JPS6475671A - Sputtering device - Google Patents

Sputtering device

Info

Publication number
JPS6475671A
JPS6475671A JP23260987A JP23260987A JPS6475671A JP S6475671 A JPS6475671 A JP S6475671A JP 23260987 A JP23260987 A JP 23260987A JP 23260987 A JP23260987 A JP 23260987A JP S6475671 A JPS6475671 A JP S6475671A
Authority
JP
Japan
Prior art keywords
target
magnetic field
vicinity
electron beam
impressing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23260987A
Other languages
Japanese (ja)
Inventor
Hideaki Niimi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Maxell Holdings Ltd
Original Assignee
Hitachi Maxell Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Maxell Ltd filed Critical Hitachi Maxell Ltd
Priority to JP23260987A priority Critical patent/JPS6475671A/en
Publication of JPS6475671A publication Critical patent/JPS6475671A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To uniformly sputter the whole surface of a target, by impressing a vertical magnetic field on the target surface and also feeding an electron beam from a direction perpendicular to the above magnetic field. CONSTITUTION:At the time of carrying out sputtering by impressing a magnetic field 4 on the surface of a target 2 and ionizing a sputtering gas in the vicinity of the target surface, magnets 5, 3 are provided to a substrate 1 and the target 2, respectively, by which a magnetic field 4 is impressed on the surface of the target 2 in a vertical direction. Subsequently, an electron beam 7 is supplied by means of an electron-beam source 6 from a direction perpendicular to the above magnetic field 4. By this method, a rotary motion is provided to the electron beam 7 by means of Lorentz's force in the vicinity of the surface of the target 2 and the ionization of a sputtering gas in the vicinity of the target 2 surface is accelerated, by which the whole surface of the target 2 can be uniformly sputtered.
JP23260987A 1987-09-18 1987-09-18 Sputtering device Pending JPS6475671A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23260987A JPS6475671A (en) 1987-09-18 1987-09-18 Sputtering device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23260987A JPS6475671A (en) 1987-09-18 1987-09-18 Sputtering device

Publications (1)

Publication Number Publication Date
JPS6475671A true JPS6475671A (en) 1989-03-22

Family

ID=16942030

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23260987A Pending JPS6475671A (en) 1987-09-18 1987-09-18 Sputtering device

Country Status (1)

Country Link
JP (1) JPS6475671A (en)

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