JP2002069631A - Sputtering method and equipment therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve conventional sputtering equipments in which it is difficult to simultaneously satisfy a uniform film thickness and the formation of a deposition film parallel magnetized in one direction. SOLUTION: The method is characterized by the rotation of a substrate holding plate 10 and a magnetic field generating device such as 11 (in the figure) at a same speed while the deposition film 7a is formed. Thus, the deposition film 7a that has uniform thickness and is magnetized in one direction is formed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputtering apparatus and, for example, when forming a deposited film, forms a deposited film while applying a parallel magnetic field from the outside in order to obtain good magnetic characteristics of the film to be formed. It relates to a sputtering apparatus.

[0002]

2. Description of the Related Art There is an increasing need in various fields for a sputtering apparatus as one of means for forming various materials into a deposited film. The sputtering method using this sputtering apparatus discharges an inert gas or the like, sputters a target with ions generated at this time, and deposits scattered sputter particles on a substrate disposed at a position facing the target. This is a method of forming a deposited film, and various types of sputtering devices using the same are considered depending on the application and are put into practical use.

For example, a sputtering device is also used for manufacturing a magnetic head of a hard disk device mounted on a personal computer or the like. In part of the manufacturing process,
In order to magnetize a film to be formed with a unidirectional magnetic field when forming the deposited film, the film is generally formed while applying a unidirectional magnetic field to the substrate surface. As a method of applying an external magnetic field to the substrate surface, a permanent magnet (for example, JP-A-6-207270 or JP-A-10-8196) is provided around the substrate.
No. 3) and a method of arranging an electromagnet (for example, Japanese Patent Application Laid-Open No. 3-87365) is known.

[0004]

However, the volume of the electromagnet is larger than that of the permanent magnet, and therefore, when the electromagnet is disposed in the vacuum container, the size of the vacuum container itself must be increased. A large amount of outgas is generated from the inner wall of the vacuum vessel and the components of the electromagnet. This lowers the ultimate vacuum and deteriorates the deposited film to be formed.

When an electromagnet is arranged in a vacuum vessel,
The temperature of the yoke material rises due to thermal effects in the process of sputtering. As a result, there is a problem that the magnetic permeability of the yoke material decreases and the magnetic field applied to the substrate surface becomes weak.
In this case, it is necessary to devise measures such as external adjustment so that the magnetic field intensity becomes constant in response to the rise in the temperature of the yoke material. Therefore, a deposited film having a constant magnetic field intensity cannot be formed.

In Japanese Patent Application Laid-Open No. 9-186141, a dipole ring magnet having a plurality of permanent magnets disposed on a rotary stage is provided outside a vacuum vessel, and the dipole ring magnet is rotated. For this reason, the permanent magnet is arranged along the entire circumference of the rotary stage in order to transmit a parallel magnetic field in one direction to the deposited film, so that the weight of the permanent magnet increases and a large power is required for the driving device. In addition, no consideration is given to simultaneously magnetizing a uniform deposited film on the wafer and a magnetic field parallel to the deposited film.

SUMMARY OF THE INVENTION An object of the present invention is to provide a sputtering apparatus capable of simultaneously applying a uniform deposited film to a workpiece and a magnetic field parallel to the deposited film.

[0008]

In order to achieve the above object, a sputter apparatus according to the present invention extends a rod from a substrate support plate to the outside of a vacuum vessel, connects an annular yoke to the rod, and connects the annular yoke to a substrate. An electromagnet is formed by surrounding a vacuum vessel outside the facing vacuum vessel so as to surround the vacuum vessel, and winding a pair of coils so as to face each other with the substrate sandwiched by an annular yoke. It consists in rotating the plate and the electromagnet at a synchronous speed.

[0009]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a sputtering apparatus according to an embodiment of the present invention will be described in detail with reference to FIG.

FIG. 1 is a sectional view of a sputtering apparatus showing one embodiment of the present invention. FIG. 2 is a cross-sectional view showing details of the magnetic field application mechanism 11. A vacuum chamber 1 forming a film forming chamber has a target electrode 2 fixed to a lower side of the inside thereof via an insulating material 3. A target 4 is mounted on the surface of the target electrode 2. The target 4 is made of a base material for forming a deposited film. An earth shield 5 is attached at a certain distance from the target 4. Target electrode 2
Is connected to a high-voltage power supply 6.

The substrate 7 is arranged so as to face the target 4, is conveyed through a substrate conveyance port 8, and is fixed to a substrate support 10 by a substrate chucking mechanism 9. The substrate transfer port 8 is open only during the transfer of the substrate, and is closed at other times.

A rod 10 A supported by a substrate support plate 10 in the vacuum vessel extends outside the vacuum vessel 1. A vacuum seal 14 is provided between the rod 10A and the vacuum vessel 1,
The inside of the vacuum container is kept airtight by a vacuum seal 14. The rotating mechanism 13 and the fixing jig 12 are attached to the rod 10A. The rotation mechanism 13 rotates the rod 10A. The fixing jig 12 surrounds the outer periphery of the vacuum vessel facing the substrate support plate 10 and the substrate 7 and the magnetic field applying mechanism 1 shown in FIG.
1 is provided.

The magnetic field applying mechanism 11 is configured as follows. That is, the annular yoke 17 is arranged outside the vacuum vessel 1 facing the substrate 7 and the substrate support plate 10 so as to surround the vacuum vessel 1. The annular yoke 17 forms an electromagnet 20A formed by winding a pair of coils 18 and 19 so as to face each other with the substrate 7 interposed therebetween. Therefore, the rotation drive unit 13
By rotating the rod 10A, the substrate support plate 10 and the electromagnet 20A can be rotated at the same speed.

Next, the substrate 7 is deposited by the sputtering apparatus of the present invention.
The case where the deposited film 7a is formed on the substrate will be described. The vacuum container 1 is provided with an injection valve 14 for injecting, for example, argon gas G. After the vacuum container 1 is evacuated from the exhaust device 16, argon gas G is injected from the injection valve 14, for example, at 0.1 Pa.
A degree of argon gas G is filled in the vacuum vessel 1. After injecting the argon gas G, the magnetic field application mechanism 11 is energized, and the rod 10A is rotated by the rotation mechanism 13, thereby rotating the substrate 7, the substrate support plate 10, and the electromagnet 20A at the same speed.

On the other hand, the high voltage power supply 6 is operated to apply a high voltage between the target 4 and the substrate 7. As a result, a glow discharge is generated between the target 4 and the substrate 7, and electrons generated by the glow discharge collide with the argon gas G in the discharge space to form an argon plasma. The argon positive ions in the argon plasma are accelerated in a potential drop region near the target 4 and collide with the surface of the target 4, and the deposited film particles constituting the target 4 are repelled from the target 4 and vaporized. The vaporized sputter particles adhere to the substrate 7 to form a deposited film 7a. Since a magnetic field is applied to the substrate 7 by the magnetic field applying mechanism 11 as shown in FIG.
When adhering to the sputtered particles, the lines of magnetic force 22 are transmitted to the sputtered particles in a parallel direction. As a result, a magnetic field in a parallel direction is magnetized also on the deposited film 7a formed on the surface of the substrate 7.

As described above, according to the present invention, by rotating the substrate 7 and the substrate support plate 10 and the magnetic field applying mechanism 11 synchronously by the rotating mechanism 13, a deposited film 7a having a uniform thickness can be formed on the entire substrate. At the same time, the lines of magnetic force in the parallel direction pass through the deposited film 7a, so that the deposited film 7a is magnetized in one direction.
Therefore, it is possible to produce a deposited film 7a having a uniform film thickness, a quality magnetized in one direction, and improved performance.

In the present invention, since the magnetic field applying mechanism 11 is disposed outside the vacuum vessel, the degree of vacuum in the vacuum vessel is reduced, the permeability of the annular yoke is reduced, and the magnetic field applied to the substrate surface is reduced. Problems such as weakening are eliminated, and the deposited film 7a
Is not deteriorated, and the performance of the deposited film 7a can be further improved.

The magnetic field applying structure 11 according to the present invention will be described with reference to the embodiment shown in FIG. That is, the magnetic field applying structure 11 has a rectangular-shaped annular yoke 17 arranged so that the center thereof coincides with the center of the substrate 7, and the annular yokes 17 are located at symmetrical positions via the substrate 7. Has been wound.
The coils 18 and 19 are provided with gaps 20 and 21, respectively. The cross-sectional shape of the annular yoke 17 is square with respect to the cross section of the rod 10A in a direction perpendicular to the rod 10A.

The two opposing coils 18 and 19 cause a magnetic flux Φ when current flows in a direction in which the magnetic flux collides with each other.
Occurs. This magnetic flux Φ cannot rotate in the annular yoke 17 and creates an N pole and an S pole respectively in the annular yoke 17 on which the coils 18 and 19 are not wound. Lines of magnetic force 22 from the N pole penetrate through the substrate 7 to the S pole, and magnetize the deposited film on the substrate 7 in a parallel direction.

The lines of magnetic force 22 tend to swell slightly toward the reference line 24 and transmit from the N pole to the S pole. Then, gaps 20 and 21 are provided, and magnetic poles S and N are newly created. Since the magnetic lines of force 22 are attracted to the magnetic poles S and N, and the swelling magnetic lines of force 22 are corrected so as to become parallel magnetic lines of magnetic force 22, the magnetic field distribution in the substrate 7 is generally parallel. Therefore, the deposited film is uniformly magnetized in the parallel direction, and the deposited film 7a with improved performance can be produced.

By setting the gaps 20 and 21 to specific lengths, a magnetic field with high parallelism can be applied to the entire region of the substrate 7. The length varies depending on the size of the annular yoke 17, and for example, the length of one side of the annular yoke 17 is 35.
The optimum gap length at 0 mm is 90 mm.

As described above, the magnetic field applying mechanism 11 of the present invention allows the magnetic flux lines 22 to pass through the substrate 7 in parallel and forms a good deposited film 7a magnetized in the parallel direction without being thermally affected in the process of sputtering. can do.

FIG. 3 shows another embodiment of the present invention. In the present embodiment, as shown in FIG.
This is a case where the chamfered portion 23A is applied to the corners of FIG. The reason for adopting such a shape is as follows. When the deposited film is formed, the substrate 7 is rotated in order to form a film with good uniformity. However, it is necessary to rotate the annular yoke 23 in synchronization with the substrate 7, in which case, the rotation is slightly smaller than in the embodiment of FIG. However, this is to reduce the turning radius. In the present embodiment, the directionality of the magnetic field applied to the substrate 7 is almost the same as in the embodiment of FIG. The annular yoke 23 may have a circular shape.

Further, according to the present invention, as shown in FIG. 4, an annular support plate 30 is provided on the outer peripheral side of the vacuum vessel 1 so as to surround the substrate 7 and the substrate support plate 10. And a pair of permanent magnets 31 and 32
Has been arranged. The left permanent magnet 31 and the right permanent magnet 32 have north and south poles.

Since the substrate 7, the substrate support plate 10, and the permanent magnets 31 and 32 are always rotating at the same speed by the rotating mechanism 13, the magnetic field lines from the N pole penetrate the substrate 7 in parallel with the S pole. In addition to achieving the same effects as those of the above-described embodiment, the present invention provides a substrate 7 and a substrate support plate 10 in comparison with the prior art (Japanese Patent Laid-Open No. Hei 9-186141) in which permanent magnets are arranged all around the rotary stage. Since the permanent magnets 31 and 32 are always rotating at the same speed, the magnetic field lines 22 in the parallel direction are always transmitted from the N-pole permanent magnet 31 via the substrate 7 to the S-pole permanent magnet 31. The magnets 31 and 32 may be arranged only on the annular support plate 30 facing the substrate 7. Therefore, in the present embodiment, the number of permanent magnets can be reduced as compared with the prior art, and the driving force of the rotating mechanism 13 can be reduced, so that the rotating mechanism 13 can be downsized. Although the annular support plate 30 is used in this embodiment,
Any support plate that supports the permanent magnets 31, 32 may be used.

[0026]

As described above, according to the sputtering apparatus of the present invention, it is possible to produce a deposited film having a uniform film thickness and a quality and performance uniformly magnetized.

[Brief description of the drawings]

FIG. 1 is a sectional view of a sputtering apparatus shown as an embodiment of the present invention.

FIG. 2 is a plan view showing details of a magnetic field application mechanism in FIG. 1;

FIG. 3 is a plan view of a magnetic field applying mechanism according to another embodiment of the present invention.

FIG. 4 is a plan view of a magnetic field applying mechanism according to another embodiment of the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Vacuum container, 2 ... Target electrode, 3 ... Insulation material, 4 ...
Target, 5 ... Earth shield, 6 ... High voltage power supply, 7 ...
Substrate, 7a: deposited film, 8: substrate transfer port, 9: substrate chucking mechanism, 10: substrate support, 11: magnetic field applying mechanism,
12: fixing jig, 13: rotating mechanism, 14: injection valve, 15
... Exhaust device, 17,23 ... Yoke material, 18,19 ... Coil, 20,21 ... Gap, 22 ... Line of magnetic force, 30 ... Ring support plate, 31,32 ... Permanent magnet.

 ──────────────────────────────────────────────────続 き Continuing from the front page (72) Inventor Satoshi Umehara 1-1-1, Kokubuncho, Hitachi City, Ibaraki Prefecture Inside the Semiconductor Manufacturing Equipment Promotion Division, Hitachi, Ltd. 1-chome F-term (reference) 4K029 BC06 CA05 DC00 JA02 in Semiconductor Manufacturing Equipment Promotion Division Hitachi, Ltd.

Claims (6)

[Claims] 1. A target made of a deposited film member and a substrate support plate are arranged opposite to each other in a vacuum vessel having a discharge gas, a voltage is applied between the target and the substrate, and a positive A sputtering method in which a deposited film on which sputtered particles are deposited from a target that has been bombarded by ions is formed on the substrate support plate, lines of magnetic force from an electromagnet provided in the vacuum vessel are transmitted through the deposited film, and the deposited film is magnetized. Wherein a magnetic field generating means is provided in the vacuum vessel facing the side surface of the substrate support plate, and the substrate support plate and the magnetic field generating means are rotated at the same speed when forming the deposited film, so that a uniform film thickness and unidirectional magnetization are provided. A sputtering method characterized by forming a deposited film. 2. A target made of a deposited film member and a substrate support plate are disposed opposite to each other in a vacuum vessel having a discharge gas, and a voltage is applied between the target and the substrate to form a positive electrode in the plasma by glow discharge. A sputter device that forms a deposited film on which sputtered particles are deposited from a target that has been bombarded by ions and that transmits magnetic flux lines from an electromagnet provided in the vacuum vessel to the deposited film to magnetize the deposited film, The substrate support plate is connected to a rod extending outside the vacuum container, and an annular yoke is disposed outside the vacuum container facing a side surface of the substrate support plate so as to surround the vacuum container. A sputtering apparatus, wherein a pair of coils are wound so as to face each other across a substrate, and the substrate support plate and the annular yoke are rotated at the same speed. 3. A target made of a deposited film member and a substrate support plate are arranged opposite to each other in a vacuum vessel having a discharge gas, and a voltage is applied between the target and the substrate to form a positive electrode in the plasma by glow discharge. A sputtering apparatus for forming a deposited film on which sputtered particles are deposited from a target that has been bombarded by ions, on the substrate support plate, transmitting magnetic field lines from an electromagnet provided in the vacuum vessel to the deposited film, and magnetizing the deposited film. In the above, the substrate support plate is connected to a rod extending outside the vacuum container, and an annular yoke is disposed outside the vacuum container facing a side surface of the substrate support plate so as to surround the vacuum container. A pair of coils are wound so as to face each other with the substrate support plate interposed therebetween, and a gap is provided in each of the pair of coils. 4. A target composed of a deposited film member and a substrate support plate are disposed opposite to each other in a vacuum vessel having a discharge gas, and a voltage is applied between the target and the substrate to generate a positive electrode in a plasma by glow discharge. A sputtering apparatus for forming a deposited film on which sputtered particles are deposited from a target that has been bombarded by ions, on the substrate support plate, transmitting magnetic field lines from an electromagnet provided in the vacuum vessel to the deposited film, and magnetizing the deposited film. In the above, the substrate support plate is connected to a rod extending outside the vacuum vessel, a support plate is arranged outside the vacuum vessel facing the substrate support plate, and faces the support plate with the substrate support plate interposed therebetween. A pair of permanent magnets, and rotating the substrate support plate and the support plate at the same speed. 5. The device according to claim 1, wherein the substrate support plate and the annular yoke or the support plate are connected to the rod, and the rod is provided with a rotation drive unit. Sputtering method and sputtering apparatus. 6. The sputtering apparatus according to claim 2, wherein the annular yoke has a square shape as viewed from a cross-sectional direction of the rod in a direction perpendicular to the rod.