JPS6465261A - Vapor deposition method by plasma ionization - Google Patents

Vapor deposition method by plasma ionization

Info

Publication number
JPS6465261A
JPS6465261A JP1368888A JP1368888A JPS6465261A JP S6465261 A JPS6465261 A JP S6465261A JP 1368888 A JP1368888 A JP 1368888A JP 1368888 A JP1368888 A JP 1368888A JP S6465261 A JPS6465261 A JP S6465261A
Authority
JP
Japan
Prior art keywords
vapor deposition
plasma
substrate
film
mentioned
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1368888A
Other languages
Japanese (ja)
Inventor
Takayuki Katsube
Takahiro Aoyama
Masayuki Kawaguchi
Michio Taniguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP1368888A priority Critical patent/JPS6465261A/en
Publication of JPS6465261A publication Critical patent/JPS6465261A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To deposit a high-performance film by plasma ionization evaporation at a high film synthesizing speed on the vapor deposition surface of a substrate by impressing a magnetic field orthogonal with an electric field to the space near said surface so that charged particles are cycloidally moved in the direction parallel with the vapor deposition surface of the substrate. CONSTITUTION:Voltage is applied by a power supply device 11 to a substrate holder 9 mounted with the substrate 10 in a vapor deposition vessel 1 in which a reduced pressure is maintained. The electric field is thereby generated in the direction from the vapor deposition surface 10a of the substrate toward an evaporation source 7 to generate plasma. On the other hand, film forming material particles are generated from the evaporation source 7 by an electron beam EB. The particles are ionized by the above-mentioned plasma and the formed charged particles are deposited by evaporation on the surface 10a to form the film thereon. The magnetic field intersecting with the above-mentioned electric field is impressed by permanent magnets 21, 22 to the space near the surface 10a in the above-mentioned vapor deposition method by plasma ionization. The charged particles existing in said space are cycloidally moved by this magnetic field in the direction parallel with the surface 10a, by which the activity and density of the plasma are increased. The above- mentioned vapor deposition is thereby accelerated and the high-performance film is formed.
JP1368888A 1987-05-25 1988-01-26 Vapor deposition method by plasma ionization Pending JPS6465261A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1368888A JPS6465261A (en) 1987-05-25 1988-01-26 Vapor deposition method by plasma ionization

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP12569787 1987-05-25
JP1368888A JPS6465261A (en) 1987-05-25 1988-01-26 Vapor deposition method by plasma ionization

Publications (1)

Publication Number Publication Date
JPS6465261A true JPS6465261A (en) 1989-03-10

Family

ID=26349516

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1368888A Pending JPS6465261A (en) 1987-05-25 1988-01-26 Vapor deposition method by plasma ionization

Country Status (1)

Country Link
JP (1) JPS6465261A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101405625B1 (en) * 2011-12-23 2014-06-10 엘지이노텍 주식회사 Cvd apparatus
CN111699276A (en) * 2017-12-06 2020-09-22 亚利桑那薄膜研究有限责任公司 Additive manufacturing system and method for deposition of metal and ceramic materials

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51103879A (en) * 1975-03-12 1976-09-14 Hitachi Ltd IONPUREETEINGUSOCHI
JPS5591971A (en) * 1978-12-28 1980-07-11 Seiko Epson Corp Thin film forming method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51103879A (en) * 1975-03-12 1976-09-14 Hitachi Ltd IONPUREETEINGUSOCHI
JPS5591971A (en) * 1978-12-28 1980-07-11 Seiko Epson Corp Thin film forming method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101405625B1 (en) * 2011-12-23 2014-06-10 엘지이노텍 주식회사 Cvd apparatus
CN111699276A (en) * 2017-12-06 2020-09-22 亚利桑那薄膜研究有限责任公司 Additive manufacturing system and method for deposition of metal and ceramic materials

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