JPH0243824B2 - SUPATSUTARINGUSOCHI - Google Patents
SUPATSUTARINGUSOCHIInfo
- Publication number
- JPH0243824B2 JPH0243824B2 JP3265285A JP3265285A JPH0243824B2 JP H0243824 B2 JPH0243824 B2 JP H0243824B2 JP 3265285 A JP3265285 A JP 3265285A JP 3265285 A JP3265285 A JP 3265285A JP H0243824 B2 JPH0243824 B2 JP H0243824B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- target
- sio
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 34
- 238000004544 sputter deposition Methods 0.000 claims description 19
- 238000000429 assembly Methods 0.000 claims description 5
- 230000000712 assembly Effects 0.000 claims description 5
- 239000010408 film Substances 0.000 description 30
- 229910004298 SiO 2 Inorganic materials 0.000 description 22
- 230000004907 flux Effects 0.000 description 21
- 230000015572 biosynthetic process Effects 0.000 description 12
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 239000010453 quartz Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明はスパツタリング装置に関するもので、
とりわけバイアススパツタリング法による薄膜の
形成速度の向上及び形成した薄膜の膜厚均一に極
めて有効なスパツタリング装置に関するものであ
る。[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to a sputtering device,
In particular, the present invention relates to a sputtering apparatus that is extremely effective in increasing the speed of forming thin films by bias sputtering and in uniformly forming the thickness of the formed thin film.
従来技術について説明する。ここでは説明の便
宜上SiO2膜の形成に就いて以下に説明するが、
本発明はこれに限定されるものではなく、他の薄
膜の形成にも適用できる。
The conventional technology will be explained. For convenience of explanation, the formation of the SiO 2 film will be explained below.
The present invention is not limited to this, but can also be applied to the formation of other thin films.
バイアススパツタ法によるSiO2膜の形成は、
ターゲツトの石英板を取付けるターゲツト電極の
他に基板電極にも高周波電力を印加し基板電極に
ターゲツト電極の20〜50％の負の電流バイアス電
圧を誘起してターゲツトの他に基板にもグロー放
電中のイオンの一部を衝突させ、基板にSiO2膜
を堆積させながら同時にその一部を再放出（エツ
チング除去）させてSiO2膜を形成する方法であ
る。 Formation of SiO 2 film by bias sputtering method is
High-frequency power is applied to the substrate electrode in addition to the target electrode to which the quartz plate of the target is attached, and a negative current bias voltage of 20 to 50% of that of the target electrode is induced in the substrate electrode, causing glow discharge not only to the target but also to the substrate. This method deposits a SiO 2 film on the substrate by colliding with some of the ions, while at the same time re-releasing (etching away) some of the ions to form the SiO 2 film.
バイアススパツタ法によるSiO2膜の形成を、
第１図のスパツタリング装置の一例を参照して更
に具体的に説明する。真空容器１の中にターゲツ
ト電極２及び基板電極４を取付け、真空容器壁を
接地して３電極構造とする。ターゲツト電極には
ターゲツトの石英板３を取付ける。また基板電極
には石英板５を取付け、その石英板上にSiO2膜
を形成しようとする基板６を設置する。基板電極
上の石英板５は、基板電極４がスパツタされて基
板６に形成するSiO2膜が汚染されることを防止
する。７，８は、ターゲツト電極２、基板電極４
の裏面がスパツタされないようにするために接地
電位に保たれたアースシールドである。この真空
容器の中を排気装置（図には示されない）によつ
てまず10-6Torr程度の高真空に排気し、その後
ガス導入装置（図には示されない）によつて不活
性ガス（例えばArガス）を10-3〜10-2Torr台ま
で導入し、高周波電源９（例えば発振波数1356M
Hz）によつて高周波電力をターゲツト電極及び基
板電極に印加し、グロー放電を起こさせる。基板
電極に印加する高周波電力は可変コンデンサ１０
によつて調整し、基板電極にはターゲツト電極に
対して20〜50％の負の直流電圧が誘起されるよう
にして、基板６上にSiO2膜を形成する。この様
に基板に負の直流電圧を誘起してSiO2膜を形成
するとSiO2膜や基板表面に凹凸が存在しても
SiO2膜の表面を平担に形成できる。反面このバ
イアススパツタ法は、SiO2膜を堆積しながらそ
のSiO2膜の一部をエツチングしてSiO2膜を形成
するため、SiO2膜の形成速度が著しく小さくな
るという欠点がある。例えば第１図の装置では基
板に負の直流電圧を誘起しない場合SiO2膜の形
成速度は100Å／分程度であるが、ターゲツト電
極に対して20〜50％の負の直流電圧を誘起すると
SiO2膜の形成速度は80〜50Å／分にまで低下す
る。また、第１図に示したターゲツト電極に替つ
てプレーナマグネトロン型の高速スパツタ源を用
いたバイアススパツタリング装置の提案があるが
基板に負の直流電圧を誘起した場合においても
SiO2膜の形成速度が３〜５倍になる反面漏えい
磁束が発生して基板上でのエツチングの均一性に
悪影響を与える。従つて、SiO2膜の堆積と堆積
した膜の一部のエツチングを同時に行なつて
SiO2膜を形成するバイアススパツタ法において
は、膜厚均一性が著しく悪くなるという欠点があ
る。 Formation of SiO 2 film by bias sputtering method,
A more specific explanation will be given with reference to an example of the sputtering apparatus shown in FIG. A target electrode 2 and a substrate electrode 4 are installed in a vacuum container 1, and the wall of the vacuum container is grounded to form a three-electrode structure. A target quartz plate 3 is attached to the target electrode. Further, a quartz plate 5 is attached to the substrate electrode, and a substrate 6 on which a SiO 2 film is to be formed is placed on the quartz plate. The quartz plate 5 on the substrate electrode prevents the substrate electrode 4 from being sputtered and contaminating the SiO 2 film formed on the substrate 6. 7 and 8 are the target electrode 2 and the substrate electrode 4
This is an earth shield that is kept at ground potential to prevent the back side of the device from being spattered. The inside of this vacuum container is first evacuated to a high vacuum of about 10 -6 Torr by an exhaust device (not shown), and then an inert gas (e.g. Ar gas) is introduced to a level of 10 -3 to 10 -2 Torr, and a high frequency power source 9 (e.g. oscillation wave number 1356M) is introduced.
Hz) is applied to the target electrode and the substrate electrode to cause a glow discharge. The high frequency power applied to the substrate electrode is controlled by a variable capacitor 10.
A SiO 2 film is formed on the substrate 6 by adjusting the voltage so that a negative DC voltage of 20 to 50% with respect to the target electrode is induced in the substrate electrode. In this way, when a negative DC voltage is induced on the substrate to form a SiO 2 film, even if there are irregularities on the SiO 2 film or the substrate surface,
The surface of the SiO 2 film can be formed flat. On the other hand, this bias sputtering method has the disadvantage that the SiO 2 film formation rate is extremely slow because the SiO 2 film is formed by etching a part of the SiO 2 film while depositing the SiO 2 film. For example, in the device shown in Figure 1, the SiO 2 film formation rate is about 100 Å/min when no negative DC voltage is induced on the substrate, but when a 20-50% negative DC voltage is induced on the target electrode.
The formation rate of SiO 2 film decreases to 80-50 Å/min. In addition, there has been a proposal for a bias sputtering device that uses a planar magnetron type high-speed sputtering source instead of the target electrode shown in Figure 1, but even when a negative DC voltage is induced in the substrate,
Although the formation rate of the SiO 2 film increases by 3 to 5 times, leakage magnetic flux is generated, which adversely affects the uniformity of etching on the substrate. Therefore, the deposition of the SiO 2 film and the etching of a part of the deposited film are performed simultaneously.
The bias sputtering method for forming a SiO 2 film has the disadvantage that the uniformity of the film thickness is significantly poor.
本発明の目的は、従来のスパツタリング装置の
有する上記欠点を解決し、基板に負電圧を誘起し
た場合においても膜の形成速度が大きく、均一な
膜厚を有する膜を形成できるスパツタリング装置
を提供することにある。
An object of the present invention is to solve the above-mentioned drawbacks of conventional sputtering apparatuses, and to provide a sputtering apparatus that can form a film with a high film formation rate and a uniform thickness even when a negative voltage is induced on a substrate. There is a particular thing.
上記目的を達成するための本発明は、ターゲツ
ト電極は少なくとも２個のマグネツトアセンブリ
を有しており、該アセンブリに内蔵されている少
なく共２個の永久磁石は近接する他のマグネツト
アセンブリの有する永久磁石と互いに極性を逆に
して配置されていることにある。この様に近接す
るマグネツトアセンブリにおけるトンネル状の磁
力線束において、その磁量線の向きを互いに逆方
向とし、基板あるいはマグネツトアセンブリを運
動させることによつて漏えい磁束の影響を均一化
することにある。
In order to achieve the above object, the present invention includes a target electrode having at least two magnet assemblies, and at least two permanent magnets built in the assemblies that are connected to other adjacent magnet assemblies. The reason is that the permanent magnets are arranged with opposite polarities to each other. In this way, in the tunnel-shaped magnetic flux in adjacent magnet assemblies, the directions of the magnetic flux lines are opposite to each other, and by moving the substrate or the magnet assembly, the influence of the leakage magnetic flux can be made uniform. be.
本発明は上記構成になるので、バイアススパツ
タによるSiO2膜形成において膜厚均一性に悪影
響を及ぼす高速スパツタ源のマグネツトアセンブ
リによる基板上での漏えい磁束の影響が小さくな
る。以下図面を用いて本発明の原理を説明する。 Since the present invention has the above configuration, the influence of leakage magnetic flux on the substrate caused by the magnet assembly of the high-speed sputtering source, which adversely affects film thickness uniformity in SiO 2 film formation by bias sputtering, is reduced. The principle of the present invention will be explained below using the drawings.
第２ａ図および第２図ｂは本発明を説明するた
めの概略斜視図である。 2a and 2b are schematic perspective views for explaining the present invention.
プレーナマグネトロン型の高速スパツタ源は、
第２ｂ図に示すマグネツトアセンブリをターゲツ
ト電極の中に組込むことによつて第２ａ図に示す
様なトンネ状の磁力線束を形成することによつて
構成される。すなわち第２ｂ図に示したように、
軟鉄板２１上に例えば表面２３がＮ極になる様に
軟鉄板の周辺部にループ状（環状）の永久磁石２
２を配置し、軟鉄板上の中央部には、表面２３が
Ｎ極の場合には表面２５がＳ極になる様に永久磁
石２４を配置する。このマグネツトアセンブリを
ターゲツトの裏側に取付けると、第２ａ図の様な
トンネル状の磁力線束を発生させることができ
る。すなわち第２ａ図において、ターゲツト１１
上に磁力線１２が矢印で示した方向に発生し、タ
ーゲツト表面上で閉じたトンネ状の磁力線束を形
成する。この時の磁力線の磁束密度はターゲツト
表面においてその平行成分で200〜300ガウスであ
ればよい。またスパツタリング装置の中でグロー
放電を起こすと、このターゲツト表面に負の直流
電圧が誘起されターゲツト表面に垂直に電気力線
が形成される。この磁力線束と電気力線によつ
て、グロー放電中で発生した電子はこのトンネル
状の閉じた磁力線束の中を運動し、効率よくAr
ガスをイオン化する。この結果、トンネル状に閉
じた磁力線束に面しているターゲツト表面１３が
これ以外のターゲツト表面に比べ高速度でスパツ
タされ、基板での膜の形成速度を大きくすること
ができる。なお、ターゲツト表面の領域１３はエ
ロージヨンエリアと呼ばれている。ところが、こ
のままではターゲツト電極に組込んだマグネツト
アセンブリによつて基板表面には、基板に垂直な
成分で50ガウス程度の漏えい磁束が存在する。 The planar magnetron type high speed spatter source is
It is constructed by incorporating the magnet assembly shown in FIG. 2b into the target electrode to form a tunnel-shaped magnetic flux as shown in FIG. 2a. That is, as shown in Figure 2b,
A loop-shaped (annular) permanent magnet 2 is placed on the soft iron plate 21 at the periphery of the soft iron plate, for example, so that the surface 23 becomes the north pole.
A permanent magnet 24 is placed in the center of the soft iron plate so that when the surface 23 is the north pole, the surface 25 is the south pole. When this magnet assembly is attached to the back side of the target, a tunnel-like flux of magnetic lines of force as shown in FIG. 2a can be generated. That is, in FIG. 2a, the target 11
Above, magnetic lines of force 12 are generated in the direction indicated by the arrow, forming a closed tunnel-like flux of magnetic lines of force on the target surface. At this time, the magnetic flux density of the lines of magnetic force may be 200 to 300 Gauss in parallel components on the target surface. Furthermore, when a glow discharge is generated in a sputtering device, a negative DC voltage is induced on the target surface, and electric lines of force are formed perpendicular to the target surface. Due to this magnetic flux and electric flux, the electrons generated during the glow discharge move in this tunnel-like closed magnetic flux, and efficiently Ar
Ionize the gas. As a result, the target surface 13 facing the tunnel-shaped flux of magnetic flux is sputtered at a higher speed than other target surfaces, making it possible to increase the rate of film formation on the substrate. Note that the region 13 on the target surface is called an erosion area. However, as it is, a leakage magnetic flux of about 50 Gauss exists on the substrate surface due to the magnet assembly incorporated in the target electrode, with a component perpendicular to the substrate.
ところが、前述の様に本発明は磁力線の向きが
互いに逆方向になつており、漏洩磁束の影響が均
一化され、これによつて均一な膜厚のSiO2膜が
得られる。 However, as described above, in the present invention, the directions of the magnetic lines of force are opposite to each other, so that the influence of leakage magnetic flux is made uniform, thereby making it possible to obtain a SiO 2 film with a uniform thickness.
上記構成において、基板あるいはマグネツトア
センブリを所定の稼動装置に取付け、併進、往復
または回転運動させるとさらに均一な膜が得られ
るのでなお良い。 In the above configuration, it is preferable to attach the substrate or the magnet assembly to a predetermined moving device and move it in translation, reciprocation, or rotation, since a more uniform film can be obtained.
以下、本発明を実施例を参照して詳細に説明す
る。 Hereinafter, the present invention will be explained in detail with reference to Examples.
実施例 １
本実施例は第３図に示すように、ターゲツト３
１の中に複数の閉じたトンネル状磁力線束３２，
３３，３４，３５をもち、複数のエロージヨンエ
リア３６，３７，３８，３９が形成される。ここ
で、磁力線束３２，３４の磁力線の向き３１０，
３１２は、周辺部から中央部に向かつて形成され
る。また、磁力線束３３，３５の磁力線の向き３
１１，３１３は、磁力線束３２，３４とは反対に
中央部から周辺部に向つて形成される。Example 1 In this example, as shown in FIG.
1, a plurality of closed tunnel magnetic fluxes 32,
33, 34, and 35, and a plurality of erosion areas 36, 37, 38, and 39 are formed. Here, the direction 310 of the lines of magnetic force of the magnetic fluxes 32 and 34,
312 is formed from the periphery toward the center. In addition, the direction 3 of the lines of magnetic force of the magnetic fluxes 33 and 35
11, 313 are formed from the center toward the periphery, opposite to the magnetic fluxes 32, 34.
実施例 ２
本実施例は第４図に示すようなインライン型の
装置において、ターゲツト電極４２，４３，４４
に第２−ｂ図のようなマグネツトアセンブリを組
込む時、磁力線束の磁力線の向きをターゲツト電
極４２，４３で互いに逆にし、ターゲツト電極４
３，４４で互いに逆とする。第４図において、４
１……真空容器、４５，４６，４７……ターゲツ
ト、４８，４９，４１０，４１４……高周波電
源、４１１……基板電極、４２は基板４１３に形
成する薄膜の汚染を防止するためターゲツト同材
質の板である。基板電極４１１は矢印４１５で示
した方向に直線運動を行ない、膜厚の均一性は向
上する。Embodiment 2 This embodiment uses target electrodes 42, 43, 44 in an in-line type device as shown in FIG.
When assembling a magnet assembly as shown in FIG. 2-b, the direction of the magnetic flux is reversed between the target electrodes 42 and 43.
3 and 44 are mutually opposite. In Figure 4, 4
1... Vacuum container, 45, 46, 47... Target, 48, 49, 410, 414... High frequency power supply, 411... Substrate electrode, 42 is made of the same material as the target in order to prevent contamination of the thin film formed on the substrate 413. This is the board. The substrate electrode 411 performs a linear movement in the direction shown by the arrow 415, and the uniformity of the film thickness is improved.
実施例 ３
本実施例は第５図に示すような円筒型の装置
で、ターゲツト電極５２，５３に第２−ｂ図のよ
うなマグネツトアセンブリを組込む時、磁力線束
の磁力線の向きを隣り合うターゲツト電極で互い
に逆とする。なお他の記号は実施２と同じであ
る。基板電極５１１は５１５のように回転運動す
る。Embodiment 3 This embodiment uses a cylindrical device as shown in FIG. 5, and when a magnet assembly as shown in FIG. They are reversed at the target electrode. Note that other symbols are the same as in the second embodiment. The substrate electrode 511 rotates like 515.
以上説明したごとく本発明によれば、バイアス
スパツタ法によつて薄膜を形成する場合、その形
成速度が著しく向上し、かつその薄膜の均一性も
改善されるので、実用上極めて有用である。
As explained above, according to the present invention, when forming a thin film by the bias sputtering method, the formation speed is significantly improved and the uniformity of the thin film is also improved, so that it is extremely useful in practice.
第１図は従来のスパツタリング装置の概略断面
図、第２ａ図および第２ｂ図は本発明を説明する
ためのターゲツト電極の概略斜視図、第３図は本
発明に使用したターゲツト電極の概略斜視図、第
４図は本発明の一実施例を示す概略の断面図、第
５図は本発明の他の実施例を示す概略断面図であ
る。
４１……真空容器、４２，４３，４４……ター
ゲツト電極、４，５，４６，４７……ターゲツ
ト、４８，４９，４１０，４１４……高周波電
源、４１１……基板電極、４１３……基板、４１
２……汚染防止板。
FIG. 1 is a schematic sectional view of a conventional sputtering apparatus, FIGS. 2a and 2b are schematic perspective views of a target electrode for explaining the present invention, and FIG. 3 is a schematic perspective view of a target electrode used in the present invention. , FIG. 4 is a schematic cross-sectional view showing one embodiment of the present invention, and FIG. 5 is a schematic cross-sectional view showing another embodiment of the present invention. 41... Vacuum container, 42, 43, 44... Target electrode, 4, 5, 46, 47... Target, 48, 49, 410, 414... High frequency power supply, 411... Substrate electrode, 413... Substrate, 41
2...Pollution prevention board.
Claims (1)
び、高周波電源を少なくとも有するスパツタリン
グ装置において、ループ状の永久磁石と該ループ
状の永久磁石のループ内に独立して設けられ、上
記ループ状の永久磁石とは極性の異なる永久磁石
からなるマグネツトアツセンブリーを少なくとも
２個有し、上記各マグネツトアツセンブリーの有
する上記ループ状の永久磁石と上記独立して設け
られた永久磁石は、隣り合う上記マグネツトアツ
センブリーの有する上記ループ状の永久磁石と上
記独立して設けられた永久磁石と、それぞれ互い
に異なる極性を有することを特徴とするスパツタ
リング装置。1. In a sputtering device having at least a vacuum container, a target electrode, a substrate electrode, and a high frequency power source, a loop-shaped permanent magnet is provided independently within the loop of the loop-shaped permanent magnet, and has at least two magnet assemblies each consisting of permanent magnets with different polarities, and the loop-shaped permanent magnet of each magnet assembly and the independently provided permanent magnet are different from each other. A sputtering device characterized in that the loop-shaped permanent magnet included in the magnet assembly and the independently provided permanent magnet have different polarities.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3265285A JPH0243824B2 (en) | 1985-02-22 | 1985-02-22 | SUPATSUTARINGUSOCHI |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3265285A JPH0243824B2 (en) | 1985-02-22 | 1985-02-22 | SUPATSUTARINGUSOCHI |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60194073A JPS60194073A (en) | 1985-10-02 |
| JPH0243824B2 true JPH0243824B2 (en) | 1990-10-01 |
Family
ID=12364792
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3265285A Expired - Lifetime JPH0243824B2 (en) | 1985-02-22 | 1985-02-22 | SUPATSUTARINGUSOCHI |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0243824B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62147602A (en) * | 1985-12-23 | 1987-07-01 | 松下電器産業株式会社 | Manufacture of dielectric film |
| JPH0649936B2 (en) * | 1986-02-13 | 1994-06-29 | 日電アネルバ株式会社 | Bias spattering device |
| DE69216685T2 (en) * | 1991-05-31 | 1997-05-28 | Deposition Sciences Inc | Sputtering system |
-
1985
- 1985-02-22 JP JP3265285A patent/JPH0243824B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60194073A (en) | 1985-10-02 |
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