JPS5210868A - Electron radiation type vapor source - Google Patents
Electron radiation type vapor sourceInfo
- Publication number
- JPS5210868A JPS5210868A JP8697375A JP8697375A JPS5210868A JP S5210868 A JPS5210868 A JP S5210868A JP 8697375 A JP8697375 A JP 8697375A JP 8697375 A JP8697375 A JP 8697375A JP S5210868 A JPS5210868 A JP S5210868A
- Authority
- JP
- Japan
- Prior art keywords
- vapor source
- radiation type
- electron radiation
- type vapor
- vapor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/221—Ion beam deposition
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
PURPOSE:A vapor source which achieves improvement in the adhesion and crystallinity of deposited films and control of crystal structure by the multiplied effects of vapor streams of evaporating materials and electron beams, and which can be used for welding of dissimilar substrates or a substrate to other material.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50086973A JPS585260B2 (en) | 1975-07-15 | 1975-07-15 | Denshihoushi Yagatajyouhatsugen |
GB4345975A GB1483966A (en) | 1974-10-23 | 1975-10-22 | Vapourized-metal cluster ion source and ionized-cluster beam deposition |
US05/625,041 US4152478A (en) | 1974-10-23 | 1975-10-23 | Ionized-cluster deposited on a substrate and method of depositing ionized cluster on a substrate |
DE2547552A DE2547552B2 (en) | 1974-10-23 | 1975-10-23 | Layer vapor deposition process and equipment |
US06/011,917 US4217855A (en) | 1974-10-23 | 1979-02-13 | Vaporized-metal cluster ion source and ionized-cluster beam deposition device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50086973A JPS585260B2 (en) | 1975-07-15 | 1975-07-15 | Denshihoushi Yagatajyouhatsugen |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5210868A true JPS5210868A (en) | 1977-01-27 |
JPS585260B2 JPS585260B2 (en) | 1983-01-29 |
Family
ID=13901807
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50086973A Expired JPS585260B2 (en) | 1974-10-23 | 1975-07-15 | Denshihoushi Yagatajyouhatsugen |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS585260B2 (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4933098A (en) * | 1972-07-29 | 1974-03-26 |
-
1975
- 1975-07-15 JP JP50086973A patent/JPS585260B2/en not_active Expired
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4933098A (en) * | 1972-07-29 | 1974-03-26 |
Also Published As
Publication number | Publication date |
---|---|
JPS585260B2 (en) | 1983-01-29 |
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