JPS5675572A - Sputtering device - Google Patents

Sputtering device

Info

Publication number
JPS5675572A
JPS5675572A JP15180379A JP15180379A JPS5675572A JP S5675572 A JPS5675572 A JP S5675572A JP 15180379 A JP15180379 A JP 15180379A JP 15180379 A JP15180379 A JP 15180379A JP S5675572 A JPS5675572 A JP S5675572A
Authority
JP
Japan
Prior art keywords
shielding plate
target
anode
opposing
protection cover
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15180379A
Other languages
Japanese (ja)
Inventor
Ichiro Fujita
Toshihiko Ono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15180379A priority Critical patent/JPS5675572A/en
Publication of JPS5675572A publication Critical patent/JPS5675572A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE:To prevent sputtered atoms from sticking onto a shielding plate in a sputtering device opposedly provided with an anode and a target in a vacuum treating chamber and providing a shielding plate therebetween, by covering the surface of the shielding plate opposing to the target plate by means of a protection cover. CONSTITUTION:An anode 2 and a target 1 are opposedly provided in a vacuum treating chamber, and a shielding plate 4 is provided in proximity to the surface of the target 1 opposing to the anode 2. A caplike protection cover 6 is put on the top surface of this shielding plate 4, that is, the surface opposing to the target 1. Thus, the atoms sputtered from the target 1 by receiving ion impact stick on the protection cover 6 and do not stick to the shielding plate 4. Thereby, the removal of the materials stuck to the shielding plate 4 is eliminated.
JP15180379A 1979-11-22 1979-11-22 Sputtering device Pending JPS5675572A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15180379A JPS5675572A (en) 1979-11-22 1979-11-22 Sputtering device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15180379A JPS5675572A (en) 1979-11-22 1979-11-22 Sputtering device

Publications (1)

Publication Number Publication Date
JPS5675572A true JPS5675572A (en) 1981-06-22

Family

ID=15526635

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15180379A Pending JPS5675572A (en) 1979-11-22 1979-11-22 Sputtering device

Country Status (1)

Country Link
JP (1) JPS5675572A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61276968A (en) * 1985-05-31 1986-12-06 Hitachi Koki Co Ltd Prevention mechanism for flying of secondary electron into high-voltage anodic terminal for ion beam sputtering device
JPH0330258U (en) * 1989-07-26 1991-03-25

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50121135A (en) * 1974-03-11 1975-09-22

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50121135A (en) * 1974-03-11 1975-09-22

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61276968A (en) * 1985-05-31 1986-12-06 Hitachi Koki Co Ltd Prevention mechanism for flying of secondary electron into high-voltage anodic terminal for ion beam sputtering device
JPH0576543B2 (en) * 1985-05-31 1993-10-22 Hitachi Koki Kk
JPH0330258U (en) * 1989-07-26 1991-03-25

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