JP2006009134A - Production apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a vessel for vapor deposition, which is made of an inexpensive and easily formable material, does not cause clogging even when vapor-depositing a vapor deposition material, and makes vapor deposition stably proceed therein, and to provide a vapor deposition apparatus. <P>SOLUTION: The vessel for vapor deposition has a bellows structure in the side face of a lid, or makes the lid formed so as to have a larger diameter than the opening of a vapor deposition source and directly contact with a heating part. Thus formed structure makes the vicinity of the opening of the lid hardly cooled; hardly causes a temperature difference between the sack body and the lid of the vessel; accordingly prevents the vaporized material from clogging at the opening; makes vapor deposition stably proceed for a long period of time; stabilizes a vapor deposition rate; and improves the productivity. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

The present invention relates to a manufacturing apparatus including a film forming apparatus used for forming a film that can be formed by vapor deposition (hereinafter referred to as vapor deposition material).

  In recent years, research on a light-emitting device having an electroluminescence element (hereinafter referred to as an EL element) as a self-luminous light-emitting element has been actively conducted. This light emitting device is also called an organic EL display or an organic light emitting diode. These light-emitting devices have features such as fast response speed, low voltage, and low power consumption driving suitable for moving image display, so next-generation displays such as new-generation mobile phones and personal digital assistants (PDAs) It is attracting a lot of attention.

  An EL element using a layer containing an organic compound as a light-emitting layer has a structure in which a layer containing an organic compound (hereinafter referred to as an EL layer) is sandwiched between an anode and a cathode. In the EL layer, holes and electrons recombine to generate excitons, and the energy difference when returning to the ground state is extracted as light. Note that light emission from the EL element includes light emission (fluorescence) when returning from the singlet excited state to the ground state and light emission (phosphorescence) when returning from the triplet excited state to the ground state.

  The EL layer has a laminated structure represented by “hole transport layer / light-emitting layer / electron transport layer”, and the EL material for forming the EL layer is a low molecular (monomer) material and a high molecular (polymer). The low molecular weight material is generally formed by using a vapor deposition apparatus.

  In a conventional vapor deposition apparatus, a substrate is set on a substrate holder, and an EL material, that is, a container (or a vapor deposition boat) filled with the vapor deposition material, a shutter for preventing the EL material to be sublimated from rising, and the EL material in the container are heated. And a heater. Then, the EL material heated by the heater is sublimated and deposited on the rotating substrate. At this time, in order to form a uniform film, the distance between the substrate and the container filled with the vapor deposition material is 1 m or more.

  In the conventional vapor deposition apparatus and vapor deposition method, when an EL layer is formed by vapor deposition, most of the sublimated EL material is the inner wall of the deposition chamber of the deposition apparatus, the shutter or the deposition shield (the deposition material adheres to the inner wall of the deposition chamber). It was attached to a protective plate to prevent this. Therefore, when the EL layer is formed, the utilization efficiency of the expensive EL material is extremely low, about 1% or less, and the manufacturing cost of the light emitting device is very expensive.

  Moreover, in order to obtain a uniform film in the conventional vapor deposition apparatus, the distance between the substrate and the vapor deposition source is 1 m or more. For this reason, the vapor deposition apparatus itself is increased in size, and the time required for evacuating each film formation chamber of the vapor deposition apparatus becomes long, so that there is a problem in that the film formation rate is reduced and the throughput is lowered. In addition, when a large-area substrate is used, the film thickness tends to be non-uniform between the central portion and the peripheral portion of the substrate. Further, since the vapor deposition apparatus is a structure that rotates the substrate, the vapor deposition apparatus is intended for a large-area substrate. There was a limit.

In view of these points, the applicant has proposed a vapor deposition apparatus (Patent Document 1 and Patent Document 2) as one means for solving the above-described problems.
JP 2001-247959 A JP 2002-60926 A

When the substrate becomes large, a large amount of vapor deposition material is required. Therefore, in the case where a film is formed on a large substrate having a side exceeding 1 meter, a small container is quickly emptied. For this reason, the number of containers is increased and frequently replaced. However, in the case of a large substrate, the film formation time becomes long, so that there is a high possibility that the material is lost during the film formation. Furthermore, since it has an extra heating time, a throughput will fall. Therefore, in order to perform vapor deposition for a long time, it is necessary to enlarge the container.

In order to replace the container set in the vapor deposition source, it is necessary to open the upper part of the vapor deposition source from the viewpoint of easy removal. Further, a gap for taking out must be provided between the vapor deposition source for setting the container, and the heating unit and the container do not come into contact with each other, so that heating by radiant heat is the main heating method.

However, since the upper part of the vapor deposition source is opened, there is a problem that the radiant heat easily escapes and the upper part of the container is difficult to be heated. Therefore, a temperature difference is generated between the lower part and the upper part of the container, and the evaporated material is cooled at the upper part of the container and clogged at the opening. In particular, a vapor deposition material having a high vapor deposition temperature is likely to cause a temperature difference and is difficult to deposit.

An object of the present invention is to provide a manufacturing apparatus with excellent deposition stability and throughput by efficiently using heating of a deposition source in a manufacturing apparatus for performing deposition.

The configuration of the invention disclosed in this specification is a vapor deposition apparatus that vaporizes a material evaporated by heating a vapor deposition source on the substrate, and the vapor deposition source includes a heating unit and a container having a cavity filled with the material. And the upper side surface of the container has a bellows structure.

According to the present invention, since the upper part of the container has a bellows structure, the surface area of the side surface of the upper part of the container is increased as compared with a container without the bellows structure. For this reason, the upper portion of the container has a higher absorption of radiant heat and is less likely to cool, and thus has a structure that prevents the material from clogging in the opening.

According to another aspect of the present invention, there is provided a vapor deposition apparatus for depositing a material evaporated by heating a vapor deposition source on a substrate, the vapor deposition source comprising a heating unit and a container having a cavity filled with the material. The upper portion of the side surface of the container is coated with a material having a higher radiant heat absorption rate than the material constituting the container.

According to the present invention, since the material having a higher radiant heat absorption rate than the material constituting the container is coated on the upper part of the side surface, the upper part of the container absorbs radiant heat. Furthermore, since the container and the coating film are in contact with each other, the thermal conductivity is improved as compared with the case of heating with radiant heat. Therefore, the upper part can be heated efficiently, there is no temperature difference between the upper part and the lower part of the container, and clogging of the material at the opening can be prevented.

According to another aspect of the present invention, there is provided a vapor deposition apparatus for depositing a material evaporated by heating a vapor deposition source on a substrate, the vapor deposition source comprising a heating unit and a container having a cavity filled with the material. The upper side surface of the container is coated with a material having a higher radiant heat reflectance than the material constituting the container.

According to the present invention, when a material having a high radiant heat reflectivity is coated, radiant heat from the heating unit is reflected by the container, and a temperature drop of the heating unit main body can be prevented. Therefore, it becomes possible to deposit at a stable temperature.

According to another aspect of the present invention, there is provided a vapor deposition apparatus for depositing a material evaporated by heating a vapor deposition source on a substrate, the vapor deposition source comprising a heating unit and a container having a cavity filled with the material. In addition, a bellows structure is provided on the upper side surface of the container, and the container is further coated with a material having a higher radiant heat absorption rate or a material having a higher radiant heat reflectivity than the material constituting the container.

According to the present invention, by having the bellows structure and the coating film on the upper part of the container, the upper part of the container can be efficiently heated, and furthermore, the temperature of the heating part main body can be prevented from being lowered. It becomes possible.

According to another aspect of the invention, there is provided a vapor deposition apparatus for depositing a material evaporated by heating a vapor deposition source on a substrate, wherein the second container different from the first container in the vapor deposition source is provided. It has an exchange mechanism, and heats the vapor deposition source to form a film.

According to the present invention, even when the upper part of the vapor deposition source is open, the container can be heated without clogging the material in the opening part of the upper part of the container. Therefore, it becomes possible to exchange the 1st container with which the material became empty by heating, and the 2nd container with which the material was filled. Therefore, the material can be exchanged without being released to the atmosphere, and stable deposition can be performed for a long time, so that the apparatus has a high throughput.

Moreover, this invention has the following structures, It is characterized by the above-mentioned.

The lid is brought into contact with the heater part of the vapor deposition source using a container having a structure in which the outer peripheral end of the upper part of the container (hereinafter referred to as a lid) protrudes wider than the opening of the vapor deposition source. When this structure is used, the lid of the container is in contact heat conduction, so that the lid can easily maintain a high temperature. The material of the container lid is preferably a material having high thermal conductivity. This is for efficiently transferring heat from the heater. Such a vapor deposition apparatus using a crucible can suppress the temperature difference of the crucible to be small, and can perform vapor deposition stably for a long time.

The configuration of the invention disclosed in this specification is a vapor deposition apparatus that forms a film on a substrate by evaporating a material by heating an evaporation source, and the vapor deposition source includes a heating unit and a container filled with the material to be vapor deposited, And a cavity for inserting the container. The heating unit is disposed around the cavity. Here, the outer peripheral end portion of the lid of the container is projected outward from the body portion so as to be wider than the opening portion of the vapor deposition source, and this portion is in contact with the heating portion.

According to the present invention, the lid of the container has a structure having an eaves, and this part is in direct contact with the heating part, so that the upper part of the container is heated not only by radiant heat but also by the direct heating part. Further, heating is performed directly from the lid of the container to the body portion by heat conduction. With this configuration, the temperature difference between the lid and the body of the container is reduced, and the material can be prevented from being clogged near the opening of the lid.

According to another aspect of the invention, there is provided a vapor deposition apparatus for depositing a material evaporated by heating an evaporation source on a substrate. The vapor deposition source includes a heating unit, a container filled with a material to be deposited, and a container. And a cavity to be inserted. Here, the outer peripheral end portion of the lid of the container is projected outward from the body portion so as to be wider than the opening portion of the vapor deposition source, and this portion is in contact with the heating portion. Furthermore, it is characterized by being coated with a material having better thermal conductivity than the material constituting the container lid.

According to the present invention, since the material having better thermal conductivity than the material constituting the lid of the container is coated, the lid of the container can better transfer the heat of the heating unit. Furthermore, since the trunk | drum of a container and the coating film of a lid are contacting, it can heat also to a trunk | drum more efficiently. With this configuration, the temperature difference between the lid and the body of the container is reduced, and clogging of the material at the opening can be prevented.

With these configurations, vapor deposition is possible even in a vapor deposition apparatus that can prevent clogging of the opening due to vapor deposition material that has occurred because the temperature in the vicinity of the lid of the container, particularly the lid opening, is low, and the evaporation source can be removed from the heating unit. It becomes possible to stabilize the rate and increase the volume of the deposition container. As a result, the product quality can be kept stable, the throughput can be improved, and the price can be reduced.

In the above configuration, the container lid and the container body may be made of a material having a high thermal conductivity. More preferably, one or more of gold, silver, platinum, copper, aluminum, nickel, beryllium, silicon carbide and carbon nitride, boron nitride, silicon carbide, beryllium oxide, and aluminum nitride, which are materials having high thermal conductivity, are used. In view of reactivity with the vapor deposition material, workability, and the like, it is desirable to use them appropriately.

In the above configuration, the lid of the container is made of the same material as the conventional vapor deposition container, and the parts to be coated are gold, silver, platinum, copper, aluminum, nickel, beryllium, which are highly heat conductive substances. One or more of silicon carbide and carbon nitride, boron nitride, silicon carbide, beryllium oxide, and aluminum nitride may be used as appropriate in consideration of operating temperature, reactivity with vapor deposition materials, workability, thermal expansion coefficient, etc. desirable.

The manufacturing apparatus according to the present invention prevents the clogging of the container filled with the vapor deposition material in the film forming process for vapor deposition by warming the upper part of the container into which the vapor deposition material is placed, that is, the lid, and is stable for a long time. Therefore, an excellent manufacturing apparatus with high throughput can be obtained.

Embodiments of the present invention will be described below. However, the present invention can be implemented in many different modes, and it is easy for those skilled in the art to change the form and details in various ways without departing from the spirit and scope of the present invention. Understood. Therefore, the present invention is not construed as being limited to the description of this embodiment mode.

(Embodiment 1)
FIG. 1 shows a perspective view of a container 100 according to the manufacturing apparatus of the present invention. The inside of the container 100 is hollow, and includes copper phthalocyanine (CuPc), 4,4′-bis- [N- (naphthyl) -N-phenyl-amino] biphenyl (α-NPD), tris-8-quinori. Vapor deposition materials necessary for organic EL elements such as nonato aluminum complex (Alq ₃ ) and lithium fluoride (LiF) are filled. A bellows portion 110 having a bellows structure is provided on the upper side of the container 100, and an opening 120 for allowing vapor deposition particles to jump out is provided on the top surface portion.

The material of the container is tantalum, molybdenum, tungsten, titanium, boron nitride, more preferably gold, silver, platinum, copper, aluminum, nickel, beryllium, silicon carbide, silicon nitride, boron nitride, silicon carbide, silicon oxide, An arbitrary material such as beryllium oxide or aluminum nitride may be selected, and the thickness of the container can be appropriately determined in consideration of the internal volume, shape, or thermal conductivity of the vapor deposition material.

The opening area of the opening 120 may be only a part of the upper surface portion, but it is needless to say that the entire surface may be opened.

Furthermore, the container 100 may be divided into an upper part and a lower part. FIG. 2 shows a shape divided into an upper part 111 and a lower part 121 in the container 100, and the upper part 111 is a lid of the lower part 121. In FIG. 2, a bellows structure is provided on the side surface of the upper part 111, and the upper part and the lower part are screwed by 122 screw portions. Moreover, it may take the form of fitting so that it may cover not a screw but a cover. Although not shown in the figure, an inner lid may be provided between the upper part and the lower part to prevent bumping.

Further, the convex portion of the bellows portion may coincide with the height of the side surface of the container, or may protrude from the side surface.

FIG. 3 shows a state where the container 100 is set in the vapor deposition source 200. Although the vapor deposition source 200 is provided with the heating part 210 and the inside shows the mechanism which can be heated with the heater 220, it is not restricted to this. When vapor deposition is performed, the heating unit 210 is heated, and the container is heated by the radiant heat.

Here, the surface of the bellows portion 110 is preferably coated with a black material such as carbon black or ceramic that easily absorbs radiant heat. In this case, since the radiant heat absorption rate is higher in the upper part of the container than in the lower part of the container, the upper part of the container efficiently absorbs the radiant heat, conducts heat to the container, hardly causes a temperature difference between the upper and lower parts of the container, and is clogged at the opening. Can be prevented.

Preferably, the surface of the bellows portion 110 is preferably coated with a material having a higher radiant heat reflectance than the container material. For example, when the container is titanium, silver, gold, platinum, aluminum, copper, nickel It is desirable that a metal film such as beryllium, silicon carbide, carbon nitride, silicon nitride, boron nitride, silicon carbide, silicon oxide, beryllium oxide, or aluminum nitride is coated. In this case, the metal film becomes a radiant heat reflecting film, but also absorbs radiant heat. For this reason, the radiant heat from the heater is reflected and the heater is heated again, preventing the temperature of the heater from decreasing, and the metal film itself also absorbs heat, and the absorbed heat conducts heat to the contacted container. I'll do it. Accordingly, the upper part of the container can be heated more efficiently than radiant heat, the temperature stability of the vapor deposition source is improved, and the temperature difference between the upper part and the lower part of the container is reduced, so that clogging at the opening can be prevented. .

The upper part of the container is not provided with a bellows structure, and clogging can be prevented even if only the radiant heat absorption film or the radiant heat reflection film is coated. Therefore, as a configuration of the upper part of the container, an arbitrary combination of a bellows structure, a radiant heat absorption film, and a radiant heat reflection film can be used as a deposition source container.

A manufacturing apparatus using such a container can perform vapor deposition without clogging at the opening of the container because the temperature difference between the upper part and the lower part of the container becomes small even when a deposition material having a high deposition temperature is filled. This is a highly productive device that can be deposited over a long period of time.

(Embodiment 2)
FIG. 4A shows an overall view of a vapor deposition container 400 according to the manufacturing apparatus of the present invention. The deposition container 400 is divided into a bottomed cylindrical body 401 (a deposition material filling portion) and a lid 403 having an opening 402. The inside of the container 400 is hollow, and includes copper phthalocyanine (CuPc), 4,4′-bis- [N- (naphthyl) -N-phenyl-amino] biphenyl (8-NPD), tris-8-quinori. Vapor deposition materials necessary for electroluminescent elements such as nonato aluminum complex (Alq ₃ ), lithium fluoride (LiF), and molybdenum oxide (MoO _x ) are filled. Deposition is performed using an evaporation source filled with a desired material in accordance with the layer to be deposited.

FIG. 4B shows a state where the container 400 is set in the vapor deposition source 404. The vapor deposition source 404 is provided with a heating unit. In FIG. 4B, a mechanism that can be heated by the heater 405 is shown, but the present invention is not limited to this.

As shown in FIG. 4B, the lid 403 is manufactured so as to be larger than the length of the opening of the vapor deposition source 404, and is in direct contact with the heater portion of the vapor deposition source when actually used. . By doing so, the lid 403 is warmed by contact heat conduction. For this reason, heat can be efficiently transferred from the heater to the lid 403, and it becomes easier to maintain a higher temperature than when radiant heat is used. At the same time, the body 401 is heated by the radiant heat generated by the heater 420.

As described above, the lid 403 is warmed efficiently and further conducts heat to the body 401. Since it is difficult for a temperature difference to occur between the body 401 and the lid 403, clogging at the opening can be prevented. In addition, since the lid 403 can be satisfactorily heated, the opening 402 can be made larger than a conventionally used lid. Therefore, the clogging at the opening can be further prevented.

Note that the material of the container 400 is tantalum, molybdenum, tungsten, titanium, boron nitride, and more preferably gold, silver, platinum, copper, aluminum, nickel, beryllium, silicon carbide, carbon nitride, and nitride, which are highly thermally conductive substances. It is desirable to use boron, silicon carbide, silicon oxide, beryllium oxide, or aluminum nitride. The thickness of the container 400 can be determined as appropriate in consideration of the content, shape, or thermal conductivity of the vapor deposition material.

The lid 403 may be made of a material having good thermal conductivity. However, the lid 403 is made of a conventionally used material such as titanium or ceramics, and then gold, silver, platinum, copper, aluminum, nickel, beryllium, Coating may be performed with a metal having good thermal conductivity such as silicon carbide, carbon nitride, silicon nitride, boron nitride, silicon carbide, silicon oxide, beryllium oxide, and aluminum nitride. In this case, it is desirable to select an appropriate material in consideration of the material to be coated, the material to be coated, and the thermal expansion coefficient of the body 401.

The surface of the body 401 may be coated with a black material such as carbon black or ceramic that easily absorbs radiant heat. As a result, the body 401 absorbs radiant heat more efficiently, and the temperature difference between the body 401 and the lid 403 can be reduced.

FIG. 5A shows a cross-sectional view of the container 400. In this figure, the body portion 401 and the lid 403 of the vapor deposition container are screwed by the screw portion 404. Further, it may be in a form of fitting so as to cover the cover 403 instead of the screw. Further, as shown in FIG. 5B, an inner lid 405 may be provided between the lid and the body portion to prevent bumping.

As another structure, as shown in FIGS. 6A and 6B, when a body 602 having a shape in which a rod-shaped metal 601 is inserted into the center and bonded to the bottom of the body is used, the body 602 is used. The vapor deposition material is warmed more uniformly between the central portion and the peripheral portion. This is particularly effective when the vapor deposition material has a high sublimation temperature or when the amount of the vapor deposition material placed in the container is large.

A manufacturing apparatus using such a container can perform vapor deposition without clogging at the opening of the container because the temperature difference between the upper part and the lower part of the container becomes small even when a deposition material having a high deposition temperature is filled. This is a highly productive device that can be deposited over a long period of time.
(Embodiment 3)
FIG. 7 is a top view of a manufacturing apparatus using the present invention.

In FIG. 7A, 700 is a substrate, 701 is a film formation chamber, 702 and 703 are transfer chambers, 704 is a container setting chamber, 705 is a deposition source driving robot, 706 is a container transfer robot, and 707 is a container setting rotation. Tables 708, 709, and 710 are shutters for partitioning each room, and 711 is a door.

The substrate 700 is transferred from the transfer chamber 702 into the film formation chamber 701. In the case where the vapor deposition is selectively performed, the vapor deposition is performed after the vapor deposition mask and the substrate are aligned.

Two containers 713 filled with EL material are set in the vapor deposition source 712. Although not shown, a sliding shutter is provided on the top of each container. Although FIG. 7 shows a vapor deposition source having two containers, three or more containers may be provided, and the present invention is not limited to the configuration of FIG. The two containers may be filled with the same material, or may be filled with different materials such as a host material and a dopant material.

The container 713 set in the vapor deposition source 712 is heated, and when heated above the vapor deposition temperature, the vapor deposition particles jump out from the opening at the top of the container. Here, it waits until a predetermined film-forming rate. According to the present invention, since the upper part of the container is difficult to cool, even when the vapor deposition source 712 is open, the material is not easily clogged by the opening, and a stable film formation rate can be obtained. After stabilization at a predetermined film formation rate, a substrate shutter (not shown) is opened, and an evaporation source driving robot 705 for moving the evaporation source 712 is driven to perform evaporation on the substrate. By repeating the reciprocation of the vapor deposition source, a uniform film is formed on the substrate 700. After the deposition is completed, the substrate shutter is closed and the substrate 700 is transferred to the transfer chamber 703. By repeating this vapor deposition, an EL material can be formed on a large number of substrates.

Further, the manufacturing apparatus of FIG. 7 is provided with a mechanism for exchanging the container set in the vapor deposition source 712. Hereinafter, the procedure will be described with reference to FIG.

The container installation chamber 704 is vented to atmospheric pressure. At this time, since the shutter 710 is provided, the degree of vacuum in the transfer chamber 701 remains unchanged. After opening the door 711 and setting the container 713 filled with the EL material on the rotating table 707 for container installation, the door is closed and pulled until the degree of vacuum is the same as or lower than that of the transfer chamber. Since the container installation chamber 704 has a smaller internal volume than the film formation chamber 701, it can be decompressed to a predetermined pressure in a short time. When the predetermined degree of vacuum is reached, the shutter 710 is opened, the container transport robot 706 is driven, the first container set in the vapor deposition source 712 is taken out, and the container is set on the container mounting turntable 707. The container mounting turntable 707 is rotated, the second container filled with the material is taken out, and set in the vapor deposition source 712.

In addition, the conveyance mechanism in this invention is limited to the structure which the knob part of the container conveyance robot 706 hooks and conveys the inner side of the container 713 from the upper direction of the container 713 as described in FIG.7 (B). Instead of this, a configuration may be adopted in which the side of the container 713 is pinched and conveyed.

Note that the container 713 set on the container mounting turntable 707 may be heated to a temperature at which the material does not fly with a built-in heater while evacuating, and heating after replacement is performed. Time is shortened, resulting in a device with high throughput.

The present invention configured as described above will be described in more detail with the following examples, but the present invention is not limited to the following examples.

FIG. 8 shows a top view of a multi-chamber manufacturing apparatus. The manufacturing apparatus shown in FIG. 8 has a chamber arrangement for improving throughput.

FIG. 8 shows shutters 800a to 800n, a substrate loading chamber 801, a sealing / unloading chamber 802, transfer chambers 803 and 804, film formation chambers 805, 806 and 807, container installation chambers 808a to 808d, This is a multi-chamber manufacturing apparatus including a processing chamber 809, a sealing substrate load chamber 810, and a sealing chamber 811.

Hereinafter, a procedure for manufacturing a light-emitting device by carrying a substrate provided with an anode (first electrode) and an insulator (partition wall) covering the end of the anode in advance into the manufacturing apparatus shown in FIG. 8 will be described. Note that in the case of manufacturing an active matrix light-emitting device, a plurality of thin film transistors (current control TFTs) and other thin film transistors (such as switching TFTs) connected to an anode are provided in advance on a substrate, and are formed of thin film transistors. A drive circuit is also provided. In addition, when a simple matrix light-emitting device is manufactured, the manufacturing apparatus illustrated in FIG. 8 can be used.

First, the substrate is set in the substrate loading chamber 801. Substrate sizes of 320 mm × 400 mm, 370 mm × 470 mm, 550 mm × 650 mm, 600 mm × 720 mm, 680 mm × 880 mm, 1000 mm × 1200 mm, 1100 mm × 1250 mm, and even 1150 mm × 1300 mm can be handled.

A substrate set in the substrate loading chamber 801 (a substrate provided with an anode and an insulator covering an end portion of the anode) is transferred to the transfer chamber 803. Note that the transfer chamber 803 is provided with a transfer mechanism (such as a transfer robot) and a vacuum exhaust unit for transferring or reversing the substrate, and the other transfer chamber 804 is similarly provided with a transfer mechanism and a vacuum exhaust unit. It is. A robot provided in the transfer chamber 803 can reverse the front and back of the substrate, and can reversely carry the substrate into the film formation chamber 805. In addition, the transfer chamber 803 can maintain atmospheric pressure or vacuum. The transfer chamber 803 is connected to an evacuation treatment chamber, and can be evacuated to a vacuum, or after evacuation, an inert gas can be introduced to an atmospheric pressure.

The vacuum evacuation chamber is provided with a magnetic levitation turbo molecular pump, a cryopump, or a dry pump. As a result, the ultimate vacuum of the transfer chamber connected to each chamber can be set to 10 ⁻⁵ to 10 ⁻⁶ Pa, and the back diffusion of impurities from the pump side and the exhaust system can be controlled. In order to prevent impurities from being introduced into the apparatus, an inert gas such as nitrogen or a rare gas is used as the introduced gas. These gases introduced into the apparatus are those purified by a gas purifier before being introduced into the apparatus. Therefore, it is necessary to provide a gas purifier so that the gas is introduced into the vapor deposition apparatus after being highly purified. Thereby, oxygen, water, and other impurities contained in the gas can be removed in advance, so that these impurities can be prevented from being introduced into the apparatus.

In addition, before setting in the substrate loading chamber 801, a porous sponge (typically containing a surfactant (weak alkaline) on the surface of the first electrode (anode) in order to reduce point defects) It is preferable to remove dust on the surface by washing with PVA (polyvinyl alcohol), nylon or the like. As a cleaning mechanism, a cleaning device having a roll brush (manufactured by PVA) that rotates around an axis parallel to the surface of the substrate and contacts the surface of the substrate may be used, or may rotate around an axis perpendicular to the surface of the substrate. You may use the washing | cleaning apparatus which has a disk brush (product made from PVA) which contacts the surface of a board | substrate while moving.

In addition, in order to prevent moisture from entering from the deposition surface on the substrate side, it is preferable to perform vacuum heating immediately before deposition of the film containing the organic compound, and the pretreatment chamber 809 in which the substrate can be heated in vacuum from the transfer chamber 803. In order to thoroughly remove moisture and other gases contained in the substrate, annealing for deaeration is performed under vacuum (5 × 10 ⁻³ Torr (0.665 Pa) or less, preferably 10 ^−4. 10 ⁻⁶ Pa). In particular, when an organic resin film is used as a material for an interlayer insulating film or a partition, depending on the organic resin material, moisture may be easily adsorbed and degassing may occur. Therefore, before forming a layer containing an organic compound, It is effective to perform vacuum heating for removing adsorbed moisture by performing natural cooling for 30 minutes after heating for 100 minutes to 100 ° C., preferably 150 ° C. to 200 ° C., for example, for 30 minutes or more.

Further, if necessary, a hole injection layer made of a polymer material may be formed in the film formation chamber 807 by an inkjet method, a spin coating method, a spray method, or the like under atmospheric pressure or reduced pressure. Further, after coating by the ink jet method, the film thickness may be made uniform by a spin coater. Similarly, after coating by a spray method, the film thickness may be uniformed by a spin coater. Alternatively, the film may be formed by an inkjet method in a vacuum with the substrate placed vertically.

For example, a poly (ethylenedioxythiophene) / poly (styrenesulfonic acid) aqueous solution (PEDOT / PSS) that acts as a hole injection layer (anode buffer layer) on the first electrode (anode) in the film formation chamber 807, Polyaniline / camphor sulfonic acid aqueous solution (PANI / CSA), PTPDES, Et-PTPDK, PPBA, or the like may be applied to the entire surface and fired. When firing, it is preferably performed in the pretreatment chamber 809.

When a hole injection layer made of a polymer material is formed by a coating method using spin coating or the like, flatness is improved, and coverage and film thickness uniformity of a film formed thereon are improved. be able to. In particular, since the thickness of the light emitting layer becomes uniform, uniform light emission can be obtained. In this case, it is preferable to perform vacuum heating (100 to 200 ° C.) immediately after forming the hole injection layer by a coating method and immediately before film formation by the vapor deposition method.

For example, after the surface of the first electrode (anode) is washed with a sponge, it is carried into the substrate loading chamber 801, conveyed to the film formation chamber 807, and poly (ethylenedioxythiophene) / poly (styrenesulfone) by spin coating. Acid) Aqueous solution (PEDOT / PSS) is applied to the entire surface with a film thickness of 60 nm, then transported to a pretreatment chamber 809, pre-baked at 80 ° C. for 10 minutes, main-baked at 200 ° C. for 1 hour, and immediately before vapor deposition After vacuum heating (170 ° C., heating for 30 minutes, cooling for 30 minutes), the light-emitting layer may be formed by an evaporation method without being exposed to the atmosphere by being transferred to the film formation chamber 805. In particular, when an ITO film is used as an anode material and there are irregularities and fine particles on the surface, these effects can be reduced by setting the PEDOT / PSS film thickness to 30 nm or more.

In addition, when PEDOT / PSS is formed by spin coating, the film is formed over the entire surface, so that the end face, peripheral edge, terminal part, connection area between the cathode and lower wiring, etc. can be selectively removed. Preferably, it is preferably removed selectively by O ₂ ashing or the like using a mask in the pretreatment chamber 809. The pretreatment chamber 809 has a plasma generating means, and performs dry etching by generating plasma by exciting one or more gases selected from Ar, H, F, and O. By using the mask, only unnecessary portions can be selectively removed. Further, a UV irradiation mechanism may be provided in the pretreatment chamber 809 so that ultraviolet irradiation can be performed as the anode surface treatment.

Next, the substrate is transferred to the film formation chamber 805 connected to the transfer chamber 803 by the transfer mechanism 812, and the small molecule that becomes the hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer, or the electron injection layer is used. An organic compound layer is formed as appropriate. By appropriately selecting an EL material, a light emitting element that emits light of a single color (specifically, white, red, green, or blue) can be formed as the entire light emitting element.

Film formation is performed by moving a robot provided with an evaporation source 712, and a container filled with an EL material can be set as the evaporation source. As the container, the container described in Embodiments 1 and 2 of the present invention can be used.

The film formation chamber 805 is provided with container setting chambers 808a to 808d as described in Embodiment 3, and includes a plurality of containers filled with EL materials. A container filled with necessary materials is transferred to a film formation chamber, and vapor deposition is sequentially performed. Further, a film can be selectively formed by setting a substrate by a face-down method, performing position alignment of a vapor deposition mask by a CCD or the like, and performing vapor deposition by a resistance heating method. When vapor deposition is completed, the substrate is transferred to the next transfer chamber side.

Next, the substrate is taken out of the film formation chamber 805 by a transfer mechanism installed in the transfer chamber 804 and transferred to the film formation chamber 806 without being exposed to the air to form a cathode (or a protective film). This cathode is an inorganic film formed by an evaporation method using resistance heating (an alloy such as MgAg, MgIn, CaF ₂ , LiF, or CaN, or an element belonging to Group 1 or Group 2 of the periodic table and aluminum is co-evaporated. Film formed by a method, or a laminated film thereof). Moreover, you may form a cathode using a sputtering method.

In the case of manufacturing a top emission type or dual emission type light emitting device, the cathode is preferably transparent or translucent, and the metal film thin film (1 nm to 10 nm) or the metal film thin film (1 nm). 10 nm) and a transparent conductive film is preferably used as the cathode. In this case, a film made of a transparent conductive film (ITO (indium tin oxide oxide alloy), indium oxide zinc oxide alloy (In ₂ O ₃ —ZnO), zinc oxide (ZnO), etc.) is formed in the film formation chamber 806 by sputtering. May be formed.

Through the above process, a light-emitting element having a stacked structure is formed.

Alternatively, a protective film formed of a silicon nitride film or a silicon nitride oxide film may be formed and sealed in the deposition chamber 806 connected to the transfer chamber 804. In this case, the film formation chamber 806 is provided with a target made of silicon, a target made of silicon oxide, or a target made of silicon nitride. Alternatively, the protective film may be formed by moving a rod-shaped target with respect to the fixed substrate. Further, the protective film may be formed by moving the substrate with respect to the fixed rod-shaped target.

For example, the silicon nitride film can be formed on the cathode by using a disk-shaped target made of silicon and setting the film formation chamber atmosphere to a nitrogen atmosphere or an atmosphere containing nitrogen and argon. Further, a thin film mainly composed of carbon (DLC (diamond-like carbon) film, CN film, amorphous carbon film) may be formed as a protective film, or a film formation chamber using a CVD method may be provided separately. . Diamond-like carbon film (also called DLC film) is formed by plasma CVD method (typically RF plasma CVD method, microwave CVD method, electron cyclotron resonance (ECR) CVD method, hot filament CVD method, etc.), combustion flame method It can be formed by sputtering, ion beam vapor deposition, laser vapor deposition or the like. The reaction gas used for film formation was hydrogen gas and a hydrocarbon-based gas (for example, CH ₄ , C ₂ H ₂ , C ₆ H _6, etc.), ionized by glow discharge, and negative self-bias was applied. Films are formed by accelerated collision of ions with the cathode. The CN film may be formed using C ₂ H ₄ gas and N ₂ gas as the reaction gas. Note that the DLC film and the CN film are insulating films that are transparent or translucent to visible light. Transparent to visible light means that the visible light transmittance is 80 to 100%, and translucent to visible light means that the visible light transmittance is 50 to 80%.

Next, the substrate over which the light-emitting element is formed is transferred from the transfer chamber 804 to the sealing chamber 802.

The sealing substrate is prepared by being set in the sealing substrate load chamber 810 from the outside. Note that vacuum annealing is preferably performed in advance in order to remove impurities such as moisture. In the case of forming a sealing material to be attached to a substrate provided with a light emitting element on the sealing substrate, the sealing material is formed in the sealing chamber 811 and the sealing substrate on which the sealing material is formed is used as the sealing substrate stock. It is transferred to the chamber 813. Note that a desiccant may be provided on the sealing substrate in the sealing chamber 811. Further, a vapor deposition mask used for vapor deposition may be stocked in the sealing substrate stock chamber 813. Note that here, an example in which the sealing material is formed over the sealing substrate is described; however, there is no particular limitation, and the sealing material may be formed over the substrate over which the light-emitting element is formed.

Next, the sealing substrate is bonded to the sealing substrate in the sealing / removing chamber 802, and the pair of bonded substrates is irradiated with UV light by an ultraviolet irradiation mechanism provided in the sealing / removing chamber 802 to cure the sealing material. . In addition, although ultraviolet curable resin was used here as a sealing material, if it is an adhesive material, it will not specifically limit.

Next, the pair of bonded substrates is sealed and taken out from the take-out chamber 802.

As described above, by using the manufacturing apparatus illustrated in FIG. 8, it is not necessary to expose the light-emitting element to the atmosphere until the light-emitting element is completely enclosed in the sealed space, so that a highly reliable light-emitting device can be manufactured. Further, since the evaporation source is moved and the substrate is moved in the film formation chamber 805, the evaporation is completed. Thus, the evaporation is completed in a short time, and the light-emitting device can be manufactured with high throughput.

Although not shown here, a control device for controlling work in each processing chamber, a control device for transferring between the processing chambers, and a path for moving the substrate to each processing chamber are controlled. A control device that realizes automation is provided.

Moreover, in the manufacturing apparatus shown in FIG. 8, after carrying in the board | substrate with which the transparent conductive film (or metal film (TiN) was provided as an anode and forming the layer containing an organic compound, a transparent or translucent cathode (for example, A top emission (or double emission) light emitting element can be formed by forming a thin metal film (a laminate of Al, Ag) and a transparent conductive film). Indicates an element that transmits light emitted from the organic compound layer through the cathode.

Moreover, in the manufacturing apparatus shown in FIG. 8, after carrying in the board | substrate with which the transparent conductive film was provided as an anode and forming the layer containing an organic compound, by forming the cathode which consists of a metal film (Al, Ag), It is also possible to form a bottom emission type light emitting element. Note that a bottom emission light-emitting element refers to an element that extracts light generated in an organic compound layer from an anode, which is a transparent electrode, toward a TFT and further passes through a substrate.

As described above, the manufacturing apparatus according to the present embodiment can cope with the manufacture of all organic EL elements, and further, it is possible to perform vapor deposition for a long time, so that productivity is greatly improved. be able to.

  In this embodiment, an example in which a light-emitting device (top emission structure) including a light-emitting element that emits white light according to the present invention is manufactured over a substrate having an insulating surface is shown in FIGS. Note that the top emission structure is a structure in which light is extracted from a side opposite to a substrate having an insulating surface.

  FIG. 9 is a top view showing the light-emitting device, and FIG. 10 is a cross-sectional view taken along line A-A ′ of FIG. 9. In FIG. 9, 901 indicated by a dotted line is a source signal line driver circuit, 902 is a pixel portion, and 903 is a gate side driver circuit. Reference numeral 904 denotes a transparent sealing substrate, reference numeral 905 denotes a first sealing material, and the inside surrounded by the first sealing material 905 is filled with a transparent second sealing material 907. Note that the first sealing material 905 contains a gap material for maintaining the distance between the substrates.

  Note that reference numeral 908 denotes a connection wiring for transmitting signals input to the source side driver circuit 901 and the gate side driver circuit 903, and a video signal and a clock signal are received from an FPC (flexible printed circuit) 909 serving as an external input terminal. receive. Although only the FPC is shown here, a printed wiring board (PWB) may be attached to the FPC.

  Next, a cross-sectional structure will be described with reference to FIG. A driver circuit and a pixel portion are formed over the substrate 910. Here, a source side driver circuit 901 and a pixel portion 902 are shown as driver circuits.

  Note that the source side driver circuit 901 is a CMOS circuit in which an n-channel TFT 923 and a p-channel TFT 924 are combined. The TFT forming the driving circuit may be formed by a known CMOS circuit, PMOS circuit or NMOS circuit. Further, in this embodiment, a driver integrated type in which a drive circuit is formed on a substrate is shown, but this is not always necessary, and it can be formed outside the substrate. Further, the structure of a TFT having a polysilicon film as an active layer is not particularly limited, and may be a top gate type TFT or a bottom gate type TFT.

  The pixel portion 902 is formed by a plurality of pixels including a switching TFT 911, a current control TFT 912, and a first electrode (anode) 913 electrically connected to the drain thereof. The current control TFT 912 may be an n-channel TFT or a p-channel TFT, but is preferably a p-channel TFT when connected to the anode. In addition, it is preferable to appropriately provide a storage capacitor (not shown). Note that here, only a cross-sectional structure of one pixel among the infinitely arranged pixels is shown, and an example in which two TFTs are used for the one pixel is shown. However, three or more TFTs are appropriately used. , May be used.

Here, since the first electrode (anode) 913 is in direct contact with the drain of the TFT, the lower layer of the first electrode (anode) 913 is a material layer that can be in ohmic contact with the drain made of silicon, The uppermost layer in contact with the layer containing an organic compound is preferably a material layer having a high work function. As the first electrode (anode), it is desirable to use one having a work function of 4.0 eV or more. For example, when a three-layer structure of a titanium nitride film, a film containing aluminum as a main component, and a titanium nitride film is used, the resistance as a wiring is low, a good ohmic contact can be obtained, and the film can function as an anode. . The first electrode (anode) 913 includes ITO (indium tin oxide), ITSO in which indium oxide is mixed with ₂ to 20% silicon oxide (SiO ₂ ), gold (Au), platinum (Pt), nickel ( Ni), tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu), palladium (Pd), zinc (Zn), Pt film, molybdenum (Mo) Alternatively, a single layer of a nitride of a metal material (such as titanium nitride) may be used, or a stack of three or more layers may be used.

  In addition, insulators (called banks, partition walls, barriers, banks, or the like) 914 are formed on both ends of the first electrode (anode) 913. The insulator 914 may be formed using an organic resin film or an insulating film containing silicon. Here, an insulator having a shape shown in FIG. 10 is formed using a positive photosensitive acrylic resin film as the insulator 914.

  In order to improve the film forming property, a curved surface having a curvature is formed at the upper end portion or the lower end portion of the insulator 914. For example, in the case where positive photosensitive acrylic is used as a material for the insulator 914, it is preferable that only the upper end portion of the insulator 914 has a curved surface with a radius of curvature (0.2 μm to 3 μm). As the insulator 914, either a negative type that becomes insoluble in an etchant by photosensitive light or a positive type that becomes soluble in an etchant by light can be used.

  Alternatively, the insulator 914 may be covered with a protective film made of an aluminum nitride film, an aluminum nitride oxide film, a thin film containing carbon as its main component, or a silicon nitride film.

Next, an electroluminescent layer 915 is formed. As a material for forming the electroluminescent layer 915, there are a low molecular weight, a high molecular weight, and a medium molecular weight material having properties between the low molecular weight and the high molecular weight. In this embodiment, a low molecular material is used to form the electroluminescent layer 915 by vapor deposition. Both low molecular weight materials and high molecular weight materials can be applied by spin coating or an ink jet method by dissolving them in a solvent. Further, not only organic materials but also composite materials with inorganic materials can be used.

An electroluminescent layer 915 is selectively formed on the first electrode (anode) 913 by a vapor deposition method using the vapor deposition container of the present invention. For example, vapor deposition is performed in the film formation chamber described in the first embodiment in which the degree of vacuum is 5 × 10 ⁻³ Torr (0.665 Pa) or less, preferably 10 ⁻⁴ to 10 ⁻⁶ Torr. At the time of vapor deposition, the organic compound is vaporized in advance by resistance heating, and is scattered in the direction of the substrate by opening the shutter at the time of vapor deposition. The vaporized organic compound is scattered upward and deposited on the substrate through the opening provided in the metal mask, and the electroluminescent layer 615 (the hole injection layer, the hole transport layer, the light emission from the first electrode side). Layer, electron transport layer, electron injection layer). Note that the structure of the electroluminescent layer 915 is not limited to such a stack, and may be a single layer or a mixed layer. Further, a second electrode (cathode) 916 is formed on the electroluminescent layer 915.

When the vapor deposition container and vapor deposition apparatus of the present invention are used, even in a vapor deposition apparatus in which the evaporation source can be detached from the heating part, the temperature difference between the opening of the container and the heater can be reduced during vapor deposition. The deposition material can be prevented from adhering. Therefore, it is possible to reduce the frequency of replacement and maintenance of the evaporation source due to clogging, and the throughput is improved. In addition, it is possible to suppress a change in the deposition rate due to clogging of the opening, and it is possible to provide a high-quality light-emitting device with little variation in quality.

Note that as the second electrode (cathode), it is preferable to use a metal, an alloy, an electrically conductive compound, a mixture thereof, or the like having a small work function (a work function of 3.8 eV or less is a guide). Specific materials include elements belonging to Group 1 or Group 2 of the periodic table, that is, alkali metals such as Li and Cs, alkaline earth metals such as Mg, Ca, and Sr, and alloys containing these (Mg: In addition to Ag, Al: Li) and compounds (LiF, CsF, CaF ₂ ), transition metals including rare earth metals can be used. However, since the second electrode (cathode) has translucency in this embodiment, these metals or alloys containing these metals are formed very thin, and ITO, IZO, ITSO or other metals (alloys) Can be formed by lamination.

  Here, a stack of a thin metal film with a small work function and a transparent conductive film (ITO, IZO, ZnO, or the like) is used as the second electrode (cathode) 916 so as to transmit light. In this manner, an electroluminescent element 918 including the first electrode (anode) 913, the electroluminescent layer 915, and the second electrode (cathode) 916 is formed.

In this embodiment, as the electroluminescent layer 915, CuPc (20 nm) which is a hole injection layer, α-NPD (30 nm) which is a first light-emitting layer having a hole transport property, and CBP + Pt (ppy) which is a second light-emitting layer. ) Acac: formed by sequentially laminating 15 wt% (20 nm) and BCP (30 nm) as an electron transport layer. Since a metal thin film having a small work function is used as the second electrode (cathode), it is not necessary to use an electron injection layer (CaF ₂ ) here.

  The electroluminescent element 918 thus formed emits white light. Note that a color filter including a colored layer 931 and a light-shielding layer (BM) 932 (for the sake of simplicity, an overcoat layer is not shown here) is provided in order to realize full color.

  In addition, a transparent protective laminate 917 is formed to seal the electroluminescent element 918. The transparent protective laminate 917 is formed by a laminate of a first inorganic insulating film, a stress relaxation film, and a second inorganic insulating film. As the first inorganic insulating film and the second inorganic insulating film, a silicon nitride film, a silicon oxide film, a silicon oxynitride film (SiNO film (composition ratio N> O) or SiON film (by a sputtering method or a CVD method) ( A composition ratio N <O)) and a thin film mainly containing carbon (for example, a DLC film or a CN film) can be used. These non-insulating films have a high blocking effect against moisture. However, as the film thickness increases, the film stress increases and peeling or film peeling tends to occur.

  However, by sandwiching the stress relaxation film between the first inorganic insulating film and the second inorganic insulating film, stress can be relaxed and moisture can be absorbed. Even if a minute hole (pinhole or the like) is formed in the first inorganic insulating film for some reason during film formation, it is filled with a stress relaxation film and a second inorganic insulating film is provided thereon. Therefore, it has a very high blocking effect against moisture and oxygen.

Further, as the stress relaxation film, a material having a lower stress than the inorganic insulating film and having a hygroscopic property is preferable. In addition, it is desirable that the material has translucency. Further, as the stress relaxation film, a material film containing an organic compound such as α-NPD, BCP, MTDATA, or Alq ₃ may be used, and these material films have a hygroscopic property and are thin. It is almost transparent. MgO, SrO ₂ , and SrO have hygroscopicity and translucency, and can be used as a stress relaxation film because a thin film can be obtained by an evaporation method.

In this embodiment, a film formed in an atmosphere containing nitrogen and argon using a silicon target, that is, a silicon nitride film having a high blocking effect against impurities such as moisture and alkali metal is used as the first inorganic insulating film or the first film. 2 as an inorganic insulating film, and an Alq ₃ thin film is used as a stress relaxation film by vapor deposition. Moreover, in order to allow light emission to pass through the transparent protective laminate, it is preferable to make the total thickness of the transparent protective laminate as thin as possible.

  Further, in order to seal the electroluminescent element 918, the sealing substrate 904 is bonded to the first sealing material 905 and the second sealing material 907 in an inert gas atmosphere. Note that an epoxy-based resin is preferably used as the first sealing material 905 and the second sealing material 907. In addition, the first sealing material 905 and the second sealing material 907 are desirably materials that do not transmit moisture and oxygen as much as possible.

  In this embodiment, a glass substrate and a quartz substrate, as well as a plastic substrate made of FRP (Fiberglass-Reinforced Plastics), PVF (polyvinyl fluoride), polyester, acrylic, or the like is used as a material constituting the sealing substrate 904. it can. Further, after the sealing substrate 904 is bonded using the first sealing material 905 and the second sealing material 907, it is also possible to seal with a third sealing material so as to cover the side surface (exposed surface).

  By encapsulating the electroluminescent element 918 in the first sealing material 605 and the second sealing material 907 as described above, the electroluminescent element 918 can be completely shut off from the outside, and electroluminescence such as moisture and oxygen from the outside. Invasion of a substance that promotes deterioration of the layer 915 can be prevented. Therefore, a highly reliable light-emitting device can be obtained.

  In addition, when a transparent conductive film is used as the first electrode (anode) 913, a double-sided light-emitting device can be manufactured.

As an electronic device to which the present invention is applied, a video camera, a digital still camera, a goggle type display, a navigation system, a sound reproduction device (car audio, etc.), a personal computer, a game device, a portable information terminal (mobile computer, cellular phone, portable) Type game machine, electronic book, etc.), image reproducing apparatus provided with a recording medium (specifically, an apparatus provided with a display capable of reproducing a recording medium such as a DVD (Digital Versatile Disc) and displaying the video) ) Etc. Specific examples of these electronic devices are shown in FIGS.

FIG. 11A illustrates a display device, which includes a housing 1801, a display portion 1802, a speaker 1803, and the like. The present invention is applied to creation of the display unit 1802. By using the present invention, it is possible to obtain a high-quality display without display unevenness even in a large-screen display device. Note that this display device specifically includes all information display devices such as a computer, a television receiver, and an advertisement display.

FIG. 11B illustrates a digital camera, which includes a main body 1811, a display portion 1812, an image receiving portion 1813, operation keys 1814, an external connection port 1815, a shutter 1816, and the like. The present invention can be applied to the manufacturing process of the display portion 1812. By applying the present invention to the manufacturing process, an image can be displayed more accurately.

FIG. 11C illustrates a computer, which includes a main body 1821, a housing 1822, a display portion 1823, a keyboard 1824, an external connection port 1825, a pointing mouse 1826, and the like. The present invention can be applied when the display portion 1823 is created. By applying the present invention, it becomes possible to display an image more accurately.

FIG. 11D illustrates a mobile computer, which includes a main body 1831, a display portion 1832, a switch 1833, operation keys 1834, an infrared port 1835, and the like. The present invention can be applied when the display portion 1832 is manufactured. By applying the present invention, it becomes possible to display an image more accurately.

FIG. 11E illustrates a portable game device, which includes a housing 1841, a display portion 1842, speaker portions 1843, operation keys 1844, a recording medium insertion portion 1845, and the like. The present invention can be applied when the display portion 1842 is manufactured. By applying the present invention, it becomes possible to display an image more accurately.

As described above, the applicable range of the present invention is so wide that it can be used for electronic devices in various fields. Moreover, since a vapor deposition material can be satisfactorily vapor-deposited even on a large substrate having a side longer than 1 meter, the yield of products can be improved, and finally the production cost of the products can be reduced. At the same time, since the display quality of the product is improved, it is possible to enhance the competitiveness of the product as an electronic device that performs high-quality display.

The figure which shows the example of the structure of the container of this invention. The figure which shows the example of the structure of the container of this invention. The figure which shows the vapor deposition apparatus using the container of this invention. The figure which shows the container of this invention, and its heating method. The figure which shows the example of the structure of the container of this invention. The figure which shows the example of the structure of the container of this invention. The figure which shows the vapor deposition apparatus using the container of this invention. The figure which shows the vapor deposition apparatus using the container of this invention. The figure which shows the example of the light-emitting device using the container and vapor deposition apparatus of this invention. The figure which shows the example of the light-emitting device using the container and vapor deposition apparatus of this invention. FIG. 11 illustrates an example of an electronic device to which the present invention is applied.

Claims (14)

A bottomed cylindrical body filled with a vapor deposition material;
A lid having an opening,
The deposition container characterized in that an outer peripheral end portion of the lid projects outward from the body portion. A body having a cavity filled with a deposition material;
A lid having an opening,
An evaporation container characterized in that the upper side surface of the lid has a bellows structure. In claim 2,
The convex container of the said bellows part of the said lid has projected from the side surface of the container, The container for vapor deposition characterized by the above-mentioned. In any one of Claims 1 thru | or 3,
The container for vapor deposition characterized in that the lid is detachable. In any one of Claims 1 thru | or 4,
The deposition container, wherein the lid is coated with a substance having a higher thermal conductivity than the constituent material of the lid. The lid is coated with gold, silver, platinum, copper, aluminum, nickel, beryllium, silicon carbide, carbon nitride, silicon nitride, boron nitride, silicon carbide, beryllium oxide, or aluminum nitride. container. In any one of Claims 1 thru | or 5,
Materials for the deposition container are tantalum, molybdenum, tungsten, titanium, boron nitride, gold, silver, platinum, copper, aluminum, nickel, beryllium, silicon carbide, silicon nitride, boron nitride, silicon oxide, beryllium oxide, aluminum nitride Vapor deposition vessel characterized by being formed by A container for vapor deposition composed of a lid having a cylindrical body with a bottom filled with a deposition material, an outer peripheral end projecting outward from the trunk, and an opening;
A vapor deposition source having a heating unit for heating the vapor deposition container,
The outer peripheral end of the lid is in contact with the heating unit. In claim 8,
The diameter of the outer peripheral edge of the lid is larger than the diameter of the opening of the vapor deposition source,
The vapor deposition apparatus, wherein a lower surface of an outer peripheral end portion of the lid is in contact with an upper surface of the heating unit. A container for vapor deposition composed of a cylindrical body with a bottom filled with a vapor deposition material, and a lid having an opening;
A vapor deposition source having a heating unit for heating the vapor deposition container,
The upper part of the side surface of the lid has a bellows structure. In claim 10,
The convex portion of the bellows portion of the lid projects from the side surface of the container. In any one of Claims 8 thru | or 11,
The said vapor deposition apparatus characterized by the above-mentioned. In any one of Claims 8 to 12,
The said lid | cover is coated with the substance whose heat conductivity is higher than the constituent material of the said lid | cover, The vapor deposition apparatus characterized by the above-mentioned. In claim 13,
The material having high thermal conductivity is one or more of gold, silver, platinum, copper, aluminum, nickel, beryllium, silicon carbide, carbon nitride, silicon nitride, boron nitride, silicon oxide, beryllium oxide, and aluminum nitride. The vapor deposition apparatus characterized by using.

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