JP2592311B2 - Method and apparatus for manufacturing magneto-optical recording medium - Google Patents

Method and apparatus for manufacturing magneto-optical recording medium

Info

Publication number
JP2592311B2
JP2592311B2 JP63261579A JP26157988A JP2592311B2 JP 2592311 B2 JP2592311 B2 JP 2592311B2 JP 63261579 A JP63261579 A JP 63261579A JP 26157988 A JP26157988 A JP 26157988A JP 2592311 B2 JP2592311 B2 JP 2592311B2
Authority
JP
Japan
Prior art keywords
substrate
target
magneto
recording medium
optical recording
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP63261579A
Other languages
Japanese (ja)
Other versions
JPH02210636A (en
Inventor
直毅 楠木
英明 竹内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP63261579A priority Critical patent/JP2592311B2/en
Priority to DE19893934887 priority patent/DE3934887A1/en
Publication of JPH02210636A publication Critical patent/JPH02210636A/en
Application granted granted Critical
Publication of JP2592311B2 publication Critical patent/JP2592311B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/18Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50Substrate holders
    • C23C14/505Substrate holders for rotation of the substrates
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03GELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/16Layers for recording by changing the magnetic properties, e.g. for Curie-point-writing
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851Coating a support with a magnetic layer by sputtering

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Physical Vapour Deposition (AREA)
  • Thin Magnetic Films (AREA)

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は、光磁気記録媒体の製造方法に関し、特にス
パッタリング法により連続的に多層構造の薄膜を基板の
自公転運動によって形成する光磁気記録媒体の製造方法
及び製造装置に関する。
Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a magneto-optical recording medium, and more particularly to magneto-optical recording in which a thin film having a multilayer structure is continuously formed by a sputtering method by the orbital motion of a substrate. The present invention relates to a method and apparatus for manufacturing a medium.

[従来技術] 近年、光磁気記録媒体は、レーザ光による書き込み・
読みだし可能な光磁気ディスクとして大容量データ・フ
ァイル等に広く利用されている。
[Prior Art] In recent years, magneto-optical recording media have been
It is widely used as a readable magneto-optical disk for large-capacity data files and the like.

この光磁気ディスクは、ガラス,プラスティック等の
透明基板上に誘電体層,記録層,保護層等の層構造を有
する。光磁気効果を示す前記記録層には希土類金属(以
下REと称する)からなる層と遷移金属(以下TMと称す
る)とからなる層を夫々数Å〜10数Åの厚さで交互に少
なくとも2層以上積層した層構造とする事により、磁化
量,保磁力,光磁気効果(カー効果)の優れた特性を得
る事が出来、また製造上の制御性においても良好であ
る。
This magneto-optical disk has a layer structure such as a dielectric layer, a recording layer, and a protective layer on a transparent substrate such as glass or plastic. In the recording layer exhibiting the magneto-optical effect, a layer composed of a rare earth metal (hereinafter, referred to as RE) and a layer composed of a transition metal (hereinafter, referred to as TM) are alternately formed in a thickness of several to several tens by at least two layers. By adopting a layer structure in which a plurality of layers are laminated, excellent characteristics such as magnetization amount, coercive force and magneto-optical effect (Kerr effect) can be obtained, and good controllability in manufacturing can be obtained.

その製造方法としては、スパッタ室内に前記REターゲ
ット及びTMターゲットを配設し、前記両ターゲットの上
方に対向配置した基板もしくは基板ホルダを自公転させ
ながらスパッタリングする方法(例えば、特開昭61−77
155号及び同62−71041号等)が開示されており、この方
法によって、積層膜構造を均一な分布で生産することが
出来る。特に、該製造方法は自公転方式であることによ
り、スパッタ粒子のスパッタ角度分布による薄膜の膜厚
分布を修正するためスパッタ源と基板との間に配置され
るシャッタ部材を省略することが出来る。このため、前
記薄膜を形成するため前記基板上に付着するスパッタ粒
子の付着効率が高められる。更に、前記シャッタ部材に
付着するスパッタ粒子に起因したダストの発生が無いの
で、該ダストが基板上に付着して生じる前記薄膜のピン
ホールの発生を減らし、良好な薄膜を生産することがで
きる。
As a manufacturing method, a method in which the RE target and the TM target are disposed in a sputtering chamber, and sputtering is performed while rotating a substrate or a substrate holder opposed to and disposed above the two targets (for example, JP-A-61-7761)
Nos. 155 and 62-71041), and by this method, a laminated film structure can be produced with a uniform distribution. In particular, since the manufacturing method is a self-revolving method, a shutter member disposed between the sputter source and the substrate to correct the film thickness distribution due to the sputter angle distribution of sputter particles can be omitted. For this reason, the adhesion efficiency of sputtered particles adhering to the substrate for forming the thin film is enhanced. Further, since there is no generation of dust due to sputter particles adhering to the shutter member, it is possible to reduce the generation of pinholes in the thin film caused by the dust adhering to the substrate, and to produce a good thin film.

[発明が解決しようとする課題] しかしながら、上記製造方法では、基板上に適宜積層
して形成された薄膜の総合膜厚分布は均一に形成されて
いるが、RE層及びTM層の1層当たりの膜厚分布は前記総
合膜厚分布に較べて均一でないと云った問題が生じた。
このため、作製された光磁気記録媒体のC/N比が充分に
大きくなく、また、エンベロープも良好でないと云った
問題があった。
[Problems to be Solved by the Invention] However, in the above-described manufacturing method, the total thickness distribution of the thin films formed by appropriately laminating on the substrate is formed uniformly. Has a problem that the film thickness distribution is not uniform as compared with the overall film thickness distribution.
For this reason, there is a problem that the C / N ratio of the manufactured magneto-optical recording medium is not sufficiently large, and that the envelope is not good.

そこで、本発明者らが種々実験を行ったところ、各層
の膜厚分布の均一性は、基板或いは基板ホルダの自公転
数の比に大きく起因していることが確認された。
Thus, the present inventors have conducted various experiments, and it has been confirmed that the uniformity of the film thickness distribution of each layer largely depends on the ratio of the number of revolutions of the substrate or the substrate holder.

即ち、本発明の目的は上記問題点を解消することにあ
り、前記RE層及びTM層の各層毎の膜厚分布を常時均一に
し、その結果として、C/N比及びエンベロープが良好な
膜質の光磁気記録媒体の製造方法及び製造装置を提供す
ることにある。
That is, an object of the present invention is to solve the above-mentioned problems, and to make the thickness distribution of each of the RE layer and the TM layer uniform at all times, and as a result, the C / N ratio and the envelope have a good film quality. An object of the present invention is to provide a method and an apparatus for manufacturing a magneto-optical recording medium.

[課題を解決するための手段] 本発明の上記目的は、基板上に少なくとも希土類金属
層と遷移金属層を積層するため、スパッタ室内に希土類
金属ターゲットと遷移金属ターゲットとを並設し、前記
両ターゲットに対向すると共に公転軸が前記両ターゲッ
ト面の各々の幾何学的中心を通る各垂線から等距離に位
置するようにした前記基板を自公転させながら前記両タ
ーゲットによるスパッタリングを行う光磁気記録媒体の
製造方法において、前記基板の自転数(W2)と公転数
(W1)との比(W2/W1)を4以上とすることを特徴とす
る光磁気記録媒体の製造方法により達成される。
[Means for Solving the Problems] The object of the present invention is to provide a method for stacking at least a rare earth metal layer and a transition metal layer on a substrate. A magneto-optical recording medium that performs sputtering by the two targets while revolving the substrate so that the substrate faces the target and the revolving axis is positioned equidistant from each perpendicular passing through the geometric center of the two target surfaces. Wherein the ratio (W2 / W1) of the number of revolutions (W2) to the number of revolutions (W1) of the substrate is 4 or more, which is achieved by a method of manufacturing a magneto-optical recording medium.

又、本発明の目的は、基板上に少なくとも希土類金属
層と遷移金属層を積層するため、スパッタ室内に並設さ
れた希土類金属ターゲット及び遷移金属ターゲットと、
前記両ターゲットに対向するように前記基板を保持する
自転ホルダと、公転軸が前記両ターゲット面の各々の幾
何学的中心を通る各垂線から等距離に位置するように前
記自転ホルダを公転させる公転ホルダとを備え、 前記公転ホルダの回転数に対する前記自転ホルダの回
転数の比が4以上となるようにして前記両ターゲットに
よるスパッタリングを行うことを特徴とする光磁気記録
媒体の製造装置により達成される。
Further, an object of the present invention is to stack at least a rare earth metal layer and a transition metal layer on a substrate, a rare earth metal target and a transition metal target juxtaposed in a sputtering chamber,
A rotation holder that holds the substrate so as to face the two targets, and a revolution that revolves the rotation holder such that a revolving axis is equidistant from each perpendicular passing through the geometric center of each of the target surfaces. A magneto-optical recording medium manufacturing apparatus, characterized in that sputtering is performed with the two targets so that the ratio of the number of rotations of the rotation holder to the number of rotations of the revolution holder is 4 or more. You.

尚、本発明において公転軸が前記両ターゲットの面の
各々の幾何学的中心を通る各垂線から等距離に位置する
とは、両ターゲット面の各々の幾何学的中心(例えば、
円板ターゲットにおいて円中心)を通る各垂線が、公転
軸を円中心とする円の円周上に位置することを意味す
る。
Note that, in the present invention, the revolving axis is positioned equidistant from each perpendicular passing through the respective geometric centers of the surfaces of both targets, which means that the respective geometric centers of the two target surfaces (for example,
This means that each perpendicular line passing through the center of the circle in the disk target) is located on the circumference of the circle whose center is the orbital axis.

[実施態様] 以下、本発明の方法を適用した装置にもとづいて本発
明を詳細に説明する。
Embodiment Hereinafter, the present invention will be described in detail based on an apparatus to which the method of the present invention is applied.

第1図は本発明の光磁気記録媒体の製造方法に適用し
たスパッタリング装置の要部概略図である。
FIG. 1 is a schematic view of a main part of a sputtering apparatus applied to a method of manufacturing a magneto-optical recording medium according to the present invention.

第1図に示すように、スパッタ室15内には、底部に配
置したカソード電極16a,16b上に、ターゲット1aと1bが
設けられている。また、前記ターゲット1a,1bは、その
裏面側に対応して前記スパッタ室15の外部に設けた永久
磁石17a,17bにより、ターゲット表面に磁界が形成され
ている。
As shown in FIG. 1, in the sputtering chamber 15, targets 1a and 1b are provided on cathode electrodes 16a and 16b arranged at the bottom. Further, a magnetic field is formed on the surface of each of the targets 1a and 1b by permanent magnets 17a and 17b provided outside the sputtering chamber 15 corresponding to the back surface side.

なお、前記電極16a,16bは、それぞれターゲット電源1
8が繋げられており、該ターゲット1a,1bに個々に適した
スパッタパワーを与え、所望の積層薄膜が形成出来るよ
うになされている。
The electrodes 16a and 16b are connected to the target power source 1 respectively.
Numerals 8 are connected so that appropriate sputtering power is applied to the targets 1a and 1b so that a desired laminated thin film can be formed.

前記両ターゲット1a,1bの上方には、プラスチック基
板2がアノード電極を兼ねた自転ホルダ3に保持されて
前記両ターゲット1aと1bの両方に対してほぼ均等な距離
になるような位置に配置されている。前記自転ホルダ3
は、その中心に回転軸7を有しており、該回転軸7は公
転駆動モータ6により回転する公転ホルダ4を貫通して
上方に延びている。前記回転軸7の上方端寄には遊星ギ
ア5aが固着されている。そして、該遊星ギア5aは前記公
転駆動モータ6の回転軸8の周りに固定された固定ギア
5bと噛み合うことにより、前記固定ギア5bの周囲を公転
しながら自転する。
Above the targets 1a and 1b, a plastic substrate 2 is held by a rotation holder 3 also serving as an anode electrode, and is disposed at a position where the distance between the targets 1a and 1b is substantially equal. ing. The rotation holder 3
Has a rotating shaft 7 at the center thereof, and the rotating shaft 7 extends upward through the revolution holder 4 rotated by the revolution driving motor 6. Near the upper end of the rotating shaft 7, a planetary gear 5a is fixed. The planetary gear 5a is a fixed gear fixed around the rotation shaft 8 of the revolution drive motor 6.
By meshing with the fixed gear 5b, the fixed gear 5b rotates while revolving around the fixed gear 5b.

この際、本実施態様では、前記公転ホルダ4の回転数
に対する前記自転ホルダ3の回転数の比が約4と成るよ
うに設定した。即ち、前記自転ホルダ3の自転数(W2)
と公転数(W1)との比である自公転比(W2/W1)も、約
4となる。
At this time, in the present embodiment, the ratio of the rotation number of the rotation holder 3 to the rotation number of the revolution holder 4 is set to be about 4. That is, the rotation number (W2) of the rotation holder 3
The self-revolution ratio (W2 / W1), which is the ratio between the number of revolutions and the number of revolutions (W1), is also about 4.

なお、前記自転ホルダ3は前記公転ホルダ4に対して
複数個(第1図では2個)装着されるように構成されて
いる。
The rotation holder 3 is configured to be mounted on the revolving holder 4 in a plural number (two in FIG. 1).

前記ターゲット1aと1bは、例えば、1aが遷移金属、1b
が希土類金属にて形成されていることにより、前記基板
2上に遷移金属と希土類金属の積層薄膜を形成すること
ができる。
The targets 1a and 1b, for example, 1a is a transition metal, 1b
Is formed of a rare earth metal, a laminated thin film of a transition metal and a rare earth metal can be formed on the substrate 2.

そこで、上記のように構成された前記スパッタリング
装置のスパッタ室15にアルゴン(Ar)ガス等の不活性ガ
スを導入し、且つ前記ターゲット1a,1bに適宜スパッタ
パワーを付加させた状態にしておき、前記自転ホルダ3
に予め誘電体層を形成したプラスチック基板2を装着す
る。
Therefore, an inert gas such as an argon (Ar) gas is introduced into the sputtering chamber 15 of the sputtering apparatus configured as described above, and the sputtering power is appropriately applied to the targets 1a and 1b. The rotation holder 3
Is mounted with a plastic substrate 2 on which a dielectric layer is formed in advance.

そして、前記公転駆動モータ6を駆動して、前記公転
ホルダ4及び自転ホルダ3を回転させながら前記基板2
上に希土類金属と遷移金属の積層薄膜を形成する。
Then, the revolving drive motor 6 is driven to rotate the revolving holder 4 and the rotation holder 3 while the substrate 2
A laminated thin film of a rare earth metal and a transition metal is formed thereon.

本発明によれば、前記自転ホルダ3の自公転比を4ま
たはそれ以上に設けることにより、RE,TM両ターゲット
の各々の有効成膜領域(プラズマ密度の高い領域)で前
記基板2が2.5回転以上回転して成膜が行われるため、R
E層及びTM層の各層毎に膜厚分布を均一にすることがで
きる。
According to the present invention, by providing the rotation / revolution ratio of the rotation holder 3 at 4 or more, the substrate 2 rotates 2.5 times in the effective film formation region (region with high plasma density) of each of the RE and TM targets. Since the film is formed by rotating above, R
The film thickness distribution can be made uniform for each of the E layer and the TM layer.

さらに詳しく説明すると、本発明者らは、前記自公転
方式のスパッタリング装置において、自公転比と膜厚分
布との関係は、第2図に示したグラフの様になること
を、シミュレーション解析及び実現により明らかにする
ことができた。
To explain in more detail, the present inventors have performed simulation analysis and realized that the relationship between the revolution ratio and the film thickness distribution is as shown in the graph of FIG. Could clarify.

即ち、第1の実験として、RE層及びTM層の各層単独の
膜厚分布を測定する為、スパッタ室内中央にTbターゲッ
トを一つ配設し、これらに対向してプラスチック基板を
公転半径190mmで且つターゲット〜基板間距離が150mmと
なるように配置させた。そして、真空排気して圧力を5
×10-7Torrまで脱ガス化した後、Arガスをスパッタ室に
導入しガス圧を1.0×10-3Torrとした。次に前記Tbター
ゲットに1kWの放電パワーを印加してスパッタを維持
し、前記基板の公転速度を15rpmに固定する一方、前記
基板の自転速度を変えて、自公転比が2〜6の範囲につ
いてTbの単層膜を形成し、膜厚分布を測定した。その結
果を第2図に破線で示した。
That is, as a first experiment, in order to measure the film thickness distribution of each of the RE layer and the TM layer alone, one Tb target was disposed at the center of the sputtering chamber, and the plastic substrate was opposed to these at a revolving radius of 190 mm. In addition, they were arranged so that the distance between the target and the substrate was 150 mm. Then, evacuate to a pressure of 5
After degassing to × 10 -7 Torr, Ar gas was introduced into the sputtering chamber to adjust the gas pressure to 1.0 × 10 -3 Torr. Next, while applying a discharge power of 1 kW to the Tb target to maintain sputtering and fixing the revolution speed of the substrate to 15 rpm, while changing the rotation speed of the substrate, the revolution ratio is in the range of 2 to 6. A single-layer film of Tb was formed, and the film thickness distribution was measured. The result is shown by a broken line in FIG.

また、第2の実験として、スパッタ室内に公転軸の中
心から対称の位置に、それぞれの中心までの距離が190m
mとなるようにTbターゲットとFeCoターゲットを配設
し、その他は第1の実験と同じ条件で多層膜を形成し、
その総合膜厚(45層)の膜厚分布の測定結果を第2図に
実線で示した。
As a second experiment, the distance from the center of the orbital axis to the center was 190 m in the sputtering chamber at a symmetrical position.
A Tb target and a FeCo target are arranged so as to be m, and a multilayer film is formed under the same conditions as in the first experiment.
The measurement result of the film thickness distribution of the total film thickness (45 layers) is shown by a solid line in FIG.

第2図から、多層膜の総合膜厚(45層)の膜厚分布に
関しては、自公転比が整数値近傍を除けば全域に渡って
一定であるが、各1層当たりの膜厚分布に関しては、自
公転比が4以下になると急激に悪化することが確認され
た。
From FIG. 2, it can be seen that the film thickness distribution of the total film thickness (45 layers) of the multilayer film is constant over the entire region except for the vicinity of an integer value. It was confirmed that when the revolution ratio became 4 or less, it rapidly deteriorated.

光磁気記録媒体で記録層を自公転方式によりRE金属層
とTM金属層を積層構造でスパッタリングする場合、既述
したように、C/N比,エンベロープ等を良好にするため
には各1層当たりの膜厚分布を均一にすれば良いので、
前記自公転基板ホルダの自公転比を4以上にしてスパッ
タリングすることにより、C/N比,エンベローブ等の特
性の極めて良好な膜質を得ることが出来る。
When the recording layer is sputtered on the magneto-optical recording medium by the revolving method, the RE metal layer and the TM metal layer are sputtered in a laminated structure, as described above, to improve the C / N ratio, the envelope, etc. It is only necessary to make the film thickness distribution uniform,
By sputtering the self-revolving substrate holder with the self-revolving ratio of 4 or more, it is possible to obtain a film having extremely good properties such as C / N ratio and envelope.

なお、自公転比の上限に関しては、特に制限はない
が、際限なく大きくすることは機械的な複雑さを増大
し、装置が大型化し、その割には膜厚分布の均一化効果
は大きくならないので、所望の値に留めておくことが好
ましい。
The upper limit of the revolution ratio is not particularly limited. However, increasing the value without limit increases mechanical complexity, increases the size of the apparatus, and does not increase the effect of uniformizing the film thickness distribution. Therefore, it is preferable to keep the desired value.

[発明の効果] 以上述べたように、本発明の磁気記録媒体の製造方法
及び製造装置によれば、基板上に少なくとも希土類金属
と遷移金属を積層するため、スパッタ室内に希土類金属
ターゲットと遷移金属ターゲットとを並設し、前記両タ
ーゲットに対向すると共に公転軸が前記両ターゲット面
の各々の幾何学的中心を通る各垂線から等距離に位置す
るようにした前記基板を自公転させてスパッタリングす
る際の基板もしくは基板ホルダの自公転比を4以上とす
ることにより、各1層当たりの膜厚分布を均一にするこ
とができ、これにより、C/N,エンペロープ等の特性の極
めて良好な膜質が得られる。
[Effects of the Invention] As described above, according to the method and apparatus for manufacturing a magnetic recording medium of the present invention, since at least a rare earth metal and a transition metal are laminated on a substrate, a rare earth metal target and a transition metal are placed in a sputtering chamber. A target is arranged side by side, and the substrate is rotated and sputtered so that the substrate faces the two targets and the revolving axis is positioned equidistant from each perpendicular passing through the geometric center of each of the two target surfaces. By setting the rotation ratio of the substrate or the substrate holder at the time of rotation to 4 or more, the film thickness distribution per each layer can be made uniform, and thus the film quality with excellent characteristics such as C / N and envelope can be obtained. Is obtained.

[実施例] 以下、実施例により本発明の効果を更に明確にする。[Examples] Hereinafter, the effects of the present invention will be further clarified by Examples.

第1図に示した本発明の装置を用いて光磁気記録媒体
の記録層を成膜した。
A recording layer of a magneto-optical recording medium was formed using the apparatus of the present invention shown in FIG.

スパッタ室15内にREターゲットとしてφ8インチTbタ
ーゲット1a,TMターゲットとしてφ8インチFeCoターゲ
ット1bをそれぞれ中心距離200mmで並設し、これらに対
向してφ5.25インチのプラスチック基板2を装着した二
つの自転ホルダ3を公転軸が前記両ターゲットの各中心
線から等距離に位置するように公転半径190mmで、且つ
ターゲット〜基板間距離が150mmとなるように配置させ
た。以上のような幾何学的条件において、予め光学膜Si
Nを800Å成膜されたプラスチック・ディスク基板2を前
記自転ホルダ3に装着し、真空排気して圧力を5×10-7
Torrまで脱ガス化した後、Arガスを35SCCMをスパッタ室
に導入しガス圧力を2.0mTorrとした。次に、Tbターゲッ
トに900W,FeCoターゲットに2100Wの放電パワーを印加し
てスパッタを維持し、一方、前記自転ホルダ3を公転数
W1が30rpm,自転数W2が128rpm(自公転比:W2/W1=4.27)
となる様に回転させ、3分20秒間成膜を行い、RE層とTM
層の交互積層記録層の総膜厚を1000Åとした。このよう
にして製作されたサンプルを5枚取り出し、その動特性
を測定した結果、回転基板の中心からR=30mmの箇所に
おいてC/N比は平均50dB(0.9μmビット長),エンベロ
ープは0.5dB以下という非常に良好な膜質を得ることが
出来た。
A φ8 inch Tb target 1a as a RE target and a φ8 inch FeCo target 1b as a TM target are arranged side by side at a center distance of 200 mm in the sputtering chamber 15, and two plastic substrates 2 each having a φ5.25 inch are mounted opposite to these. The rotation holder 3 was arranged so that the revolving axis was positioned equidistant from the respective center lines of the two targets, the revolving radius was 190 mm, and the distance between the target and the substrate was 150 mm. Under the above geometric conditions, the optical film Si
The plastic disc substrate 2 on which N was deposited at 800 ° was mounted on the rotation holder 3 and evacuated to a pressure of 5 × 10 −7.
After degassing to Torr, Ar gas was introduced into the sputtering chamber at 35 SCCM to adjust the gas pressure to 2.0 mTorr. Next, the sputtering power was applied by applying a discharge power of 900 W to the Tb target and 2100 W to the FeCo target, while the rotation holder 3 was rotated around the number of revolutions.
W1 is 30 rpm, number of revolutions W2 is 128 rpm (Rotation / revolution ratio: W2 / W1 = 4.27)
Rotate to form a film for 3 minutes and 20 seconds, and the RE layer and TM
The total film thickness of the alternately laminated recording layers was 1000 °. As a result of taking out five samples manufactured in this way and measuring the dynamic characteristics, the C / N ratio was 50 dB on average (0.9 μm bit length) and the envelope was 0.5 dB at a point of R = 30 mm from the center of the rotating substrate. The following excellent film quality was obtained.

[比較例] 次に、比較例として、基板ホルダ3の自転数W2を68rp
m(自公転比:W2/W1=2.27)に変え、その他の条件は、
全て前記実施例と同一条件として成膜を行った。このサ
ンプルを同様に5枚取り出して動特性を測定した結果、
回転基板の中心からR=30mmの箇所においてC/N比は平
均47dB(0.9μmビット長),エンベロープは1.0dB以上
と云った特性となった。
Comparative Example Next, as a comparative example, the rotation number W2 of the substrate holder 3 was set to 68 rp.
m (revolution ratio: W2 / W1 = 2.27).
All the films were formed under the same conditions as in the above example. As a result of taking out five samples in the same manner and measuring dynamic characteristics,
At a point R = 30 mm from the center of the rotating substrate, the C / N ratio was 47 dB (0.9 μm bit length) on average, and the envelope was 1.0 dB or more.

以上の結果から、RE金属とTM金属を二元同時に積層構
造で成膜した場合、自公転比が4以下ではC/N比及びエ
ンベロープ共に低下し、充分な膜質が得られないこと確
認された。
From the above results, it was confirmed that when the RE metal and the TM metal were simultaneously formed into a layered structure in a binary structure, if the revolution ratio was 4 or less, both the C / N ratio and the envelope were reduced, and sufficient film quality was not obtained. .

【図面の簡単な説明】[Brief description of the drawings]

第1図は本発明の光磁気記録媒体の製造方法を適用した
スパッタリング装置の要部概略図、第2図は自公転基板
を有するスパッタリング装置における自公転基板の自公
転比と基板上に形成される薄膜の膜厚分布との関係を示
す図である。 (図中符号) 1a,1b……ターゲット、2……プラスティック基板、 3……自転ホルダ、4……公転ホルダ 5a……遊星ギア、5b……固定ギア 6……公転駆動モータ、7,8……回転軸 15……スパッタ室、16a,16b……電極 17a,17b……永久磁石、18……電源。
FIG. 1 is a schematic view of a main part of a sputtering apparatus to which the method for manufacturing a magneto-optical recording medium according to the present invention is applied, and FIG. 2 is a diagram showing a rotation / revolution ratio of a rotation / revolution substrate in a sputtering apparatus having a rotation / revolution substrate. FIG. 6 is a diagram showing a relationship with a film thickness distribution of a thin film. (Symbols in the drawing) 1a, 1b Target 2, plastic substrate 3, rotating holder 4, revolving holder 5a planetary gear, 5b fixed gear 6, revolving drive motor 7,8 … Rotating shaft 15… Sputter chamber, 16a, 16b… Electrode 17a, 17b… Permanent magnet, 18… Power supply.

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】基板上に少なくとも希土類金属層と遷移金
属層を積層するため、スパッタ室内に希土類金属ターゲ
ットと遷移金属ターゲットとを並設し、前記両ターゲッ
トに対向すると共に公転軸が前記両ターゲット面の各々
の幾何学的中心を通る各垂線から等距離に位置するよう
にした前記基板を自公転させながら前記両ターゲットに
よるスパッタリングを行う光磁気記録媒体の製造方法に
おいて、 前記基板の自転数(W2)と公転数(W1)との比(W2/W
1)を4以上とすることを特徴とする光磁気記録媒体の
製造方法。
A rare earth metal target and a transition metal target are provided side by side in a sputtering chamber for laminating at least a rare earth metal layer and a transition metal layer on a substrate. In a method for manufacturing a magneto-optical recording medium, wherein sputtering is performed by the two targets while rotating the substrate, which is positioned at an equal distance from each perpendicular passing through each geometric center of the surface, the number of rotations of the substrate ( W2) and the number of revolutions (W1) (W2 / W
A method for manufacturing a magneto-optical recording medium, wherein 1) is 4 or more.
【請求項2】基板上に少なくとも希土類金属層と遷移金
属層を積層するため、スパッタ室内に並設された希土類
金属ターゲット及び遷移金属ターゲットと、前記両ター
ゲットに対向するように前記基板を保持する自転ホルダ
と、公転軸が前記両ターゲット面の各々の幾何学的中心
を通る各垂線から等距離に位置するように前記自転ホル
ダを公転させる公転ホルダとを備え、 前記公転ホルダの回転数に対する前記自転ホルダの回転
数の比が4以上となるようにして前記両ターゲットによ
るスパッタリングを行うことを特徴とする光磁気記録媒
体の製造装置。
2. A method for laminating at least a rare earth metal layer and a transition metal layer on a substrate, wherein the rare earth metal target and the transition metal target are juxtaposed in a sputtering chamber, and the substrate is held so as to face the targets. A rotation holder, and a rotation holder for revolving the rotation holder so that a revolving axis is positioned at an equal distance from each perpendicular passing through the geometric center of each of the target surfaces; and An apparatus for manufacturing a magneto-optical recording medium, wherein sputtering is performed by using both targets so that the rotation speed ratio of the rotation holder is 4 or more.
JP63261579A 1988-10-19 1988-10-19 Method and apparatus for manufacturing magneto-optical recording medium Expired - Lifetime JP2592311B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP63261579A JP2592311B2 (en) 1988-10-19 1988-10-19 Method and apparatus for manufacturing magneto-optical recording medium
DE19893934887 DE3934887A1 (en) 1988-10-19 1989-10-19 Deposition of thin magnetic films with constant thickness - uses sputtering method in which substrates perform specified planetary motions

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63261579A JP2592311B2 (en) 1988-10-19 1988-10-19 Method and apparatus for manufacturing magneto-optical recording medium

Publications (2)

Publication Number Publication Date
JPH02210636A JPH02210636A (en) 1990-08-22
JP2592311B2 true JP2592311B2 (en) 1997-03-19

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DE (1) DE3934887A1 (en)

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CA2059094C (en) * 1991-01-10 1997-06-03 Optical Coating Laboratory, Inc. High ratio planetary drive system for vacuum chamber
DE19501804A1 (en) * 1995-01-21 1996-07-25 Leybold Ag Device for coating substrates
DE19730993B4 (en) * 1997-07-18 2008-04-03 Ald Vacuum Technologies Ag Vacuum coating device for coating substrates on all sides by rotation of the substrates in the particle stream
GB2390378B (en) * 2002-07-06 2005-08-03 Trikon Holdings Ltd Deposition methods and apparatus
GB0215699D0 (en) 2002-07-06 2002-08-14 Trikon Holdings Ltd Deposition methods and apparatus
DE10337732B4 (en) * 2003-08-11 2009-11-19 Carl Zeiss Smt Ag Method and coating system for coating substrates for optical components
US7879209B2 (en) 2004-08-20 2011-02-01 Jds Uniphase Corporation Cathode for sputter coating
US8500973B2 (en) 2004-08-20 2013-08-06 Jds Uniphase Corporation Anode for sputter coating
US7682495B2 (en) 2005-04-14 2010-03-23 Tango Systems, Inc. Oscillating magnet in sputtering system
KR20070121838A (en) * 2005-04-14 2007-12-27 탱고 시스템즈 인코포레이티드 Sputtering system
CZ305421B6 (en) 2014-02-26 2015-09-09 Hvm Plasma, Spol.S R.O. Method of entraining substrates when depositing thin layer onto substrate surfaces and rotary table for entraining substrates according the method
CN104233212B (en) * 2014-09-18 2017-01-25 中国科学院光电技术研究所 Mounting method capable of realizing direct optical control on film thickness on planetary rotation coating machine
CN109564955A (en) * 2017-08-02 2019-04-02 深圳市柔宇科技有限公司 Film-forming apparatus and film build method
KR20210016036A (en) * 2019-03-12 2021-02-10 가부시키가이샤 알박 Tabernacle Method

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Also Published As

Publication number Publication date
DE3934887A1 (en) 1990-04-26
JPH02210636A (en) 1990-08-22

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