JP3336421B2 - Sputtering equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputtering apparatus which can be used, for example, for forming a thin film in the manufacture of semiconductor devices.

[0002]

2. Description of the Related Art Generally, in a sputtering apparatus, a target is fixedly arranged or mounted in a vacuum vessel, and an object to be processed is detachably arranged opposite to the target, so that the target is an anode and the object is a cathode. A DC or high-frequency voltage is applied between them to generate plasma near the target surface, causing ions in the plasma to collide with the target surface and depositing sputtered particles repelled from the target surface on the target object to form a film. Is formed.
As a discharge gas, that is, a gas for generating plasma, an inert gas having a large mass, for example, an Ar gas is used. Also, in order to increase the sputtering efficiency, a magnetic field is formed near the surface of the target so that high-density plasma is confined therein.

[0003]

By the way, in sputtering, the flying direction of sputtered particles repelled from the surface of the target has a distribution substantially according to the cosine law. For this reason, on the object to be processed, a portion facing the center of the target is more likely to be exposed to a relatively large amount of sputtered particles, and when the object to be processed is a semiconductor wafer, the film thickness at the central portion of the wafer is relatively small. It tends to be thicker than the film thickness.

[0004] In order to improve the non-uniformity of the film thickness in such sputtering, a device has been devised to have vertical directivity in the flying direction of sputtered particles with respect to an object to be processed. For example, a configuration is adopted in which the distance between the target and the object is increased or a collimator is arranged between the target and the object. The flying direction of the sputtered particles can also be controlled by controlling the temperature of the target and the ion incident energy. However, even in such a case, if the target does not have a sufficiently large area with respect to the object to be processed as the diameter of the object to be processed (wafer) increases, the target is uniformly formed on the object to be processed. It is difficult to form a film, and the thickness of the peripheral portion tends to be reduced.

Further, the electric field near the surface of the target is weakened by increasing the distance between the target and the object to be processed or by disposing a collimator between the target and the object to be processed. There is a problem that the efficiency is reduced, and the sputtering efficiency is reduced. Even if the applied voltage between the target and the object to be processed is increased, the plasma generation efficiency or the sputtering efficiency is not so much improved despite the increased power consumption.

[0006] In sputtering, a part of plasma ions (for example, Ar ions) may be incident on an object to be processed. The incidence of such plasma ions has the advantage of densifying the film when there are many gaps in the film formed on the object to be processed, but usually there is a risk of damaging the film or mixing impurities. It is considered undesirable for the film quality. Conventionally, there has been no way to control or adjust the amount of plasma ions incident on the object to be processed independently of other process parameters.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned conventional problems, and improves the utilization efficiency of supplied electric power, has a substantially uniform film thickness on a surface of an object to be processed, and further has a good film quality. It is an object to provide a sputtering apparatus capable of forming a desired film.

[0008]

In order to achieve the above object, a first sputtering apparatus according to the present invention comprises a vacuum vessel
A plate-like target placed inside the anode
And a cathode electrode for applying a cathode voltage to the target.
Pressure application means, and discharge gas near the surface of the target.
Discharge gas supply means for supplying, and a surface of the target
Magnetic field generation that generates a magnetic field for confining the plasma nearby
Generator, and disposed between the target and the object to be processed.
Of the sputtered particles from the target.
Having a direction substantially perpendicular to the film forming surface of the treated body
A first collimator passing only through the first collimator;
An anode voltage applying means for applying an anode voltage to the first electrode;
The collimator is disposed between the collimator and the object,
Film formation of the object to be processed among sputtered particles from the get
Second to pass only those having a direction substantially perpendicular to the plane
And the object to be processed is provided on the second collimator.
Voltage to control the amount of ions incident on
The configuration has an ion incident amount control voltage applying means.

[0009] The second sputtering apparatus of the present invention is a true sputtering apparatus.
Plate-shaped placed in the empty container facing the object on the anode side
And applying a cathode voltage to the target
Cathode voltage applying means and discharge near the surface of the target
Discharge gas supply means for supplying a gas;
Generates a magnetic field to confine the plasma near the surface
Magnetic field generating means, between the target and the object to be processed
Among the sputtered particles from the target
Has a direction substantially perpendicular to the film forming surface of the object to be processed
A collimator that only passes through the collimator and an anode
Anode voltage applying means for applying a voltage, and the collimator
A mesh electrode disposed between the object and the object;
The amount of ions incident on the electrode to be processed to the electrode is controlled.
And an ion incident amount control voltage applying means for applying a voltage for
Configuration.

[0010] The third sputtering apparatus of the present invention is a true sputtering apparatus.
Plate-shaped placed in the empty container facing the object on the anode side
And applying a cathode voltage to the target
Cathode voltage applying means and discharge near the surface of the target
Discharge gas supply means for supplying a gas;
Generates a magnetic field to confine the plasma near the surface
Magnetic field generating means, between the target and the object to be processed
And an anode voltage applied to the mesh electrode.
Means for applying an anode voltage to be applied;
Placed between the body and the sputtered particles from the target
One that is substantially perpendicular to the film forming surface of the object to be processed.
A collimator that only passes through the collimator,
To control the amount of ions entering the object to be processed
And an ion incident amount control voltage applying means for applying a voltage of
Configuration.

[0011] The fourth sputtering apparatus of the present invention is a true sputtering apparatus.
Plate-shaped placed in the empty container facing the object on the anode side
A first target, and a first target
First cathode voltage applying means for applying a cathode voltage;
In the empty container, the object to be processed is more than the first target.
Placed closer and more radius than the first target
A second target annularly extending outward in the direction,
A second cathode for applying a second cathode voltage to the second target
Voltage applying means and a table of the first and second targets
Discharge gas supply means for supplying a discharge gas near the surface,
Close plasma near the surfaces of the first and second targets
Magnetic field generating means for generating a magnetic field for
2 is disposed between the target and the object to be processed,
Film of the object to be processed among sputtered particles from the target
Pass only those that have a direction substantially perpendicular to the forming surface
A first collimator, and an anode voltage applied to the first collimator.
Voltage applying means for applying a voltage, and the first collimator
And between the target and the target,
Of the sputtered particles, the film formation surface of the object to be processed is
Second collimator passing only those having a substantially vertical direction
And the second collimator is incident on the object to be processed.
Ion injection to apply voltage to control the amount of ions
And a quantity control voltage applying means.

[0012] The fifth sputtering apparatus of the present invention is a true sputtering apparatus.
Plate-shaped placed in the empty container facing the object on the anode side
A first target, and a first target
First cathode voltage applying means for applying a cathode voltage;
In the empty container, the object to be processed is more than the first target.
Placed closer and more radius than the first target
A second target annularly extending outward in the direction,
A second cathode for applying a second cathode voltage to the second target
Voltage applying means and a table of the first and second targets
Discharge gas supply means for supplying a discharge gas near the surface,
Close plasma near the surfaces of the first and second targets
Magnetic field generating means for generating a magnetic field for
2 is disposed between the target and the object to be processed,
Film of the object to be processed among sputtered particles from the target
Pass only those that have a direction substantially perpendicular to the forming surface
A collimator and a positive electrode for applying an anode voltage to the collimator.
Pole voltage applying means, the collimator and the object to be processed
A reticulated electrode disposed between the reticulated electrodes;
Apply voltage to control the amount of ions entering the body
And an ion incident amount control voltage applying means.
Was.

[0013] The sixth sputtering apparatus of the present invention is a true sputtering apparatus.
Plate-shaped placed in the empty container facing the object on the anode side
A first target, and a first target
First cathode voltage applying means for applying a cathode voltage;
In the empty container, the object to be processed is more than the first target.
Placed closer and more radius than the first target
A second target annularly extending outward in the direction,
A second cathode for applying a second cathode voltage to the second target
Voltage applying means and a table of the first and second targets
Discharge gas supply means for supplying a discharge gas near the surface,
Close plasma near the surfaces of the first and second targets
Magnetic field generating means for generating a magnetic field for
2 placed between the target and the object to be processed
An electrode and an anode voltage mark for applying an anode voltage to the mesh electrode;
Processing means, disposed between the mesh electrode and the object to be processed.
Of the sputtered particles from the target.
Although it has a direction almost perpendicular to the film formation surface of the body,
A collimator that passes through the object to be processed through the collimator.
Voltage to control the amount of ions incident on
The configuration has an ion incident amount control voltage applying means.

The seventh sputtering apparatus of the present invention
In each of the first to sixth sputtering apparatuses,
Said collimator and / or at least one of said mesh electrodes
The surface portion is formed of the same material as the target.
It was successful.

An eighth sputtering apparatus according to the present invention is characterized in that
In the first to seventh sputtering apparatuses, the target
The collimator or the mesh placed closer to the get
The anode voltage applied to the electrode is the voltage applied to the object.
The value is set to be approximately equal to.

A ninth sputtering apparatus according to the present invention
In the first to eighth sputtering apparatuses,
The collimator or the reticulated light arranged closer to the body;
The ion amount control voltage applied to the pole is
The configuration is set to a relatively high or low value.

The first, second or third sputtering
Target, and placed closer to the target
Formed between the collimator or mesh electrode
Plasma is generated under the field, and the generated plasma is magnetic.
Target surface by the magnetic field formed by the field generating means
Entrapped in the vicinity, ions in the plasma are targeted
Spattered particles bounce off from the surface
It is. Thus, the target and the collimator or mesh
Since plasma is generated under an electric field between the electrodes,
Even if the distance between the target and the workpiece is increased,
Efficient use of the power input for plasma generation and excellent plasma
The production rate or sputtering efficiency can be secured. I
The sputtered particles are treated by the collimator
Since the light enters the film formation surface of the body almost perpendicularly,
Can improve the uniformity of the film thickness. In addition,
Collimator or reticulated electrode located closer to the processing object
By adjusting the applied voltage,
Optimization of the amount of ions without interaction with the plasma generator
As a result, good film quality can be obtained.

Further , the fourth, fifth or sixth sputters
In addition to the above functions and effects,
Sputtered particles from the target 1
Is deposited relatively in the vicinity, and the second target
A relatively large amount of sputter particles are deposited near the periphery of the workpiece.
The first and second applied to each
By selecting an appropriate value for the second cathode voltage and the second cathode voltage,
The in-plane uniformity of the upper film thickness can be further improved.

Further, in the seventh sputtering apparatus,
Is a collimator and / or
Indicates that secondary sputtered particles from the reticulated electrode enter the workpiece
Even though it is the same material as the film-forming material,
Deterioration of the film quality of the deposited film can be avoided.

[0020]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the accompanying drawings.

FIG. 1 is a schematic sectional view showing a main structure of a sputtering apparatus according to this embodiment.

The container 10 of this sputtering apparatus is made of, for example, aluminum and is formed as a cylindrical chamber capable of vacuuming. A disk-shaped main target 12 is attached to a support member or a sputter gun (not shown) in a downward or inward direction at an upper portion in the container 10. The main target 12 is formed of a film forming material such as aluminum, titanium, titanium nitride, or the like. A mounting table 14 is fixedly disposed at a position substantially directly opposite to the main target 12 in the lower portion of the container 10, and an object to be processed, such as a semiconductor wafer W, is removably mounted (mounted) on the mounting table 14. A heating mechanism (not shown) is provided on the mounting table 14.
Is built-in. The semiconductor wafer W is put in and out of the container through a gate valve (not shown) provided on the side wall of the container 10.

The wafer mounting table 14 is connected to the ground potential (0 volt) via the container 10. The main target 12 receives a negative DC voltage -V0 (for example, -50) from the DC power supply 13.
0 to 1000 volts). Thereby, the semiconductor wafer W on the wafer mounting table 14 becomes an anode, and the main target 12 becomes a cathode.

A magnet assembly 16 for generating a magnetic field for confining high-density plasma near the surface (lower surface) 12a of the main target 12 is provided behind the main target 12 and outside the vacuum vessel 10. In this embodiment, a plurality of magnet assemblies 16 are radially disposed about a (virtual) central axis of the main target 12 and are driven about a target central axis by a drive motor, rotary support members, and the like (not shown). It is configured to rotate.

A ring-shaped auxiliary target 18 having an inner diameter larger than the diameter of the main target 12 is disposed near and immediately below the main target 12. The auxiliary target 18 is made of the same film-forming material as the main target 12, and is attached to the container 10 via a support member (not shown). The auxiliary target 18 has a negative DC voltage -V1 (for example, -100) from the DC power supply 15.
~ -500 volts), whereby the auxiliary target 18 is also a cathode.

A gap is provided between the main target 12 and the auxiliary target 18, and the tip (gas discharge port) of the gas supply pipe 20 faces this gap. A discharge gas such as Ar gas is supplied from a discharge gas supply unit (not shown) outside the container 10 via a gas supply pipe 20 to the surface (lower surface) 12a of the main target 12 and the surface (inner surface) of the auxiliary target 18
18a. An exhaust port 10a is provided at a lower portion of the side wall of the container 10, and the exhaust port 10a is connected to an external vacuum exhaust device (not shown) via an exhaust pipe 21. The inside of the container 10 is depressurized to a predetermined degree of vacuum by the evacuation device.

Disc-shaped first and second collimators 22 and 24 having a diameter larger than the semiconductor wafer W are coaxially arranged between the targets 12 and 18 and the mounting table 14. These collimators 22 and 24 have a configuration in which, for example, a large number of pipes or cylindrical portions P are densely arranged in parallel (with their axes aligned) as shown in FIG. It functions as a filter that allows only particles in the substantially axial direction (vertical direction) of the sputtered particles to pass. In other words, the sputtered particles Sa incident on the upper opening of the cylindrical portion P at a small incident angle in the vertical direction or close to the upper direction pass through the cylinder as it is and escape from the lower opening (downward). The particles Sb hit the inner wall surface of the cylinder and adhere thereto, so that the particles Sb cannot escape outside (downward) of the cylinder part P. The critical angle of incidence of the sputtered particles S that can pass through the cylinder P is determined by the aspect ratio (W / H) of the cylinder P.

As described above, the collimators 22 and 24 have a function of adsorbing sputter particles incident at an oblique angle on the inner wall surface of the cylindrical portion P and absorbing them. In order to increase the adhesion rate or the absorption rate, it is preferable to select the same material for the collimators 22 and 24 as the film forming material. When the plasma ions impinge on the collimators 22 and 24, secondary sputtered particles are repelled from the collimator surface, and may be incident on the semiconductor wafer W. Also from this point, it is preferable that at least the surface portion of both collimators, especially at least the surface of the second collimator 24 close to the semiconductor wafer W, is made of the same material as the film forming material.

The first collimator 22 near the targets 12 and 18 is connected to the ground potential VE (0
Bolt). The second collimator 24 near the wafer mounting table 14 receives a positive voltage + V2 from the DC power supply 17.
(For example, +100 to +500 volts).

Semiconductor wafer W (strictly speaking, wafer mounting table 1
With reference to the position 4), distances of the main target 12, the auxiliary target 18, the first and second collimators 22, 24 from the reference position are D (12), D (18), D (2), respectively.
2) and D (24), the potential distribution between the parts is as shown in FIG.
,,become that way. The curve shows the potential distribution between the main target 12 and the first collimator 22, the curve shows the potential distribution between the auxiliary target 18 and the first collimator 22, and the curve shows the potential distribution between the first collimator 22 and the second collimator 24. The curve shows the potential distribution between the second collimator 24 and the semiconductor wafer (strictly, the wafer mounting table 14). Note that, in order to schematically illustrate, the potential gradient (electric field) is constant in each section, and each curve is represented as one straight line.

From the potential distribution diagram of FIG. 3, the first collimator
Since 22 is placed at substantially the same potential as the semiconductor wafer W, it can be seen that it substantially functions as an anode with respect to the targets 12 and 18 on the cathode side. First collimator 2 2
Since the target and the targets 12 and 18 are close to each other, a strong electric field corresponding to the steep slope of the curve is obtained between the two. Thereby, the DC power supply 1
Although the bias voltages -V1, + V2 from 3, 15 are chosen to be relatively low values, the surfaces 12a,
High density plasma is generated near 18a.

Next, the operation of the sputtering apparatus of this embodiment will be described.

Targets 12, 18 and collimator 2
Electric power is supplied to the substrates 2 and 24, the magnet assembly 16 is rotated behind the targets 12 and 18, the semiconductor wafer W is placed on the mounting table 14, and the pressure of the container 10 is reduced to a predetermined degree of vacuum, for example, 1.0. Under a state where the pressure is reduced to milliTorr, the discharge gas (Ar) is supplied through the gas supply pipe 20.
Is supplied.

Thus, the surface 12 of the main target 12
a high-density plasma that rotates to trace a
Ar ions in the plasma collide with the surface 12a of the main target 12, and sputtered particles are repelled from there. The flying direction of the sputtered particles repelled from the surface 12a of the main target 12 has a downward distribution substantially in accordance with the cosine law. Also, some A from the plasma
The r ions enter or collide obliquely downward with respect to the surface 18a of the auxiliary target 18, and sputter particles are also ejected obliquely downward therefrom.

The sputtered particles from the targets 12 and 18 first enter the first collimator 22, and only the sputtered particles in a substantially vertical direction pass vertically downward from the first collimator 22. Among the sputtered particles from the main target 12, those that pass through the first collimator 22 are relatively larger at the center of the first collimator 22 than at the periphery. However, among the sputtered particles from the auxiliary target 18 , those that pass through the first collimator 22 are relatively larger on the peripheral side of the first collimator 22 than on the center side. By selecting independent bias voltages -V0 and -V1 applied to both targets 12 and 18 to appropriate values, the density of sputter particles passing through the first collimator 22 can be made substantially uniform in the plane of the collimator 22. it can.

Since the first collimator 22 is connected to the ground potential (anode potential), most of the electrons flying from the plasma are captured by the collimator 22. Further, the first collimator 22 gives an electric field in the opposite direction (in the direction of pushing back) to Ar ions from the plasma, and suppresses the amount of Ar ions flying toward the half wafer W.

The sputtered particles passing through the first collimator 22 pass straight through the second collimator 24 as they are, are incident on the surface (film forming surface) of the semiconductor wafer W, and are deposited there. Since the density of sputtered particles passing through the second collimator 24 is also substantially uniform in the plane of the collimator 24, a film is formed on the semiconductor wafer W to have a substantially uniform thickness in the plane of the wafer.

When a positive bias voltage + V 2 is applied, the second collimator 24 has a higher potential than the first collimator 22 as shown by the curve in FIG. 3 and has a potential barrier against plasma ions (Ar). To form In this case, the plasma ions incident on the semiconductor wafer W are further suppressed by the second collimator 24.

Of course, a negative bias voltage -V2 'may be applied to the second collimator 24, and if such a bias is applied, the curve', 'in FIG. A potential distribution as shown by is obtained. In this case, the second collimator 24 is the first collimator 2
Since it acts to draw in plasma ions from the two sides, the amount of plasma ions incident on the semiconductor wafer W can be increased.

As described above, by changing the polarity or the absolute value of the bias voltage applied to the second collimator 24, the amount of plasma ions incident on the semiconductor wafer W can be controlled or adjusted. It is possible to form a film with a desired film quality thereon.

The surfaces or walls of the first and second collimators 22 and 24 are hit by the plasma ions,
From there, the secondary sputtered particles may be repelled and enter the semiconductor wafer W. However, in the present embodiment, at least the surface material of the collimators 22 and 24 is formed of the same material (for example, aluminum) as the material of the targets 12 and 18, that is, the film-forming material. Even if the next sputtered particles enter the semiconductor wafer W, there is no possibility that the film formed on the wafer W is deteriorated. The collimators 22 and 24 may be made of a material different from the film forming material as long as the film on the wafer W is not deteriorated.

As described above, in the sputtering apparatus according to the present embodiment, the auxiliary target 18 extending annularly outside the main target 12 is disposed at a position closer to the semiconductor wafer W than the main target 12. And the second
By selecting the bias voltages -V0, -V1 applied to the target at an appropriate value, the targets 12, 18
The first and second collimators 22 and 24 are disposed between the semiconductor wafer W and the semiconductor wafer W, and the bias voltages VE and V2 applied to these collimators 22 and 24 are selected to have appropriate values. The film can be formed with a substantially uniform film thickness and good film quality in the wafer surface.

The surface shape of the main target 12 is not limited to a flat plate, but may be any shape, for example, a concave or convex shape. If necessary, the main target or the auxiliary target can be constituted by a plurality of partial targets.

In the collimators 22 and 24, the configuration shown in FIG. 2 is an example, and other shapes or arrangement patterns of the cylinders may be used. For example, the aspect ratio (W / H) of the cylinders
Can be changed in the radial direction of the collimator. Also, by making the diameter of the second collimator smaller than that of the first collimator, it is possible to achieve good film thickness uniformity. The structures or materials of the two collimators 22 and 24 may be different. Both collimators 2
In place of the second collimator 24, for example, a mesh electrode (grid) through which sputtered particles having an arbitrary direction pass may be provided. Further, a third collimator or grid may be provided as necessary.

Targets 12, 18 and collimator 2
The bias voltage applied to 2, 4 can be selected to any value. Therefore, the potential distribution shown in FIG. 3 is an example, and can be set to an arbitrary potential distribution.

Even with a configuration in which the auxiliary target according to the present invention is provided without providing a collimator or grid, it is possible to improve the uniformity of the film thickness to some extent. Also,
Even in the configuration in which the collimator, grid, or other mesh electrode according to the present invention is provided without providing the auxiliary target, it is possible to improve the film quality as well as the film thickness uniformity to some extent.

The object to be processed is not limited to the semiconductor wafer W, but may be, for example, a magnetic disk or an LCD substrate. INDUSTRIAL APPLICABILITY The sputtering apparatus of the present invention can be used in various film forming processes in addition to a film forming step in semiconductor device manufacturing.

[0048]

As described above, according to the sputtering apparatus of the present invention, it is possible to improve the utilization efficiency of input power,
A desired film can be formed with a substantially uniform film thickness on the surface of the object to be processed and further with good film quality.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view showing a main configuration of a sputtering apparatus according to one embodiment of the present invention.

FIG. 2 is a partial perspective view showing a structure of a collimator in the embodiment.

FIG. 3 is a diagram schematically showing a potential distribution in a vacuum vessel of a sputtering apparatus according to an example.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 Vacuum container 12 Main target 14 Wafer mounting table 16 Magnet assembly 18 Auxiliary target 22 1st collimator 24 2nd collimator 13,15,17 DC power supply

──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int. Cl. ⁷ , DB name) C23C 14/00-14/58 H01L 21/203 H01L 21/285

Claims (9)

(57) [Claims] An anode-side object to be treated in a vacuum vessel;
A plate-shaped target disposed Te, the cathode voltage applying means for applying a negative voltage to the target
And a discharge gas for supplying a discharge gas near the surface of the target.
Means for supplying plasma and confining plasma near the surface of the target
Magnetic field generating means for generating a magnetic field of, and disposed between the target and the object to be processed,
Film of the object to be processed among sputtered particles from the target
Pass only those that have a direction substantially perpendicular to the forming surface
A first collimator and an anode voltage mark for applying an anode voltage to the first collimator;
And a processing unit, disposed between the first collimator and the object to be processed.
Of the sputtered particles from the target.
Although it has a direction almost perpendicular to the film formation surface of the body,
A second collimator that passes through the ion beam and ions that enter the object to be processed into the second collimator
Control of the amount of incident ions by applying a voltage to control the amount of ions
A sputtering apparatus having a voltage application unit . 2. An object facing an object to be treated on the anode side in a vacuum vessel.
A plate-shaped target disposed Te, the cathode voltage applying means for applying a negative voltage to the target
And a discharge gas for supplying a discharge gas near the surface of the target.
Means for supplying plasma and confining plasma near the surface of the target
Magnetic field generating means for generating a magnetic field of, and disposed between the target and the object to be processed,
Film of the object to be processed among sputtered particles from the target
Pass only those that have a direction substantially perpendicular to the forming surface
A collimator, and an anode voltage applying means for applying an anode voltage to the collimator
And a mesh disposed between the collimator and the object to be processed.
The amount of ions incident on the electrode and the mesh electrode on the object to be processed is controlled.
Ion incidence amount control voltage applied to mark pressurizing a voltage for Gosuru
And a sputtering apparatus. 3. An anode-side object to be processed in a vacuum vessel.
A plate-shaped target disposed Te, the cathode voltage applying means for applying a negative voltage to the target
And a discharge gas for supplying a discharge gas near the surface of the target.
Means for supplying plasma and confining plasma near the surface of the target
Magnetic field generating means for generating a magnetic field, and a mesh disposed between the target and the object to be processed
An electrode, and an anode voltage applying means for applying an anode voltage to the mesh electrode
Disposed between the mesh electrode and the object to be processed;
Film shape of the object to be processed among sputtered particles from the target
Through only those having a direction substantially perpendicular to the surface
A remeter and an amount of ions incident on the object to be processed into the collimator.
Ion incident amount control voltage mark to apply voltage for control
And a sputtering device. 4. An anode-side object to be processed in a vacuum vessel.
And a first target for applying a first cathode voltage to the first target.
Means for applying a cathode voltage to the target,
Placed at a position close to the body,
A second target extending annularly outward in the radial direction; and a second target for applying a second cathode voltage to the second target.
Cathode voltage applying means, and a discharge gas near the surfaces of the first and second targets.
Discharge gas supply means for supplying plasma and plasma near the surfaces of the first and second targets
A magnetic field generating means for generating a magnetic field for confining the object, and a magnetic field generating means disposed between the second target and the object to be processed.
Of the sputtered particles from the target.
Although it has a direction almost perpendicular to the film formation surface of the body,
A first collimator that passes through the first collimator, and an anode voltage mark that applies an anode voltage to the first collimator.
And a processing unit, disposed between the first collimator and the object to be processed.
Of the sputtered particles from the target.
Although it has a direction almost perpendicular to the film formation surface of the body,
A second collimator that passes through the ion beam and ions that enter the object to be processed into the second collimator
Control of the amount of incident ions by applying a voltage to control the amount of ions
A sputtering apparatus having a voltage application unit . 5. An anode-side object to be treated facing in a vacuum vessel.
And a first target for applying a first cathode voltage to the first target.
Means for applying a cathode voltage to the target,
Placed at a position close to the body,
A second target extending annularly outward in the radial direction; and a second target for applying a second cathode voltage to the second target.
Cathode voltage applying means, and a discharge gas near the surfaces of the first and second targets.
Discharge gas supply means for supplying plasma and plasma near the surfaces of the first and second targets
A magnetic field generating means for generating a magnetic field for confining the object, and a magnetic field generating means disposed between the second target and the object to be processed.
Of the sputtered particles from the target.
Although it has a direction almost perpendicular to the film formation surface of the body,
A collimator that passes through the collimator, and an anode voltage applying unit that applies an anode voltage to the collimator.
And a mesh disposed between the collimator and the object to be processed.
The amount of ions incident on the electrode and the mesh electrode on the object to be processed is controlled.
Ion incidence amount control voltage applied to mark pressurizing a voltage for Gosuru
And a sputtering apparatus. 6. An anode-side object to be processed in a vacuum vessel.
And a first target for applying a first cathode voltage to the first target.
Means for applying a cathode voltage to the target,
Placed at a position close to the body,
A second target extending annularly outward in the radial direction; and a second target for applying a second cathode voltage to the second target.
Cathode voltage applying means, and a discharge gas near the surfaces of the first and second targets.
Discharge gas supply means for supplying plasma and plasma near the surfaces of the first and second targets
Magnetic field generating means for generating a magnetic field for confining the target, and disposed between the second target and the object to be processed.
A reticulated electrode, an anode voltage applying means for applying an anode voltage to the reticulated electrode, and an anode voltage applying means disposed between the reticulated electrode and the object to be processed.
Film shape of the object to be processed among sputtered particles from the target
Through only those having a direction substantially perpendicular to the surface
A remeter and an amount of ions incident on the object to be processed into the collimator.
Ion incident amount control voltage mark to apply voltage for control
And a sputtering device. 7. Each of said collimators and / or
At least the surface of the reticulated electrode is the same as the target.
The material according to any one of claims 1 to 6, which is formed of the same material.
Sputtering equipment. 8. The method according to claim 7, wherein the core is located closer to the target.
The anode voltage applied to the remeter or the mesh electrode
Request to set to a value approximately equal to the voltage applied to the object
Item 8. The sputtering apparatus according to any one of Items 1 to 7. 9. The method according to claim 1, wherein the stiffener is disposed closer to the object.
Ion amount control voltage applied to a meter or the mesh electrode
To a relatively high or low value with respect to the anode voltage
Sputtering according to any one of claims 1 to 8, which is set.
Device.