JP2710674B2 - Plasma processing apparatus and plasma processing method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Field of Industrial Application) The present invention relates to a plasma processing apparatus and a plasma processing method.

(Prior Art) In a plasma apparatus, for example, a sputtering apparatus, a sputtering gas is introduced into an airtight container, the gas is turned into plasma, and ions in the plasma collide with, for example, a negative voltage target which is a substrate to be processed, and a target material is discharged. The target material is sputtered and adheres to the surface of a sample such as a semiconductor wafer provided on the anode side to form a thin film.

As this type of apparatus, for example, a planar magnetron sputtering apparatus, as shown in JP-A-61-41767 and JP-A-61-41767, a magnet for sealing the plasma is arranged on the lower surface side of the target, While applying a magnetic field parallel to this target surface near the surface,
The high-density discharge plasma perpendicular to the magnetic field is concentrated on the target surface, and the generated plasma is efficiently contributed to the sputtering to perform high-speed sputtering.

However, in this case, it is difficult to uniformly distribute the magnetic field over the entire surface of the target, so that ions are concentrated only in a portion where the magnetic field largely acts, and that portion is intensively sputtered, so that the target cannot be used. There is a problem that efficiency is deteriorated.

On the other hand, in JP-A-59-67369, as shown in FIGS. 6A and 6B, a magnet housing 10 to which cooling water is circulated is supplied.
A target 102 is fixed to the outer surface of the magnet housing 100, and a multi-shaft stirring wheel 10 is mounted on a drive shaft 104 rotatably provided on the magnet housing 100.
6 and the magnet assembly 108 are fixed, the stirring wheel 104 is rotationally driven by the supplied cooling water, and the magnet assembly 108 is rotated on the back side of the target 102, so that the target 1
It describes that a magnetic field is formed in a wide surface area of 02 to enlarge an erosion area.

(Problems to be Solved by the Invention) However, the diameter of the plasma ring enclosed by the magnetic field of the magnet assembly 108 is limited to the diameter of the magnet assembly 108.
6, the outer shape of the magnet assembly 108 had to be considerably large as shown in FIG.

At this time, since the temperature of the target 102 is increased by the plasma heat and the sputter heat, cooling is generally performed to reduce the temperature to a predetermined temperature or less, and in order to use a magnet having a large diameter as described above, As shown in FIG. 6, the magnet has to be driven to rotate in the cooling medium circulated on the back side of the target 102.

Therefore, it is an object of the present invention to provide a plasma processing apparatus and a plasma processing method capable of expanding a parallel magnetic field region on a substrate to be processed while reducing a space occupied by a magnetic force source in a radial direction of rotation. It is in.

[Structure of the Invention] (Means for Solving the Problems) In a plasma processing apparatus according to the present invention, an electrode plate for plasma generation and a substrate to be processed are arranged inside a container, and the substrate to be processed is provided. In a device for forming a magnetic field near the processing surface and performing plasma processing by confining plasma, the magnetic force source confining the plasma and the magnetic force source are rotated along a rotation locus having a predetermined radius of rotation from the center of the electrode plate. And a rotation driving unit for driving, wherein the magnetic force source forms a magnetic line of force that extends inward and outward in the rotational radius direction.

According to a second aspect of the present invention, in the plasma processing apparatus according to the first aspect, the magnetic force source includes a magnetic body for fixing a magnet, and the magnetic body extends in a direction orthogonal to the rotation radius. It is characterized in that it has a track ring shape having a parallel axis and a curved axis connecting both ends of the parallel axis.

According to a third aspect of the present invention, in the plasma processing apparatus, the magnetic body is formed of low-carbon soft iron or magnetic stainless steel.

A plasma processing apparatus according to a fourth aspect of the present invention is the plasma processing apparatus according to the first aspect, further comprising a planar magnetron device in which a plurality of ring-shaped magnets are fixedly arranged, the plasma ring formed by the rotating magnetic force source. Is characterized in that a double plasma ring having a different radius can be formed on the electrode plate by forming another plasma ring having a different radius using the planar magnetron device.

According to a fifth aspect of the present invention, there is provided a plasma processing method comprising: disposing an electrode plate for plasma generation and a substrate to be processed in a container; forming a magnetic field near a processing surface of the substrate to be processed; In a plasma processing method for performing a plasma processing, the method further includes a step of rotating a magnetic force source along a rotation locus having a predetermined rotation radius from the center of the electrode plate, and forming a magnetic force line extending in and out of the rotation radial direction. And

(Function) According to each of the first to fifth aspects of the present invention, a magnetic field that expands in and out in the rotation direction of the magnetic force source is formed near the surface of the substrate to be processed while the outer shape of the magnetic force source is configured to be small. Therefore, the parallel magnetic field region on the substrate to be processed is enlarged, and for example, in a sputtering apparatus, the erosion area on the target can be enlarged.

In particular, in claim 2, since the magnetic body has a track ring shape, the magnetic force sources include a short axis between one and the other of the parallel axes, a long axis between one and the other of the curved axes,
Will be provided. And the short axis in the radial direction of rotation,
If the long axis is arranged in a direction perpendicular to the rotational radius direction, each magnet fixed to one and the other axis of the parallel axis,
Since the distance between the opposing surfaces is short, a repulsive magnetic field is generated, the magnetic field spreads over a region wider than the length of the short axis, and the magnetic field in the rotational radius direction can be expanded. Furthermore, by increasing the magnetic field in the direction orthogonal to the radius of rotation by the magnet fixed to the bending axis, the strength of the magnetic field in the direction of the radius of rotation and the direction orthogonal thereto can be made substantially the same, and the efficiency can be improved. The realization of good sputtering and the effective use of the sputtering material can be achieved.

In particular, in the fourth aspect, it is possible to further enlarge the erosion area and uniformize the consumption of the target.

(Example) Hereinafter, an example of a sputtering apparatus to which the present invention is applied will be specifically described with reference to the drawings.

FIG. 1 shows a magnetron type sputtering apparatus as an example of a sputtering apparatus. In a vacuum vessel (not shown), a semiconductor wafer 1 and a target 2 are arranged facing each other, for example, in parallel. The semiconductor wafer 1 is supported on a sample table 4 having a built-in wafer heating mechanism 3. In this embodiment, the target 2 is processed by the plasma.
It is. That is, the target substrate is the target 2.

Above the wafer 1, the target 2 is supported by a holding member 5. The target 2 is a wafer 1
The base material is selected according to the material to be sputtered on. For example, aluminum, silicon, tungsten,
Titanium, molybdenum, chromium, cobalt, nickel, etc.
Alternatively, a material having poor thermal conductivity such as a sintered metal is used in some cases.
The target 2 is configured such that, for example, a negative DC voltage is applied to the sample stage 4 to form a cathode electrode.

Above the holding member 5, there is provided a base 6 for supporting the holding member 5 and rotatably supporting a magnet 10 as a magnetic force source described later. A hollow cylindrical portion 6 a is formed at the center of the base 6, and the lowermost end thereof is in contact with the holding member 5. A bearing 7 is arranged around the cylindrical portion 6a,
The rotating arm 8 is rotatably supported by the bearing 7. The magnet 10 is fixed to a free end position of the rotating arm 8. On the other hand, a magnet rotation motor 11 is fixed to the upper surface of the base 6, and a first gear 12 is fixed to an output shaft of the motor 11. Further, a second gear 13 is fixed to the rotating arm 8 coaxially with the rotating arm 8, and the first and second gears 12 and 13 mesh with each other. As a result, by driving the motor 11 for rotating the magnet, the rotation output is reduced to the first gear 1.
2, transmitted to the rotary arm 8 via the second gear 13,
The magnet 10 can be driven to rotate.
The details of the magnet 10 will be described later.

The holding member 5 holds the target 2 so as to be able to cool. For this purpose, a plurality of cooling jackets 15 are arranged inside the holding member 5. The holding member 5 is cooled by circulating a cooling medium, for example, cooling water, in the cooling jacket 15, and heat exchange between the holding member 5 and the target 2 raises the temperature of the target 2 during plasma generation. It is designed to suppress.

An anode electrode 17 is provided around the target 2 via an insulator 16, and a shutter 18 is provided so that the space between the wafer 1 and the target 2 can be shut off if necessary. The shutter 18 can be driven by a shutter drive mechanism 19.

The target 2 is formed in a stepped disk shape as shown in FIG. 3, and has a large diameter portion 21 having a sputtering surface.
And a small-diameter portion 22 protruding at the center of the rear surface side of the large-diameter portion 21. The peripheral portion of the large diameter portion 21
The 21a diameter and l _1, the diameter of the peripheral portion 22a of the small diameter portion 22 and l _2. On the other hand, the holding member 5 for holding the target 2 has a stepped hole shape, and has a large-diameter hole 24 corresponding to the large-diameter portion 21 of the target 2 and a small-diameter hole 25 corresponding to the small-diameter portion 22. And The inner peripheral surface 24a of the large-diameter hole 24
The diameter and l _3, the diameter of the inner circumferential surface 25a of the small-diameter hole 25 and l _4. As for the sizes of the target 2 and the holding member 5, at room temperature, the relationship of l ₁ to l ₄ is as follows.

l ₁ <l ₃ , l ₂ <l ₄ Here, the diametric gap between the large diameter portion 21 and the large diameter hole 24 and the diametric gap between the small diameter portion 22 and the small diameter hole 22 are as follows, respectively. Is set to

That is, since the target 2 thermally expands due to the temperature rise during plasma generation, the diametrical thermal expansion length of the large-diameter portion 21 is substantially the same as the diametric gap between the large-diameter portion 21 and the large-diameter hole 24. It has become. Similarly, the thermal expansion length of the small-diameter portion 22 due to the thermal expansion of the target 2 depends on the small-diameter portion 22 and the small-diameter hole 2.
It is almost the same as the diametric gap of 5. Therefore, the thermal expansion of the target 2 causes the peripheral portion 21 of the large-diameter portion 21 to expand.
The a and the peripheral portion 22a of the small-diameter portion 22 expand, respectively, and come into close contact with the inner peripheral surfaces 24a and 25a of the large-diameter hole 24 and the small-diameter hole 25 with substantially the same degree of sealing. At the same temperature, since the expansion lengths of the large diameter portion 21 and the small diameter portion 22 are different, these peripheral portions 21a, 21b and the inner peripheral surfaces 24a, 25a of the holes facing the peripheral portions 21a, 21b. The gap distance between them is different. Thus, the peripheral portions 21a, 22a of each stage of the target 2
As a result, the target 2 can be efficiently cooled by ensuring close contact with the inner peripheral surfaces 24a and 25a of the holding member 5 facing each other.

Further, the clamp between the target 2 and the holding member 5 is performed on the rear surface side of the central portion of the target. That is,
Locking pins 23, 23 projecting outward in the diametric direction are formed on the peripheral edge 22a of the small-diameter portion 22 of the target 2 at opposing positions. On the other hand, on the bottom surface 24b of the large-diameter hole 24 of the holding member 5, insertion slits 26, 26 having a predetermined depth capable of inserting the locking pins 23, 23 through communicating with opposing positions of the small-diameter hole 25. Are provided, and have locking grooves 27, 27 which communicate with the lower ends of the insertion slits 26, 26 and are formed of lateral grooves extending in the same rotation direction. As a result, the small diameter portion 22 of the target 2 is inserted into the small diameter hole 25 of the holding member 5 so that the locking pins 23, 23 are inserted into the insertion slits 26,
26, the target 2 is rotated by a predetermined angle in a direction in which the rotation is allowed, so that the locking pins 23, 23 are locked in the locking grooves 27, 27
At the end of the

Such a clamp mechanically clamps the central region where the temperature rise of the target 2 is likely to cause a significant warpage, thereby ensuring the adhesion between the back surface of the target 2 and the holding member 5 and increasing the cooling efficiency. ing. Further, the clamp enables one-touch replacement, and furthermore, since the clamp member is not exposed on the surface of the target 2, the entire surface of the target 2 can be effectively used as an erosion area.

Next, the configuration of the magnet 10 will be described with reference to FIG.

The magnet 10 forms a magnetic field extending inward and outward in the vicinity of the target 2. The outer shape of the magnetic body 10a as a yoke has a track ring shape in which both ends of a parallel axis are connected by a curved axis. The direction of the radius of rotation, which is the direction in which the rotating arm 8 extends, is the short axis. The magnetic body 10a is preferably made of low carbon soft iron or magnetic stainless steel. Then, three permanent magnets (for example, ferrite) magnetized in the thickness direction are laminated along the short axis direction, and two sets of the magnet elements 40, which are the three permanent magnets, constitute one set. Groups 42 are spaced apart by a relatively small distance. On the other hand, two permanent magnets magnetized in the thickness direction so as to form a magnetic field smaller than the magnet element group 42 are provided in the longitudinal direction of the track ring shape. Two magnet element groups 46 each including one element 44 are arranged at a relatively long distance from each other, and the magnet 10 is configured.

In the magnetic stations of the magnet elements 40 and 44, the inside of each set has an N pole and the outside has an S pole. The rotation speed of the magnet 10 can be selected according to the value of the sputtered film, and is rotated at a speed of, for example, 10 to 50 rpm. If the rotation speed is lower than 10 rpm, the uniformity of the magnetic field, that is, the uniformity of the consumption of the sputter material is deteriorated. If the rotation speed is higher than 50 rpm, a vortex is generated in the target 2.

The magnetic field lines of the magnetic source configured as described above are characterized by exhibiting a magnetic field distribution that spreads in the direction of the radius of rotation. In other words, it is to form a magnetic field line distribution that diffuses in a direction perpendicular to the moving direction of the magnetic force source.

 Next, the operation will be described.

In order to perform sputtering with this sputtering device,
While supporting the wafer 1 and the target 2 respectively,
The degree of vacuum in a vacuum vessel (not shown) in which these are arranged is roughly reduced to, for example, 10 ^-1 to 10 ^-3 Torr. Next, the degree of vacuum in the vacuum vessel was evacuated to a high vacuum of 10 ⁻⁵ to 10 ⁻⁸ Torr,
After that, a sputtering gas such as Ar
Gas is introduced, and the inside of the vacuum vessel is set to a level of 10 ^-2 to 10 ^-3 Torr. Here, when a negative voltage is applied to the target 2, plasma is formed on the sputtering surface side of the target 2, and a magnet is formed on the back surface side of the target 2.
The plasma ring 30 in which this plasma is confined by a magnetic field can be formed by rotating the 10. Due to the formation of the plasma ring 30, the ionization rate is improved, and sputtering is performed in a predetermined erosion area on the sputtering surface of the target 2.

In the present embodiment, the erosion area can be further enlarged while the outer shape of the magnet 10 is reduced. That is, the erosion area is formed by the plasma ring formed on the target 2.
There is a close relationship with the diameter of 30 and it is possible to enlarge the erosion area by increasing the diameter of the plasma ring.

Here, the magnetic field generated by the magnet 10 for forming the plasma ring 30 will be considered.

First, magnetic lines of force in the section taken along the line BB in FIG. 2 will be described. As shown in FIG. 5, the magnetic flux lines are directed toward the outer S pole from the inner N pole in the longitudinal axis direction of the elliptical magnet 10. In FIG. 2, the distance between the opposing magnet element groups 46 in FIG. 2 is long, so that there is little influence on the lines of magnetic force. Therefore, the plasma ring 30 generated in a region of the magnetic field lines parallel to the target 2 is formed.
Are formed at the center position of a set of magnet element groups 46.

On the other hand, considering the lines of magnetic force in the cross section AA shown in FIG. 2, it is formed as shown in FIG. In other words, the magnetic field lines are similarly formed so as to extend toward the south pole outside the inner north pole in the elliptical short axis direction, but the north poles of the facing inner magnet elements 40, 40 are close to each other. Therefore, a repulsive magnetic field is formed here, and as shown in FIG. 4, the magnet 10 is distorted so as to expand outside (inside and outside in the direction of the radius of rotation). That is, the magnetic line of magnetic force on the inner side has a small porosity and the magnetic porosity of the magnetic line on the outside has a higher magnetic porosity. become.

As described above, even if the width of the magnet 10 in the rotational radius direction that is the axial direction of the rotating arm 8 (that is, the width in the short-side direction of the ellipse) is small, the diameter of the magnet ring 30 in this direction is changed by the longitudinal axis. The diameter of the magnet ring 30 can be formed on the target 2 so as to be close to the diameter.

In particular, the expansion of the magnet ring 30 in the radial direction of the target 2 is larger than the width of the magnet 10 in that direction, and the occupation space of the magnet 10 in that direction is narrowed, but a sufficient erosion area is secured. Can be.

As a result, the space occupied by the magnet 10 in the radial direction of rotation can be reduced.As a result, in particular, by reducing the rotation locus area of the magnetic body 10a to a track ring shape,
Thus, the space on the back surface side of the target 2 obtained can be effectively used. That is, in order to effectively cool the peripheral portions 21a and 22a of the target 2 as described above, the cooling jacket 15 built in the holding member 5 is provided as shown in FIG. What is necessary is just to arrange | position only in the position located in the part back surface side, and the position corresponding to the peripheral part of the target 2. FIG. However, in the conventional configuration, the space for disposing such a cold water jacket 15 is occupied by the rotating region of the magnet. In the present embodiment, since the magnet 10 can be configured to be small in the radius direction of rotation, the cold water jacket 15 can be disposed without hindering the rotation of the magnet 10.

Further, in this embodiment, since only the cooling jacket 15 needs to be disposed inside the holding member 5, the magnet 10 close to the back surface of the target 2 and the structure for rotationally driving the magnet 10 are exposed to the atmosphere. Therefore, unlike a conventional case where a magnet is rotated in a cooling medium, the reliability can be improved without corrosion due to cooling water or the like.

The present invention is not limited to the above embodiment,
Various modifications can be made within the scope of the present invention.

For example, in the above embodiment, the magnet element groups 42 and 46 are arranged on two axes orthogonal to each other, but may be arranged in other directions, and the magnet 10 may be formed by forming a repulsive magnetic field as described above. It is also possible to adopt a configuration in which the lines of magnetic force swelling beyond the width of are formed in directions other than the rotational radius direction. In addition, the method of forming such a distorted magnetic field is not limited to the method of disposing the same pole in close proximity,
Various other configurations such as formation by another external magnetic field can be adopted.

Next, a configuration for securing almost the entire movement trajectory of the plasma ring 30 on the target 2 as an erosion area will be described.

Here, the contribution of the magnet element groups 42, 42 of the magnet 10 in the radial direction of rotation and the magnet element groups 44, 46 in the direction orthogonal to this to the spatter will be considered.

As shown in FIG. 8 (A), the angular areas of the magnetic field at the moment of rotation of the magnet element groups 42, 42 arranged along the rotational radius direction are regions S ₁ , S ₂ in FIG. This area is reflected on the erosion area on the target 2. On the other hand, the angular area of the magnetic field at the moment of rotation of the magnet element groups 44 and 46 arranged along the direction orthogonal to the rotational radius direction is the areas S ₃ and S ₄ in FIG. Therefore, the area becomes narrower than the areas S ₁ and S ₂ .

Therefore, as shown in FIG. 8 (B), the erosion at the two locations S ₁ ′ and S ₂ ′ corresponding to the regions S ₁ and S ₂ as the erosion area on the target 2 becomes particularly remarkable, and the erosion area becomes effective. Could not secure. Conventionally, without paying attention to the above point, the magnet element groups 44 and 46 perpendicular to the rotational radius direction only need to have a function of bending electrons in order to simply form a closed loop plasma ring on the ring. Was considered. Therefore, it has been considered to arrange the magnet arrangement near the R shape of the magnet 10 as shown in FIG.

In order to enlarge the erosion area on the target 2 corresponding to the plasma ring 30, it is necessary to strengthen the magnetic field in the magnet element groups 44, 46 in a direction orthogonal to the rotational radius direction. Considering that the magnetic field passes through the same path on the target 2 twice, the sum of the magnetic field angular areas S ₃ and S ₄ is the angular area S ₁ or S ₂ of the magnetic field in the magnet element group 42. It is sufficient if it is equal to or more than. In order to make the entire area corresponding to the plasma ring 30 as an effective erosion area, the present inventor is more perpendicular to this direction than the strength of the magnetic field of the magnet element groups 42, 42 arranged along the rotational radius direction. Magnet element group 44, 46 arranged along the direction
Experiments have confirmed that this can be dealt with by setting the strength of the magnetic field to be equal or higher.

For this reason, as shown in FIG. 7 (A), when the same shape and the same number of magnets are arranged at various places, the elements constituting the respective magnet element groups 42, 42, 44, 46 If the magnetic permeability μ is made of the same material, the intensity of the magnetic field of the element group in the direction of the radius of rotation at the moment of rotation and the direction perpendicular thereto can be made substantially the same.

Alternatively, the magnetic permeability μ of the magnet element groups 44 and 46
If the height is set higher, the strength of the magnetic field by the magnet element groups 44 and 46 can be made larger than that of the others.

Even when the magnetic permeability μ is the same, it can be set similarly by changing the shape and the number of the magnets.

In this case, the erosion area S on the target 2 corresponding to the plasma ring 30 can be enlarged as shown in FIG. 7B, so that efficient sputtering can be realized and the sputter material can be effectively used. .

Next, with reference to FIG. 10, the configuration and operation of an apparatus capable of forming a double plasma ring will be described. As shown in FIG. 1A, a planar magnetron device 50 is disposed below the backing plate 60 to which the target 2 is fixed and inside the magnet 10 which is driven to rotate. In this device 50, an annular magnet, for example, a coil 54 is arranged in a groove of a yoke 52 having a central magnetic pole 52a and a ring-shaped outer magnetic pole 52b. By energizing the coil 54, lines of magnetic force are formed from the central magnetic pole 52a to the outer magnetic pole 52b, and a small-diameter plasma ring 56 parallel to the target 2 can be formed (see FIGS. 2B and 2C). On the other hand, by rotating the magnet 10, a large-diameter plasma ring 32 connecting the plasma rings 30 at each rotation position can be formed.

By forming the double plasma rings 32 and 56 in this way, it is possible to further enlarge the erosion region and to make the target consumption uniform, and as shown in FIG. 62, it is consumed while forming the large circular groove 64. Also, for the intermediate region 66, each groove
It is preferable to set the depth to be half of the depth of 62,62. Note that the planar magnetron device 50 may be arranged outside the rotating magnet 10, and the number of magnetic poles can be increased to three or more if space permits.

In the above embodiment, an example in which the present invention is applied to a sputtering apparatus has been described. However, the present invention can be applied to any apparatus capable of confining plasma and performing plasma processing on a substrate to be processed.

[Effects of the Invention] According to each of the first to fifth aspects of the present invention, a parallel magnetic field region formed by being enclosed by a magnetic force source while reducing the outer shape of the magnetic force source that forms the magnetic field lines that are driven to rotate and diffuse. Can be larger than the width of the magnetic source in that direction,
It is possible to expand the parallel magnetic field region on the substrate to be processed while reducing the rotation occupation space of the magnetic force source.

In particular, in the case of the second aspect, because of the track ring shape, the strength of the magnetic field in the direction of the radius of rotation and the direction orthogonal thereto can be made substantially the same, realizing efficient sputtering and effective use of the sputtering material. Can be planned.

In particular, in the fourth aspect, it is possible to further enlarge the erosion area and uniformize the consumption of the target.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view showing an example of a sputtering apparatus to which the present invention is applied, FIG. 2 is a plan view of a magnet, and FIG. 3 is a schematic perspective view for explaining a mounting structure of a target and a holding member. FIG. 4 is a schematic explanatory view showing magnetic force lines in a cross section AA shown in FIG. 2, FIG. 5 is a schematic explanatory view showing magnetic force lines in a cross section BB in FIG. 2, FIG. FIGS. 7A and 7B are schematic illustrations for explaining a conventional rotating magnet, and FIGS. 7A and 7B are configurations for enlarging an erosion area in a region corresponding to a plasma ring. FIGS. 8 (A) and (B) are schematic explanatory views for explaining an action in which an erosion area on a target corresponding to a plasma ring is concentrated at two places. Figure 9 illustrates an unfavorable example of magnet arrangement Schematic illustration of order, FIG. 10 (A), (B), (C) is a schematic sectional view of a sputtering apparatus features a planar magnetron device each,
FIG. 3 is a plan view of a double plasma ring formed by the above process, and a cross-sectional view for explaining consumption of sputtering. 1 ... sample, 2 ... target, 10 ... magnet, 4
0,44 ... Magnet element, 42,46 ... Magnet element group, 30,32,56 ... Plasma ring.

Claims (5)

(57) [Claims] 1. An apparatus for arranging an electrode plate for plasma generation and a substrate to be processed inside a vessel, forming a magnetic field near a processing surface of the substrate to be processed, and confining the plasma to perform a plasma processing, wherein: A magnetic force source to be confined, and a rotation driving unit that rotationally drives the magnetic force source along a rotation trajectory having a predetermined rotation radius from the center of the electrode plate. A plasma processing apparatus for forming an expanding magnetic field line. 2. The magnetic power source according to claim 1, wherein the magnetic force source has a magnetic body for fixing a magnet, and the magnetic body includes two parallel axes extending in a direction orthogonal to the radius of rotation. A plasma processing apparatus having a track ring shape having a curved axis connecting both ends of the axis. 3. The plasma processing apparatus according to claim 2, wherein said magnetic material is formed of low-carbon soft iron or magnetic stainless steel. 4. The plasma ring according to claim 1, further comprising a planar magnetron device having a plurality of ring-shaped magnets fixedly disposed therein, wherein another plasma ring having a different radius from a plasma ring formed by the rotating magnetic force source is provided. A plasma processing apparatus formed by the above-mentioned planar magnetron device and capable of forming double plasma rings having different radii on the electrode plate. 5. A plasma processing method comprising: disposing an electrode plate for plasma generation and a substrate to be processed inside a container; forming a magnetic field near a processing surface of the substrate to be processed; and performing plasma processing by confining plasma. A plasma processing method comprising: rotating the magnetic force source along a rotation locus having a predetermined rotation radius from the center of the electrode plate, and forming magnetic force lines extending in and out in the rotation radius direction.