JPS6473075A - Film forming device by ion beam sputtering - Google Patents
Film forming device by ion beam sputteringInfo
- Publication number
- JPS6473075A JPS6473075A JP22840987A JP22840987A JPS6473075A JP S6473075 A JPS6473075 A JP S6473075A JP 22840987 A JP22840987 A JP 22840987A JP 22840987 A JP22840987 A JP 22840987A JP S6473075 A JPS6473075 A JP S6473075A
- Authority
- JP
- Japan
- Prior art keywords
- ion beam
- targets
- substrate
- film
- composite film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
PURPOSE:To form multi-layered film and composite film controlled to a high degree at a high speed by inclining the surfaces of plural targets at a specific angle and rotating the targets at the time of forming the multi-layered film or composite film consisting of multiple elements with a film forming device by ion beam sputtering. CONSTITUTION:A substrate 3 for vapor deposition is placed in a vacuum treatment chamber 8. While a target holder 1 imposed with the plural targets of different kinds is rotated below the substrate, an ion beam 6 from an ion source 6 is projected to the targets so that particles 7 of the target materials are deposited by evaporation on the surface of the substrate 3 and the multi-layered film or the composite film is formed thereon. The surfaces of the targets 2C are divided to the plural targets at the area rates corresponding to the components for forming the multi-layered film or the composite film and the surface thereof is inclined perpendicular to the ion beam 6 in the position where the ion beam 6 is projected, by which the intrusion of the material particles of the target holder 1 in the surface for vapor deposition of the substrate 3 and the consequent contamination thereof are prevented.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22840987A JPS6473075A (en) | 1987-09-14 | 1987-09-14 | Film forming device by ion beam sputtering |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22840987A JPS6473075A (en) | 1987-09-14 | 1987-09-14 | Film forming device by ion beam sputtering |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6473075A true JPS6473075A (en) | 1989-03-17 |
Family
ID=16876017
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22840987A Pending JPS6473075A (en) | 1987-09-14 | 1987-09-14 | Film forming device by ion beam sputtering |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6473075A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5047806A (en) * | 1990-06-14 | 1991-09-10 | Xerox Corporation | Meterless single component development |
US6461484B2 (en) * | 2000-09-13 | 2002-10-08 | Anelva Corporation | Sputtering device |
JP2005240182A (en) * | 2004-02-27 | 2005-09-08 | Nanofilm Technologies Internatl Pte Ltd | System and method for continuous arc vapor deposition by a plurality of usable targets |
KR100537014B1 (en) * | 2002-10-04 | 2006-01-20 | 권영욱 | Coating System for Preventable EMI and Color Metal of Poly Carbonate of Plain Acrylic Glass using Ion Plating Method |
US10112376B2 (en) * | 2006-05-30 | 2018-10-30 | Mitsubishi Heavy Industries Machine Tool, Co., Ltd. | Device manufactured by room-temperature bonding, device manufacturing method, and room-temperature bonding apparatus |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59153882A (en) * | 1983-02-22 | 1984-09-01 | Nippon Telegr & Teleph Corp <Ntt> | Vapor deposition method by sputtering |
JPS6082665A (en) * | 1983-10-07 | 1985-05-10 | Hitachi Ltd | Manufacture of multilayer thin film by ion-beam sputtering method |
-
1987
- 1987-09-14 JP JP22840987A patent/JPS6473075A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59153882A (en) * | 1983-02-22 | 1984-09-01 | Nippon Telegr & Teleph Corp <Ntt> | Vapor deposition method by sputtering |
JPS6082665A (en) * | 1983-10-07 | 1985-05-10 | Hitachi Ltd | Manufacture of multilayer thin film by ion-beam sputtering method |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5047806A (en) * | 1990-06-14 | 1991-09-10 | Xerox Corporation | Meterless single component development |
US6461484B2 (en) * | 2000-09-13 | 2002-10-08 | Anelva Corporation | Sputtering device |
KR100537014B1 (en) * | 2002-10-04 | 2006-01-20 | 권영욱 | Coating System for Preventable EMI and Color Metal of Poly Carbonate of Plain Acrylic Glass using Ion Plating Method |
JP2005240182A (en) * | 2004-02-27 | 2005-09-08 | Nanofilm Technologies Internatl Pte Ltd | System and method for continuous arc vapor deposition by a plurality of usable targets |
US10112376B2 (en) * | 2006-05-30 | 2018-10-30 | Mitsubishi Heavy Industries Machine Tool, Co., Ltd. | Device manufactured by room-temperature bonding, device manufacturing method, and room-temperature bonding apparatus |
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