JPS61276968A - Prevention mechanism for flying of secondary electron into high-voltage anodic terminal for ion beam sputtering device - Google Patents
Prevention mechanism for flying of secondary electron into high-voltage anodic terminal for ion beam sputtering deviceInfo
- Publication number
- JPS61276968A JPS61276968A JP11917185A JP11917185A JPS61276968A JP S61276968 A JPS61276968 A JP S61276968A JP 11917185 A JP11917185 A JP 11917185A JP 11917185 A JP11917185 A JP 11917185A JP S61276968 A JPS61276968 A JP S61276968A
- Authority
- JP
- Japan
- Prior art keywords
- flying
- secondary electron
- voltage anodic
- ion beam
- anodic terminal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は陽極高電圧端子部を陰極接地したカバで遮蔽し
て二次電子の飛び込みを防止した、イオンビームスパッ
タ装置の陽極高電圧端子への二次電子飛び込み防止機構
に関するものである。[Detailed Description of the Invention] [Field of Application of the Invention] The present invention is directed to an anode high voltage terminal of an ion beam sputtering apparatus in which the anode high voltage terminal is shielded with a cathode grounded cover to prevent secondary electrons from entering. This relates to a secondary electron injection prevention mechanism.
従来は第１図に示すようにスパッタ室１を７×１０−８
Ｔｏｒｒ付近まで排気しながら、Ａｒガス２を流し込み
約１桁圧力の高い６ Ｘ １０” Ｔｏｒｒの圧力に保
持します。イオン銃３の中心部陽極４にプラスの高電圧
を印加し、両端の電極５を接地してマイナスに接続する
と局部で放電を起こして電子６が発生し、その電子が行
ったり、来たりしているうちにＡｒガスに衝突し、Ａｒ
ガスをイオン化する。Conventionally, the sputtering chamber 1 was 7 x 10-8 as shown in Figure 1.
While evacuating to around Torr, Ar gas 2 is poured in and maintained at a pressure of 6 x 10” Torr, which is about an order of magnitude higher.A positive high voltage is applied to the central anode 4 of the ion gun 3, and the electrodes at both ends are When 5 is grounded and connected to the negative terminal, a local discharge occurs and electrons 6 are generated.While the electrons are going back and forth, they collide with Ar gas, causing Ar
Ionize the gas.
このイオン銃で発生した電子の一部はスパッタ室に浮遊
し、その浮遊二次電子が第２図に示すようにプラスの陽
極高電圧端子７に飛び込み加熱する。Some of the electrons generated by this ion gun float in the sputtering chamber, and the floating secondary electrons jump into the positive anode high voltage terminal 7 and heat it, as shown in FIG.
そうするとパツキン８や０″リング９が熱変形して劣化
した。才た加熱されるとガス放出が起こって圧力が高く
力って放電したりしてスパッタリングが不安定とかった
。As a result, the packing 8 and the 0" ring 9 were thermally deformed and deteriorated. When heated too much, gas was released, the pressure was high, and a forceful discharge occurred, making sputtering unstable.
本発明の目的は、上記した従来技術の欠点を力＜シ、陽
極の高電圧端子に浮遊二次電子の飛び込みをなくして、
真空パツキンの劣化と安定なスパッタができるようにす
ることである。The purpose of the present invention is to overcome the above-mentioned drawbacks of the prior art, and to eliminate floating secondary electrons from entering the high voltage terminal of the anode.
The purpose is to prevent deterioration of the vacuum packing and to ensure stable sputtering.
本発明は、浮遊二次電子を飛び込む陽極の高電圧端子部
を陰極接地Ｌ−たカバで遮蔽して、加熱を防止すること
である。そしてシールパツキンの劣化を防止し、かつ放
電発生をなくして安定々スパッタができるように工夫し
たものである。The present invention is to prevent heating by shielding the high-voltage terminal portion of the anode into which floating secondary electrons can enter with a cathode-grounded cover. It is designed to prevent deterioration of the seal packing and to eliminate the occurrence of electrical discharge so that sputtering can be performed stably.
本発明は第３図に示すようにイオン銃ＩＫ供給する陽極
高電圧導入端子２を陰極接地した遮蔽カバ３でシールド
して浮遊二次電子の飛び込みを防止した。そしてＯ°リ
ング４やパツキン５の熱劣化を防止した。In the present invention, as shown in FIG. 3, the anode high voltage introduction terminal 2 for supplying the ion gun IK is shielded with a cathode-grounded shielding cover 3 to prevent floating secondary electrons from entering. In addition, thermal deterioration of the O° ring 4 and seal 5 was prevented.
本発明によれば陽極高電圧端子部を接地電位のカバで遮
蔽したので、
１）浮遊二次子の飛び込みを防止できる。そのため温度
上昇がないので真空シールのパツキンやＯａミリング劣
化がない。According to the present invention, since the anode high voltage terminal portion is shielded with a cover having a ground potential, 1) floating secondary particles can be prevented from flying in; Therefore, there is no temperature rise, so there is no deterioration of vacuum seal packing or Oa milling.
２）温度上昇がないため、ガス放出によって真空不良が
起きない。そのため安定したスパッタリングができる。2) Since there is no temperature rise, vacuum defects do not occur due to gas release. Therefore, stable sputtering can be performed.
第１図は従来の縦断面図である。第２図は第１図の平面
図である。第３図は本発明の平面図である。
１はイオン銃、２は陽極高電圧導入端子、３は遮蔽カバ
、４はＯリング、５ｆｄニパノキンである。FIG. 1 is a conventional vertical sectional view. FIG. 2 is a plan view of FIG. 1. FIG. 3 is a plan view of the present invention. 1 is an ion gun, 2 is an anode high voltage introduction terminal, 3 is a shielding cover, 4 is an O-ring, and 5fd nipanoquin.
Claims (1)
地したカバで、遮蔽して浮遊二次電子の飛び込みを防止
した、イオンビームスパッタ装置の陽極高電圧端子への
二次電子飛び込み防止機構。A mechanism to prevent secondary electrons from jumping into the anode high voltage terminal of an ion beam sputtering device, which prevents floating secondary electrons from jumping in by shielding the anode high voltage terminal of the ion beam sputtering device with a cathode-grounded cover.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11917185A JPS61276968A (en) | 1985-05-31 | 1985-05-31 | Prevention mechanism for flying of secondary electron into high-voltage anodic terminal for ion beam sputtering device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11917185A JPS61276968A (en) | 1985-05-31 | 1985-05-31 | Prevention mechanism for flying of secondary electron into high-voltage anodic terminal for ion beam sputtering device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61276968A true JPS61276968A (en) | 1986-12-06 |
| JPH0576543B2 JPH0576543B2 (en) | 1993-10-22 |
Family
ID=14754667
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11917185A Granted JPS61276968A (en) | 1985-05-31 | 1985-05-31 | Prevention mechanism for flying of secondary electron into high-voltage anodic terminal for ion beam sputtering device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61276968A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5675572A (en) * | 1979-11-22 | 1981-06-22 | Fujitsu Ltd | Sputtering device |
-
1985
- 1985-05-31 JP JP11917185A patent/JPS61276968A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5675572A (en) * | 1979-11-22 | 1981-06-22 | Fujitsu Ltd | Sputtering device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0576543B2 (en) | 1993-10-22 |
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