JPS6473075A - Film forming device by ion beam sputtering - Google Patents

Film forming device by ion beam sputtering

Info

Publication number
JPS6473075A
JPS6473075A JP22840987A JP22840987A JPS6473075A JP S6473075 A JPS6473075 A JP S6473075A JP 22840987 A JP22840987 A JP 22840987A JP 22840987 A JP22840987 A JP 22840987A JP S6473075 A JPS6473075 A JP S6473075A
Authority
JP
Japan
Prior art keywords
ion beam
targets
substrate
film
composite film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22840987A
Other languages
Japanese (ja)
Inventor
Keiji Arimatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP22840987A priority Critical patent/JPS6473075A/en
Publication of JPS6473075A publication Critical patent/JPS6473075A/en
Pending legal-status Critical Current

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  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To form multi-layered film and composite film controlled to a high degree at a high speed by inclining the surfaces of plural targets at a specific angle and rotating the targets at the time of forming the multi-layered film or composite film consisting of multiple elements with a film forming device by ion beam sputtering. CONSTITUTION:A substrate 3 for vapor deposition is placed in a vacuum treatment chamber 8. While a target holder 1 imposed with the plural targets of different kinds is rotated below the substrate, an ion beam 6 from an ion source 6 is projected to the targets so that particles 7 of the target materials are deposited by evaporation on the surface of the substrate 3 and the multi-layered film or the composite film is formed thereon. The surfaces of the targets 2C are divided to the plural targets at the area rates corresponding to the components for forming the multi-layered film or the composite film and the surface thereof is inclined perpendicular to the ion beam 6 in the position where the ion beam 6 is projected, by which the intrusion of the material particles of the target holder 1 in the surface for vapor deposition of the substrate 3 and the consequent contamination thereof are prevented.
JP22840987A 1987-09-14 1987-09-14 Film forming device by ion beam sputtering Pending JPS6473075A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22840987A JPS6473075A (en) 1987-09-14 1987-09-14 Film forming device by ion beam sputtering

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22840987A JPS6473075A (en) 1987-09-14 1987-09-14 Film forming device by ion beam sputtering

Publications (1)

Publication Number Publication Date
JPS6473075A true JPS6473075A (en) 1989-03-17

Family

ID=16876017

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22840987A Pending JPS6473075A (en) 1987-09-14 1987-09-14 Film forming device by ion beam sputtering

Country Status (1)

Country Link
JP (1) JPS6473075A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5047806A (en) * 1990-06-14 1991-09-10 Xerox Corporation Meterless single component development
US6461484B2 (en) * 2000-09-13 2002-10-08 Anelva Corporation Sputtering device
JP2005240182A (en) * 2004-02-27 2005-09-08 Nanofilm Technologies Internatl Pte Ltd System and method for continuous arc vapor deposition by a plurality of usable targets
KR100537014B1 (en) * 2002-10-04 2006-01-20 권영욱 Coating System for Preventable EMI and Color Metal of Poly Carbonate of Plain Acrylic Glass using Ion Plating Method
US10112376B2 (en) * 2006-05-30 2018-10-30 Mitsubishi Heavy Industries Machine Tool, Co., Ltd. Device manufactured by room-temperature bonding, device manufacturing method, and room-temperature bonding apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59153882A (en) * 1983-02-22 1984-09-01 Nippon Telegr & Teleph Corp <Ntt> Vapor deposition method by sputtering
JPS6082665A (en) * 1983-10-07 1985-05-10 Hitachi Ltd Manufacture of multilayer thin film by ion-beam sputtering method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59153882A (en) * 1983-02-22 1984-09-01 Nippon Telegr & Teleph Corp <Ntt> Vapor deposition method by sputtering
JPS6082665A (en) * 1983-10-07 1985-05-10 Hitachi Ltd Manufacture of multilayer thin film by ion-beam sputtering method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5047806A (en) * 1990-06-14 1991-09-10 Xerox Corporation Meterless single component development
US6461484B2 (en) * 2000-09-13 2002-10-08 Anelva Corporation Sputtering device
KR100537014B1 (en) * 2002-10-04 2006-01-20 권영욱 Coating System for Preventable EMI and Color Metal of Poly Carbonate of Plain Acrylic Glass using Ion Plating Method
JP2005240182A (en) * 2004-02-27 2005-09-08 Nanofilm Technologies Internatl Pte Ltd System and method for continuous arc vapor deposition by a plurality of usable targets
US10112376B2 (en) * 2006-05-30 2018-10-30 Mitsubishi Heavy Industries Machine Tool, Co., Ltd. Device manufactured by room-temperature bonding, device manufacturing method, and room-temperature bonding apparatus

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