film, a magnetic film, a second protective film, and a reflective film are sequentially provided on a transparent substrate. Then, the ratio of the number of cathodes for forming the first protective film to the number of cathodes for forming the second protective film is 3:
It is characterized in that it is set to 1.

A fifth aspect of the present invention is a sputtering apparatus in a vacuum film forming apparatus used for manufacturing a magneto-optical disk having a structure in which a first protective film, a magnetic film, a second protective film, and a reflective film are sequentially provided on a transparent substrate. Then, when a high frequency power source is used for forming the films by sputtering, the frequency of the high frequency power source is 13.56 MHz
It is characterized in that they are slightly different from each other in the vicinity of.

According to a sixth aspect of the present invention, there is provided a vacuum film forming apparatus, wherein a circular table for transferring a substrate, which holds a plurality of substrates at an equal pitch in a circumferential direction and is rotatable intermittently, and the plurality of substrates on the circumference. A plurality of processing chambers arranged corresponding to the substrates, and a substrate held by the circular table in a vacuum film forming apparatus in which the substrates are inserted one by one and the substrates for which all the film formations have been completed are taken out one by one. Is set to an odd number, and the circular table is rotated by an integer multiple of the pitch of the substrate arrangement so that all steps of forming the substrate are completed by rotating the table a plurality of times.

According to a seventh aspect of the present invention, in the vacuum film forming apparatus according to the sixth aspect, the rotation pitch of the table is twice the arrangement pitch of the substrates.

According to an eighth aspect of the present invention, in the vacuum film forming apparatus according to the sixth aspect, a part of the plurality of processing chambers is used as a buffer chamber for exposing the substrate to a vacuum atmosphere, and local to the buffer chamber. An exhaust device is provided to degas the substrate.

[0017]

In the above structure, the local evacuation device provided between the adjacent film forming chambers sucks the boundary space between the film forming chambers or the buffer chamber under vacuum so that the film forming chambers differ from each other. The atmospheric gases are prevented from mixing with each other.

In the fourth aspect, when the film thickness of the first protective film is three times the film thickness of the second protective film, the takt times for forming the first and second protective films become equal, The film forming rate is improved as a whole.

In the present invention, since the frequency of the high frequency power source for discharge is different, resonance during discharge is eliminated and stable sputtering film formation is performed.

In claim 6, since an odd number of substrates are held on the circular table, if each processing chamber is moved in steps of, for example, one cycle of all the steps of film formation by rotating the table twice. Can be done,
It is possible to take a long time from the time when the film is carried into the vacuum chamber to the time when the sputtering film formation is started, that is, the time when the film is held in the vacuum chamber. This allows sufficient degassing of the substrate.

[0021]

Embodiments of the present invention will be described below with reference to FIGS. The magneto-optical disk to be manufactured in the embodiment has the structure shown in FIG. 6 described above. That is,
First on a plastic substrate 1 such as polycarbonate
The protective film 2, the magnetic film 3, the second protective film 4, and the reflective film 5 are sequentially sputter-deposited, and an ultraviolet curable resin is applied and cured on the reflective film 5 to form a structure having a UV resin coating 6. Is.
For example, the first protective film 2 is a thin film of SiN and has a thickness of about 1000 Å (angstrom), the magnetic film 3 is a thin film of a magnetic substance TbFeCo and has a thickness of about 250 Å, and the second protective film 4 is a thin film. Is SiN as in the first protective film 2.
And a thickness of about 300Å, and the reflection film 5 is an AlTi thin film with a thickness of about 300Å. The UV resin coating 6 has a film thickness of 10 μm.

A vacuum film forming apparatus 20 for forming the first protective film 2, the magnetic film 3, the second protective film 4, and the reflective film 5 on the substrate 1 by sputtering is a plan view of FIG. 1 and a circle of FIG. Shown in cross-section along the circumference. The vacuum film forming apparatus 20 includes 12 substrate mounting holes 22a provided in a circular vacuum chamber 21 at equal pitches in the circumferential direction as shown in FIG. A circular table 22 that is rotationally driven is accommodated, and 12 processing chambers 23 as individual vacuum chambers are provided adjacent to and adjacent to each position of the substrate 1 of the table 22 (that is, the position of the substrate mounting hole 22a). The processing chambers 23 are communicated with each other through a narrow table passage space (that is, a conveyance system passage space) 24 through which the table 22 can pass. That is, the twelve processing chambers 23 are not completely cut off by the gate valve as in the conventional case.

The first processing chamber 23A of the twelve processing chambers 23 is a substrate supply / removal chamber for supplying / removing the substrate 1. In the substrate supply / removal chamber 23A, the substrates 1 are carried into or out of the substrate supply / removal chamber 23A by the lid / substrate holding members 26 attached to both ends of the substrate supply / removal arm 25. .. The lid / substrate holding member 26 also serves as a lid of the substrate supply / unload chamber 23A.

The second processing chamber 23B is a bombarding chamber in which plasma of Ar atmosphere gas is generated by high-voltage discharge and the substrate 1 is cleaned by the plasma.

The third processing chamber 23C, the fourth processing chamber 23D, and the fifth processing chamber 23E are all first protective film deposition chambers for depositing the first protective film 2 of SiN by sputtering. In the first protective film forming chambers 23C, 23D and 23E,
In order to perform reactive sputtering, a Si target 30 is used as a target and Ar-N is used as an atmosphere gas.
₂ is used.

The sixth processing chamber 23F is a first buffer chamber. The first buffer chamber 23F is a chamber for preventing the atmospheric gases from mixing with each other between the film forming chamber and the film forming chamber that use different atmospheric gases, and includes a local exhaust device 31.

Although detailed description is omitted, the seventh processing chamber 23G is a reverse sputtering chamber for improving the applied magnetic field characteristics of the completed magneto-optical disk. This reverse sputtering chamber 2
In 3G, the inner wall side of the processing chamber is used as an anode and the substrate 1 side (that is, the table 22 side) is used as a cathode, that is, discharge is performed with a polarity opposite to that of normal sputtering film formation.

The eighth processing chamber 23H is a sputtering chamber for a magnetic film in which the magnetic film 3 made of TbFeCo is deposited by sputtering to a film thickness of about 250 Å. In this magnetic film forming chamber 23H,
Using a TbFeCo target 33 as a target,
Ar is used as the atmosphere gas.

The ninth processing chamber 23I is a second buffer chamber,
It has a structure similar to that of the sixth processing chamber 23F and also includes a local exhaust device 34.

The tenth processing chamber 23J is a second chamber made of SiN.
This is a second protective film forming chamber for forming the protective film 4 of FIG. In the second protective film forming chamber 23J, the Si target 35 is used as the target and Ar-N ₂ is used as the atmospheric gas, as in the first protective film forming chamber.

The eleventh processing chamber 23K is a third buffer chamber, has the same structure as the sixth processing chamber 23F or the ninth processing chamber 23I, and also has a local exhaust device 36.

The twelfth processing chamber 23L is a reflection film forming chamber for forming the reflection film 5 of AlTi by sputtering with a film thickness of about 300Å. In this reflection film forming chamber 23L,
An AlTi target 37 is used as a target and Ar is used as an atmospheric gas.

Each of the twelve processing chambers 23 is individually provided with a vacuum suction port 23a. Also, the bombardment room 2
Each of the processing chambers 3B, the reverse sputtering chamber 23G, the magnetic film forming chamber 23H, and the reflective film forming chamber 23L is provided with a gas inlet 23b for injecting Ar gas, and the first protective film forming chambers 23C and 2C are provided.
3D, 23E, and the film forming chamber 23J for the second protective film are A
A gas injection port 23c for injecting r-N ₂ atmosphere gas is provided. In addition, each buffer chamber 23F, 23I, 23K
Also, a gas injection port may be provided in the same manner as in the case of using another usage method.

In the above vacuum film forming apparatus 20, the substrate 1
Are attached to the substrate mounting holes 22a of the table 22 one by one by the lid / substrate holding member 26 provided at the end of the substrate supply / unload arm 25. The table 22 is mounted in the direction of arrow a at each processing takt time. The substrate 1 is rotated by one pitch of the mounting holes 22a (that is, rotated by 30 °).
Are sequentially moved to the next processing chamber.

First, in the bombarding chamber 23B, the substrate 1 is cleaned by Ar plasma generated by high-voltage discharge. Then, the table 22 is rotated by one pitch, the substrate 1 is moved to the initial first protective film for the film-forming chamber 23C, in the first protective film for the film-forming chamber 23C, Ar-N ₂ at atmospheric gas Discharge to generate plasma
A SiN film is formed on the substrate 1 by reactive sputtering of the target 30. In this case, the atmosphere gas is Ar-N
_{Since it is 2} , the Si hit from the Si target 30
SiN particles generated by reacting with the atoms are stacked on the substrate surface to form a SiN film. In the first film forming chamber 23C for the first protective film, a film having a film thickness of about 1/3 of the film thickness 1000Å necessary for the first protective film 2 is formed. Then, SiN film having a film thickness of about 1/3 of 1000Å is formed in the second film forming chamber 23D for the first protective film, and then 1000Å similarly in the film forming chamber 23E for the third first protective film. 1/3 of the film thickness of SiN is formed, and the three first protective film forming chambers 23C, 23D and 23E form the first protective film 2 of SiN having a total film thickness of about 1000Å. It

Next, the substrate 1 is placed in the first buffer chamber 23F.
Move to. In this first buffer chamber 23F,
Since the local exhaust device 31 locally vacuum-evacuates the buffer chamber 23F, Ar in the first protective film deposition chamber 23E is reduced.
This serves to prevent the -N ₂ atmosphere gas and the Ar atmosphere gas in the magnetic film forming chamber 23H in the next step from being mixed with each other.

Then, the substrate 1 is moved to the reverse sputtering chamber 23G. In this reverse sputtering chamber 23G, the inside wall of the processing chamber serves as an anode and the substrate 1 side (table 22 side) serves as a cathode, and discharge is performed with a polarity opposite to that in the film forming chamber, whereby reverse sputtering is performed. By this reverse sputtering process, the applied magnetic field characteristics of the completed magneto-optical disk are improved.

Next, the substrate 1 is moved to the magnetic film forming chamber 23H. In this magnetic film deposition chamber 23H, discharge is performed in an Ar atmosphere gas, and a TbFeCo target 33 is sputtered to deposit about 30 magnetic films 3 on the substrate 1.
A film having a film thickness of 0Å is formed.

Then, the substrate 1 is placed in the second buffer chamber 23I.
Move to. This second buffer chamber 23I is
Functions similarly to the buffer chamber 23F. That is, by performing vacuum suction by the local exhaust device 34, an Ar atmosphere gas in the magnetic film forming chamber 23H and an Ar-N ₂ atmosphere gas in the second protective film forming chamber 23J in the next step are formed. Do not mix with each other.

Next, the substrate 1 is used as the second protective film forming chamber 23.
J into the first protective film forming chamber 23C, 23
Similarly to D and 23E, reactive sputtering is performed with the Si target 35 in the atmosphere gas of Ar—N ₂ to form the second protective film 4 of the SiN film with a film thickness of, for example, about 300 Å.
Since the SiN film thickness 1000Å of the first protective film 2 is about three times as large as the SiN film thickness 300Å of the second protective film 4, the SiN film of the first protective film 2 is formed by three targets in three film forming chambers. (That is, with three cathodes), the tact time for forming the SiN protective film is almost the same for the first protective film and the second protective film, and the film formation processing speed is improved.

Next, the substrate 1 is placed in the third buffer chamber 23K.
Move to. The third buffer chamber 23K also has the same function as that of the first buffer chamber 23F or the second buffer chamber 23I. That is, the second protective film forming chamber 23
In J, the atmosphere gas of Ar—N _{2 and} the atmosphere gas of Ar in the reflection film forming chamber 23L in the next step are prevented from being mixed with each other.

Next, the substrate 1 is moved into the reflection film forming chamber 23L and is sputtered with an AlTi target in an atmosphere of Ar gas to form an AlTi reflection film of about 300.
Film is formed with a film thickness of Å.

Then, the substrate 1 is returned to the initial substrate supply / unload chamber 23A and taken out by the lid / substrate holding member 26 at the end of the substrate supply / unload arm 25. afterwards,
The UV resin film 6 is formed on the reflective film 5 in a separate step.

Each of the above film forming chambers 23C, 23D, 23E,
In 23H, 23J, 23L, the bombarding chamber 23B or the reverse sputtering chamber 23G, a high frequency power source is used as a power source for discharging between the inner wall of the processing chamber 23 which is the cathode and the substrate 1 (that is, the table 22) which is the anode. Set the frequency of each high-frequency power source to the normal 1
It is advisable to make the frequencies slightly different from each other in the vicinity of 3.56 MHz. As a result, the frequencies of the high-frequency power sources used for discharge are all different, so resonance during discharge is eliminated and stable film formation can be performed.

Next, another embodiment of the buffer chamber is shown in FIG. The buffer chamber 40 of this embodiment is provided between the processing chambers as a sufficiently small chamber dedicated to the buffer. For example, the Si target 41 in the atmosphere gas of Ar—N ₂ is used.
A sufficiently narrow dedicated buffer chamber 40 and a local exhaust device 45 are provided between the processing chamber 42 for sputtering at 4 and the processing chamber 44 for sputtering at the TbFeCo target 43 in the atmosphere gas of Ar.

Since the buffer chamber 40 is sufficiently narrow, vacuum suction can be easily performed by the local exhaust device 45, and different atmospheric gases in the adjacent processing chambers 42 and 44 are prevented from mixing with each other. Easy to do.

FIG. 5 shows an embodiment of the invention of claim 6.
The vacuum film forming apparatus 50 is almost the same as the vacuum film forming apparatus 20 described above, except that the table 52 in the vacuum chamber 51 has, for example, 13 (odd) substrates at an even pitch in the circumferential direction. A mounting hole (not shown, but similar to the substrate mounting hole 22a shown in FIG. 3) is provided, and the pitch of the substrate mounting hole in the circumferential direction (360 ° in terms of angle / The rotation is intermittently driven at an angle twice that of 13) (that is, every two pitches). The processing chambers 53 are provided in 13 chambers corresponding to the 13 substrate mounting holes of the table 52. The first processing chamber 52A is a substrate supply / removal chamber for inserting / removing the substrate 1, a third processing chamber 52C, a fifth processing chamber 52E, a seventh processing chamber 52G, a ninth processing chamber 52I, The eleventh processing chamber 52K is a buffer chamber for performing atmospheric gas replacement and substrate degassing. Among these buffer chambers, the buffer chamber 5
2C, 52E, 52I, and 52K are provided with local exhaust devices (not shown, but similar to the local exhaust device 31 in FIG. 2). This prevents the atmosphere gas of Ar—N _{2 in} the SiN film forming chamber and the atmosphere gas of only Ar in the adjacent processing chamber from mixing with each other.

The second processing chamber 52B is filled with A as an atmospheric gas.
The bombarding chamber using r, the fourth processing chamber 52D is Ar-
First to perform sputter deposition of SiN in N ₂ atmosphere gas
A protective film forming chamber, a sixth processing chamber 52F is a reverse sputtering chamber using Ar as an atmospheric gas, and an eighth processing chamber 52H is Ar.
Of the magnetic film forming chamber for performing sputtering film formation of the magnetic substance TbFeCo in the atmosphere gas of
The second protective-film deposition chamber for the sputtering deposition of SiN in ₂ of the atmosphere gas, twelfth processing chamber 52L of is a film formation chamber for a reflective film for performing sputter deposition of AlTi without using ambient gas .. As indicated by an arrow b in the figure, the table 52 is rotated by two pitches of the substrate mounting holes, so that the substrate 1 always jumps over one processing chamber and moves sequentially every other substrate. There is.

In the above vacuum film forming apparatus 50, the substrate 1 loaded into the substrate supply / unload chamber 52A has six buffer chambers 52C, 52E, 52G, 52I, 52J, and 5C.
Move 2L sequentially. After the substrate 1 that has been exposed to the atmosphere is inserted into the vacuum chamber, the degassing of the substrate 1 is performed for a long time in the six buffer chambers that are the same as those in the vacuum chamber as described above. Is done effectively enough. Note that, while the substrate 1 moves from the buffer chamber to the buffer chamber, the bombarding chamber 52B, the first protective film forming chamber 52D, the reverse sputtering chamber 52F, the magnetic film forming chamber 52H, and the second protective film forming chamber 52J. While passing through each of the reflective film forming chambers 52L, the atmosphere gas in each of these processing chambers is an inert gas or a nitrogen gas, and degassing of the substrate 1 is not hindered. Also,
Regarding the influence of passing through the film formation chamber, the rotation speed of the table 52 when moving the substrate 1 is fast and instantaneous, and the discharge voltage is sufficiently lowered when the substrate is moved to form a film. No obstacles will be caused by passing through the room.

When the table 52 rotates once, the above 6
The substrate 1 which has been sufficiently degassed by sequentially moving through the individual buffer chambers includes a bombard chamber 52B, a first protective film forming chamber 52
D, the reverse sputtering chamber 52F, the magnetic film forming chamber 52H, the second protective film forming chamber 52J, and the reflective film forming chamber 52L are processed to form the reflective film 5 shown in FIG. The film is deposited and removed from the substrate supply and removal chamber 52A. That is, one cycle of the entire film forming process is completed by rotating the table 52 twice.

The present invention is not limited to the manufacture of a magneto-optical disk, but can be applied to various vacuum film forming apparatuses for forming a plurality of thin films by sputtering using different atmospheric gases.

In the embodiment, a rotating circular table is used as the transfer system, but each processing chamber is arranged linearly,
For example, it is also possible to adopt a configuration in which the substrate is moved to each processing chamber by a conveyor type linearly moving transfer system. In this case, the substrate supply unit and the substrate removal unit are different places.

[0053]

According to the present invention, since the gate valve is not required, the substrate can be transported smoothly and high-speed film formation can be performed. In that case, even if film formation is performed by sputtering using different kinds of atmospheric gases, a local exhaust device is provided between the film formation chambers or between the film formation chambers. By providing a buffer chamber for effectively performing local evacuation, adverse effects between adjacent film formation chambers do not pose a problem.

Since there is no sliding part such as a gate valve in the vacuum chamber, there is no possibility of dust generation due to sliding, and it is possible to prevent deterioration of film forming quality.

According to the fourth aspect of the present invention, since the film formation rates of the first protective film and the second protective film for each cathode are almost at the same level, the number of cathodes is 3: 1. Since the takt time for forming the protective film is the same as the takt time for forming the thin second protective film, there is no part that becomes a bottleneck for high-speed film formation, and high-speed film formation is possible.

According to the fifth aspect, since the high-frequency power sources used for sputtering film formation are all different, resonance during discharge is eliminated and stable sputtering film formation can be performed.

According to the sixth aspect, it is possible to take a sufficiently long time for the plastic substrate to be exposed in the vacuum chamber, and the basic quality for the magneto-optical disk such as an increase in noise level and a decrease in carrier level. Can be prevented as much as possible. In addition, the degassing process is inevitably performed in the chamber adjacent to the film forming chamber, and the atmospheric gas is prevented from admixing between the adjacent processing chambers. Further, it becomes possible to realize a high-speed film forming process without increasing the size of the entire apparatus.

[Brief description of drawings]

FIG. 1 is a plan view showing an embodiment of a vacuum film forming apparatus of the present invention.

FIG. 2 is a sectional view taken along the circumference of FIG.
1 is a sectional view taken along the line AA of the main part in FIG. 1, and FIG. 4B is a sectional view taken along the line bb of the main part.

3 is an enlarged cross-sectional view of a substrate mounting hole portion of the table in FIG.

FIG. 4 is a sectional view showing another embodiment of the buffer chamber.

FIG. 5 is a plan view of a vacuum film forming apparatus showing an embodiment of the invention of claim 6;

FIG. 6 is a cross-sectional view of essential parts showing a structure of a magneto-optical disk to be manufactured by the vacuum film forming apparatus of the embodiment.

FIG. 7 is a plan view of a main part of a conventional vacuum film forming apparatus.

FIG. 8 is an enlarged side view of the pallet in FIG.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Substrate 2 First protective film 3 Magnetic film 4 Second protective film 5 Reflective film 6 UV resin coating 20, 50 Vacuum film forming device 21, 51 Vacuum tank 22 Table (transport system) 22a Substrate mounting hole 23, 41, 44 processing chambers 23A, 52A substrate supply / unload chambers 23B, 52B bombarding chambers 23C, 23D, 23E, 52D first protective film forming chambers 23F, 23I, 23K, buffer chambers 52C, 52E, 52G, 52I, 52K, 52M buffer chamber 40 buffer chamber 23G, 52F reverse sputtering chamber 23H, 52H magnetic film deposition chamber 23J, 52J second protective film deposition chamber 23L, 52L reflective film deposition chamber 31, 34, 36, 45 local exhaust Device 30 Si target (target for first protective film) 33 TbFeCo target (target for magnetic film) 35 Si target (Target for the second protective layer) 36 AlTi target (target for reflection film)

Claims (8)

[Claims] 1. A vacuum film forming apparatus, comprising: a plurality of film forming chambers used for film formation, each of which has a different atmosphere gas, and a substrate is sequentially sent through the plurality of film forming chambers to form a film on a substrate surface. A vacuum film forming apparatus comprising a local exhaust device provided between a plurality of film forming chambers. 2. The vacuum film forming apparatus according to claim 1, wherein a buffer chamber is provided between the plurality of film forming chambers. 3. The adjacent film forming chambers of the plurality of film forming chambers are not partitioned by a gate valve, and a narrow transfer system passage space through which a transfer system for transferring a substrate to each processing chamber can pass. It is connected, and it is characterized by the above-mentioned.
The vacuum film forming apparatus described. 4. A first protective film, a magnetic film, and a second film on a transparent substrate.
A sputtering apparatus in a vacuum film forming apparatus used for manufacturing a magneto-optical disk having a protective film and a reflective film in that order, wherein the number of cathodes for forming the first protective film and the second protective film are formed. The sputtering apparatus is characterized in that the ratio with the number of cathodes is 3: 1. 5. A first protective film, a magnetic film, and a second film on a transparent substrate.
A sputtering apparatus in a vacuum film forming apparatus used when manufacturing a magneto-optical disk having a protective film and a reflective film in this order, wherein the frequency of the high frequency power source is 13 when a high frequency power source is used for sputtering film formation of each of the films. A sputtering device characterized in that they are slightly different from each other in the vicinity of 0.56 MHz. 6. A circular table for transporting a substrate, which holds a plurality of substrates at equal pitches in the circumferential direction and can rotate intermittently, and is arranged on the circumference corresponding to the plurality of substrates. A plurality of processing chambers, and a vacuum film forming apparatus in which the substrates are inserted one by one and the films that have been completely formed are taken out one by one, and the circular table holds an odd number of substrates,
A vacuum film forming apparatus, wherein the circular table is rotated by an integer multiple of the pitch of the substrate arrangement so that all steps of film formation on the substrate are completed by rotating the table a plurality of times. 7. The vacuum film forming apparatus according to claim 6, wherein the rotation pitch of the table is twice the arrangement pitch of the substrates. 8. A part of the plurality of processing chambers is used as a buffer chamber for exposing the substrate to a vacuum atmosphere, and a local exhaust device is provided in the buffer chamber to degas the substrate. The vacuum film forming apparatus according to claim 6, wherein