JPS6447858A - Vapor deposition method with laser - Google Patents
Vapor deposition method with laserInfo
- Publication number
- JPS6447858A JPS6447858A JP62201946A JP20194687A JPS6447858A JP S6447858 A JPS6447858 A JP S6447858A JP 62201946 A JP62201946 A JP 62201946A JP 20194687 A JP20194687 A JP 20194687A JP S6447858 A JPS6447858 A JP S6447858A
- Authority
- JP
- Japan
- Prior art keywords
- source
- evaporating
- sources
- divided
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Physical Vapour Deposition (AREA)
Abstract
PURPOSE:To form a film having a desired compsn. and a desired thickness by combining plural evaporating sources in a column shape to form an evaporating source and by projecting laser beams on the source while rotating the source at a prescribed peripheral speed. CONSTITUTION:An evaporating source 2 is divided into every desired components or every group of plural desired components and the divided evaporating sources 2a, 2b, 2c are combined in a direction parallel to their axes to form an integrated evaporating source 2 in a column shape. The source 2 is rotated on its axis at a prescribed peripheral speed. Laser beams from a laser beam generating source are reflected by a mirror 7 and projected on the rotating source 2. The surfaces of the sources 2a-2c are separately evaporated and fine particle deposit together on the surface of a substrate 3. Thus, a film of a ceramic superconductive material, carbonitride, etc., can be effectively formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62201946A JPS6447858A (en) | 1987-08-14 | 1987-08-14 | Vapor deposition method with laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62201946A JPS6447858A (en) | 1987-08-14 | 1987-08-14 | Vapor deposition method with laser |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6447858A true JPS6447858A (en) | 1989-02-22 |
Family
ID=16449395
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62201946A Pending JPS6447858A (en) | 1987-08-14 | 1987-08-14 | Vapor deposition method with laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6447858A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5096847A (en) * | 1989-12-02 | 1992-03-17 | Samsung Electronics Co., Ltd. | Method making an ultra high density dram cell with stacked capacitor |
US5162253A (en) * | 1991-04-05 | 1992-11-10 | Nec Corporation | Method of producing capacitive element integrated circuit |
-
1987
- 1987-08-14 JP JP62201946A patent/JPS6447858A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5096847A (en) * | 1989-12-02 | 1992-03-17 | Samsung Electronics Co., Ltd. | Method making an ultra high density dram cell with stacked capacitor |
US5162253A (en) * | 1991-04-05 | 1992-11-10 | Nec Corporation | Method of producing capacitive element integrated circuit |
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