TW201912828A - Sputtering cathode and sputtering apparatus for high density plasma formation - Google Patents

Abstract

The present disclosure provides a sputtering cathode and a sputtering apparatus for forming high density plasma that increases an intensity of a magnetic field formed on one surface of a sputtering target. In an exemplary embodiment, a sputtering cathode, which includes: a first magnet of which a magnetic pole having a first polarity faces a sputtering target; and a second magnet of which a magnetic pole having the same polarity as the first polarity faces a support member and which is provide in plurality that are successively arranged on both sides of the first magnet, and a sputtering apparatus are provided.

Description

Sputter cathode and high-density plasma forming sputtering device

BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to a sputtering cathode and a sputtering apparatus, and more particularly to a sputtering cathode and a high-density plasma forming method for increasing the strength of a magnetic field formed on one surface of a sputtering target. Sputtering device.

A sputtering device is used to apply a target film on the surface of a substrate (eg, a substrate). An electric field is applied between the sputter target and the substrate to create a plasma in the chamber. The ions emitted from the plasma collide with the sputtering target to separate (or extract) atoms of the target, and the separated atoms adhere to the surface of the substrate to form a film on the surface.

Since the magnetron sputtering device also uses a magnetic field in addition to the electric field, the sputtering rate of the sputtering device is increased. The magnetron sputtering device performs (or forms) a magnetic alignment behind the sputter target to create an electric field above the active surface of the sputter target. The electric field is adjacent to the active surface of the sputter target to trap ions in the plasma, and thus the density of the plasma is increased and the sputter rate is increased.

Here, since the owner of the magnetic lines of force emitted from the N pole enters the S pole adjacent to the N pole when the magnetic alignment is performed by a plurality of magnets alternately arranged based on their magnetic polarities, the sputtering target is The strength of the magnetic field formed on the active surface (or the magnetic field passing through the sputter target) is limited. Therefore, the sputtering target used for the sputter sputtering target must have a limitation in thickness.

Specifically, in the case of a ferromagnetic target such as cobalt, nickel, iron, or an alloy thereof, a magnetic field cannot be formed on the active surface of the sputtering target due to the characteristics of the ferromagnetic material, and the characteristics of the ferromagnetic material include high. Magnetic permeability (or magnetic transmittance) and low pass-through flux (PTF) (or magnetic leakage flux).

The above limitations on the thickness of the sputter target may shorten the life of the sputter target and in addition cause material waste and frequent replacement of the sputter target. In addition, the high magnetic permeability and leakage flux of ferromagnetic materials may cause limitations such as high impedance, low deposition rate, narrow corrosion grooves, poor film uniformity, and poor film performance.

Accordingly, there is a need for an improved sputtering target that increases the strength of the magnetic field and increases the sputtering efficiency of the ferromagnetic material as compared to typical magnetron sputtering devices. [Related Technical Documents] [Patent Literature] Korean Patent Publication No. 10-2005-0044357

The present invention provides a sputtering cathode and a sputtering apparatus for high-density plasma forming which can increase the strength of a magnetic field on one surface of a sputtering target by arranging a plurality of magnets.

According to an exemplary embodiment, a sputtering cathode includes: a sputtering target made of a target; a plurality of magnets disposed at a rear surface side of the sputtering target; and a support member to support the plurality of magnet. Here, the plurality of magnets include: a first magnet having a magnetic pole having a first polarity facing the sputtering target; and a second magnet having a second magnet A magnetic pole of the same polarity faces the support member and is provided in plurality in such a manner as to be sequentially arranged on both sides of the first magnet.

The target may be a ferromagnetic material.

The support member may be made of a magnetic material.

The sputtering cathode may further include a gap adjusting member for adjusting a gap between the plurality of magnets and the sputtering target.

The support member may have a strip shape or a tubular shape extending in a first direction, and the plurality of magnets may be arranged on an outer circumference of the support member along an outer circumference of the support member.

The second magnet may be sequentially arranged along the outer circumference of the support member from one side of the first magnet to the other side of the first magnet.

The sputtering target may be a cylindrical target extending in the first direction, and the plurality of magnets and the support member may be disposed in an inner space of the sputtering target.

The sputter cathode may further include a first driving component for axially rotating the sputter target relative to a central axis of the sputter target.

The support member may include: a plate-shaped support plate disposed to face the sputtering target and having an axis in a first direction; and a sidewall member protruding toward the sputtering target on a circumference of the support plate .

The sputter target can be a plate-shaped sputter cathode.

The sputtering cathode may further include a second driving member for moving the plurality of magnets and the support member in a second direction crossing the first direction.

Each of the plurality of magnets may extend in the first direction or include a plurality of magnetic sheets arranged in a row in the first direction.

The sputter cathode may further include a connecting magnet for forming a closed loop to surround the first magnet by connecting at least one pair of second magnets that are symmetric with respect to the first magnet.

According to another exemplary embodiment, a sputtering apparatus includes: a sputtering cathode according to an exemplary embodiment; a substrate supporting member disposed to be opposite to the sputtering target; and a chamber, the sputtering cathode and the The substrate support member is disposed in the chamber.

The first magnet may be disposed opposite to the substrate supporting member.

Hereinafter, specific embodiments will be explained in more detail with reference to the accompanying drawings. However, the invention may be embodied in different forms and should not be construed as limited to the embodiments described herein. Rather, the embodiments are provided so that this disclosure will be thorough and complete, and the scope of the invention will be fully conveyed by those skilled in the art. The same reference numbers are used throughout the drawings to refer to the same elements. The dimensions of the layers and regions may be exaggerated in the various figures for clarity.

FIG. 1 is a cross-sectional view showing a sputtering cathode according to an exemplary embodiment.

Referring to FIG. 1, a sputtering cathode 100 according to an exemplary embodiment may include: a sputtering target 110 made of a target; a plurality of magnets 120 disposed at a rear surface side of the sputtering target 110; and a support member 130, The plurality of magnets 120 are supported. Here, the plurality of magnets 120 may include: a first magnet 121 having a magnetic pole having a first polarity facing the sputtering target 110; and a second magnet 122 having a first and second magnet 122 Magnetic poles of the same polarity are faced to the support member 130 and are arranged in plurality on both sides of the first magnet 121.

The sputtering target 110 may be made of a target and have one surface facing the substrate 10 and a rear surface facing the one surface (ie, the opposite surface of the one surface). Here, the one surface may be an active surface on which a target is sputtered, and the sputtering target 110 may be mounted such that the one surface (ie, the active surface) faces the substrate 10 to provide the target toward the substrate 10. Material (ie deposited material). Here, the target may be attached (or coupled) to the outer wall of the backing plate 111 made of copper (Cu) or the like, or may be disposed on the entire area or a partial area of the circumferential surface of the backing plate 111. . Although the target may include gold (Au), silver (Ag), platinum (Pt), nickel (Ni), and copper (Cu), the embodiment is not limited thereto. For example, owners of metals, oxides, and alloys that are currently known or available can be used.

The plurality of magnets 120 may be disposed on the rear surface side of the sputtering target 110 and supported by the support member 130. Here, when the sputtering target 110 is a cylindrical target, the rear surface may be the inner surface (or inner surface) of the sputtering target 110, and the rear surface side may represent the rear surface direction (or any position in the rear surface direction) . The plurality of magnets 120 may form a magnetic field, and characteristics (eg, strength, shape, etc.) of the magnetic field may vary according to the arrangement of the plurality of magnets 120. According to an exemplary embodiment, even if the magnet 120 has a low strength by the arrangement of the plurality of magnets 120, a strong magnetic field can be formed on one surface of the sputtering target 110.

Further, each of the plurality of magnets 120 may extend in a first direction (eg, a longitudinal direction of the sputtering target) or may include a plurality of magnetic sheets arranged in a row in a first direction. Sputter target 110 can have a width and a length. The width may represent a side of a short length in a direction crossing each other, and the length may represent a long length side in a direction crossing each other. Here, when the directions crossing each other have the same length, one of the two directions may be the width and the other may be the length. Here, the longitudinal direction may represent a direction parallel to the length. Each of the magnets 120 may have a line shape extending in the first direction, or may include a plurality of magnet pieces (or unit magnets) arranged in a line in the first direction. In this case, the magnetic field can be formed in a wide area and uniformly formed in the first direction. When the plurality of magnets 120 extend in the longitudinal direction of the sputtering target 110, in the case where the plurality of magnets 120 scan the sputtering target 110, the scanning distance of the plurality of magnets 120 may be shortened.

In addition, the plurality of magnets 120 may include: a first magnet 121 having a magnetic pole having a first polarity facing the sputtering target 110; and a second magnet 122 having a first polarity A magnetic pole of the same polarity faces the support member 130 and is provided in plurality in such a manner as to be sequentially arranged on both sides of the first magnet 121.

The first magnet 121 may have a magnetic pole (eg, an S pole) having a first polarity, facing a magnetic pole (eg, an N pole) of the sputtering target 110, and having a second polarity opposite to the first polarity, facing the support member 130 . Here, the plurality of first magnets 121 may be arranged in a sequential (or sequential) manner to form a first magnet group.

The second magnet 122 may have a magnetic pole having the same polarity as the first polarity, facing the support member 130, and a plurality of second magnets may be arranged in sequence (or sequentially) on both sides of the first magnet 121. That is, the magnetic poles of the plurality of second magnets having the same polarity as the first polarity may be located on both sides of the first magnet 121 in a sequential manner, which is opposite to the first magnet 121. Here, when the first magnet 121 forms a first magnet group, the plurality of second magnets 122 may be sequentially arranged on both sides of the first magnet group. Here, the above "sequential arrangement" may represent a case of sequentially arranging while being in contact with each other and a case of sequentially arranging while being spaced apart from each other. The second magnet 122 may be aligned while being in contact with the first magnet 121 or spaced apart from the first magnet 121. Further, the second magnets 122 may be symmetrically arranged on each of the two sides of the first magnet 121. In this case, the magnetic field formed in front of the first magnet 121 may be equalized at both sides of the first magnet 121, and thus sputtering of the sputtering target 110 may be performed uniformly.

In the related art, since the first magnet 121 and the second magnet 122 are alternately arranged, the owner of the magnetic lines of force emitted from the N pole (for example, the magnetic pole having the first polarity) enters the S pole adjacent to the N pole. (For example, a magnetic pole having a second polarity), and thus a magnetic field formed on one surface of the sputtering target 110 (or a magnetic field passing through the sputtering target) has a limit in strength. Therefore, the thickness of the sputtering target 110 (the thickness at which the sputtering target 110 can be sputtered) is limited.

However, according to an exemplary embodiment, when a plurality of second magnets 122 are sequentially disposed on both sides of the first magnet 121, since the owner of the magnetic lines of force emitted from the plurality of second magnets 122 enters the The owner of one of the magnets 121 or the magnetic lines of force entering the plurality of second magnets 122 is emitted from the first magnet 121, and thus the respective magnetic lines of force are in the area around the first magnet 121 and the first magnet 121 (or The combination is performed at the peripheral region or at the peripheral region of the sputtering target 110. Therefore, the magnetic flux density at the peripheral region of the first magnet 121 and the first magnet 121 (ie, the peripheral region of the sputtering target) can be increased. Therefore, the intensity of the magnetic field formed on one surface of the sputtering target 110 can be increased, and the intensity of the magnetic field formed in the direction toward the substrate 10 when the first magnet 121 faces the substrate 10 can be increased. Therefore, the thickness of the sputtering target 110 (the thickness at which the sputtering target 110 can be sputtered) can be increased beyond the thickness of the related art sputtering target.

The support member 130 may support the plurality of magnets 120, or the plurality of magnets 120 may be supported by the support member 130 while being attached or fixed to the support member 130. Here, the support member 130 may be a yoke.

Further, the support member 130 may be formed of a magnetic material. For example, the support member 130 may be made of magnetic metal, magnetically attach and support the plurality of magnets 120, and have a strength that withstands the weight of the plurality of magnets 120 even when one end of the magnet 120 is fixed. When the support member 130 is made of a magnetic material, the plurality of magnets 120 may magnetically attach the plurality of magnets 120 only by a separate process in which the plurality of magnets 120 are not coupled or combined. It is supported by the support member 130 to the support member 130. Here, a separate coupling structure may be provided or a bonding process may be provided as necessary. Further, since the magnetic support member 130 blocks the magnetic lines of force toward the support member 130 by its magnetism, the magnetic field formed at the side of the support member 130 (or the peripheral region of the support member) can be weakened.

The target may be a ferromagnetic material, and the ferromagnetic material may include cobalt, nickel, iron, and alloys thereof. In the related art, due to the characteristics of the ferromagnetic material (ie, high magnetic flux (or permeability) and low through flux (PTF) (or leakage flux), when using a ferromagnetic target, through the splash The magnetic field of the plating target 110 (i.e., the conduction of the magnetic field with respect to the sputtering target) or the magnetic field formed on one surface of the sputtering target 110 may be reduced to be lower than when a non-ferromagnetic target is used. Therefore, the thickness of the sputtering target 110 may be further limited.

However, according to an exemplary embodiment, since the plurality of second magnets 122 are sequentially arranged on the both sides of the first magnet 121, the owner of the plurality of second magnets 122 is connected to the first by magnetic lines of force A magnet 122, and the magnetic lines of force are combined at a peripheral region of the first magnet 121 and the first magnet 121 (ie, a surrounding region of the sputtering target). Therefore, the magnetic flux density at the peripheral region of the first magnet 121 and the first magnet 121 can be increased. Therefore, since the intensity of the magnetic field formed on one surface of the sputtering target 110 can be increased, the thickness of the sputtering target 110 (the thickness at which the sputtering target 110 can be sputtered) can be increased even if a ferromagnetic target is used. Larger than the thickness of the sputtering target of the related art.

Further, the support member 130 may have a bar shape, a strip shape, a tube shape, or a thin tube shape extending in the first direction, and the plurality of magnets 120 may be arranged along the outer circumference (or outer periphery) of the support member 130 to the support member 130 on the outer circumferential surface. The support member 130 may have a strip shape such as a stick shape or a hollow tube shape extending in the first direction (ie, the longitudinal direction), and has an outer circumferential surface (or a peripheral surface) that may be supported by the plurality of magnets 120. Further, the support member 130 may have a cross section (i.e., a cross section in the width direction) having various shapes such as a circle, an oval, and a polygon (for example, a hexagon and an octagon).

Further, a cooling member (not shown) may be installed inside the support member 130. A cooling member (not shown) may be installed at the inside of the support member 130 (for example, a through-hole of the tube). The cooling component cools the sputter target 110 exposed to the plasma heat generated during the sputtering process and blocks heat from being conducted to the support member 130 and the plurality of magnets 120. Therefore, the target can be prevented from being melted and layered due to the heat of the plasma generated during the sputtering process, and the magnet 120 can be prevented from being demagnetized. Therefore, the sputtering process can be performed stably. For example, a cooling member (not shown) may be cooled by circulating a coolant, and a through hole of the tubular support member 130 may serve as a coolant flow path.

The plurality of magnets 120 may be supported by the outer circumferential surface of the support member 130 and arranged along the outer circumference of the support member 130. Here, at least a portion of the plurality of magnets 120 may be spaced apart from each other, and magnetic poles facing the outside (ie, magnetic poles not facing the support member) may be spaced apart according to the arrangement angle of the magnets 120. That is, the plurality of magnets 120 may be arranged on the outer circumferential surface of the support member 130 at different angles from each other, and the plurality of magnets 120 may be arranged perpendicular to the outer circumferential surface of the support member 130. For example, when the support member 130 has a shape of a circular strip (or a cylinder), the plurality of second magnets 122 may be perpendicular to the support member 130 with the set position of the first magnet 121 as a reference point (0°). The circumferential surfaces are arranged. Further, when the support member 130 has a shape of a polygonal strip (or a polygonal cylinder), the plurality of magnets 120 may be arranged on a plurality of outer circumferential surfaces (for example, arranged in eight surfaces in the case of an octagon), The plurality of outer circumferential surfaces are divided based on an angle. Here, the plurality of magnets 120 may be arranged on outer circumferential surfaces different from each other, and some of the plurality of magnets 120 may be arranged on the same outer circumferential surface while being spaced apart from each other. A yoke may be mounted on a portion of the plurality of magnets 120 spaced apart such that magnetic lines of force are not emitted to the space between the magnets 120.

Here, the second magnet 122 may be sequentially arranged from one side of the first magnet 121 to the other side of the first magnet 121 along the outer circumference of the support member 130. That is, the plurality of magnets 120 may be arranged along the entire outer circumference of the support member 130, and the plurality of second magnets 122 may treat the one side of the first magnet 121 and the other of the first magnet 121 The sides are connected to each other to form a closed curve (or closed loop) along the outer circumference. Since the magnetic lines of force emitted from the N pole tend to enter into the adjacent S poles, when the second magnets 122 are not sequentially arranged from the one side of the first magnet 121 to the other side of the first magnet 121 The magnetic flux that is away from the second magnet 122 of the first magnet 121 escapes (or leaks) to the outermost second magnet 122 disposed at one side of the first magnet 121 and the most disposed at the other side of the first magnet 121 The space between the outer second magnets 122 is connected to the outermost second magnet 122. Therefore, the magnetic lines of force connected to the first magnet 122 are reduced, and the magnetic flux density at the peripheral regions of the first magnet 121 and the first magnet 121 is limited and cannot be increased.

However, when the second magnet 122 is sequentially arranged from the one side of the first magnet 121 to the other side of the first magnet 121, the space to which the magnetic lines of the second magnet 122 can escape can be minimized to make the connection The lines of magnetic force between the second magnets 122 are minimized. Therefore, since more magnetic lines of force are concentrated on the peripheral regions of the first magnet 121 and the first magnet 121, the magnetic flux density at the peripheral regions of the first magnet 121 and the first magnet 121 can be effectively improved. Further, since the magnetic lines of force may increase as the magnet 120 increases, and the second magnet 122 is arranged in order from the one side of the first magnet 121 to the other side of the first magnet 121 The magnet 122 is more than the second magnet 122 arranged when the second magnet 122 is not sequentially arranged from the one side of the first magnet 121 to the other side of the first magnet 121, so that more magnetic lines of force can be connected to The first magnet 121 is configured to concentrate the magnetic field on the peripheral regions of the first magnet 121 and the first magnet 121.

When the plurality of second magnets 122 sequentially arranged do not connect the one side of the first magnet 121 to the other side of the first magnet 121, since the yoke is mounted instead of the magnet 120, the magnetic lines of force can be prevented The outermost second magnets 122 escape from each other.

Further, the sputtering target 110 may have a cylindrical target extending in the first direction, and the plurality of magnets 120 and the support member 130 may be disposed in an inner space of the sputtering target 110. Here, the magnetic pole of the second magnet 122 having the same polarity as the second polarity (hereinafter referred to as the second polarity) may face the sputtering target 110. The sputtering target 110 may be a cylindrical target extending in the first direction, and may be made of a material (ie, a deposition material) of a film to be formed on the substrate 10. For example, when the sputtering apparatus 200 manufactures thin film electromagnetic interference (EMI), the sputtering target 110 may be made of one of copper and stainless steel (SUS) and use each of the two materials. A multilayer film is formed.

The cylindrical target has a use efficiency of approximately 50% to 60% (this is relatively higher than the use efficiency of the plate type target), and has various advantages such as a low arc occurrence rate and a high deposition speed, thereby being widely used. Physical deposition method for large substrates.

Here, the plurality of magnets 120 and the support member 130 may be disposed in an inner space of the sputtering target 110. Further, the plurality of magnets 120 may be arranged to have a polar axis in a direction parallel to a tangent to a surface (or outer surface) of the sputtering target 110. Here, the polar axis may represent a line passing through the N pole and the S pole of the magnetic poles which are the both ends of the magnet 120. The plurality of magnets 120 arranged in the sputtering target 110 may form a magnetic field from the inside of the sputtering target 110 in the external direction to supply the target to the substrate 10 disposed outside the sputtering target 110.

In addition, the cylindrical sputtering target 110 made of a ferromagnetic target can block a magnetic field (or magnetic lines of force) that does not face the substrate 10, and collects the first magnetic flux due to the high magnetic flux and low through flux of the ferromagnetic material. The magnetic field (or magnetic line of force) of the magnet 121. Therefore, the magnetic lines of force may be further concentrated on the peripheral regions of the first magnet 121 and the first magnet 121, and the magnetic flux density of the surrounding regions of the first magnet 121 and the first magnet 121 may be higher than when the non-ferromagnetic target is used. And the magnetic flux density of the surrounding area of the first magnet, and the magnetic field can be concentrated toward the substrate 10 to increase the strength of the magnetic field to be formed toward the substrate 10. Therefore, the thickness of the sputtering target 110 which can be sputtered using the ferromagnetic target can be further increased than the thickness of the sputtering target of the related art.

In the case of a sputtering target 110 made of a ferromagnetic target, magnetic lines of force may flow on the sputtering target 110 (or along the sputtering target 110) due to the ferromagnetic material, and magnetic lines of force may be connected in a fast and stable manner. To (or arrive at) the first magnet 121.

FIG. 2 is a diagram for explaining axial rotation of a sputtering target according to an exemplary embodiment.

Referring to FIG. 2, the sputter cathode 100 according to an exemplary embodiment may further include a first driving member 140 that axially rotates the sputter target 110 with respect to a central axis of the sputter target 110. The first driving component 140 may axially rotate the sputter target 110 with respect to a central axis of the sputter target 110 and include a combination of an electric motor, a belt, and the like. Since the drive shaft connected to the motor to receive the driving force is connected to the backing plate 111 of the sputtering target 110, the sputtering target 110 can be axially rotated by the first driving member 140.

When the cylindrical sputtering target 110 is axially rotated with respect to the central axis of the cylindrical sputtering target 110, the sputtering region is sequentially replaced by the new region due to the axial rotation of the sputtering target 110, and thus the target 110 is sputtered. The entire surface of the target can be used evenly. Therefore, the use efficiency of the sputtering target 110 can be improved, the frequency of use of the cylindrical sputtering cathode 100 can be increased, and the deposition process by the sputtering apparatus 200 can be efficiently performed.

FIG. 3 is a diagram illustrating the intensity of a magnetic field based on the thickness of a sputtering target according to an exemplary embodiment. The thickness of the sputtering target is 7 mm (mm) in (a) of FIG. 3, 6 mm in (b) of FIG. 3, and 5 mm in (c) of FIG. 3, in (d) of FIG. 4 mm in the middle, 3 mm in (e) of Fig. 3, and 2 mm in (f) of Fig. 3.

Referring to FIG. 3, as the thickness of the sputtering target 110 decreases, the strength of the magnetic field increases. In the related art, since the magnetic field is formed only by the magnet 120 disposed in the direction (or front) of the substrate 10, the strength of the magnetic field formed on one surface of the sputtering target 110 is limited. Therefore, the thickness of the sputtering target 110 for sputter sputtering target 110 is limited. However, according to an exemplary embodiment, since the owner of the magnetic lines of force emitted from the plurality of second magnets 122 enters into the first magnet 121 or enters the magnetic lines of force in the plurality of second magnets 122 The owner is emitted from the first magnet 121, so the magnetic lines of force can be combined at the peripheral regions of the first magnet 121 and the first magnet 121, and thus the magnetic fluxes of the surrounding regions of the first magnet 121 and the first magnet 121 The density can be increased. Therefore, the strength of the magnetic field formed on one surface of the sputtering target 110 can be increased, and the thickness of the sputtering target 110 (thickness at which the sputtering target 110 can be sputtered) can be increased to exceed the sputtering technique of the related art. The thickness of the target.

Further, in the related art, when the sputtering target 110 made of a ferromagnetic target is used, a magnetic field cannot be formed at a thickness of 5 mm. In the case of a thickness of 4 mm, only a small magnetic field is formed on one surface of the sputtering target 110. Further, in the case of a thickness of 3 mm, although a certain magnetic field is formed on one surface of the sputtering target 110, the magnetic field formed on one surface of the sputtering target 110 is insufficient to sputter ferromagnetic Target.

FIG. 3 is a graph showing changes in the intensity of the magnetic field as a function of the thickness of the sputtering target 110 made of the ferromagnetic target. The sputtering cathode 100 according to an exemplary embodiment may form a small magnetic field on one surface of the sputtering target 110 even in the case of a thickness of 8 mm, and may also be formed on one surface of the sputtering target 110. A magnetic field sufficient to sputter a ferromagnetic target. Further, in the case of a thickness of 4 mm or less, in general, a magnetic field having a strength greater than that necessary for sputtering can be formed on one surface of the sputtering target 110.

FIG. 4 is a cross-sectional view illustrating a plate-shaped sputtering target according to an exemplary embodiment.

Referring to FIG. 4, the sputtering target 110 may have a plate shape. Even in the case of the plate-shaped sputtering target 110, when the first magnet 121 faces the sputtering target 110, since the owner of the plurality of second magnets 122 is connected to the first magnet 121 by magnetic lines of force The magnetic lines of force are combined at the peripheral regions of the first magnet 121 and the first magnet 121, so that the magnetic flux density at the peripheral regions of the first magnet 121 and the first magnet 121 can be increased. Therefore, the intensity of the magnetic field formed on one surface of the sputtering target 110 can be increased, and the strength of the magnetic field that can be formed in the direction of the sputtering target 110 (ie, the direction of the substrate) can be increased. Therefore, the thickness of the sputtering target 110 (the thickness at which the sputtering target 110 can be sputtered) can be increased beyond the thickness of the related art sputtering target.

FIG. 5 is a diagram for explaining movement of the plurality of magnets according to an exemplary embodiment.

Referring to FIG. 5, the sputtering cathode 100 according to an exemplary embodiment may further include moving the plurality of magnets 120 and the second driving member 150 of the support member 130 in a second direction crossing the first direction. The second driving part 150 may move the plurality of magnets 120 and the support member 130 along the sputtering target 110 in a second direction crossing the first direction. Here, the second driving member 150 includes a combination of an electric motor, a belt, and the like. For example, as shown in FIG. 5, the second driving part 150 may have a rail shape, and move the plurality of magnets 120 and the supporting member 130 along the rail in the second direction, and repeat in the second direction. The plurality of magnets 120 and the support member 130 are moved.

Since the entire area of the sputtering target 110 is scanned by the plurality of magnets 120 or the first magnets 121 when the plurality of magnets 120 and the support member 130 are moved in the second direction, the entire area of the sputtering target 110 can be Use evenly. That is, the second driving part 150 may move the plurality of magnets 120 and the support member 130 in the second direction to uniformly use the target of the entire region of the sputtering target 110.

6 is a view for explaining a gap adjustment between the plurality of magnets and a sputtering target according to an exemplary embodiment, (a) of FIG. 6 illustrates a cylindrical sputtering target, and (b) of FIG. A plate-shaped sputtering target is shown.

Referring to FIG. 6 , the sputtering cathode 100 according to an exemplary embodiment may further include a gap adjusting member 160 for adjusting a gap between the plurality of magnets 120 and the sputtering target 110 . The gap adjusting member 160 may adjust a gap between the plurality of magnets 120 and the sputtering target 110 and a gap between the sputtering target 110 and the first magnet 121 of the plurality of magnets 120. Since the magnetic field formed by the plurality of magnets 120 is formed at the peripheral region 121 of the first magnet 121 (or in front of the first magnet 121), the splash can be adjusted according to the gap between the sputtering target 110 and the first magnet 121. The intensity of the magnetic field on one surface of the plating target 110.

Since the sputtering target 110 having a reduced thickness is used and since the thickness of the sputtering target 110 is reduced, the strength of the magnetic field on one surface of the sputtering target 110 is increased. Therefore, the amount of the sputtering target (i.e., the amount deposited on the substrate) may vary depending on the usage time of the sputtering target 110 (i.e., the thickness of the sputtering target). Therefore, the thickness of the film deposited on the substrate 10 may vary depending on the value of the thickness of the sputtering target 110 for depositing the film. Further, since the magnitude (or area) of the magnetic field increases according to the strength of the magnetic field as the thickness of the sputtering target 110 decreases, the magnetic field may reach (or reach) to the substrate 10, and the magnetic field that is reached may affect ( Damage to the substrate 10. Therefore, the electromagnetic elements (eg, electronic circuits) of the substrate 10 may be affected (or damaged).

Therefore, when the gap between the first magnet 121 and the sputtering target 110 is adjusted according to the thickness (or time of use) of the sputtering target 110, the intensity of the magnetic field on one surface of the sputtering target 110 can be adjusted, and sputtering is performed. The intensity of the magnetic field on one surface of the target 110 can be uniformly adjusted. Therefore, since the amount of the sputtering target can be uniform, the thickness of the film deposited on the substrate 10 by the same sputtering target 110 can be equal (or uniform) regardless of the use time of the sputtering target 110. Further, by adjusting the gap between the first magnet 121 and the sputtering target 110, the magnetic field can be prevented from reaching the substrate 10, and damage on the substrate 10 due to the arrived magnetic field can be prevented.

FIG. 7 is a view for explaining a plate-shaped support member according to an exemplary embodiment.

Referring to FIG. 7, the support member 130 may include a plate-shaped support plate 131 disposed opposite to the sputtering target 110 and having a first direction axis, and a side wall 132 protruding toward the sputtering target 110 on the circumference of the support plate 131.

The plate-shaped support plate 131 may be disposed opposite to the sputtering target 110 and disposed to face the rear surface of the sputtering target 110, and the plurality of magnets 120 may be supported on a surface opposite to the rear surface of the sputtering target 110 on. Further, the plate-shaped support plate 131 may have a first direction axis, and the first direction axis may be a main axis among the respective axes having different lengths and crossing each other (ie, the longest linear distance on the surface of the support plate), Or one of the respective axes that intersect each other when the lengths of the respective axes are equal to each other. Here, the sputtering target 110 may have a plate shape, the plurality of magnets 120 may be arranged in parallel with each other in the first direction, and the plurality of second magnets 122 may be on both sides of the first magnet 121 The second direction in which the first direction intersects is sequentially arranged, and the polarities of the plurality of second magnets 122 are opposite to the polarity of the first magnet 121.

The side wall 132 may be provided to the circumference of the support plate 131 and protrude toward the sputtering target 110. The side wall 132 can be used to block magnetic field lines away from the second magnet 122 of the first magnet 121 from escaping the side portions of the sputtering target 110 and the plate-shaped support plate 131. Therefore, the magnetic field can be concentrated on one surface of the plate-shaped sputtering target 110 disposed in front of the plurality of magnets 120 (ie, in front of the first magnet).

In the case of the sputtering target 110 made of a ferromagnetic target, the thickness of the support portion 131 and the side walls 132 may be greater than the thickness of the sputtering target 110. In the case of a sputtering target 110 made of a ferromagnetic target, since the magnetic field is conducted through the support plate 131 and/or the side wall 132 having a relatively low magnetic permeability, not due to high magnetic permeability and low through flux The sputtering target 110 is conducted, so that the magnetic lines of the second magnet 122 away from the first magnet 121 can be prevented from escaping to the support plate 131 and/or the side wall 132. However, when the thickness of the support plate 131 and the side wall 132 is larger than the thickness of the sputtering target 110, since the magnetic permeability which is relatively lower than the magnetic permeability of the ferromagnetic material can be compensated, it is used to block away from the first magnet 121. The effectiveness of the support plates 131 and/or sidewalls 132 from which the magnetic lines of the second magnet 122 escape may be improved such that the magnetic field can be concentrated in front of the first magnets 121.

Further, in the case of the sputtering target 110 made of a ferromagnetic target, the support member 130 may be made of a ferromagnetic material. Here, the ferromagnetic material forming the support member 130 cannot be sputtered. Since the ferromagnetic material has a high magnetic permeability, the magnetic field can be prevented from being conducted to the support member 130 due to the magnetic permeability of the support member 130 which is relatively lower than the magnetic permeability of the sputter target 110, and the magnetic field can be concentrated on the first A magnet 121 is in front of it.

The sputtering cathode 100 according to an exemplary embodiment may further include a connection magnet (not shown) that forms a closed loop by connecting at least one pair of second magnets 122 that are symmetrical with each other with respect to the first magnet 121 To surround the first magnet 121. A connecting magnet (not shown) may connect a pair of second magnets 122 that are symmetrical to each other with respect to the first magnet 121. The connecting magnet may form a closed loop that surrounds the first magnet 121 and the pair of second magnets 122 connected as described above, or may connect only a pair of second magnets of the plurality of pairs of second magnets 122 122 (or a pair of second magnets) to form a closed loop. Here, a connection magnet (not shown) may be supported by the support member 130, having a magnetic pole having the same polarity as the first polarity facing the support member 130, such as the second magnet 122, or including the plurality of magnets 120 as described Multiple unit magnets.

When the magnetic poles having the same polarity are disposed such that the magnet opposite to the first magnet 121 does not form a closed loop around the first magnet 121, since the magnetic lines of force can escape to each of the first magnet 121 and the second magnet 122 End, so the magnetic field can be concentrated on the end of each of the first magnet 121 and the second magnet 122 (ie, the end of the sputter cathode or the sputter target). Therefore, since sputtering is effectively performed on the end portion of the sputtering target 110 to a higher extent than is effectively performed on other portions, uniform deposition cannot be performed over the entire surface of the substrate 10, and sputtering of the target 110 is performed. Targets throughout the area cannot be used evenly.

However, when a closed loop is formed around the first magnet 121 by connecting at least one pair of the pair of second magnets 122 (not shown), the magnetic flux can be prevented from escaping to the first magnet 121 and the second The end of each of the magnets 122 (or the end of the sputtering cathode) prevents the magnetic field from being concentrated on the end of the sputter cathode 100 (i.e., the end of the sputter target). Therefore, it is possible to prevent the sputtering from being effectively performed on the end portion of the sputtering target 110 to a higher extent than that effectively performed on other portions, performing uniform deposition over the entire surface of the substrate 10, and sputtering the target 110 The target of the entire area can be used evenly.

Here, in the case of the cylindrical sputtering target 110, at least the second magnets 122 disposed at both sides of the first magnets 121 of the plurality of second magnets 122 may be connected by magnets (not shown). Connected to form a closed loop for surrounding the first magnet 121. In this case, the connection magnet (not shown) can be easily provided, and the closed loop can be easily and stably formed by the plurality of second magnets 122 and the connection magnets (not shown).

FIG. 8 is a cross-sectional view showing a sputtering apparatus according to another exemplary embodiment.

The sputtering apparatus according to another exemplary embodiment will be explained in more detail, and the content overlapping with the contents set forth above for the sputtering cathode according to the exemplary embodiment will be omitted.

The sputtering apparatus 200 according to another exemplary embodiment may include: a sputtering cathode 100 according to an exemplary embodiment; a substrate supporting member 210 disposed to be opposite to the sputtering target 110; and a chamber 220, sputtering the cathode 100 And the substrate supporting member 210 is disposed in the chamber 220.

The sputter cathode 100 may be a sputter cathode 100 according to an exemplary embodiment, and may increase the strength of a magnetic field formed on one surface of the sputter target 110. Therefore, a high-density plasma can be formed on one surface of the sputtering target 110 (or substrate).

The substrate supporting member 210 may be disposed opposite to the sputtering target 110, support the substrate 10, and disposed in the chamber 220. The substrate supporting member 210 can enable the substrate 10 to not move or vibrate while performing a deposition process. To this end, the substrate supporting member 210 may include a chuck (not shown) or an electrostatic chuck that uses electrostatic force to achieve adsorption between the substrate supporting member 210 and the substrate 10. When the electrostatic chuck is used, even if the substrate supporting member 210 faces the sputtering cathode 100 located under the substrate supporting member 210 from the upper portion of the chamber 110, the substrate supporting member 210 can prevent the substrate 10 from falling down and may not hide the substrate 10. The deposition surface. Further, the substrate supporting member 210 may be made of a material having high heat resistance and high wear resistance to prevent denaturalization and damage due to heat during the deposition process.

The sputtering cathode 100 and the substrate supporting member 210 may be housed in the chamber 220 and provide a space for depositing the substrate 10. Here, the interior of the chamber can be sealed and maintained in a high vacuum state during the deposition process. To this end, an exhaust unit (not shown) may be provided to the chamber 220, and a vacuum pump (not shown) may be installed in the exhaust unit. Therefore, when a vacuum pressure is generated from the vacuum pump, the inside of the chamber 220 can maintain a high vacuum state. Additionally, an inlet (not shown) for loading the substrate 10 into the chamber 220 may be defined in one of the sidewalls of the chamber 220, and the other side wall of the chamber 220 may be defined to unload the substrate 10 from the chamber 220. Exit (not shown). Each of a separate gate valve (not shown) can be provided to the inlet and outlet.

Further, the first magnet 121 may be disposed opposite to the substrate supporting member 210. That is, the first magnet 121 may be disposed opposite to the substrate 10. Since the magnetic lines of force are combined at the peripheral regions of the first magnet 121 and the first magnet 121 to increase the magnetic flux density at the peripheral regions of the first magnet 121 and the first magnet 121, at the peripheral region of the first magnet 121 (or A strong magnetic field can be formed in front of the first magnet 121. Therefore, when the first magnet 121 faces the substrate 10, a magnetic field sufficient for sputtering in the direction of the substrate 10 can be formed, and the intensity of the magnetic field formed in the direction of the substrate 10 can be increased.

The sputtering apparatus 200 according to an exemplary embodiment may further include a power supply part 170 that supplies power to the sputtering target 110. The power supply component 170 can supply (or apply) power to the sputtering target 110 and apply direct current (DC) or alternating current (AC) (eg, radio frequency (RF)) to the sputtering target 110. Here, a power source may be applied to the backing plate 111 of the sputtering target 110, and the sputtering target 110 may form a cathode. For example, the chamber 220 or the substrate supporting member 210 may be grounded, the cathode may be formed to the sputtering target 110 by applying a negative (-) DC power to the sputtering target 110, and the ground may be formed to the chamber 220 or the substrate. Support member 210. Additionally, an AC power source can be applied to the sputter target 110, a polarity can be formed on the sputter target 110 by varying power values (eg, voltage values), and the chamber 220 or substrate support member 210 can be grounded or floated. Here, a high voltage power source can be applied to increase the density and deposition speed of the plasma, the chamber 220 can be grounded in a desired manner, and the substrate support member 210 can be grounded or floated.

The power source may be applied to the sputtering target 110 by the power supply component 170 to form a plasma, or the plasma may be formed between the sputtering target 110 and the substrate 10 by a magnetic field formed by the plurality of magnets 120. The front side of the first magnet 121. The plasma can be generated by a power source applied to the sputtering target 110, and the distribution and density of the generated plasma can be controlled by the magnetic field formed by the plurality of magnets 120.

According to an exemplary embodiment, since the plurality of second magnets are sequentially arranged at both sides of the first magnet, a strong magnetic field can be formed even by a magnet having a low magnetic strength, the plurality of second magnets having The magnetic pole of the first polarity faces the support member, and the magnetic pole of the first magnet having the first polarity faces the sputtering target. That is, the owner of the second magnet is connected to the first magnet by magnetic lines of force to increase the magnetic flux density at the first magnet. Therefore, the magnetic field passing through the sputtering target can be increased, and the strength of the magnetic field formed on one surface of the sputtering target when the first magnet faces the sputtering target can be increased. Therefore, the thickness of the sputtering target can be increased, and further, even if a ferromagnetic target is used, the target can be effectively sputtered. Further, when the cylindrical target is rotated or the plurality of magnets are moved, the target can be uniformly used from the entire surface of the sputtering target.

Since the plurality of second magnets are sequentially arranged at both sides of the first magnet, the sputtering cathode according to the exemplary embodiment can be formed on one surface of the sputtering target even by a magnet having a low magnetic strength. In the strong magnetic field, the magnetic poles of the plurality of second magnets having the first polarity face the support member, and the magnetic poles of the first magnet having the first polarity face the sputtering target. That is, since the owner of the second magnet is connected to the first magnet by magnetic lines of force, the magnetic flux density at the first magnet can be increased, and thus when the first magnet faces the sputtering target, one of the sputtering targets The strength of the magnetic field formed on the surface can be increased. Therefore, the thickness of the sputtering target can be increased, and further, even if a ferromagnetic target is used, the target can be effectively sputtered.

Further, when the cylindrical target is rotated or the plurality of magnets are moved, the target can be uniformly used from the entire surface of the sputtering target.

Although the exemplary embodiments of the present invention have been described, it should be understood that the present invention should not be limited to the exemplary embodiments, but the spirit of the present invention as claimed in the art can be Make various changes and refinements within the scope. Therefore, the true scope of the invention should be determined by the technical scope of the appended claims.

10‧‧‧Substrate

100‧‧‧ Sputtered cathode

110‧‧‧Splating target

111‧‧‧Backing board

120‧‧‧ magnet

121‧‧‧First magnet

122‧‧‧second magnet

130‧‧‧Support members

131‧‧‧Support plate/plate support plate

132‧‧‧ side wall

140‧‧‧First drive unit

150‧‧‧Second drive unit

160‧‧‧Gap adjustment components

170‧‧‧Power supply components

200‧‧‧ Sputtering device

210‧‧‧Substrate support parts

220‧‧‧ chamber

The exemplary embodiments may be understood in more detail in the following description of the drawings, in which: FIG. 1 is a cross-sectional view showing a sputtering cathode according to an exemplary embodiment. FIG. 2 is a diagram for explaining axial rotation of a sputtering target according to an exemplary embodiment. FIG. 3 is a diagram illustrating the intensity of a magnetic field based on the thickness of a sputtering target according to an exemplary embodiment. FIG. 4 is a cross-sectional view illustrating a plate-shaped sputtering target according to an exemplary embodiment. FIG. 5 is a diagram for explaining movement of a plurality of magnets according to an exemplary embodiment. FIG. 6 is a diagram for explaining gap adjustment between a plurality of magnets and a sputtering target according to an exemplary embodiment. FIG. 7 is a view for explaining a plate-shaped support member according to an exemplary embodiment. FIG. 8 is a cross-sectional view showing a sputtering apparatus according to another exemplary embodiment.

Claims (15)

A sputtering cathode comprising: a sputtering target made of a target; a plurality of magnets disposed at a rear surface side of the sputtering target; and a support member for supporting the plurality of magnets, wherein The plurality of magnets include: a first magnet having a first polarity of magnetic poles facing the sputtering target; and a second magnet having the same polarity as the first polarity The magnetic poles face the support member and are provided in plurality in such a manner as to be sequentially arranged on both sides of the first magnet. The sputter cathode of claim 1, wherein the target is a ferromagnetic material. The sputter cathode of claim 1, wherein the support member is made of a magnetic material. The sputtering cathode according to claim 1, further comprising a gap adjusting member for adjusting a gap between the plurality of magnets and the sputtering target. The sputtering cathode according to claim 1, wherein the support member has a strip shape or a tubular shape extending in a first direction, and the plurality of magnets are arranged along an outer circumference of the support member. On the outer circumference of the support member. The sputter cathode of claim 5, wherein the second magnet is sequentially passed from one side of the first magnet to the other side of the first magnet along the outer circumference of the support member arrangement. The sputter cathode of claim 5, wherein the sputter target is a cylindrical target extending in the first direction, and the plurality of magnets and the support member are disposed on the splash In the interior space of the target. The sputter cathode of claim 7, further comprising a first driving member for axially rotating the sputter target relative to a central axis of the sputter target. The sputter cathode of claim 1, wherein the support member comprises: a plate-shaped support plate disposed opposite the sputter target and having an axis in a first direction; and a sidewall member at The support plate protrudes toward the sputtering target on the circumference. The sputter cathode of claim 5, wherein the sputter target is a plate-shaped sputter cathode. The sputter cathode of claim 10, further comprising a second driving member for moving the plurality of magnets and the support member in a second direction crossing the first direction. The sputter cathode of claim 5, wherein each of the plurality of magnets extends in the first direction or comprises a column arranged in the first direction Multiple magnetic sheets. The sputter cathode of claim 1, further comprising a connecting magnet for forming a closed loop to surround the first magnet by connecting at least one pair of second magnets symmetrical with respect to the first magnet . A sputtering apparatus, comprising: a sputtering cathode according to any one of claims 1 to 9; a substrate supporting member disposed opposite to the sputtering target; and a chamber, A sputtering cathode and the substrate support member are disposed in the chamber. The sputtering apparatus of claim 14, wherein the first magnet is disposed opposite to the substrate supporting member.