JPS6439371A - Thin film forming device - Google Patents

Thin film forming device

Info

Publication number
JPS6439371A
JPS6439371A JP19569987A JP19569987A JPS6439371A JP S6439371 A JPS6439371 A JP S6439371A JP 19569987 A JP19569987 A JP 19569987A JP 19569987 A JP19569987 A JP 19569987A JP S6439371 A JPS6439371 A JP S6439371A
Authority
JP
Japan
Prior art keywords
substrate
thin film
ion
deposition substance
mass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19569987A
Other languages
Japanese (ja)
Inventor
Taku Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP19569987A priority Critical patent/JPS6439371A/en
Publication of JPS6439371A publication Critical patent/JPS6439371A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/006—Processes utilising sub-atmospheric pressure; Apparatus therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/12—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
    • B01J19/121—Coherent waves, e.g. laser beams

Abstract

PURPOSE:To control a vapor-deposition component to a substrate and an vaporization area and to form a thin film by successively providing an ionizer, an ion lens, a mass spectrometry means, and an ion reflector between a vaporization target and the substrate. CONSTITUTION:A laser beam 2 is introduced into a vacuum vessel 4, and focused on the vaporization target 6 through a condensing lens 5. The vaporized deposition substance 7 is ionized through the ionizer 8, focused by the ion lens 9, accelerated, and introduced into a drift pipe 10. The ionized deposition substance is separated therein into compositions 11 and 12 in accordance with the mass/charge value, the compositions are respectively reflected by the ion reflector 13 in directions 14 and 17, and the mass of the deposition substance is optionally selected. In addition, a voltage is impressed on the ion reflector 13 by a pulse generator 23, and the timing is determined by a delay circuit 22. The deposition substance 18 reflected in the direction of the substrate 20 is allowed to collide with the substrate 20, and a thin film 19 is formed.
JP19569987A 1987-08-04 1987-08-04 Thin film forming device Pending JPS6439371A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19569987A JPS6439371A (en) 1987-08-04 1987-08-04 Thin film forming device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19569987A JPS6439371A (en) 1987-08-04 1987-08-04 Thin film forming device

Publications (1)

Publication Number Publication Date
JPS6439371A true JPS6439371A (en) 1989-02-09

Family

ID=16345517

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19569987A Pending JPS6439371A (en) 1987-08-04 1987-08-04 Thin film forming device

Country Status (1)

Country Link
JP (1) JPS6439371A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0339464A (en) * 1989-07-06 1991-02-20 Toyota Central Res & Dev Lab Inc Method and device for vapor-depositing by laser
JPH05325885A (en) * 1992-05-26 1993-12-10 Hitachi Ltd Mass spectrometer
JPH0693445A (en) * 1992-07-29 1994-04-05 Mitsubishi Materials Corp Vapor deposition device and method
US5622567A (en) * 1992-11-30 1997-04-22 Mitsubishi Denki Kabushiki Kaisha Thin film forming apparatus using laser
JP2003081554A (en) * 2001-09-11 2003-03-19 Kumagai Gumi Co Ltd Erecting method for elevator shaft
CN114231884A (en) * 2021-12-10 2022-03-25 浙江巴顿焊接技术研究院 Coating method for plasma deposition after laser evaporation

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0339464A (en) * 1989-07-06 1991-02-20 Toyota Central Res & Dev Lab Inc Method and device for vapor-depositing by laser
JPH05325885A (en) * 1992-05-26 1993-12-10 Hitachi Ltd Mass spectrometer
JPH0693445A (en) * 1992-07-29 1994-04-05 Mitsubishi Materials Corp Vapor deposition device and method
US5622567A (en) * 1992-11-30 1997-04-22 Mitsubishi Denki Kabushiki Kaisha Thin film forming apparatus using laser
JP2003081554A (en) * 2001-09-11 2003-03-19 Kumagai Gumi Co Ltd Erecting method for elevator shaft
CN114231884A (en) * 2021-12-10 2022-03-25 浙江巴顿焊接技术研究院 Coating method for plasma deposition after laser evaporation

Similar Documents

Publication Publication Date Title
US4152478A (en) Ionized-cluster deposited on a substrate and method of depositing ionized cluster on a substrate
US5641959A (en) Method for improved mass resolution with a TOF-LD source
DE3787705D1 (en) Device and method for applying thin-film coatings in a vacuum.
EP0285668A4 (en) Thin film formation apparatus
JPS6439371A (en) Thin film forming device
JPS6473069A (en) Production of aluminum nitride film
JPS57205953A (en) Ion source
JPS5367099A (en) Electron beam shape accelerator
EP0378970B1 (en) Cold-cathode, ion-generating and ion-accelerating universal device
EP0269112A3 (en) Method of forming a thin crystalline metal film
JPS57106114A (en) Ion beam sputtering apparatus
JPS54124879A (en) Ion beam deposition
JPS6428367A (en) Electron beam vapor deposition device
RU2071138C1 (en) Field-effect ion source
JPH0214426B2 (en)
JPS5635763A (en) Film thickness controlling system
Cali et al. Study of film growth from excimer laser‐induced ablation of CdS
JPS5868856A (en) Ion source
RU2070611C1 (en) Pulse laser evaporator with ion separation
JPS5480185A (en) Mass spectrograph
JPS5927383B2 (en) Ion beam thin film production equipment
Kishi et al. Production of Fine Ion Beam from Solid Metal Target by a Narrow High Power Density Electron Beam Bombardment
Lynds et al. Physics of pulsed laser ablation at 248 nm: Plasma energetics and Lorentz interactions
SU784721A1 (en) Ion accelerator
JPS5579870A (en) Evaporation apparatus for substance in vacuum