JPS5687664A - Sputtering method - Google Patents

Sputtering method

Info

Publication number
JPS5687664A
JPS5687664A JP16472679A JP16472679A JPS5687664A JP S5687664 A JPS5687664 A JP S5687664A JP 16472679 A JP16472679 A JP 16472679A JP 16472679 A JP16472679 A JP 16472679A JP S5687664 A JPS5687664 A JP S5687664A
Authority
JP
Japan
Prior art keywords
thin film
opening
target
film
substrates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16472679A
Other languages
Japanese (ja)
Inventor
Nobuki Ibaraki
Yasuhisa Oana
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP16472679A priority Critical patent/JPS5687664A/en
Publication of JPS5687664A publication Critical patent/JPS5687664A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To make the thickness and quality of a film formed uniform by placing a mask having an opening near the surface of a substrate support stand to intercept sputtered particles flying to a part except a part just under a target. CONSTITUTION:In order to prevent the formation of a film of sputtered particles flying to a part except a part just under target 1, shutter 6 having opening 7 is placed near the surfaces of substrates 3. The width of shutter opening 7 is made equal to or smaller than that of target 1. Sputtering is carried out while allowing the substrates to cross opening 7. Thus, an electromechanical coupling constant, magnetization, etc. are improved which are dependent on the electric conductivity of a semiconductor thin film, a resistor thin film or the like and the crystal axis orientation of a piezoelectric body thin film, a magnetic body thin film or the like.
JP16472679A 1979-12-20 1979-12-20 Sputtering method Pending JPS5687664A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16472679A JPS5687664A (en) 1979-12-20 1979-12-20 Sputtering method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16472679A JPS5687664A (en) 1979-12-20 1979-12-20 Sputtering method

Publications (1)

Publication Number Publication Date
JPS5687664A true JPS5687664A (en) 1981-07-16

Family

ID=15798722

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16472679A Pending JPS5687664A (en) 1979-12-20 1979-12-20 Sputtering method

Country Status (1)

Country Link
JP (1) JPS5687664A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4416760A (en) * 1981-11-27 1983-11-22 Varian Associates, Inc. Apparatus for asymmetrically contouring the thickness of sputter coated layers
US4816127A (en) * 1984-11-15 1989-03-28 Xidex Corporation Method of producing thin-film storage disk

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4416760A (en) * 1981-11-27 1983-11-22 Varian Associates, Inc. Apparatus for asymmetrically contouring the thickness of sputter coated layers
US4816127A (en) * 1984-11-15 1989-03-28 Xidex Corporation Method of producing thin-film storage disk

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