JPS63247366A - Magnetron sputtering device - Google Patents

Abstract

PURPOSE:To improve the use efficiency and service life of a target and also to prevent deterioration in the characteristics and reproducibility of a film to be obtained, by turning an annular target above a magnetic couple and uniformly eroding the surface of a target. CONSTITUTION:This magnetron sputtering device is composed of a vacuum chamber 108, a vacuum pump 109, a gas-feed system 110, a magnetron-type cathode, a substrate 107, and an electric power source 111 and is also equipped with an annular target 105, a backing plate 104 fixing the above target 105, a cathode body 101, and a shield 112. The above-mentioned cathode body 101 is equipped with a magnetic couple 103 having a sectional form with a diameter equal to the width of the above target 105 and a yoke, and the target 105 and the magnetic couple 103 are relatively rotated so that central part of the width of the target 105 is passed above the magnetic couple 103. Moreover, the above- mentioned shield 112 has a circular opening, and plasma is produced only by using the target 105 at the position above the magnetic couple 103.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a magnetron sputtering apparatus.

BACKGROUND ART Conventionally, the cathode portion of a magnetron sputtering apparatus has had a structure as shown in FIG. 3, as shown in, for example, Japanese Patent Publication No. 19319/1983. An example of a conventional magnetron sputtering apparatus will be described below with reference to the drawings. In FIG. 3, 1 is the cathode body that fixes the magnet pair 3 and the yoke 2, 4 is the backing plate that fixes the target 5, and 6 is the magnet pair 3 and the target 6.
A cooling water pipe 7 is placed facing the target 5, and a substrate 1 on which a film is deposited by sputtering.
1 is a power supply for applying a voltage to the cathode body 1 and generating plasma on the surface of the target 6; 9 is a vacuum pump for evacuating the inside of the vacuum chamber 8; 1o is the inside of the vacuum chamber 8; This is a gas supply system for supplying Ar gas to.

The operation of the magnetron sputtering apparatus configured as described above will be described below.

First, the inside of the vacuum chamber 8 is pumped with a vacuum evacuation pump 9 such as a rotary pump, an oil diffusion pump, or a cryopump.
Evacuate to 0 Torr level. After that, gas supply system 1o
Ar gas was introduced into the vacuum chamber 8 by 5X
The degree of vacuum is set to about 10' Torr, and a DC or RF voltage is applied to the cathode body 1 by the power source 11. As a result, plasma is generated within the vacuum chamber 8. Therefore, Ar ions are generated. Also, due to the magnetic field 12 of the magnet pair 3, a region 13 with high plasma density is generated,
The amount of Ar ions colliding with the target 5 increases. Then, particles are mainly scattered from that part and deposited on the surface of the substrate 7 disposed opposite to each other to form a film. Thereafter, the target 5 is shaved as shown in FIG.

Problems to be Solved by the Invention However, with the above configuration, the amount of Ar ion collisions in the part of the target where the magnetic field strength is high, that is, the part with high plasma density is large, and the particles in that part are scattered a lot. Become. Therefore, erosion of the target concentrates in that part, and the amount of target actually used for sputtering, that is, the target utilization efficiency, decreases. For example, with conventional cathodes, only 30% of the target can be used, and in the case of mass production, there are problems such as an increase in the frequency of target replacement in terms of target utilization efficiency.

Furthermore, since the target erodes quickly, the shape of the target and the magnetic field strength change rapidly, resulting in a problem in that film characteristics and reproducibility deteriorate.

In view of the above-mentioned problems, the present invention aims to improve the efficiency of target use by sputtering, reduce the erosion rate of the target, and prevent the deterioration of film characteristics and reproducibility.

Means for Solving the Problems In order to solve the above problems, the magnetron sputtering apparatus of the present invention includes a ring-shaped target, a backing plate for fixing the ring-shaped target, and a backing plate having a diameter equivalent to the width of the ring-shaped target. A cathode body has a pair of magnets and a yoke having a cross-sectional shape, and is capable of relative rotation of the target so that the center of the width of the ring-shaped target passes over the pair of magnets; It has a circular opening that occurs only in the upper part of the target, and is equipped with a grounded shield surrounding the target surface.

Effect The effect of this technical means is as follows. That is,
A high-density area of plasma is created between the north and south poles of the magnet pair, and target particles fly out from that area, but because the ring-shaped target rotates at low or high speed above the magnet pair, In addition, the target is not partially eroded, and the surface of the ring-shaped target is eroded evenly, so the erosion rate of the target is reduced, and changes in target shape and magnetic field strength are slow. , it is possible to prevent a decrease in reproducibility and improve the life of the target. Furthermore, since the diameter of the magnet pair is equivalent to the width of the ring-shaped target, most of the target surface is used, improving target utilization efficiency.

EXAMPLE A magnetron sputtering apparatus according to an example of the present invention will be described below with reference to the drawings.

FIG. 1 shows a schematic cross-sectional view of a magnetron sputtering apparatus in an embodiment of the present invention. In FIG. 1, 1o1 indicates a ring-shaped target 106, a backing plate 104 for fixing it, and a ring-shaped target 106.
The target 106 has a magnet pair 103 and a yoke 102 having a cross-sectional shape with a diameter equivalent to the width of the target magnet 105, and the target 106 is rotated so that the center of the width of the ring-shaped target layer 105 passes over the magnet pair 103. 106 is the cathode body that makes it possible to
A cooling water pipe 112 for cooling the target 106 has a circular opening so that plasma is generated only in the upper part of the target 105 of the magnet pair 103.
A shield 1o7 that surrounds the surface and is grounded, 1o7 is a substrate that is placed facing the target 105 and on which a film is deposited by sputtering, and 111 is used to apply voltage to the cathode 101 and generate plasma on the surface of the target 105. 108 is a vacuum chamber capable of maintaining a vacuum state, 1
09 is a vacuum pump for evacuating the inside of the vacuum chamber 108, and 110 is a gas supply system for supplying gas into the vacuum chamber 108.

The operation of the magnetron sputtering apparatus configured as described above will be described below with reference to FIGS. 1 and 2.

First, inside the vacuum chamber 108, a rotary pump,
Vacuum pump 10 such as oil diffusion pump, cryopump, etc.
9! Evacuate to a vacuum level of +10-6 Torr. After that, Ar gas was introduced into the vacuum chamber 108 through the gas supply system 110, and 5×10-3T
Set the degree of vacuum to about orr. Next, the ring-shaped target 105 is rotated so that the center of the width of the target 106 passes over the fixed magnet pair 103.

Here, the magnet pair 103 and the ring-shaped target 106 are
It is cooled by cooling water from a cooling water pipe 106. Next, the cathode main body 101 is connected to a power source 111 with p, DC
Or apply RF voltage. As a result, plasma is generated within the vacuum chamber 108. At this time, plasma is generated only at the circular opening of the shield 112, that is, the target surface above the magnet pair 103, by the grounded shield 112 surrounding the ring-shaped target 106. Ar ions generated by the plasma collide with a high plasma density area due to the magnetic field of the magnet pair 103, and that area is mainly sputtered to form a film on the surface of the substrate 107 placed opposite the ring-shaped target 1o6. Ru.

As described above, according to this embodiment, since the ring-shaped target 105 rotates at low or high speed along the magnet pair 103 during film formation, the target surface is not partially eroded. eroded evenly. Since the diameter of the magnet pair 103 is equivalent to the width of the ring-shaped target 106,
Most of the target surface was used and the target utilization efficiency was over 60 inches. In addition, the erosion rate in the depth direction of the target was reduced, the change in magnetic field strength was slowed down, changes in film characteristics and deterioration in reproducibility could be delayed, and the life of the target could be improved.

According to this embodiment, the target magnet 105 rotates above the magnet pair 103, but it is also possible to rotate the magnet pair below the target. However, with this method,
Since the amount of eccentricity between the substrate and the magnet changes, there is a possibility of changes in film thickness uniformity, etc., so the reproducibility of the film is better in this example.

Effects of the Invention As described above, the present invention has a ring-shaped target, a backing plate for fixing the ring-shaped target, a pair of magnets and a yoke having a cross-sectional shape with a diameter equivalent to the width of the ring-shaped target, and A cathode body that allows the target to be rotated so that the center of the width of the ring-shaped target passes over the pair of magnets, and a circular opening that allows plasma to be generated only in the target portion above the pair of magnets. By providing a grounded shield surrounding the target surface, it is possible to improve target utilization efficiency and prevent deterioration of film characteristics and reproducibility.
Target life can also be improved.

[Brief explanation of drawings]

FIG. 1 is a schematic cross-sectional view of a magnetron sputtering device according to an embodiment of the present invention, FIG. 2 is a top view of the cand portion of FIG. 1, and FIG. 3 is a schematic cross-sectional view of a conventional magnetron sputtering device. be. 101...Cathode body, 102...Yoke, 103...Magnet pair, 104...Mark/Backing plate, 105...Target, 112
······shield. Name of agent: Patent attorney Toshio Nakao and one other personj0
3--Ichigori Ishi Daicho Figure 2 Figure 3

Claims (1)

[Claims] A vacuum chamber capable of maintaining a vacuum state, a vacuum pump for creating a reduced pressure atmosphere in the vacuum chamber, a gas supply system for supplying gas into the vacuum chamber, at least one magnetron type cathode, and at least one Chimo 1
In a magnetron sputtering device that has a substrate and a power source that applies voltage to the cathode, a ring-shaped target, a backing plate that fixes it, and a magnet that has a cross-sectional shape with a diameter equivalent to the width of the ring-shaped target are used. The cathode body has a pair of magnets and a yoke, and allows the target to be rotated relative to each other so that the center of the width of the ring-shaped target passes over the pair of magnets, and the plasma is directed to the target above the pair of magnets. A magnetron sputtering device characterized by having a circular opening so that sputtering occurs only in one part, and a grounded shield surrounding the target surface.