JPS6465261A - Vapor deposition method by plasma ionization - Google Patents
Vapor deposition method by plasma ionizationInfo
- Publication number
- JPS6465261A JPS6465261A JP1368888A JP1368888A JPS6465261A JP S6465261 A JPS6465261 A JP S6465261A JP 1368888 A JP1368888 A JP 1368888A JP 1368888 A JP1368888 A JP 1368888A JP S6465261 A JPS6465261 A JP S6465261A
- Authority
- JP
- Japan
- Prior art keywords
- vapor deposition
- plasma
- substrate
- film
- mentioned
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To deposit a high-performance film by plasma ionization evaporation at a high film synthesizing speed on the vapor deposition surface of a substrate by impressing a magnetic field orthogonal with an electric field to the space near said surface so that charged particles are cycloidally moved in the direction parallel with the vapor deposition surface of the substrate. CONSTITUTION:Voltage is applied by a power supply device 11 to a substrate holder 9 mounted with the substrate 10 in a vapor deposition vessel 1 in which a reduced pressure is maintained. The electric field is thereby generated in the direction from the vapor deposition surface 10a of the substrate toward an evaporation source 7 to generate plasma. On the other hand, film forming material particles are generated from the evaporation source 7 by an electron beam EB. The particles are ionized by the above-mentioned plasma and the formed charged particles are deposited by evaporation on the surface 10a to form the film thereon. The magnetic field intersecting with the above-mentioned electric field is impressed by permanent magnets 21, 22 to the space near the surface 10a in the above-mentioned vapor deposition method by plasma ionization. The charged particles existing in said space are cycloidally moved by this magnetic field in the direction parallel with the surface 10a, by which the activity and density of the plasma are increased. The above- mentioned vapor deposition is thereby accelerated and the high-performance film is formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1368888A JPS6465261A (en) | 1987-05-25 | 1988-01-26 | Vapor deposition method by plasma ionization |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12569787 | 1987-05-25 | ||
JP1368888A JPS6465261A (en) | 1987-05-25 | 1988-01-26 | Vapor deposition method by plasma ionization |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6465261A true JPS6465261A (en) | 1989-03-10 |
Family
ID=26349516
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1368888A Pending JPS6465261A (en) | 1987-05-25 | 1988-01-26 | Vapor deposition method by plasma ionization |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6465261A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101405625B1 (en) * | 2011-12-23 | 2014-06-10 | 엘지이노텍 주식회사 | Cvd apparatus |
CN111699276A (en) * | 2017-12-06 | 2020-09-22 | 亚利桑那薄膜研究有限责任公司 | Additive manufacturing system and method for deposition of metal and ceramic materials |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51103879A (en) * | 1975-03-12 | 1976-09-14 | Hitachi Ltd | IONPUREETEINGUSOCHI |
JPS5591971A (en) * | 1978-12-28 | 1980-07-11 | Seiko Epson Corp | Thin film forming method |
-
1988
- 1988-01-26 JP JP1368888A patent/JPS6465261A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51103879A (en) * | 1975-03-12 | 1976-09-14 | Hitachi Ltd | IONPUREETEINGUSOCHI |
JPS5591971A (en) * | 1978-12-28 | 1980-07-11 | Seiko Epson Corp | Thin film forming method |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101405625B1 (en) * | 2011-12-23 | 2014-06-10 | 엘지이노텍 주식회사 | Cvd apparatus |
CN111699276A (en) * | 2017-12-06 | 2020-09-22 | 亚利桑那薄膜研究有限责任公司 | Additive manufacturing system and method for deposition of metal and ceramic materials |
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