JPH03134169A - Sputtering device - Google Patents

Abstract

PURPOSE:To enlarge the erosion region of a target and to effectively utilize the target and also to enhance uniformity of the thin film of the target material on a base plate to be treated by rotating the target in a sputtering device and also rotating a magnet utilized as a magnetic force source in the rear of the target. CONSTITUTION:When the ions of Ar-based gas which are generated by plasma discharge are allowed to collide against a target 2 and sputtering particles are generated and the thin film of the target material is formed on the surface of the material 1 to be target material is formed on the surface of the material 1 to be treated such as a wafer in the vacuum vessel, the target 2 is fixed to a holding member 5 having water cooling jackets 15 and rotated by a shaft 23. Further a rotor 8 fitted with a magnet 10 utilized as a magnetic force source is rotated by the rotation of a motor 11 for rotating the magnet. Thereby a diffusion magnetic field is formed to the direction parallel to the direction of rotary transfer. The erosion region of the target 2 is diffused and uniformed. The utilization efficiency thereof is enhanced and also the uniformity of the sputtered film due to the target material on the wafer 1 is enhanced.

Description

[Detailed description of the invention] [Purpose of the invention] (Industrial application field) The present invention relates to a sputtering apparatus.

(Conventional Technique 1) A sputtering device is disclosed in Japanese Patent Application Laid-Open No. 59-87369. This is shown in FIG. 4(A).

As shown in (B), a target 102 is fixed to the outer surface of a magnet housing 100 to which cooling water is circulated and supplied, and a drive shaft 10 is rotatably provided on the magnet housing 100.
4, a multi-blade stirring wheel 106 and a magnet assembly 108 are fixed to the target 102, and the stirring wheel 104 is rotationally driven by the supplied cooling water, and the magnet assembly 10 is mounted on the back side of the target 102.
By rotating the target 8, a magnetic field is created over a wide range of surface area of the target 102, and the two lotion areas are expanded.

(Problems to be Solved by the Invention) In the above publication, the two lotion areas can be expanded by rotating the magnet assembly 108, but as another problem with this type of sputtering equipment, there is There was a demand for uniform film deposition, and there was room for further improvement.

Therefore, an object of the present invention is to expand the erosion area by rotating the magnetic source, and furthermore, by rotating the sputtering material body, it is possible to apply a sputtering film uniformly to the substrate to be processed. The goal is to provide equipment.

[Structure of the Invention] (Means for Solving the Problem) The present invention induces plasma between a substrate to be processed and a material to be sputtered, and sputters the material to be sputtered to form the substrate to be processed. A sputtering apparatus for forming a film, characterized in that the material to be sputtered is rotatably provided, and a magnetic source for confining plasma is rotated on the back side of the material to be sputtered.

(Function) When the magnetic force source used to confine plasma is driven to rotate on the back side of the sputtered material body, the second lotion area expands and the uniformity of sputtering is improved by forming a uniform magnetic field, but sputtered particles also fly out. By also rotationally driving the material to be sputtered, a uniform film can be applied to the sample, and the uniformity can be further improved.

(Example) Hereinafter, an example in which the present invention is applied to a sputtering apparatus will be specifically described with reference to the drawings.

FIG. 1 shows a magnetron type sputtering device as an example of a sputtering device.
A semiconductor wafer 1 and a target 2 as a material to be sputtered are placed facing each other. The semiconductor wafer 1 is supported by a sample stage 4 that includes a wafer heating mechanism 3.

The target 2 placed above the wafer 1 is
It is held by a holding member 5. The base material of this target 2 is selected depending on the material to be formed on the wafer 1, such as aluminum.

Silicon, tungsten, titanium, molybdenum.

It is made of chromium, cobalt, nickel, etc., or an alloy made of these materials, and in some cases, a material with poor thermal conductivity such as sintered metal is also used. Its shape may also be a stepped cross section, nine discs, one cone, a square plate, a pyramid, or the like. A negative DC voltage is applied to this target 2, which constitutes a cathode electrode.

Further above the holding member 5, a base 6 is provided to support the holding member 5 and to rotatably support a magnet 10, which will be described later. A hollow cylindrical portion 6a is formed in the center of the base 6. A bearing 7 is arranged around the cylindrical portion 6a, and a rotary disk 8 is rotatably supported by the bearing 7. The magnet 10 is fixed to an eccentric position of the rotating disk 8. On the other hand, a magnet rotation motor 11 is fixed to the upper surface of the base 6, and a first gear 12 is fixed to the output shaft of this motor 11. Further, a second gear 13 is fixed concentrically with the rotating disk 8, and the first gear 13 is fixed to the rotary disk 8 concentrically. The second gear 12.13 is adapted to mesh. As a result, by driving the magnet rotation motor 11, this rotational output becomes the first
Gear 12. It is transmitted to the rotating disk 8 via the second gear 13, and drives the magnet 10 to rotate. This magnet 10 becomes more uniform when a diffused magnetic field is formed in a direction parallel to the direction of rotational movement.

The holding member 5 holds the target 2 in a coolable manner,
Moreover, it acts as an electrode for applying a negative DC voltage to the target 2. For this purpose, a plurality of cooling jackets 15 are arranged on the holding member 5. By circulating a cooling medium, for example, cooling water, in this cooling jacket 15, the holding member 5 is cooled, and heat exchange between this holding member 5 and the target 2 suppresses the temperature rise of the target 2 when plasma is generated. It is supposed to be suppressed. Further, the holding member 5 is inserted into the cylindrical portion 6a of the base 6, and is screwed to one end of a support member 23 that is insulated and supported by the base 6, thereby applying voltage to the target 2. is possible.

An anode electrode 17 is provided around the target 2 with an insulator 16 interposed therebetween, and a shutter 18 is further provided to block the gap between the wafer 1 and the target 2 as necessary. The shutter 18 can be driven by a shutter drive mechanism 19.

The target 2 is formed in the shape of a stepped disc with -stages or multiple stages, for example - stages, and as shown in FIG. The small diameter portion 22 is formed in a protruding manner. In addition, the diameter of the peripheral portion 21a of the large diameter portion 21 is! , and the diameter of the peripheral portion 22a of the small diameter portion 22 is ! Set it to 2. On the other hand, the holding member 5 for rotatably holding the target 2 has a stepped hole shape.
a large-diameter hole 24 corresponding to the large-diameter portion 21 of the small-diameter portion 22;
It has a small diameter hole 25 corresponding to the diameter. In addition, large diameter hole 24
The diameter of the inner peripheral surface 24a of! .

The diameter of the inner circumferential surface 25a of the small diameter hole 25 is 14.

The sizes of the target 2 and the holding member 5 are determined so that the target 2 can be freely rotated! ,~1
The relationship between 4 is as follows.

! , <1. ,! , <14 The sputtering surface side of the target 2 has a central Taber surface 31 and a peripheral Taber surface 32 in consideration of the flight direction of the sputtered particles, and the center of the target 2 where the temperature rises rapidly The portion is clamped to the holding member 5. For example, as shown in FIG. 3, this clamp has a stepped hole 34 formed in the center of the target 2.
This is achieved by inserting the fastener 40 into the hole and connecting it to the screw hole 27 of the holding member 5. This stepped hole 34 has four parts 36
and a through hole 38 that penetrates from the bottom surface 36a to the back surface of the target 2. Further, the fastener 40 includes a hollow cylindrical spacer 42 and a bolt 44 that is inserted through the hollow cylindrical spacer 42 and screwed into the screw hole 27 of the holding member 5. and,
The spacer 42 has a flange 42a at a position that does not abut the bottom surface 36a.

Next, the effect will be explained.

Claims (1)

[Claims] (1) In a sputtering apparatus that induces plasma between a substrate to be processed and a material to be sputtered and sputters the material to be sputtered to form a film on the substrate to be processed, the material to be sputtered can be rotated. A sputtering apparatus characterized in that a magnetic force source for confining plasma is rotated on the back side of the material to be sputtered.