TWI839503B - Sputtering apparatus, thin-film forming method - Google Patents

Abstract

The sputtering target (14) is uniformly sputtered. The sputtering target (14) is arranged on one surface of the cathode electrode (21), and a plurality of magnet devices (30 ₁ , 31 ₁ to 31 ₄ , 30 ₂ ) are arranged in parallel on the surface of the opposite side. A variable magnet (47) having a magnetic field is arranged at both ends of the magnet device (30 ₁ , 31 ₁ ~ 31 ₄ , 30 ₂ ). The magnetic field is a magnetic field formed by a synthetic base magnetic force portion (71) and an electromagnetic portion (73). The polarity and magnetic field strength of the magnetic pole formed in the electromagnetic portion (73) are controlled by controlling the direction and magnitude of the exciting current flowing to the electromagnetic portion (73). According to the increase of the film-forming object (13) to be sputtered, the magnetic field strength formed by the variable magnet (47) is reduced to make the magnetic field strength on the sputtering surface (24) constant.

Description

Sputtering device, thin film manufacturing method

The present invention relates to a sputtering device and a thin film manufacturing method.

The magnetron sputtering method is a device that forms a magnetic field on the surface of the sputtering target, causing electrons to move in the magnetic field, and efficiently converts the sputtering gas into plasma. It is widely used in the formation of thin films.

Reference numeral 130 in FIGS. 8( a ) and 8 ( b ) denotes a target device used in a magnetron sputtering device, wherein a sputtering target 114 is disposed on one surface of a cathode electrode 121 , and a plurality of magnet devices 131 are disposed on the opposite surface.

Each magnet device 131 has an annular outer magnet 136 and a linear inner magnet 134 arranged in an area surrounded by the outer magnet 136. Among the two magnetic poles of the outer magnet 136 of each magnet device 131, the magnetic poles with the same polarity will face the cathode electrode 121, and among the two magnetic poles of the inner magnet 134, the magnetic pole with the opposite polarity to the magnetic pole of the outer magnet 136 facing the cathode electrode 121 will face the cathode electrode 121.

A sputtering voltage is applied to the cathode electrode 121 , and electrons emitted from the surface of the sputtering target 114 are captured by the magnetic field formed on the surface of the sputtering target 114 by the outer magnet 136 and the inner magnet 134 , forming a high-density plasma of the sputtering gas on the surface of the sputtering target 114 , sputtering the surface of the sputtering target 114 .

The place where plasma is formed at a high density is the upper area between the outer magnet 136 and the inner magnet 134. In order to expand the surface of the sputtering target 114, the moving plate 145 provided with each magnet device 131 is moved in a direction perpendicular to the length direction of the magnet device 131, and the high-density plasma will move on the surface of the sputtering target 114.

However, the magnetic field strength is likely to be strong at the positions of both ends of the magnet device 131, and the plasma formed at these locations is particularly high density, so that the sputtering target 114 is sputtered in large quantities.

Furthermore, if the depth of the erosion formed on the target at both ends of the magnet device 131 is deeper than that in other areas, the distance between the surface of the sputtering target 114 and the magnet device 131 will be shorter than that in other places, and the sputtering target 114 will be sputtered more. [Prior technical literature] [Patent literature]

[Patent Document 1] Japanese Patent Publication No. 5-214527 [Patent Document 2] Japanese Patent Publication No. 8-81769 [Patent Document 3] Japanese Patent Publication No. 2012-241250 [Patent Document 4] Japanese Patent Publication No. 2004-115841 [Patent Document 5] Japanese Patent Publication No. 2015-1734 [Patent Document 6] KR101885123 [Patent Document 7] KR101924143

(The problem that the invention is trying to solve)

This invention is created to solve the above-mentioned problems of the previous technology. The magnetic field strength of the variable magnet, which is a combination of permanent magnet and electromagnetic magnet, is reduced so that the magnetic field strength on the sputtering surface does not change, so that it can be evenly sputtered on the sputtering surface. (Means for solving the problem)

The present invention developed to achieve the above-mentioned purpose is a sputtering device having a target device, which is provided with: a cathode electrode; a sputtering target, which is arranged on one side of the cathode electrode, and the sputtering surface exposed in the vacuum tank will be sputtered; and a magnet device, which is arranged on the surface of the cathode electrode opposite to the one side, and forms a magnetic field on the sputtering surface. If the sputtering target is sputtered, a thin film is formed on the film forming surface of the film forming object located in the vacuum tank. The magnet device , is thin and long and has a length direction, and variable magnetic parts are respectively arranged at both ends of the aforementioned length direction, and a fixed magnetic part is arranged between the aforementioned variable magnetic parts. The aforementioned fixed magnetic part has: a first and a second central outer part formed by thin and long permanent magnets arranged along the aforementioned length direction; and a central inner part formed by thin and long permanent magnets arranged between the aforementioned first and second central outer parts along the aforementioned length direction. The aforementioned variable magnetic part has: The first and second end outer parts are formed by a thin and long permanent magnet; the end inner part is formed by a plurality of variable magnets arranged between the first and second end outer parts along the aforementioned length direction; and the connecting part is formed by the thin and long and curved permanent magnets connecting the ends of the first and second end outer parts at both ends of the aforementioned length direction of the aforementioned magnet device. If the magnetic pole of the polarity of either N pole or S pole is set as the first pole and the magnetic pole of the polarity of the other pole is set as the second pole, then the first and second center outer parts are The side, the first and second end outer parts, and the connecting part are such that the magnetic pole of the first pole will face the cathode electrode. The central inner part and the end inner part are such that the magnetic pole of the second pole will face the cathode electrode. The variable magnet has: a core part, and a coil wound around the core part. If the excitation current flows, the electromagnetic part forms a magnetic field. The direction and strength of the magnetic field formed by the variable magnet are configured to be variable according to the direction and magnitude of the flow of the excitation current. In the sputtering device of the present invention, the magnetic core of at least one of the variable magnets has a base magnetic portion formed by a permanent magnet, and the strength of the magnetic field formed by the variable magnet is the strength of the magnetic field formed by synthesizing the magnetic field of the base magnetic portion and the magnetic field of the electromagnetic portion. In the sputtering device of the present invention, the magnetic pole of the first pole of the base magnetic portion faces the cathode electrode. In the sputtering device of the present invention, the magnetic pole of the second pole of the base magnetic portion faces the cathode electrode. In the sputtering device of the present invention, the strength of the magnetic field formed by the variable magnet can be changed during the period when the sputtering target is sputtered. In the sputtering device of the present invention, the sputtering target and the magnet device are configured to reciprocate relative to each other. In the sputtering device of the present invention, the target device has: One cathode electrode; The sputtering target disposed on one cathode electrode; and A plurality of magnet devices disposed parallel to each other. The present invention is a sputtering device having a plurality of magnet devices, wherein the plurality of magnet devices are disposed parallel to each other and arranged in a row, and Among the arranged magnet devices, the number of variable magnets of the magnet devices at both ends is greater than the number of variable magnets of the magnet devices at other positions. The present invention is a sputtering device having a plurality of target devices. In the sputtering device of the present invention, the target device comprises: The cathode electrode formed into a cylindrical shape; The cylindrical sputtering target arranged on the outer periphery of the cathode electrode; and The magnet device arranged in the area surrounded by the cathode electrode. In the sputtering device of the present invention, the variable magnet is arranged in a box, and a cooling medium flows in a cooling medium path provided in the box to cool the variable magnet. The present invention is a thin film manufacturing method, which is a thin film manufacturing method for controlling a sputtering device to form a thin film on a film-forming object. The sputtering device has a target device, which is provided with: a cathode electrode; a sputtering target, which is arranged on one side of the cathode electrode, and the sputtering surface exposed in the vacuum tank will be sputtered; and a magnet device, which is arranged on the surface of the cathode electrode on the opposite side of the surface, and forms a magnetic field on the sputtering surface. If the sputtering target is sputtered, a thin film is formed on the film-forming surface of the film-forming object located in the vacuum tank. The aforementioned magnet device is thin and long and has a length direction. The variable magnetic force parts are respectively arranged at both ends of the aforementioned length direction, and the fixed magnetic force part is arranged between the aforementioned variable magnetic force parts. The aforementioned fixed magnetic force part has: the first and second central outer parts formed by the thin and long permanent magnets arranged along the aforementioned length direction; and the central inner part formed by the thin and long permanent magnets arranged between the first and second central outer parts along the aforementioned length direction. The aforementioned variable magnetic force part has: the thin and long permanent magnets arranged along the aforementioned length direction. The first and second end outer parts; The end inner parts formed by a plurality of variable magnets arranged between the first and second end outer parts along the aforementioned length direction; and The connecting parts formed by the elongated and curved permanent magnets connecting the ends of the first and second end outer parts at both ends of the aforementioned length direction of the aforementioned magnet device, If the magnetic pole of the polarity of either N pole or S pole is set as the first pole and the magnetic pole of the polarity of the other pole is set as the second pole, then the first and second central outer parts, the first and second end outer parts, and the connecting parts are the aforementioned first and second central outer parts. The magnetic pole of one pole will face the cathode electrode, The magnetic pole of the central inner part and the end inner part is the second pole and will face the cathode electrode, The variable magnet has: a core part, and a coil wound around the core part, and if the excitation current flows, the electromagnetic magnet part forms a magnetic field, The direction and strength of the magnetic field formed by the variable magnet are configured to be variable according to the direction and magnitude of the flow of the excitation current, If the number of the film-forming objects forming the thin film increases, the strength of the magnetic field formed by the variable magnet is reduced. The present invention is a thin film manufacturing method, which is a thin film manufacturing method for controlling a sputtering device to form a thin film on a film-forming object. The sputtering device has a target device, which is provided with: a cathode electrode; a sputtering target, which is arranged on one side of the cathode electrode, and the sputtering surface exposed in the vacuum tank will be sputtered; and a magnet device, which is arranged on the surface of the cathode electrode on the opposite side of the surface, and forms a magnetic field on the sputtering surface. If the sputtering target is sputtered, a thin film is formed on the film-forming surface of the film-forming object located in the vacuum tank. The aforementioned magnet device is thin and long and has a length direction. The variable magnetic force parts are respectively arranged at both ends of the aforementioned length direction, and the fixed magnetic force part is arranged between the aforementioned variable magnetic force parts. The aforementioned fixed magnetic force part has: the first and second central outer parts formed by the thin and long permanent magnets arranged along the aforementioned length direction; and the central inner part formed by the thin and long permanent magnets arranged between the first and second central outer parts along the aforementioned length direction. The aforementioned variable magnetic force part has: the thin and long permanent magnets arranged along the aforementioned length direction. The first and second end outer parts; The end inner parts formed by a plurality of variable magnets arranged between the first and second end outer parts along the aforementioned length direction; and The connecting parts formed by the thin and curved permanent magnets located at both ends of the aforementioned length direction of the aforementioned magnet device, connecting the ends of the aforementioned first and second end outer parts. Among the N pole and the S pole, if the magnetic pole of the polarity of either side is set as the first pole and the magnetic pole of the polarity of the other side is set as the second pole, then the aforementioned first and second central outer parts, the aforementioned first and second end outer parts, and the aforementioned connecting parts are the aforementioned first and second central outer parts. The magnetic pole of one pole will face the cathode electrode, The magnetic pole of the central inner part and the end inner part is the second pole and faces the cathode electrode, The variable magnet has: a core part, and a coil wound around the core part, and if the excitation current flows, the electromagnetic magnet part forms a magnetic field, The direction and strength of the magnetic field formed by the variable magnet are configured to be variable according to the direction and magnitude of the flow of the excitation current, If the number of the film-forming objects forming the thin film increases, the strength of the magnetic field formed by the variable magnet increases. The present invention is a method for manufacturing a thin film, which utilizes a target device, and the target device is provided with: a cathode electrode; a sputtering target, which is arranged on one side of the cathode electrode, and the sputtering surface exposed in the vacuum chamber will be sputtered; and a plurality of elongated magnet devices, which are arranged on the surface of the cathode electrode opposite to the one side, and form a magnetic field on the sputtering surface, sputter the sputtering target, and sputter the film forming object in the vacuum chamber. A film is formed on the film-forming surface of the object. At both ends of each of the aforementioned magnetic devices, a variable magnet is arranged. The variable magnet has a permanent magnet and an electromagnetic magnet, and forms a magnetic field that synthesizes the magnetic field formed by the aforementioned permanent magnet and the magnetic field formed by the aforementioned electromagnetic magnet when the excitation current flows. Control the direction and magnitude of the aforementioned excitation current flowing to the aforementioned electromagnetic magnet, and reduce the magnetic field intensity formed by the aforementioned variable magnet according to the increase in the number of sheets of the aforementioned film-forming object forming the aforementioned film. [Effect of the invention]

The difference in the sputtering amount at each location within the film formation surface of the sputtering target or each target becomes smaller.

When the variable magnet has an electromagnetic part and a base magnetic part, sputtering can continue even when the exciting current does not flow to the electromagnetic part.

<Sputtering device> Referring to Fig. 1 and Fig. 2, reference numeral 2 in Fig. 1 represents the sputtering device of the present invention.

The sputtering device 2 includes a vacuum chamber 25 and a target device 5 .

The target device 5 includes a plate-shaped cathode electrode 21, a sputtering target 14 disposed on one surface of the cathode electrode 21, and one or more magnet devices ₃₀₁ , ₃₁₁ to ₃₁₄ , ₃₀₂ disposed on the surface of the cathode electrode 21 opposite to the sputtering target 14 (Fig. 3 (a) to (c)).

The film formation object 13 is disposed inside the vacuum chamber 25 , and a sputtering surface 24 of the sputtering target 14 to be sputtered and a film formation surface 22 of the film formation object 13 on which a thin film is formed are opposed to each other.

The film formation object 13 is placed on the mounting table 23 and is stationary relative to the sputtering target 14 . However, either the film formation object 13 or the sputtering target 14 or both of them may be moved inside the vacuum chamber 25 .

The vacuum chamber 25 is connected to a gas source 26 and a vacuum exhaust device 29. When the vacuum exhaust device 29 is activated to exhaust the inside of the vacuum chamber 25 and form a vacuum environment inside the vacuum chamber 25, a sputtering gas is introduced from the gas source 26 into the inside of the vacuum chamber 25.

The cathode electrode 21 is connected to a sputtering power source 28, and a sputtering voltage can be applied from the sputtering power source 28. The sputtering target 14 is arranged in close contact with the cathode electrode 21. Other cathode electrodes 16 ₁ to 16 ₆ described later are also connected to the sputtering power source 28, and a sputtering voltage can be applied thereto.

As shown in Fig. 3(a), one or more magnet devices 30 ₁ , 31 ₁ to 31 ₄ , 30 ₂ are arranged on the opposite side of the surface where the sputtering target 14 is arranged on one of the two surfaces of the cathode electrode 21. Fig. 3(b) is a cross-sectional view taken along line A ₁ -A ₁ of Fig. 3(a), and Fig. 3(c) is a cross-sectional view taken along line B ₁ -B ₁ of Fig. 3(a).

The sputtering target 14 of FIG. 3( a ) to ( c ) is a rectangular or square rectangular quadrilateral.

The target device 60 of Figures 6(a) and (b) described later has: a cylindrical cathode electrode 61; and a cylindrical sputtering target 64 arranged on the outer peripheral surface of the cylindrical cathode electrode 61. The cylindrical cathode electrode 61 is located in the area on the inner peripheral side of the cylindrical sputtering target 64. On the inner peripheral side of the cylindrical cathode electrode 61, in the area surrounded by the cylindrical cathode electrode 61, the magnet device 32 shown in Figures 5(b) and (c) is arranged.

Here, the magnet devices 30 ₁ , 31 ₁ ~31 ₄ , 30 ₂ arranged in the above-mentioned rectangular sputtering target 14 and the magnet device 32 arranged in the cylindrical cathode electrode 61 are respectively long and thin and have a length direction. If the length direction of each magnet device 30 ₁ , 31 ₁ ~31 ₄ , 30 ₂ , 32 is called a main direction, then each magnet device 30 ₁ , 31 ₁ ~31 ₄ , 30 ₂ , 32 is arranged so that the main direction will be parallel to the two sides of the flat-plate-shaped sputtering target 14 or the central axis of the cylindrical sputtering target 64.

Therefore, when there are a plurality of magnet devices 30 ₁ , 31 ₁ -31 ₄ , 30 ₂ , the magnet devices 30 ₁ , 31 ₁ -31 ₄ , 30 ₂ are arranged parallel to each other. The length of the side of the flat sputtering target 14 parallel to the main direction is longer than the length of the side perpendicular to the main direction.

<Magnetic Device> Each magnetic device 30 ₁ , 31 ₁ to 31 ₄ , 30 ₂ , 32 has a yoke 39 , 40 , which is a thin plate arranged along the main direction. The yoke 39 , 40 is formed of a high magnetic permeability material. When there are a plurality of magnetic devices 30 ₁ , 31 ₁ to 31 ₄ , 30 ₂ , each yoke 39 can be arranged on the same plane or on different planes.

Each of the magnet devices 30 ₁ , 31 ₁ to 31 ₄ , 30 ₂ , and 32 includes variable magnetic portions 53 a , 53 b , 54 a , and 54 b having a longitudinal direction, and fixed magnetic portions 51 and 52 .

The variable magnetic force portions 53a, 53b, 54a, 54b are long and thin and have a length direction, and the length direction is arranged along the main direction at both ends of each magnet device 30 ₁ , 31 ₁ -31 ₄ , 30 ₂ , 32 .

The fixed magnetic parts 51 and 52 are disposed between the two variable magnetic parts 53a, 53b, 54a, 54b at both ends with their length directions along the main direction. The variable magnetic parts 53a, 53b, 54a, 54b and the fixed magnetic parts 51 and 52 are disposed on a straight line.

The fixed magnetic parts 51 and 52 have first central outer parts 35a and 36a, second central outer parts 35b and 36b, and central inner parts 33 and 34, which are respectively formed of thin and long permanent magnets.

The first central outer portions 35a, 36a and the second central outer portions 35b, 36b are arranged with their length directions along the main direction, and both ends of the first central outer portions 35a, 36a and the second central outer portions 35b, 36b are aligned in a manner that one does not protrude more than the other.

The central inner portions 33 and 34 are disposed between the first central outer portions 35a and 36a and the second central outer portions 35b and 36b with their length directions along the main direction.

The variable magnetic parts 53a, 53b, 54a, 54b respectively have: a first end outer part 37a, 38a and a second end outer part 37b, 38b formed by a slender permanent magnet, a connecting part 37c, 38c formed by a slender curved or broken line permanent magnet, and an end inner part 43, 44 formed by a plurality of variable magnets 47 arranged in a straight line.

The first end outer portion 37a, 38a and the second end outer portion 37b, 38b are arranged along the main direction in their length direction, and one end is aligned toward the fixed magnetic portion 51, 52, and the other end is the end connected to the connecting portion 37c, 38c. Therefore, the first end outer portion 37a, 38a and the second end outer portion 37b, 38b are connected by the connecting portion 37c, 38c to form the U-shaped permanent magnet member 37, 38.

The inner end portions 43 and 44 are disposed between the first outer end portions 37a and 38a and the second outer end portions 37b and 38b with their length directions along the main direction.

<Variable magnet> Referring to Fig. 2 (a) and (b), the variable magnet 47 has: a base magnetic part 71 formed by a permanent magnet, and an electromagnetic part 73 formed by a coil of an insulating coated wire wound in a spiral shape.

An excitation power source 18 is disposed outside the vacuum chamber 25 , and the electromagnetic part 73 is connected to the excitation power source 18 via wiring 75 . The excitation current output by the excitation power source 18 flows and generates magnetic poles of opposite polarities at both ends of the electromagnetic part 73 .

The variable magnet 47 of FIG. 2( a) is configured so that the base magnetic portion 71 is inserted into the inside of the electromagnetic portion 73, the electromagnetic portion 73 is wound around the base magnetic portion 71, and the straight line connecting the centers of the magnetic poles of opposite polarity of the base magnetic portion 71 and the straight line connecting the centers of the magnetic poles of opposite polarity generated by the electromagnetic portion 73 are consistent. As a result, the magnetic field formed by the base magnetic portion 71 and the magnetic field formed by the electromagnetic portion 73 overlap each other. Symbol 70 is a straight line connecting the centers of the magnetic poles of opposite polarity.

The polarity of the magnetic pole of the electromagnetic part 73 changes according to the direction of the exciting current flowing to the electromagnetic part 73.

When there are a plurality of yokes 39, each yoke 39 is separately arranged for each magnet device 30 ₁ , 31 ₁ to 31 ₄ , and 30 ₂ , and the longitudinal direction of the yoke 39 is arranged along the main direction so that both ends of the longitudinal direction are aligned.

The permanent magnets and electromagnetic magnets of the magnet devices 30 ₁ , 31 ₁ - 31 ₄ , 30 ₂ , 32 are disposed between the yokes 39 , 40 and the cathode electrodes 21 , 61 .

The variable magnet 47 is fixed to the yokes 39 and 40. If the surface of the variable magnet 47 fixed to the yokes 39 and 40 is set as the bottom surface, and the surface opposite to the bottom surface is set as the upper end surface, the magnetic pole of the base magnetic force part 71 is one of the two polarities of the N pole and the S pole, and the magnetic pole of one polarity will be located on the bottom surface side, and the magnetic pole of the other polarity will be located on the upper end surface side. The magnetic pole generated by the electromagnetic part 73 is also one of the polarities formed on the yokes 39 and 40 side, and the magnetic pole of the other polarity will be formed on the cathode electrode 21 and 61 side. On the opposite side to the yokes 39 and 40, cathode electrodes 21 and 61 are located.

Therefore, the direction and intensity of the magnetic field formed by the basic magnetic part 71 and the magnetic field generated by the electromagnetic part 73 will become the direction and intensity of the magnetic field formed by the variable magnet 47.

The excitation power source 18 is connected to the control device 12 , and the direction and magnitude of the excitation current supplied by the excitation power source 18 to the electromagnetic stone part 73 are controlled by the control device 12 .

Although the excitation current flows in two directions, no matter which direction the excitation current flows, the magnetic field strength formed by the flowing electromagnetic part 73 will not be stronger than the magnetic field strength formed by the basic magnetic part 71.

When an excitation current in one direction flows to the electromagnetic part 73, and among the magnetic poles generated by the electromagnetic part 73, the polarity of the magnetic poles toward the yokes 39 and 40 is consistent with the polarity of the magnetic poles toward the yokes 39 and 40 of the basic magnetic part 71, among the magnetic poles generated by the electromagnetic part 73, the polarity of the magnetic poles of the cathode electrodes 21 and 61 on the opposite side of the yokes 39 and 40 is consistent with the polarity of the magnetic poles of the cathode electrodes 21 and 61 on the opposite side of the yokes 39 and 40 of the basic magnetic part 71.

In this case, the magnetic field strength formed by the basic magnetic part 71 and the magnetic field strength formed by the electromagnetic part 73 will be added, and the magnetic field strength of the variable magnet 47 is greater than the magnetic field strength of the basic magnetic part 71.

On the contrary, when the excitation current in the opposite direction flows to the electromagnetic part 73, and the polarity of the magnetic poles toward the yokes 39 and 40 among the magnetic poles generated by the electromagnetic part 73 forms an opposite polarity with the polarity of the magnetic poles toward the yokes 39 and 40 of the basic magnetic part 71, the polarity of the magnetic poles toward the side opposite to the position of the yokes 39 and 40 among the magnetic poles generated by the electromagnetic part 73 also forms an opposite polarity with the polarity of the magnetic poles toward the side opposite to the position of the yokes 39 and 40 of the basic magnetic part 71.

In this case, the magnetic field strength formed by the electromagnetic part 73 is subtracted from the magnetic field strength formed by the basic magnetic part 71, and the magnetic field strength of the variable magnet 47 is smaller than the magnetic field strength of the basic magnetic part 71.

In addition, as the core of the variable magnet 47, a material with high magnetic permeability can be used instead of a permanent magnet. Furthermore, when a permanent magnet is used in the base magnetic force portion 71, one of the magnetic poles of the permanent magnet can be directed toward the target direction. Furthermore, by controlling the direction or current value of the excitation current, the magnetic field strength of the base magnetic force portion 71 can be strengthened or weakened.

FIG2(b) shows a variable magnet 47 formed by inserting a core 72 made of a material with high magnetic permeability and difficult to form a permanent magnet into an electromagnetic part 73, winding the core 72 by wiring the electromagnetic part 73, and configuring a base magnetic part 71 outside the electromagnetic part 73.

In both the cases of FIG. 2( a ) and ( b ), the electromagnetic portion 73 and the base magnetic portion 71 are arranged in such a manner that a straight line 70 connecting the centers of the magnetic poles formed by the electromagnetic portion 73 passes through the centers of the two magnetic poles of the base magnetic portion 71 .

Among the plurality of variable magnets 47 disposed in the variable magnetic force parts 53a, 53b, 54a, 54b, some of the magnetic cores may be permanent magnets, and the other magnetic cores may be formed of materials with high magnetic permeability. Moreover, the variable magnetic force parts 53a, 53b, 54a, 54b only need to have at least one variable magnet 47, and may also be a combination of a variable magnet 47 and a permanent magnet. Moreover, it is not limited to the case where the end portion is a variable magnet 47.

<Permanent magnet> The permanent magnet included in each magnet device 30 ₁ , 31 ₁ to 31 ₄ , 30 ₂ , 32 is fixed to the yoke 39 , 40 provided for each magnet device 30 ₁ , 31 ₁ to 31 ₄ , 30 ₂ , 32, respectively. If the surface fixed to the yoke 39 , 40 of the permanent magnet is set as the bottom surface and the surface located on the opposite side of the bottom surface is set as the upper end surface, the magnetic poles are respectively located on the bottom surface and the upper end surface.

If the polarity of one of the S pole and the N pole is set as the first pole and the polarity of the other is set as the second pole, then in each of the magnetic devices 30 ₁ , 31 ₁ ~ 31 ₄ , 30 ₂ , 32 , the permanent magnets in the first central outer portion 35a, 36a, the second central outer portion 35b, 36b, the first end outer portion 37a, 38a, the second end outer portion 37b, 38b, and the connecting portion 37c, 38c have the same polarity as the first pole, and the magnetic pole of the second pole with the opposite polarity to the first pole faces the cathode electrode 21, 61.

The variable magnet 47 of the end inner portions 43 and 44, the central inner portions 33 and 34, and the permanent magnets in the end inner portions 43 and 44 have magnetic poles with opposite polarities to the first central outer portion 35a and 36a, the second central outer portion 35b and 36b, the first end outer portion 37a and 38a, the second end outer portion 37b and 38b, and the connecting portions 37c and 38c, and will face the yokes 39 and 40 and the cathode electrode 21, respectively.

Therefore, the magnetic poles of the first pole and the second pole face the cathode electrodes 21 and 61 to form arc-shaped magnetic field lines on the sputtering surfaces 24 and 66 of the sputtering targets 14 and 64 to capture electrons.

The interior of the vacuum chamber 25 is evacuated by the vacuum exhaust device 29 to form a vacuum environment. Then, a sputtering gas is introduced into the interior of the vacuum chamber 25 from the gas source 26. A voltage is applied to the cathode electrodes 21 and 61 to emit electrons from the sputtering surfaces 24 and 66.

The magnet devices 30 ₁ , 31 ₁ to 31 ₄ , 30 ₂ , and 32 capture electrons by the magnetic field formed on the sputtering surfaces 24 and 66 , and plasma of the sputtering gas is efficiently formed near the sputtering surfaces 24 and 66 .

The first central outer portion 35a, 36a, the second central outer portion 35b, 36b, the first end outer portion 37a, 38a, the second end outer portion 37b, 38b, and the connecting portions 37c, 38c are arranged in a ring shape, and a ring-shaped magnet portion is formed by the first central outer portion 35a, 36a, the second central outer portion 35b, 36b, the first end outer portion 37a, 38a, the second end outer portion 37b, 38b, and the connecting portions 37c, 38c. Furthermore, if the central inner portion 33, 34 and the end inner portion 43, 44 are arranged on the same straight line to form a linear magnet portion, the linear magnet portion is arranged on the inner side of the ring-shaped magnet portion.

<Erosion area> The plasma on the sputtering surface 24, 66 has a high intensity in the annular area between the annular magnet part and the linear magnet part. The portion that is sputtered a lot on the sputtering surface 24 is the annular area with high plasma intensity for each magnet device ₃₀₁ , ₃₁₁ to ₃₁₄ , ₃₀₂ , 32. This area is called the erosion area.

In particular, the area near the outer periphery of the flat-plate-shaped sputtering target 14 is likely to be sputtered in large quantities, and the areas at both ends in the longitudinal direction of the cylindrical sputtering target 64 are likely to be sputtered in large quantities. Among the areas of the sputtering surface 24, the distance between the area where a large amount of sputtering is performed and the magnet devices 30 ₁ , 31 ₁ to 31 ₄ , 30 ₂ , 32 is shorter than the distance between the area where only a small amount of sputtering is performed and the magnet devices 30 ₁ , 31 ₁ to 31 ₄ , 30 ₂ , 32. This is because the magnetic field intensity on the sputtering surface 24 of the area where a large amount of sputtering is performed becomes stronger, so a larger amount of sputtering is performed.

In the flat sputtering target 14, the variable magnet 47 is arranged near the outer periphery of the sputtering target 14 with the magnetic poles facing, and in the cylindrical sputtering target 64, the variable magnet 47 is arranged near the ends of the sputtering target 64 with the magnetic poles facing. Therefore, the erosion area is deeper near the outer periphery or the ends than near the center of the sputtering targets 14 and 64.

The number of sheets of the film-forming object 13 forming a thin film is counted by the control device 12. If the number of sheets of the film-forming object 13 forming a thin film increases, the control device 12 will control the direction and size of the exciting current to reduce the intensity of the magnetic field formed by the variable magnet 47. Even if the depth of the eroded area is deeper than the center, the intensity of the magnetic field formed by the variable magnet 47 on the sputtering surface 24 is constant, and the sputtering amount near the periphery will not increase.

In this case, for example, in the variable magnet 47, the magnetic poles of the electromagnetic portion 73 and the magnetic poles of the basic magnetic portion 71 are set to have the same polarity as the cathode electrode 21 to enhance the magnetic field strength formed by the variable magnet 47, and the excitation current is reduced as the number of sheets of the film-forming object 13 forming a thin film in the sputtering device 2 increases, thereby reducing the magnetic field strength formed by the variable magnet 47 as the number of sheets increases.

After the magnitude of the exciting current becomes zero, the direction of the flow of the exciting current is reversed, and the magnetic poles of the electromagnetic portion 73 and the basic magnetic portion 71 facing the cathode electrode 21 are set to opposite polarities. As the number of sheets increases, the magnetic field strength formed by the basic magnetic portion 71 is weakened according to the magnetic field strength formed by the electromagnetic portion 73. If the magnetic field strength formed by the variable magnet 47 decreases as the number of sheets increases, the magnetic field strength of the portion that is sputtered in large quantities will decrease as it approaches the magnet devices 30 ₁ , 31 ₁ ~ 31 ₄ , 30 ₂ , 32. Therefore, the sputtering amount between the outer periphery area close to the sputtering surface 24 and the inner area thereof will become uniform.

Therefore, the magnetic field strength formed by the base magnetic force part 71 is completed without being formed by the electromagnetic part 73, so the exciting current is small and complete, and the heat generated by the variable magnet 47 is reduced. As a result, the current consumption is reduced and the heat is reduced. In addition, even if an accident occurs in which the exciting current does not flow, the magnetic field formed by the base magnetic force part 71 does not disappear, so sputtering can continue, thereby improving the reliability of the device.

However, it is also possible to form the magnetic field of the electromagnetic part 73 in a direction that reduces the magnetic field of the basic magnetic part 71 from the beginning, increase the excitation current without changing the direction, and increase the magnetic field strength of the electromagnetic part 73 as the number of sheets formed by the thin film increases, thereby reducing the magnetic field strength of the variable magnet 47.

The present invention is not limited to the case of reducing the magnetic field strength of all variable magnets 47. Considering the distribution of the erosion area in the sputtering surface, the present invention also includes the case of providing both variable magnets 47 that reduce the magnetic field strength and variable magnets 47 that increase the magnetic field strength among a plurality of variable magnets 47.

Each magnet device 30 ₁ , 31 ₁ to 31 ₄ , 30 ₂ , 32 is arranged in parallel to each other in a row. Both ends of each magnet device 30 ₁ , 31 ₁ to 31 ₄ , 30 ₂ arranged on a plane are aligned to be arranged in a straight line. On the other hand, the magnet device 32 arranged in the cylindrical cathode electrode 61 is arranged along a circle that is concentric with the circle of the cross section of the cathode electrode 61 and has a smaller radius than the circle.

When a plurality of magnet devices 30 ₁ , 31 ₁ ~ 31 ₄ , 30 ₂ are arranged in a row parallel to each other, the number of variable magnets 47 of the variable magnetic force parts 53a, 53b of the two magnet devices 30 ₁ , 30 ₂ located at both ends of the magnet devices _{30 1 ,} 30 ₂ arranged in a row is greater than the number of variable magnets 47 of the variable magnetic force parts 54a, 54b of the magnet devices 31 ₁ ~ 31 ₄ located in other locations _, and the sputtering amount in the area near the edge parallel to the main direction in the sputtering surface 24 will be adjusted.

<Movement of Magnetic Devices> The plurality of magnetic devices 30 ₁ , 31 ₁ to 31 ₄ , and 30 ₂ are fixed to the moving plate 45. A driving device 19 such as a motor is disposed outside the vacuum chamber 25. When the moving plate 45 is moved by the driving device 19, the magnetic devices 30 ₁ , 31 ₁ to 31 ₄ , and 30 ₂ move together.

The movement of the magnet device 32 disposed in the cylindrical cathode electrode 61 will be described later.

In the case of a flat-plate-shaped sputtering target 14, if the direction perpendicular to the main direction and parallel to the sputtering surface 24 is set as the vertical direction (the sputtering surface 24 in this case is not sputtered and no erosion area is formed), the vertical length of the sputtering target 14 configured as shown in Figures 3(a) to (c) is longer than the vertical length of the area where the magnet devices 30 ₁ , 31 ₁ ~31 ₄ , 30 ₂ are arranged, and the moving plate 45 is reciprocated in the direction along the vertical direction by the driving device 19, and the area with strong plasma will be moved from the sputtering surface 24.

<Other Examples> The sputtering target 14 of FIG. 3(a) is a single plate made of a film-forming material, and the cathode electrode 21 is a single electrode plate, but another example of the sputtering device 2 of the present invention is as shown in FIG. 4(a), and has a plurality of target devices 10 ₁ , 11 ₁ to 11 ₄ , and 10 ₂ . Each target device 10 ₁ , 11 ₁ to 11 ₄ , and 10 ₂ has an individual elongated cathode electrode 16 ₁ to 16 ₆ , and a sputtering target 15 ₁ to 15 ₆ is disposed on one side of each cathode electrode 16 ₁ to 16 ₆ , and the above-mentioned magnet devices 30 ₁ , 31 ₁ to 31 ₄ , and 30 ₂ are disposed on the opposite side.

The plurality of cathode electrodes 16 ₁ to 16 ₆ are arranged separately and parallel to each other on the same plane.

Fig. 4(b) is a cross-sectional view taken along line _A2 - _A2 of Fig. 4(a), and Fig. 4(c) is a cross-sectional view taken along line _B2 - _B2 of Fig. 4(a). In Fig. 3(a) and Fig. 4(a), the moving plate 45, the cathode electrodes ₂₁ , _161-166 and the yoke 39 are omitted.

<Cylindrical Shape> Reference numeral 60 in FIG. 5( a ) denotes a target device of another structure, and a cross-sectional view thereof taken along line A ₃ -A ₃ is shown in FIG. 6( a ), and a cross-sectional view taken along line B ₃ -B ₃ is shown in FIG. 6( b ).

As described above, the target device 60 includes: a cylindrical cathode electrode 61; and a cylindrical sputtering target 64 disposed on the outer peripheral surface of the cathode electrode 61. The cathode electrode 61 is located in the inner peripheral area of the sputtering target 64.

The magnet device 32 shown in Fig. 5(b) is arranged on the inner circumference of the cylindrical cathode electrode 61 in the area surrounded by the cathode electrode 61. Fig. 5(c) is a cross-sectional view taken along the line C-C of Fig. 5(b).

This magnet device 32 has a yoke 40, and the above-mentioned fixed magnetic force part 52 and variable magnetic force parts 54a, 54b are arranged on the yoke 40. The fixed magnetic force part 52 and the variable magnetic force parts 54a, 54b are constructed as described above, but the magnetic pole in the magnet device 32 is arranged to face the inner peripheral surface of the cathode electrode 61, and an inclined surface or a connecting surface is provided on the yoke 40.

The yoke 40 is provided on a base 58 , the base 58 is mounted on a support shaft 56 , and the support shaft 56 is mounted on a rotating shaft 57 .

The central axis of the cylindrical cathode electrode 61 is consistent with the central axis of the cylindrical sputtering target 64. The symbol 74 in FIG. 5(a) represents the central axis. The direction in which the central axis 74 extends forms the main direction.

The rotation axis of the rotation shaft 57 coincides with the center axis 74 of the cathode electrode 61 and the center axis 74 of the sputtering target 64 . When the rotation shaft 57 is rotated by the driving device, the magnet device 32 rotates around the center axis 74 .

At this time, the distance between the magnetic pole and the cathode electrode 61 in the magnet device 32 is unchanged, and the magnetic field strength is constant, and the amount of sputtering on the variable magnetic force parts 54a and 54b will increase. The present invention controls the magnetic field strength formed by the variable magnet 47, and reduces the magnetic field strength formed by the variable magnetic force parts 54a and 54b according to the number of processed objects. By changing the magnetic field strength, the uneven distance between the sputtering surface 66 of the sputtering target 64 and the magnet device 32 is compensated, and the surface of the sputtering target 64 is uniformly sputtered.

The variable magnet 47 is arranged as a unit 68 inside a box 67 provided with refrigerant paths 69a, 69b as shown in FIG. 7. The refrigerant is supplied from the supply pipes 63a, 63b to the refrigerant paths 69a, 69b and the refrigerant flows in the refrigerant paths 69a, 69b. The refrigerant that has absorbed heat is discharged from the discharge pipes 65a, 65b to the outside of the box 67 and is cooled by the cooling device 20 arranged outside the vacuum chamber 25. If the refrigerant is circulated through the refrigerant paths 69a, 69b returning from the supply pipes 63a, 63b to the box 67, the excitation current can be increased.

Although each variable magnet 47 may be arranged in a different box 67, arranging a plurality of variable magnets 47 inside the same box 67 can reduce the number of supply pipes 63a, 63b or exhaust pipes 65a, 65b.

2: Sputtering device 5, 10 ₁ , 11 ₁ ~ 11 ₄ , 10 ₂ , 60: Target device 13: Film forming object 14, _{15 1} ~ 15 ₆ , 64: Sputtering target 16 ₁ ~ 16 ₆ , 21, 61: Cathode electrode 18: Excitation power source 22: Film forming surface 24, 66: Sputtering surface 25: Vacuum chamber 30 ₁ , 31 ₁ ~ 31 ₄ , 30 ₂ ,32: magnet device 33,34: central inner part 35a,36a: first central outer part 35b,36b: second central outer part 37a,38a: first end outer part 37b,38b: second end outer part 37c,38c: connecting part 43,44: end inner part 47: variable magnet 51,52: fixed magnetic part 53a,53b,54a,54b: variable magnetic part 67: box 71: base magnetic part 73: electromagnetic part

[Figure 1] is a diagram for explaining the spitting device of the present invention. [Figure 2 (a), (b)] is a diagram for explaining the variable magnet of the present invention. [Figure 3 (a) ~ (c)] is a diagram for explaining a target device of one example of the present invention. [Figure 4 (a) ~ (c)] is a diagram for explaining another example of the target device of the present invention. [Figure 5 (a)] is a diagram for explaining another example of the target device of the present invention, (b), (c) are diagrams for explaining the magnet device used in the target device. [Figure 6 (a), (b)] is a cross-sectional view for explaining another example of the target device of the present invention. [Figure 7] is a diagram for explaining a box for cooling the variable magnet. [FIG. 8(a), (b)] are diagrams for explaining a target device used in a sputtering device of the prior art.

5: Target device

14: Splash target

21: Cathode electrode

30 ₁ ,31 ₁ :31 ₄ ,30 ₂ :Magnetic device

33,34: Central inner part

35a,36a: First central outer part

35b,36b: Second central outer part

37a, 38a: Outer side of the first end

37b, 38b: Outer side of the second end

37c,38c: Connection part

39: yoke

43,44: medial end

45:Moving board

47: Variable magnet

51,52: Fixed magnetic part

53a,53b,54a,54b: variable magnetic part

Claims (14)

A sputtering device has a target device, which includes: a cathode electrode; a sputtering target, which is arranged on one side of the cathode electrode, and the sputtering surface exposed in the vacuum tank will be sputtered; and a magnet device, which is arranged on the surface of the cathode electrode opposite to the one side, and forms a magnetic field on the sputtering surface. If the sputtering target is sputtered, a thin film is formed on the film forming surface of the film forming object located in the vacuum tank. The magnet device is long and thin and has a length direction. Variable magnetic parts are respectively arranged at both ends of the length direction, and a fixed magnetic part is arranged between the variable magnetic parts. The fixed magnetic force part comprises: first and second central outer parts formed by the thin and long permanent magnets arranged along the aforementioned length direction; and a central inner part formed by the thin and long permanent magnets arranged between the first and second central outer parts along the aforementioned length direction. The variable magnetic force part comprises: first and second end outer parts formed by the thin and long permanent magnets arranged along the aforementioned length direction; and a plurality of variable magnets arranged between the first and second end outer parts along the aforementioned length direction, and the plurality of variable magnets are arranged in the aforementioned length direction on the same straight line as the central inner part. on the inner side of the end; and the connecting part formed by the elongated and curved permanent magnets connecting the ends of the first and second end outer sides of the aforementioned magnet device, if the magnetic pole of the polarity of one of the N poles and the S pole is set as the first pole and the magnetic pole of the polarity of the other is set as the second pole, then the first and second central outer sides, the first and second end outer sides, and the connecting part are such that the magnetic pole of the first pole will face the cathode electrode, and the central inner side and the end inner side are such that the magnetic pole of the second pole will face the cathode electrode, and the variable magnet has: a magnetic core part, and a magnetic pole having The coil wound around the magnetic core portion forms an electromagnetic part of a magnetic field when an excitation current flows. Among the variable magnets, the magnetic core portion of at least one of the variable magnets has a basic magnetic part formed by a permanent magnet. The basic magnetic part is inserted into the interior of the electromagnetic part and is configured so that a straight line connecting the centers of the magnetic poles of opposite polarity of the basic magnetic part and a straight line connecting the centers of the magnetic poles of opposite polarity generated by the electromagnetic part coincide with each other. The direction and strength of the magnetic field formed by the variable magnet are configured to be variable according to the direction and magnitude of the flow of the excitation current. As in claim 1, the intensity of the magnetic field formed by the variable magnet is the intensity of the magnetic field synthesized by the magnetic field of the basic magnetic part and the magnetic field of the electromagnetic part. A sputtering device as claimed in claim 2, wherein the magnetic pole of the first pole of the base magnetic part faces the cathode electrode. A sputtering device as claimed in claim 2, wherein the magnetic pole of the second pole of the base magnetic part faces the cathode electrode. As in claim 1 to claim 4, the intensity of the magnetic field formed by the variable magnet can be changed during the period when the sputtering target is being sputtered. As in claim 1 to claim 4, the sputtering target and the magnet device are configured to move reciprocally relative to each other. As in claim 1 to claim 4, the target device comprises: a cathode electrode; a sputtering target arranged on the cathode electrode; and a plurality of magnet devices arranged parallel to each other. The sputtering device of claim 1 to claim 4 is a sputtering device having a plurality of the aforementioned magnetic devices, wherein the plurality of the aforementioned magnetic devices are arranged in parallel to each other and arranged in a row, and among the arranged aforementioned magnetic devices, the number of the aforementioned variable magnets of the aforementioned magnetic devices located at both ends is a greater number than the number of the aforementioned variable magnets of the aforementioned magnetic devices located at other positions. A sputtering device as claimed in claim 1 to claim 4, wherein there are a plurality of the aforementioned target devices. The sputtering device of claim 1 to claim 4, wherein the target device comprises: The cathode electrode formed into a cylindrical shape; the cylindrical sputtering target arranged on the periphery of the cathode electrode; and the magnet device arranged in the area surrounded by the cathode electrode. As in claim 1 to 4, the variable magnet is disposed in a box, and a cooling medium flows in a cooling medium path provided in the box to cool the variable magnet. A thin film manufacturing method is a method for manufacturing a thin film by controlling a sputtering device to form a thin film on a film-forming object. The sputtering device has a target device, which is provided with: a cathode electrode; a sputtering target, which is arranged on one side of the cathode electrode, and the sputtering surface exposed in a vacuum tank will be sputtered; and a magnet device, which is arranged on the surface of the cathode electrode on the opposite side to the one side, and forms a magnetic field on the sputtering surface. If the sputtering target is sputtered, a thin film is formed on the film-forming surface of the film-forming object located in the vacuum tank. The magnet device is long and thin and has a length direction. Variable magnetic force parts are respectively arranged at both ends of the length direction. A fixed magnetic part is arranged between the magnetic parts, and the fixed magnetic part has: first and second central outer parts formed by thin and long permanent magnets arranged along the length direction; and a central inner part formed by thin and long permanent magnets arranged between the first and second central outer parts along the length direction. The variable magnetic part has: first and second end outer parts formed by thin and long permanent magnets arranged along the length direction; and a plurality of variable magnets arranged between the first and second end outer parts along the length direction, and the plurality of variable magnets are arranged in the length direction on the same straight line as the central inner part. end inner part; and the connecting part formed by the elongated and curved permanent magnets connecting the ends of the first and second end outer parts at both ends of the aforementioned length direction of the aforementioned magnet device. Among the N pole and the S pole, if the magnetic pole of the polarity of either side is set as the first pole and the magnetic pole of the polarity of the other side is set as the second pole, then the first and second central outer parts, the first and second end outer parts, and the connecting part are such that the magnetic pole of the first pole will face the aforementioned cathode electrode, and the central inner part and the aforementioned end inner part are such that the magnetic pole of the second pole will face the aforementioned cathode electrode. The aforementioned variable magnet has: a magnetic core part, and a coil wound around the aforementioned magnetic core part. If the excitation current flows , the electromagnetic part that forms the magnetic field, the magnetic core part of at least one of the variable magnets has a base magnetic part formed by a permanent magnet, the base magnetic part is inserted into the interior of the electromagnetic part, and is configured so that the straight line connecting the centers of the magnetic poles of opposite polarity of the base magnetic part and the straight line connecting the centers of the magnetic poles of opposite polarity generated by the electromagnetic part are consistent, the direction and intensity of the magnetic field formed by the variable magnet are configured to be changeable according to the direction and magnitude of the flow of the excitation current, and if the number of the film-forming objects forming the thin film increases, the intensity of the magnetic field formed by the variable magnet is reduced. A thin film manufacturing method is a method for manufacturing a thin film by controlling a sputtering device to form a thin film on a film-forming object. The sputtering device has a target device, which is provided with: a cathode electrode; a sputtering target, which is arranged on one side of the cathode electrode, and the sputtering surface exposed in a vacuum tank will be sputtered; and a magnet device, which is arranged on the surface of the cathode electrode on the opposite side to the one side, and forms a magnetic field on the sputtering surface. If the sputtering target is sputtered, a thin film is formed on the film-forming surface of the film-forming object located in the vacuum tank. The magnet device is long and thin and has a length direction. Variable magnetic force parts are respectively arranged at both ends of the length direction. A fixed magnetic part is arranged between the magnetic parts, and the fixed magnetic part has: first and second central outer parts formed by thin and long permanent magnets arranged along the longitudinal direction; and a central inner part formed by thin and long permanent magnets arranged between the first and second central outer parts along the longitudinal direction. The variable magnetic part has: first and second end outer parts formed by thin and long permanent magnets arranged along the longitudinal direction; and a plurality of variable magnets arranged between the first and second end outer parts along the longitudinal direction, and the plurality of variable magnets are arranged in the longitudinal direction on the same straight line as the central inner part. end inner part; and the connecting part formed by the elongated and curved permanent magnets connecting the ends of the first and second end outer parts at both ends of the aforementioned length direction of the aforementioned magnet device. Among the N pole and the S pole, if the magnetic pole of the polarity of either side is set as the first pole and the magnetic pole of the polarity of the other side is set as the second pole, then the first and second central outer parts, the first and second end outer parts, and the connecting part are such that the magnetic pole of the first pole will face the aforementioned cathode electrode, and the central inner part and the aforementioned end inner part are such that the magnetic pole of the second pole will face the aforementioned cathode electrode. The aforementioned variable magnet has: a magnetic core part, and a coil wound around the aforementioned magnetic core part. If the excitation current flows , the electromagnetic part that forms the magnetic field, the magnetic core part of at least one of the variable magnets has a base magnetic part formed by a permanent magnet, the base magnetic part is inserted into the interior of the electromagnetic part, and is configured so that the straight line connecting the centers of the magnetic poles of opposite polarity of the base magnetic part and the straight line connecting the centers of the magnetic poles of opposite polarity generated by the electromagnetic part are consistent, the direction and intensity of the magnetic field formed by the variable magnet are configured to be changeable according to the direction and magnitude of the flow of the excitation current, and if the number of the film-forming objects forming the thin film increases, the intensity of the magnetic field formed by the variable magnet increases. A thin film manufacturing method uses a target device, which is provided with: a cathode electrode; a sputtering target, which is arranged on one side of the cathode electrode, and the sputtering surface exposed in the vacuum tank will be sputtered; and a plurality of slender magnet devices, which are arranged on the surface of the cathode electrode opposite to the one side, forming a magnetic field on the sputtering surface, sputtering the sputtering target, and forming a thin film on the film forming surface of a film forming object located in the vacuum tank. The magnet device is slender and has a length direction. Variable magnetic parts are respectively arranged at both ends of the length direction, and a fixed magnetic part is arranged between the variable magnetic parts. The fixed magnetic force part comprises: first and second central outer parts formed by the thin and long permanent magnets arranged along the length direction; and a central inner part formed by the thin and long permanent magnets arranged between the first and second central outer parts along the length direction. The variable magnetic force part comprises: first and second end outer parts formed by the thin and long permanent magnets arranged along the length direction; and a plurality of variable magnets arranged between the first and second end outer parts along the length direction, and the plurality of variable magnets are arranged in the end inner parts on the same straight line as the central inner part in the length direction. side; and a connecting portion formed by a thin and curved permanent magnet connecting the ends of the first and second end outer portions at both ends of the aforementioned length direction of the aforementioned magnet device. Among the N pole and the S pole, if the magnetic pole of the polarity of either side is set as the first pole and the magnetic pole of the polarity of the other side is set as the second pole, then the first and second central outer portions, the first and second end outer portions, and the aforementioned connecting portion are such that the magnetic pole of the first pole will face the aforementioned cathode electrode, and the central inner portion and the aforementioned end inner portion are such that the magnetic pole of the second pole will face the aforementioned cathode electrode. The aforementioned variable magnet has: a magnetic core portion, and a surrounding portion wound around the aforementioned magnetic core portion. The invention relates to a coil, wherein when an exciting current flows, an electromagnetic part of a magnetic field is formed. Among the variable magnets, the magnetic core part of at least one of the variable magnets has a base magnetic part formed by a permanent magnet. The base magnetic part is inserted into the interior of the electromagnetic part and is arranged so that a straight line connecting the centers of magnetic poles of opposite polarity of the base magnetic part and a straight line connecting the centers of magnetic poles of opposite polarity generated by the electromagnetic part coincide with each other, and the direction and magnitude of the exciting current flowing to the electromagnetic part are controlled, and the magnetic field strength formed by the variable magnet is reduced according to the increase in the number of sheets of the film-forming object forming the thin film.

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