JPH024966A - Sputtering device - Google Patents
Sputtering deviceInfo
- Publication number
- JPH024966A JPH024966A JP14651588A JP14651588A JPH024966A JP H024966 A JPH024966 A JP H024966A JP 14651588 A JP14651588 A JP 14651588A JP 14651588 A JP14651588 A JP 14651588A JP H024966 A JPH024966 A JP H024966A
- Authority
- JP
- Japan
- Prior art keywords
- target
- substrate
- magnet
- axis
- double
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 239000002245 particle Substances 0.000 description 8
- 239000010408 film Substances 0.000 description 7
- 239000007789 gas Substances 0.000 description 4
- 239000013077 target material Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 101150097381 Mtor gene Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
スパッター装置の構造に関し、
基板の損傷と、被着膜の段差被膜性が悪いという問題を
解決することを目的とし、
片面解放で内面が二重円筒型のターゲットと、該ターゲ
ットの直径に平行な方向に磁力線を発生する磁石と、該
ターゲットの外側に、かつその軸とほぼ垂直に被成長基
板を保持する手段とを有するように構成する。[Detailed Description of the Invention] [Summary] In order to solve the problems of damage to the substrate and poor step coverage of the deposited film regarding the structure of the sputtering device, we developed a sputtering device with one side open and the inner surface double cylindrical. The method includes a target, a magnet that generates magnetic lines of force in a direction parallel to the diameter of the target, and means for holding a growth substrate outside the target and substantially perpendicular to its axis.
本発明は、スパッター装置の構造に関する。スパッター
装置は、半導体装置の製造において、基板上への被膜の
形成、あるいはエツチングに広く使用されている。The present invention relates to the structure of a sputtering device. Sputtering equipment is widely used for forming or etching a film on a substrate in the manufacture of semiconductor devices.
第２図は、従来例によるスパッタ装置の構造を説明する
断面図である。図において、真空容器１は、排気口２よ
り排気し、ガス導入口３よりＡｒを導入して数ｍＴｏｒ
ｒに調節する。FIG. 2 is a sectional view illustrating the structure of a conventional sputtering apparatus. In the figure, a vacuum container 1 is evacuated through an exhaust port 2, and Ar is introduced through a gas inlet 3 to maintain a temperature of several mTor.
Adjust to r.
真空容器１内には、アルミニウム（ＡＩｌ）、６Ｍ（Ｃ
ｕ）、チタン（Ｔｉ）、シリコン（Ｓｉ ）、等よりな
るターゲット４が真空容器１と電気的に絶縁して置かれ
ている。ターゲット４の裏には磁石５が配置され、磁力
ｖＡ６を発生する。磁石５はターゲット４の表面におけ
るプラズマ密度をあげてスパッタ効率を向上するもので
、通常、このように磁石を使用した装置はマグネトロン
スパッタ装置と呼ばれている。なお、８は基板、７はバ
ンキングプレート、９は直流電源である。Inside the vacuum container 1 are aluminum (AIl), 6M (C
A target 4 made of titanium (Ti), silicon (Si), etc. is placed electrically insulated from the vacuum vessel 1. A magnet 5 is placed behind the target 4 and generates a magnetic force vA6. The magnet 5 increases the plasma density on the surface of the target 4 to improve sputtering efficiency, and an apparatus using a magnet in this manner is usually called a magnetron sputtering apparatus. Note that 8 is a substrate, 7 is a banking plate, and 9 is a DC power source.
従来は、被成長基板がプラズマに曝されるため、基板温
度は上昇し、損傷を受ける。また、ターゲット物質の垂
直入射成分が多いため、被着膜の段差被膜性が悪いとい
う問題があり、本発明はそれらの課題を解決しようとす
るものである。Conventionally, the substrate to be grown is exposed to plasma, which increases the substrate temperature and causes damage. Furthermore, since there are many vertically incident components of the target material, there is a problem in that the deposited film has poor step coverage, and the present invention is intended to solve these problems.
ｃ問題点を解決するための手段〕
上記問題点を解決するために、本発明においては、片面
解放で内面が二重円筒型のターゲットと、該ターゲット
の直径に平行な方向に磁力線を発生する磁石と、該ター
ゲットの外側に、かつその軸とほぼ垂直に被成長基板を
保持する手段とを有することを特徴とするスパッター装
置を提供するものである。前記磁石は前記ターゲット軸
の同心円上を回転するようにしてターゲットの使用効率
を上げることができる。c Means for Solving the Problems] In order to solve the above problems, the present invention uses a target whose one side is open and whose inner surface is double cylindrical, and generates lines of magnetic force in a direction parallel to the diameter of the target. A sputtering apparatus is provided, comprising a magnet and means for holding a growth substrate outside the target and substantially perpendicular to its axis. The magnet can be rotated on a concentric circle of the target axis to increase target usage efficiency.
一般に基板温度の上昇の主な原因は、基板上でのイオン
の再結合、電子、イオン、およびスパッター中性粒子の
もつ運動エネルギーと考えられる。Generally, the main causes of the increase in substrate temperature are considered to be the recombination of ions on the substrate and the kinetic energy of electrons, ions, and sputtered neutral particles.
本発明によれば、片面解放で内面が二重円筒ターゲット
を用い、半径方向に発生した磁場によりプラズマをター
ゲット内に閉じ込めている。この場合、各々のターゲッ
トから放出された電子が磁力線に巻きつき、また、陰極
であるターゲットで反射され、二重円筒のターゲット間
で往復運動を行う。被成長基板をターゲットの外側に、
かつその軸にほぼ垂直に保持することにより、基板に到
達するのがおもにスパッター粒子であるため、被成長基
板のプラズマによる損傷と温度上昇を抑制することがで
きる。According to the present invention, a cylindrical target with one side open and a double inner surface is used, and plasma is confined within the target by a magnetic field generated in the radial direction. In this case, electrons emitted from each target are wrapped around magnetic lines of force, reflected by the cathode target, and reciprocated between the double cylindrical targets. Place the growth substrate outside the target.
By holding the substrate substantially perpendicularly to its axis, it is mainly the sputtered particles that reach the substrate, so it is possible to suppress damage to the substrate to be grown and a rise in temperature caused by the plasma.
また、以上の説明のターゲット配置により、平板マグネ
トロン方式に比べて、ターゲット物質の基板への垂直入
射成分が減じ、散乱粒子成分が多くなるため、段差被膜
の良好な被膜を形成できる。Further, with the target arrangement described above, compared to the flat plate magnetron method, the normal incidence component of the target material to the substrate is reduced and the scattered particle component is increased, so that a film with a good step difference film can be formed.
また、磁石をターゲットの軸の周りに回転すれば、ター
ゲットエロージョンは均一となり、ターゲットの使用効
率を上げることができる。Further, by rotating the magnet around the axis of the target, target erosion becomes uniform and the efficiency of target use can be increased.
第１図（Ａ）、（Ｂ）は本発明によるスパッター装置の
構造を説明する要部の断面図と、側断面図である。FIGS. 1(A) and 1(B) are a sectional view and a side sectional view of a main part of the structure of a sputtering apparatus according to the present invention.
図において、真空容器１１は、排気口１２より排気し、
ガス導入口１３よりＡｒ （アルゴン）を導入して処理
圧力を数Ｔｏｒｒに調節さる。In the figure, a vacuum container 11 is evacuated from an exhaust port 12,
Ar (argon) is introduced through the gas inlet 13 to adjust the processing pressure to several Torr.
真空容器１１内には、主にＬＳＩ配線薄膜の構成金属材
料であるＡｒまたはＡ４合金（例えば八β−３ｉ、Ａｌ
１−Ｃｕ）等よりなる片面解放で内面が二重円筒形のタ
ーゲット１４が真空容器１１と電気的に絶縁して配置さ
れている。Inside the vacuum chamber 11, Ar or A4 alloy (e.g. 8β-3i, Al
A target 14 made of a material such as 1-Cu), which is open on one side and has a double inner surface, is arranged to be electrically insulated from the vacuum vessel 11.
ターゲット１４の中心と外側には、磁石１５が配置され
、磁力線１６を発生する。この磁石は、Ｎ、 Ｓ極が
対向するように配置し、磁石の強度は３００ガウス程度
としている。なお、プラズマを実質的にターゲット間に
閉じ込めるために、磁石の強度は二重円筒のターゲット
間の幅ｄが広くなればそれだけ強度を上げることが必要
となる。磁石１５はターゲットの中心軸の周りを回転し
てターゲット１４の使用効率を上げている。実施例の回
転速度は、４０ ｒｐｍ程度とした。ターゲット１４は
ターゲット背面に密着させて設けられたバッキングプレ
ート１７により間接的に水冷される。Magnets 15 are arranged at the center and outside of the target 14, and generate lines of magnetic force 16. The magnets are arranged so that the N and S poles face each other, and the strength of the magnet is approximately 300 Gauss. In order to substantially confine the plasma between the targets, it is necessary to increase the strength of the magnet as the width d between the double cylinder targets increases. The magnet 15 rotates around the central axis of the target to increase the usage efficiency of the target 14. The rotation speed in the example was approximately 40 rpm. The target 14 is indirectly water-cooled by a backing plate 17 provided in close contact with the back surface of the target.
ターゲット１４の外側に、かつ円筒の中心軸に垂直に被
成長基板１８が真空容器１１とともに電気的に接地また
は絶縁されて配置されている。A growth substrate 18 is placed outside the target 14 and perpendicular to the central axis of the cylinder, together with the vacuum vessel 11, so as to be electrically grounded or insulated.
ターゲット１４には負の電位（＝数百〜−敗千Ｖ）が直
流電源１９より印加される。A negative potential (=several hundreds to -1,000 volts) is applied to the target 14 from a DC power supply 19.
このような構造では、磁力線１６によりプラズマがター
ゲト内に効率良く補足され、ガンマ電子や負イオンの基
板への入射を抑えることができ、基板には、主にスパッ
タ粒子のみが到達するため、基板衝撃が少なく、基板の
損傷と温度上昇を抑えることができる。また、第１図（
Ａ）の構成では、ターゲットの基板と平行な部分１４ａ
、 １４ｂは、実質的にターゲットとして作用せず（１
４ａ、 １４ｂは電気的な接続がとれればよい）、基板
１８に対面しない二重円筒の内面がターゲ７）として作
用するので、ターゲットと基板の配置上、基板には実質
的にターゲット物質の散乱粒子のみが到達してくる。従
って段差被膜の良好な被膜を形成することかできる。ま
た、磁石を回転させるため、ターゲットのエロージョン
は均一であり、効率良い使用が可能となる。In such a structure, the plasma is efficiently captured within the target by the magnetic lines of force 16, and it is possible to suppress the incidence of gamma electrons and negative ions on the substrate, and since only sputtered particles mainly reach the substrate, the substrate There is less impact, and damage to the board and temperature rise can be suppressed. Also, Figure 1 (
In configuration A), the portion 14a parallel to the target substrate
, 14b does not substantially act as a target (1
4a and 14b only need to be electrically connected), and the inner surface of the double cylinder that does not face the substrate 18 acts as the target 7), so due to the arrangement of the target and the substrate, there is substantially no scattering of the target material on the substrate. Only particles arrive. Therefore, it is possible to form a film with a good step difference film. Furthermore, since the magnet is rotated, the erosion of the target is uniform, allowing for efficient use.
以上の実施例において、主に散乱粒子により被膜が形成
されるので、用途によっては、スパッタ速度が遅過ぎる
場合がある。その場合には、破線１４ｃに示すように、
二重円筒の内面にテーパーを形成し、基板に向かうスパ
ッタ粒子を増加し、スパッタ速度を大きくすることがで
きる。In the above embodiments, since the coating is formed mainly by scattering particles, the sputtering speed may be too slow depending on the application. In that case, as shown by the broken line 14c,
By forming a taper on the inner surface of the double cylinder, the number of sputtered particles directed toward the substrate can be increased, and the sputtering speed can be increased.
以上説明したように、本発明によれば、被成長基板のプ
ラズマによる損傷と、温度上昇を抑制できる。As described above, according to the present invention, damage to the growth substrate caused by plasma and temperature rise can be suppressed.
また、主にターゲット物質の散乱粒子の基板到達により
、段差被膜率の高い薄膜を形成することができる。Moreover, a thin film with a high step coverage can be formed mainly by the scattering particles of the target material reaching the substrate.
さらに、本発明の構造上、ターゲットの使用効率は非常
に良くなる。Furthermore, due to the structure of the present invention, the target usage efficiency is greatly improved.
第１図は、本発明の実施例の構成図であり、（Ａ＞、（
Ｂ）は、それぞれ要部の断面図、および側断面図、
第２図は、従来例の装置の断面図である。
１は真空容器
２は排気口
３はガス導入口
４はターゲット
５は磁石
６は磁力線
１１は真空容器
１２は排気口
１３はガス導入口
１４は二重円筒形のターゲット
１５は磁石
１６は磁力線
１７はバッキングプレート
１８は被成長基板
１９は直流電源
明の実施例の構成図
嬉 １ 図FIG. 1 is a block diagram of an embodiment of the present invention, (A>, (
B) is a sectional view and a side sectional view of essential parts, respectively, and FIG. 2 is a sectional view of a conventional device. 1 is a vacuum container 2 is an exhaust port 3 is a gas inlet 4 is a target 5 is a magnet 6 is a line of magnetic force 11 is a vacuum container 12 is an exhaust port 13 is a gas inlet 14 is a double cylindrical target 15 is a magnet 16 is a line of magnetic force 17 The backing plate 18 is the growth substrate 19, and the DC power source is shown in Figure 1.
Claims (2)
ーゲットの直径に平行な方向に磁力線を発生する磁石と
、該ターゲットの外側に、かつその軸とほぼ垂直に被成
長基板を保持する手段とを有することを特徴とするスパ
ッタ装置。(1) A target with one side open and a double cylindrical inner surface, a magnet that generates magnetic lines of force in a direction parallel to the diameter of the target, and a growth substrate held outside the target and approximately perpendicular to its axis. A sputtering apparatus comprising: means.
る手段を有することを特徴とする特許請求の範囲第１項
記載のスパッタ装置。(2) The sputtering apparatus according to claim 1, wherein the magnet has means for rotating around the axis of the target.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14651588A JPH024966A (en) | 1988-06-13 | 1988-06-13 | Sputtering device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14651588A JPH024966A (en) | 1988-06-13 | 1988-06-13 | Sputtering device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH024966A true JPH024966A (en) | 1990-01-09 |
Family
ID=15409387
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14651588A Pending JPH024966A (en) | 1988-06-13 | 1988-06-13 | Sputtering device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH024966A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09228038A (en) * | 1996-02-23 | 1997-09-02 | Balzers Prozes Syst Gmbh | Device for coating substrate by cathode sputtering provided with hollow target |
| KR100320233B1 (en) * | 1999-12-16 | 2002-01-10 | 이성필 | Reactive spurttering system cosisting of double targets and coating techniques of carbon nitride film |
| US6406599B1 (en) * | 2000-11-01 | 2002-06-18 | Applied Materials, Inc. | Magnetron with a rotating center magnet for a vault shaped sputtering target |
| US6436251B2 (en) * | 2000-01-21 | 2002-08-20 | Applied Materials, Inc. | Vault-shaped target and magnetron having both distributed and localized magnets |
| US6485617B2 (en) * | 2000-01-21 | 2002-11-26 | Applied Materials, Inc. | Sputtering method utilizing an extended plasma region |
| US6743342B2 (en) * | 2002-03-12 | 2004-06-01 | Applied Materials, Inc. | Sputtering target with a partially enclosed vault |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57158381A (en) * | 1981-03-27 | 1982-09-30 | Nippon Sheet Glass Co Ltd | Magnetron sputtering device |
| JPS63100176A (en) * | 1986-10-15 | 1988-05-02 | Fujitsu Ltd | Sputtering device |
-
1988
- 1988-06-13 JP JP14651588A patent/JPH024966A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57158381A (en) * | 1981-03-27 | 1982-09-30 | Nippon Sheet Glass Co Ltd | Magnetron sputtering device |
| JPS63100176A (en) * | 1986-10-15 | 1988-05-02 | Fujitsu Ltd | Sputtering device |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09228038A (en) * | 1996-02-23 | 1997-09-02 | Balzers Prozes Syst Gmbh | Device for coating substrate by cathode sputtering provided with hollow target |
| KR100320233B1 (en) * | 1999-12-16 | 2002-01-10 | 이성필 | Reactive spurttering system cosisting of double targets and coating techniques of carbon nitride film |
| US6436251B2 (en) * | 2000-01-21 | 2002-08-20 | Applied Materials, Inc. | Vault-shaped target and magnetron having both distributed and localized magnets |
| US6444104B2 (en) | 2000-01-21 | 2002-09-03 | Applied Materials, Inc. | Sputtering target having an annular vault |
| US6451177B1 (en) | 2000-01-21 | 2002-09-17 | Applied Materials, Inc. | Vault shaped target and magnetron operable in two sputtering modes |
| US6485617B2 (en) * | 2000-01-21 | 2002-11-26 | Applied Materials, Inc. | Sputtering method utilizing an extended plasma region |
| US6787006B2 (en) | 2000-01-21 | 2004-09-07 | Applied Materials, Inc. | Operating a magnetron sputter reactor in two modes |
| US6406599B1 (en) * | 2000-11-01 | 2002-06-18 | Applied Materials, Inc. | Magnetron with a rotating center magnet for a vault shaped sputtering target |
| WO2002037528A3 (en) * | 2000-11-01 | 2003-04-24 | Applied Materials Inc | Magnetron with a rotating center magnet for a vault shaped sputtering target |
| US6790326B2 (en) | 2000-11-01 | 2004-09-14 | Applied Materials, Inc. | Magnetron for a vault shaped sputtering target having two opposed sidewall magnets |
| US6743342B2 (en) * | 2002-03-12 | 2004-06-01 | Applied Materials, Inc. | Sputtering target with a partially enclosed vault |
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