JPH01132765A - Magnetron sputtering device - Google Patents

Abstract

PURPOSE:To uniformly sputter the surface of a target and to enhance the speed of forming a thin film by disposing an annular magnetic field generating source having the bore larger than the bore of a target shielding cover in the direction perpendicular to the target surface. CONSTITUTION:The magnetic field generating source consisting of an annular superconductive member 11 having the bore larger than the bore of the target 4 shielding cover 13 is disposed perpendicularly above the target 4. Magnetic lines b10 of force are generated by the Meissner effect to back the magnetic lines a9 of force toward the target 4 when the magnetic lines a9 of force generated on the target 4 are going to pass the inside of the ring of the superconductive member 11. The density of the magnetic lines a9 of force, therefore, increase near the target 4. As a result, the number of the times when electrons collide against gaseous carrier molecules near the target 4 increases and the efficiency of sputtering the target 4 is improved. The speed at which the thin film is formed on the substrate 12 is thus increased.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a magnetron sputtering apparatus used for forming thin films in an industrial field.

BACKGROUND OF THE INVENTION Sputtering equipment is used as a means of forming thin films. Among these, magnetron sputtering equipment is currently widely used because the sputtering gas pressure is lower than that of other sputtering equipment, so a highly pure film can be formed, and the film formation rate is fast. A structural diagram of the magnetron sputtering apparatus is shown in FIG. The inside of the t-yamba 16 is evacuated by a vacuum pump.

A carrier gas, such as argon gas, flows into the chamber 16 from a gas inlet 17 . In the case of reactive magnetron sputtering, a reactive gas is also introduced. When a high voltage is applied between the anode 18 and the target 19, a discharge is generated between the anode 18 and the target 19, and the carrier gas is ionized during this discharge to sputter the target 19. Backing plate 2
1. Below is a permanent magnet 23. Dust magnetic lines of force 24 are generated.

These magnetic lines of force 24 extend the time that electrons remain near the target compared to other sputtering devices, and the number of times the electrons collide with neutral carrier gas molecules increases, increasing sputtering efficiency. In addition, the target 19 is cooled by cooling water 22 via a backing plate 21, and the target 19 is cooled so that parts other than the target 19 are not sputtered.
There is a dokaper 26 on the sea. The chamber 16 and target 19 are insulated with an insulator 27.

Problems to be Solved by the Invention - In a magnetron sputtering device, discharge is concentrated near the center of the target where the electric field and magnetic field are perpendicular to each other, and this part is sputtered most noticeably. Therefore, when sputtering is performed for a long time, the target surface is sputtered non-uniformly, resulting in poor utilization of the target and a change in the thickness distribution of the formed thin film.

Another disadvantage was that the thin film formation speed was slower than that of a vacuum evaporation system.

In view of the above-mentioned problems with conventional magnetron sputtering devices, the present invention provides a magnetron sputtering device that sputters more uniformly on the target surface by simple means, thereby increasing the utilization rate of the target and increasing the thin film formation rate during sputtering. The purpose is to provide a sputtering device.

Means for Solving the Problems In order to solve the above-mentioned problems, the present invention provides an annular magnetic field generation source having an inner diameter larger than the inner diameter of the shield cover of the target, where the magnetic field is directed toward the target on the target surface. They are placed vertically apart.

By providing a working magnetic field source, lines of magnetic force that are moving away from the target are pushed back to the vicinity of the target.
As a result, as the magnetic field line density increases near the target, the area where the electric and magnetic fields intersect perpendicularly increases, so the time that electrons remain near the target increases, the number of times they collide with carrier gas molecules increases, and the sputtering efficiency increases, resulting in a thin film. Increases formation rate. In addition, the target surface is sputtered more uniformly, the target utilization rate is increased, and there is no fear that the film thickness distribution will change.

Examples Examples of the present invention will be described below. FIG. 1 shows a first embodiment of the magnetron sputtering apparatus of the present invention.

In FIG. 1, the inside of a chamber 1 is evacuated by a vacuum pump. The chamber 1 has a gas inlet 2 through which a carrier gas flows. In the case of reactive magnetron devices, a reactive gas also flows in. There is an anode 3 and a target 4 in the chamber 1, and a high voltage is applied to both M1, so that an electric field 6 is generated. Further, a discharge occurs between the two, and the carrier gas is ionized during this discharge and sputters the target 4. The target 4 is bonded to the backing plate 6 via an adhesive.
The target 4 is cooled by cooling water 7 throughout. Further, there is a permanent magnet 8 under the backing plate 6, and lines of magnetic force a9 are generated on the target 4. An annular superconducting member 11 is located vertically above the target 4, and when a line of magnetic force a9 attempts to pass through the ring of the annular superconducting member 11, a line of magnetic force b10 is generated due to the Meissner effect, and the line of magnetic force IL9 is directed toward the target 4. Push it back. Therefore, the density of the magnetic lines of force IL9 increases near the target 4. As a result, the number of times electrons collide with carrier gas molecules near the target 4 increases, and the efficiency with which the ionized carrier gas sputters the target 4 increases, so that a thin film is formed on the substrate 12 placed on the anode 3. Increases speed. Furthermore, since the area where the electric field and magnetic field are most perpendicular to each other for sputtering increases, the surface of the target 40 is sputtered more uniformly, the utilization rate of the target 4 increases, and there is no fear that the film thickness distribution will change. As the superconducting member 11, for example, there is a sintered body of Y-Ba-Cu oxide.

This configuration is very simple, requiring only the provision of the superconducting member 11. Furthermore, in FIG. 1, reference numeral 13 is a shield cover, which prevents substances other than the target 4 from being sputtered. Further, the inner diameter of the annular superconducting member 11 needs to be larger than the inner diameter of the shield cover 13. This is to prevent the superconducting member 11 from being sputtered.

FIG. 2 shows a second embodiment of the magnetron sputtering apparatus of the present invention. In FIG. 2, an annular electromagnetic coil 15 is used instead of the superconducting member 11. As shown in FIG. 2, when a current is applied to the electromagnetic coil 16 counterclockwise when viewed from the target 4 side, magnetic lines of force b10 are generated, and the permanent magnet 8
The lines of magnetic force a9 generated by this are pushed back toward the target 4, and the area where the electric field and the magnetic field are perpendicular to each other increases.

Therefore, the sputtering efficiency is increased, the utilization rate of the target 4 is increased, and there is no fear that the film thickness distribution will change.

Effects of the Invention Using the magnetron sputtering apparatus of the present invention increases the rate of thin film formation. In addition, the target surface is sputtered more uniformly, the target utilization rate is increased, and there is no fear that the film thickness distribution will change.

[Brief explanation of the drawing]

FIG. 1 is a sectional view showing the structure of a first embodiment of the magnetron sputtering apparatus of the present invention, FIG. 2 is a sectional view showing the structure of the second embodiment of the magnetron sputtering apparatus of the present invention, and FIG. 1 is a cross-sectional view showing the configuration of a conventional magnetron sputtering device. 1.16...Chamber, 2.17...Gas inlet, 3.18...Anode, 4.19...
Target, 6.20... Electric field, 6.21...
... Backing plate, 7.22 ... Cooling water, 8.23 ... Permanent magnet, 9 ... Lines of magnetic force a
110... Lines of magnetic force b111... Superconducting member, 12.25... Substrate, 13.26...
Shield cover, 14.27...Insulator, 16...
...Electromagnetic coil, 24...Magnetic field lines. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure 2

Claims (3)

[Claims] (1) An annular magnetic field generation source having an inner diameter larger than the inner diameter of the shield cover of the target is located vertically apart from the target surface, and the magnetic field generation source generates a magnetic field on the target toward the target. magnetron sputtering equipment. (2) The magnetron sputtering apparatus according to claim 1, wherein a superconducting member is used as the annular magnetic field generation source. (3) The magnetron sputtering apparatus according to claim 1, wherein an electromagnetic coil is used as the annular magnetic field generation source.